Sign up

AcclaimIP-ad

Match Document Document Title
US20100072484 HETEROEPITAXIAL GALLIUM NITRIDE-BASED DEVICE FORMED ON AN OFF-CUT SUBSTRATE  
Embodiments include but are not limited to apparatuses and systems including a heteroepitaxial gallium nitride-based device formed on an off-cut substrate, and methods for making the same. Other...
US20110073859 Reduced Stiction MEMS Device with Exposed Silicon Carbide  
A MEMS device has a first member that is movable relative to a second member. At least one of the first member and the second member has exposed silicon carbide with a water contact angle of...
US20090261351 Silicon Carbide Devices Having Smooth Channels  
Power devices are provided including a p-type conductivity well region and a buried p+ conductivity region in the p-type conductivity well region. An n+ conductivity region is provided on the...
US20090090918 TRANSPARENT NANOCRYSTALLINE DIAMOND CONTACTS TO WIDE BANDGAP SEMICONDUCTOR DEVICES  
A heterojunction between thin films of NCD and 4H—SiC was developed. Undoped and B-doped NCDs were deposited on both n− and p− SiC epilayers. I-V measurements on p+ NCD/n− SiC indicated Schottk...
US20070272929 Diamond N-Type Semiconductor, Method of Manufacturing the Same, Semiconductor Device, and Electron Emitting Device  
The present invention relates to a diamond n-type semiconductor in which the amount of change in carrier concentration is fully reduced in a wide temperature range. The diamond n-type semiconductor...
US20110147765 DUMMY STRUCTURE FOR ISOLATING DEVICES IN INTEGRATED CIRCUITS  
The present disclosure provides an integrated circuit. The integrated circuit includes a first operational device having a first transistor of a first composition; a second operational device...
US20120146054 MOSFET WITH SOURCE SIDE ONLY STRESS  
An integrated circuit contains a transistor with a stress enhancement region on the source side only. In a DeMOS transistor, forming the stress enhancement region on the source side only and not...
US20060001029 Diamond sensor  
A diamond element is mounted on an insulating base material having a thickness of not more than 3 mm provided with one pair of metal interconnects. In the diamond element, an insulating diamond...
US20130277687 HIGH VOLTAGE FIELD EFFECT TRANSITOR FINGER TERMINATIONS  
A field effect transistor having at least one structure configured to redistribute and/or reduce an electric field from gate finger ends is disclosed. Embodiments of the field effect transistor...
US20060118792 Edge termination structures for silicon carbide devices and methods of fabricating silicon carbide devices incorporating same  
An edge termination structure for a silicon carbide semiconductor device includes a plurality of spaced apart concentric floating guard rings in a silicon carbide layer that at least partially...
US20050211970 Metal nano-objects, formed on semiconductor surfaces, and method for making said nano-objects  
Metallic nano-objects, formed on surfaces of semiconductors, and a process for manufacturing these nano-objects. The invention is applicable in nano-electronics and for example provides a means of...
US20070262322 Monocrystalline Silicon Carbide Ingot, Monocrystalline Silicon Carbide Wafer and Method of Manufacturing the Same  
Provided is a monocrystalline silicon carbide ingot containing a dopant element, wherein a maximum concentration of the dopant element is less than 5×1017 atoms/cm3 and the maximum concentration ...
US20090108266 Friction Control in Apparatus Having Wide Bandgap Semiconductors  
Apparatus comprising, in use, a wide bandgap semiconductor, a conductor which is moveable relative to the semiconductor and means for applying a potential across the junction between a conductor...
US20140138706 ELECTRONIC CIRCUIT, PRODUCTION METHOD THEREOF, AND ELECTRONIC COMPONENT  
An electronic circuit according to this invention includes a printed circuit board and an electronic component that is soldered onto the printed circuit board. The electronic component is a flat...
US20130270577 GRID-UMOSFET WITH ELECTRIC FIELD SHIELDING OF GATE OXIDE  
A trench metal oxide semiconductor field effect transistor or UMOSFET, includes a buried region that extends beneath the trench and beyond a corner of the trench. The buried region is tied to a...
US20130234165 METHOD FOR COATING MICROMECHANICAL PARTS WITH DUAL DIAMOND COATING  
Method for coating micromechanical components of a micromechanical system, in particular a watch movement, comprising: providing a substrate (4) component to be coated;providing said component with...
US20120097979 STRUCTURALLY ROBUST POWER SWITCHING ASSEMBLY  
A structurally robust power switching assembly, that has a first rigid structural unit, defining a first unit major surface that is patterned to define a plurality of mutually electrically...
