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US20090289355 SEMICONDUCTOR MANUFACTURING APPARATUS AND SEMICONDUCTOR DEVICE  
A semiconductor manufacturing apparatus which performs a rapid heat treatment in which metallic thin films 11 and 12 to be metallic electrodes are formed on a top surface and a bottom surface...
US20090289264 Silicon carbide semiconductor device and method of manufacturing the same  
An SiC semiconductor device includes a substrate, a drift layer disposed on a first surface of the substrate, a base region disposed above the drift layer, a source region disposed above the base...
US20090289263 System and Method for Emitter Layer Shaping  
Embodiments of an LED disclosed has an emitter layer shaped to a controlled depth or height relative to a substrate of the LED to maximize the light output of the LED and to achieve a desired...
US20090289262 JUNCTION BARRIER SCHOTTKY DIODES WITH CURRENT SURGE CAPABILITY  
An electronic device includes a silicon carbide drift region having a first conductivity type, a Schottky contact on the drift region, and a plurality of junction barrier Schottky (JBS) regions at...
US20090283776 WIDE BAND GAP SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING THE SAME  
A wide band gap semiconductor device is disclosed. A first trench in a gate electrode part and a second trench in a source electrode part (Schottky diode part) are disposed so that the first and...
US20090283761 METHOD OF CUTTING SINGLE CRYSTALS  
A method of dividing single crystals, particularly of plates of parts thereof, is proposed, which can comprise: pre-adjusting the crystallographic cleavage plane ( 2′ ) relative to the cleavage...
US20090278137 SEMICONDUCTOR DEVICES WITH NON-PUNCH-THROUGH SEMICONDUCTOR CHANNELS HAVING ENHANCED CONDUCTION AND METHODS OF MAKING  
Semiconductor devices are described wherein current flow in the device is confined between the rectifying junctions (e.g., p-n junctions or metal-semiconductor junctions). The device provides...
US20090272984 Silicon Carbide on Diamond Substrates and Related Devices and Methods  
A high power, wide-bandgap device is disclosed that exhibits reduced junction temperature and higher power density during operation and improved reliability at a rated power density. The device...
US20090272983 Silicon carbide semiconductor device and method for manufacturing the same  
A silicon carbide semiconductor device includes: a semiconductor substrate having a silicon carbide substrate, a first semiconductor layer, a second semiconductor layer, and a third semiconductor...
US20090272982 TRENCH GATE TYPE SEMICONDUCTOR DEVICE AND METHOD OF PRODUCING THE SAME  
A method of producing a trench gate type MOSFET is provided in which each intersection trench is formed as a two-stage trench structure. A gate trench is backfilled with a mask material and the...
US20090272971 LIGHT EMITTING DEVICE HAVING A PLURALILTY OF LIGHT EMITTING CELLS AND PACKAGE MOUNTING THE SAME  
Disclosed is a light emitting device having a plurality of light emitting cells and a package having the same mounted thereon. The light emitting device includes a plurality of light emitting cells...
US20090267082 Semiconductor device and manufacturing method of the same  
A semiconductor device includes: a semiconductor element having a first surface and a second surface; a first electrode disposed on the first surface of the element; a second electrode disposed on...
US20090267081 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATION THEREOF  
A semiconductor device includes a substrate formed of a single crystal. a silicon carbide layer disposed on a surface of the single crystal substrate and an intermediate layer disposed on a surface...
US20090261351 Silicon Carbide Devices Having Smooth Channels  
Power devices are provided including a p-type conductivity well region and a buried p + conductivity region in the p-type conductivity well region. An n + conductivity region is provided on the...
US20090261350 Silicon carbide semiconductor device including deep layer  
A silicon carbide semiconductor device includes a substrate, a drift layer located on a first surface of the substrate, a base region located on the drift layer, a source region located on the base...
US20090261349 SEMICONDUCTOR DEVICE WITH STRAINED CHANNEL AND METHOD OF FABRICATING THE SAME  
A semiconductor device includes: a gate pattern over a substrate; recess patterns provided in the substrate at both sides of the gate pattern, each having a side surface extending below the gate...
US20090261348 SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD  
In a semiconductor device using a SiC substrate, a Junction Termination Edge (JTE) layer is hardly affected by fixed charge so that a stable dielectric strength is obtained. A semiconductor device...