US20080277670 SiC crystal and semiconductor device  
The present invention discloses a SiC crystal, comprising: acceptor impurities that are in a concentration greater than 5×1017 cm−3; donor impurities that are in a concentration less than 1×...
US20110024650 TERAHERTZ EMITTER WITH HIGH POWER AND TEMPERATURE OPERATION  
Terahertz emitting devices are disclosed. The terahertz emitting device comprises a wafer and a current source. The wafer includes silicon carbide and a dopant. In particular, the wafer may consist...
US20110297962 SCHOTTKY DIODE WITH DIAMOND ROD AND METHOD FOR MANUFACTURING THE SAME  
The present invention relates to a Schottky diode with a diamond rod, which comprises: a substrate with a gate layer formed thereon; a patterned insulating layer disposed on the gate layer, wherein...
US20120091470 Programmable Gate III-Nitride Power Transistor  
A III-nitride semiconductor device which includes a charged floating gate electrode.
US20080116464 Silicon-Rich Nickel-Silicide Ohmic Contacts for SIC Semiconductor Devices  
A method of producing an ohmic contact and a resulting ohmic contact structure are disclosed. The method includes the steps of forming a deposited film of nickel and silicon on a silicon carbide...
US20130092958 NORMALLY-OFF III-NITRIDE METAL-2DEG TUNNEL JUNCTION FIELD-EFFECT TRANSISTORS  
Structures, devices and methods are provided for creating heterojunction AlGaN/GaN metal two-dimensional electron gas (2DEG) tunnel-junction field-effect transistors (TJ-FET). In one aspect,...
US20070200115 High power silicon carbide (SiC) PiN diodes having low forward voltage drops  
Silicon Carbide (SiC) PiN Diodes are provided having a reverse blocking voltage (VR) from about 3.0 kV to about 10.0 kV and a forward voltage (VF) of less than about 4.3 V.
US20140055173 POWER MODULE  
A power module includes an IGBT; a MOSFET connected in parallel with the IGBT; a lead frame having a first frame portion on which the IGBT is mounted and a second frame portion on which the MOSFET...
US20130248884 III-Nitride Power Device  
A III-nitride semiconductor device which includes a barrier body between the gate electrode and the gate dielectric thereof.
US20130069057 WAFER WITH HIGH RUPTURE RESISTANCE  
A wafer with high rupture resistance includes a plurality of surfaces, wherein the surfaces include a largest surface having a largest area than others and a side surface connected to the fringe of...
US20130161651 LOW 1C SCREW DISLOCATION 3 INCH SILICON CARBIDE WAFER  
A high quality single crystal wafer of SiC is disclosed having a diameter of at least about 3 inches and a 1 c screw dislocation density from about 500 cm−2 to about 2000 cm−2.
US20080099769 PRODUCTION OF AN INTEGRATED CIRCUIT INCLUDING ELECTRICAL CONTACT ON SiC  
Production of an integrated circuit including an electrical contact on SiC is disclosed. One embodiment provides for production of an electrical contact on an SiC substrate, in which a conductive...
US20140183553 TRANSISTOR STRUCTURES HAVING REDUCED ELECTRICAL FIELD AT THE GATE OXIDE AND METHODS FOR MAKING SAME  
A transistor device having reduced electrical field at the gate oxide interface is disclosed. In one embodiment, the transistor device comprises a gate, a source, and a drain, wherein the gate is...
US20110101377 HIGH TEMPERATURE ION IMPLANTATION OF NITRIDE BASED HEMTS  
A method is disclosed for forming a high electron mobility transistor. The method includes the steps of implanting a Group III nitride layer at a defined position with ions that when implanted...
US20120211769 Sic single crystal wafer and process for production thereof  
A SiC single crystal wafer on which a good quality epitaxial film by suppressing defects derived from the wafer can be grown has an affected surface layer with a thickness of at most 50 nm and a...
US20090072241 GRID-UMOSFET WITH ELECTRIC FIELD SHIELDING OF GATE OXIDE  
A trench metal oxide semiconductor field effect transistor or UMOSFET, includes a buried region that extends beneath the trench and beyond a corner of the trench. The buried region is tied to a...
US20110114968 Integrated Nitride and Silicon Carbide-Based Devices  
A monolithic electronic device includes a first nitride epitaxial structure including a plurality of nitride epitaxial layers. The plurality of nitride epitaxial layers include at least one common...
US20100059762 HEAT REMOVAL FACILITATED WITH DIAMOND-LIKE CARBON LAYER IN SOI STRUCTURES  
Described are Silicon-on-Insulator devices containing a diamond-like carbon layer, methods of making the Silicon-on-Insulator devices, and methods of using the Silicon-on-Insulator devices.
US20100187544 FABRICATING A GALLIUM NITRIDE LAYER WITH DIAMOND LAYERS  
In one aspect, a method includes fabricating a gallium nitride (GaN) layer with a first diamond layer having a first thermal conductivity and a second diamond layer having a second thermal...
US20130180576 Diamond-Like Carbon Electronic Devices and Methods of Manufacture  
Materials, devices, and methods for enhancing performance of electronic devices such as solar cells, fuels cells, LEDs, thermoelectric conversion devices, and other electronic devices are disclosed...
US20090194773 GALLIUM NITRIDE MATERIAL DEVICES INCLUDING DIAMOND REGIONS AND METHODS ASSOCIATED WITH THE SAME  
Gallium nitride material structures are provided, as well as devices and methods associated with such structures. The structures include a diamond region which may facilitate conduction and removal...
US20090272982 TRENCH GATE TYPE SEMICONDUCTOR DEVICE AND METHOD OF PRODUCING THE SAME  
A method of producing a trench gate type MOSFET is provided in which each intersection trench is formed as a two-stage trench structure. A gate trench is backfilled with a mask material and the...
US20110012130 High Breakdown Voltage Wide Band-Gap MOS-Gated Bipolar Junction Transistors with Avalanche Capability  
High power wide band-gap MOSFET-gated bipolar junction transistors (“MGT”) are provided that include a first wide band-gap bipolar junction transistor (“BJT”) having a first collector, a first e...
US20130146894 BIPOLAR JUNCTION TRANSISTOR STRUCTURE FOR REDUCED CURRENT CROWDING  
The present disclosure relates to a bipolar junction transistor (BJT) structure that significantly reduces current crowding while improving the current gain relative to conventional BJTs. The BJT...
US20140054609 LARGE HIGH-QUALITY EPITAXIAL WAFERS  
Large high-quality epitaxial wafers are disclosed. Embodiments of the invention provide silicon carbide epitaxial wafers with low basal plane dislocation (BPD) densities. In some embodiments, these...
US20120153298 EPITAXIAL GROWTH SYSTEM FOR FAST HEATING AND COOLING  
A system for crystal growth having rapid heating and cooling. A fluid-cooling jacket having a reflective shield contained therein is disposed around a heating cylinder in which crystal growth takes...
US20140167069 SYSTEMS AND METHODS FOR INTEGRATING BOOTSTRAP CIRCUIT ELEMENTS IN POWER TRANSISTORS AND OTHER DEVICES  
Embodiments relate to bootstrap circuits integrated with at least one other device, such as a power transistor or other semiconductor device. In embodiments, the bootstrap circuit can comprise a...
US20140175457 SIC-BASED TRENCH-TYPE SCHOTTKY DEVICE  
A SiC-based trench-type Schottky device is disclosed. The device includes: a SiC substrate having first and second surfaces; a first contact metal formed on the second surface and configured for...
US20120319132 SPLIT-GATE STRUCTURE IN TRENCH-BASED SILICON CARBIDE POWER DEVICE  
An integrated structure includes a plurality of split-gate trench MOSFETs. A plurality of trenches is formed within the silicon carbide substrate composition, each trench is lined with a...
US20120326162 PROCESS FOR FORMING REPAIR LAYER AND MOS TRANSISTOR HAVING REPAIR LAYER  
A repair layer forming process includes the following steps. Firstly, a substrate is provided, and a gate structure is formed on the substrate, wherein the gate structure at least includes a gate...
US20090289263 System and Method for Emitter Layer Shaping  
Embodiments of an LED disclosed has an emitter layer shaped to a controlled depth or height relative to a substrate of the LED to maximize the light output of the LED and to achieve a desired...
US20130264581 BIPOLAR JUNCTION TRANSISTOR WITH IMPROVED AVALANCHE CAPABILITY  
A bipolar junction transistor (BJT), which includes a collector layer, a base layer on the collector layer, an emitter layer on the base layer, and a recess region embedded in the collector layer,...
US20120298991 MULTILAYER SUBSTRATE HAVING GALLIUM NITRIDE LAYER AND METHOD FOR FORMING THE SAME  
The present invention provides a method for forming a multilayer substrate having a gallium nitride layer, wherein a mesh layer having a plurality of openings is formed on a substrate, and a buffer...