US20090261347 DIAMOND SEMICONDUCTOR ELEMENT AND PROCESS FOR PRODUCING THE SAME  
In a conventional diamond semiconductor element, because of high density of crystal defects, it is impossible to reflect the natural physical properties peculiar to a diamond, such as high thermal...
US20090260680 Photovoltaic Devices and Associated Methods  
Materials, devices, and methods for enhancing performance of electronic devices such as solar cells, thermoelectric conversion devices and other electronic devices are provided. In one aspect, for...
US20090256162 Method for Producing Semi-Insulating Resistivity in High Purity Silicon Carbide Crystals  
A method is disclosed for producing high quality semi-insulating silicon carbide crystals in the absence of relevant amounts of deep level trapping elements. The invention includes the steps of...
US20090256161 POWER CONVERSION APPARATUS  
In the case where a chip is made of wide band gap semiconductor, a power conversion apparatus is obtained in which a component having a low heat resistant temperature is prevented from receiving...
US20090256160 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME  
A method for manufacturing a semiconductor device is provided. A gate structure is formed on a substrate. A first dopant implantation and a first strain atom implantation are performed. Thereafter,...
US20090251960 HIGH TEMPERATURE MEMORY DEVICE  
Disclosed herein are various nonvolatile integrated device embodiments suitable for use at high temperatures. In some embodiments, a high temperature nonvolatile integrated device comprises a...
US20090250705 SILICON CARBIDE SEMICONDUCTOR DEVICE COMPRISING SILICON CARBIDE LAYER AND METHOD OF MANUFACTURING THE SAME  
A p base ohmic contact of a silicon carbide semiconductor device consists of a p++ layer formed by high-concentration ion implantation and a metal electrode. Since the high-concentration ion...
US20090242918 High Efficiency Group III Nitride LED with Lenticular Surface  
A light emitting diode is disclosed that includes a conductive substrate, a bonding metal on the conductive substrate and a barrier metal layer on the bonding metal. A mirror layer is encapsulated...
US20090242901 SiC MOSFETS AND SELF-ALIGNED FABRICATION METHODS THEREOF  
The present invention provides a method of fabricating a metal oxide semiconductor field effect transistor. The method includes the steps of forming a source region on a silicon carbide layer and...
US20090242900 MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME  
The invention discloses a memory device and method thereof. The memory device comprises a substrate, an insulator layer, a first conducting layer, a CaCu 3 Ti 4 O 12 resistor layer and a second...
US20090242899 Epitaxial Growth on Low Degree Off-Axis SiC Substrates and Semiconductor Devices Made Thereby  
A method of epitaxially growing a SiC layer on a single crystal SiC substrate is described. The method includes heating a single-crystal SiC substrate to a first temperature of at least 1400° C....
US20090236612 SILICON CARBIDE MOS SEMICONDUCTOR DEVICE  
A silicon carbide MOS semiconductor device is disclosed which suppresses degradation of efficiency percentage yield with respect to a breakdown voltage even when a surface region with a high...
US20090236611 SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MAKING THE SAME  
A silicon carbide semiconductor device provided as a semiconductor chip includes a substrate, a drift layer on the substrate, an insulation film on the drift layer, a semiconductor element formed...
US20090236610 Method for Manufacturing a Semiconductor Structure, and a Corresponding Semiconductor Structure  
A method for manufacturing a semiconductor structure is provided which includes the following operations: supplying a crystalline semiconductor substrate, providing a porous region adjacent to a...
US20090236609 Method and Apparatus for Producing Graphene Oxide Layers on an Insulating Substrate  
In a method of making a functionalized graphitic structure, a portion of a multi-layered graphene surface extending from a silicon carbide substrate is exposed to an acidic environment so as to...
US20090236608 Method for Producing Graphitic Patterns on Silicon Carbide  
In a method of making a vertical graphitic path on a silicon carbide crystal having a horizontal surface, a portion of the silicon carbide crystal is removed from the horizontal surface so as to...
US20090230406 HOMOEPITAXIAL GROWTH OF SIC ON LOW OFF-AXIS SIC WAFERS  
A wafer including a SiC substrate having a surface that is inclined relative to a (0001) basal plane at an angle higher than 0.1 degree but less than 1 degree, a SiC homoepitaxial device layer, and...
US20090230405 Diode having Schottky junction and PN junction and method for manufacturing the same  
A manufacturing method of a diode includes: forming a P type semiconductor film on a N type semiconductor layer with a crystal growth method; forming a first metallic film on the P type...
US20090230404 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR  
MOSFET ( 30 ) is provided with SiC film ( 11 ). SiC film ( 11 ) has a facet on its surface, and the length of one period of the facet is 100 nm or more, and the facet is used as channel ( 16 )....
US20090225578 SEMICONDUCTOR DEVICE AND ELECTRIC APPARATUS  
The present invention provides a semiconductor device and an electric apparatus each of which can realize both high-speed switching operation and energy loss reduction and excels in resistance to...
US20090224263 Generating Stress in a Field Effect Transistor  
A structure for generating stress in a field effect transistor is described. Combinations of materials are described that when juxtaposed provide one of tensile or compressive stress to a channel...
US20090218579 SUBSTRATE HEATING APPARATUS, SEMICONDUCTOR DEVICE MANUFACTURING METHOD, AND SEMICONDUCTOR DEVICE  
In a substrate heating apparatus, thermoelectrons generated by a filament ( 132 ) in a vacuum heating vessel ( 103 ) are accelerated to collide against a conductive heater ( 131 ) which forms one...
US20090212301 Double Guard Ring Edge Termination for Silicon Carbide Devices and Methods of Fabricating Silicon Carbide Devices Incorporating Same  
Edge termination structures for semiconductor devices are provided including a plurality of spaced apart concentric floating guard rings in a semiconductor layer that at least partially surround a...
US20090206347 Semiconductor Device  
A unipolar semiconductor device having a drift layer ( 3 ) doped according to a first conductivity type forming a conducting path and regions ( 7, 8 ) doped according to a second conductivity type...
US20090200559 Silicon carbide semiconductor device including deep layer  
A silicon carbide semiconductor device includes a substrate, a drift layer located on a first surface of the substrate, a base region located on the drift layer, a source region located on the base...
US20090194773 GALLIUM NITRIDE MATERIAL DEVICES INCLUDING DIAMOND REGIONS AND METHODS ASSOCIATED WITH THE SAME  
Gallium nitride material structures are provided, as well as devices and methods associated with such structures. The structures include a diamond region which may facilitate conduction and removal...
US20090194772 Method For Fabricating Silicon Carbide Vertical MOSFET Devices  
A method of forming a vertical MOSFET device includes forming a first trench within a semiconductor layer of a first polarity, the first trench generally defining a well region of a second polarity...
US20090184328 ELECTRICAL SWITCHING DEVICE AND METHOD OF EMBEDDING CATALYTIC MATERIAL IN A DIAMOND SUBSTRATE  
An electrical switching device ( 30 ) is disclosed. The device comprises a diamond substrate ( 24 ), a cathode ( 34 ) in contact with the substrate and having electrically conductive emitters ( 32...
US20090184327 METHOD FOR PRODUCING SILICON CARBIDE SINGLE CRYSTAL  
A method for the production of an SiC single crystal includes the steps of growing a first SiC single crystal in a first direction of growth on a first seed crystal formed of an SiC single crystal,...
US20090173951 COMPOUND SEMICONDUCTOR DEVICE USING SiC SUBSTRATE AND ITS MANUFACTURE  
A compound semiconductor device includes: a conductive SiC substrate; an AlN buffer layer formed on said conductive SiC substrate and containing Cl; a compound semiconductor buffer layer formed on...
US20090173950 CONTROLLING DIAMOND FILM SURFACES AND LAYERING  
A method comprising: providing at least one first diamond film comprising polycrystalline diamond, e.g., nanocrystalline or ultrananocrystalline diamond, disposed on a substrate, wherein the first...
US20090173949 SILICON CARBIDE MOS FIELD EFFECT TRANSISTOR WITH BUILT-IN SCHOTTKY DIODE AND METHOD FOR MANUFACTURING SUCH TRANSISTOR  
This invention has a cell incorporating a built-in Schottky diode region disposed in at least part of an elementary cell that constitutes an SiC vertical MOSFET provided in a low-density p-type...
US20090159898 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THEREOF  
A semiconductor device is provided in which the contact resistance of the interface between an electrode and the semiconductor substrate is reduced. The semiconductor device includes a 4H polytype...
Matches 1 - 50 out of 164 1 2 3 4 >