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US20120056199 Self-supporting CVD diamond film and method for producing a self-supporting CVD diamond film  
The invention relates to a self-supporting CVD diamond film comprising a plurality of diamond layers (8) lying one over the other, wherein a lower side of each diamond layer (8) is made of diamond...
US20150179654 EPITAXIAL SOURCE/DRAIN DIFFERENTIAL SPACERS  
A process of forming an integrated circuit containing a first transistor and a second transistor of the same polarity, by forming an epitaxial spacer layer over gates of both transistors,...
US20110121883 SYSTEM AND METHOD FOR PROVIDING SYMMETRIC, EFFICIENT BI-DIRECTIONAL POWER FLOW AND POWER CONDITIONING  
A system and method for providing symmetric, efficient bi-directional power flow and power conditioning for high-voltage applications. Embodiments include a first vertical-channel junction gate...
US20110101376 Optically-Initiated Silicon Carbide High Voltage Switch  
An improved photoconductive switch having a SIC or other wide band gap substrate material, such as GaAs and field-grading liners composed of preferably SiN formed on the substrate adjacent the...
US20130240905 Silicon Carbide Rectifier  
Silicon carbide PiN diodes are presented with reduced temperature coefficient crossover points by limited p type contact area to limit hole injection in the n type drift layer in order to provide...
US20090289262 JUNCTION BARRIER SCHOTTKY DIODES WITH CURRENT SURGE CAPABILITY  
An electronic device includes a silicon carbide drift region having a first conductivity type, a Schottky contact on the drift region, and a plurality of junction barrier Schottky (JBS) regions at...
US20090050897 Substrate, method of polishing the same, and polishing apparatus  
A polishing method and a polishing apparatus capable of polishing a surface of a substrate made of SiC or diamond extremely smoothly and efficiently without causing subsurface damage are provided....
US20140159053 SIC TRENCH GATE TRANSISTOR WITH SEGMENTED FIELD SHIELDING REGION AND METHOD OF FABRICATING THE SAME  
A SiC trench gate transistor with segmented field shielding region is provided. A drain region of a first conductivity type is located in a substrate. A first drift layer of the first conductivity...
US20110180811 WIRELESS CHIP AND ELECTRONIC DEVICE HAVING WIRELESS CHIP  
It is an object to provide a wireless chip which can increase a mechanical strength, and a wireless chip with a high durability. A wireless chip includes a transistor including a field-effect...
US20110241020 HIGH ELECTRON MOBILITY TRANSISTOR WITH RECESSED BARRIER LAYER  
Embodiments of a high electron mobility transistor with recessed barrier layer, and methods of forming the same, are disclosed. Other embodiments are also be described and claimed.
US20130153930 PHENYL GROUP-CONTAINING ORGANIC/INORGANIC HYBRID PREPOLYMER, HEAT RESISTANT ORGANIC/INORGANIC HYBRID MATERIAL, AND ELEMENT ENCAPSULATION STRUCTURE  
The object of the present invention is to provide an organic-inorganic hybrid material having heat resistance, and said object of the present invention can be attained by providing an...
US20140319538 FORCE DETECTION DEVICE, AND FORCE TRANSDUCER DEVICE  
A force detection device includes a diamond piezoresistor including a highly orientated diamond into which boron is introduced as an impurity. The absolute value of the piezoresistance coefficient...
US20100072484 HETEROEPITAXIAL GALLIUM NITRIDE-BASED DEVICE FORMED ON AN OFF-CUT SUBSTRATE  
Embodiments include but are not limited to apparatuses and systems including a heteroepitaxial gallium nitride-based device formed on an off-cut substrate, and methods for making the same. Other...
US20110073859 Reduced Stiction MEMS Device with Exposed Silicon Carbide  
A MEMS device has a first member that is movable relative to a second member. At least one of the first member and the second member has exposed silicon carbide with a water contact angle of...
US20090261351 Silicon Carbide Devices Having Smooth Channels  
Power devices are provided including a p-type conductivity well region and a buried p+ conductivity region in the p-type conductivity well region. An n+ conductivity region is provided on the...
US20150152326 SiC FLUORESCENT MATERIAL AND METHOD FOR MANUFACTURING THE SAME, AND LIGHT EMITTING ELEMENT  
Provided are a SiC fluorescent material with improved luminous efficiency, a method for manufacturing the same and a light emitting element. A SiC fluorescent material comprises a SiC crystal in...
US20090090918 TRANSPARENT NANOCRYSTALLINE DIAMOND CONTACTS TO WIDE BANDGAP SEMICONDUCTOR DEVICES  
A heterojunction between thin films of NCD and 4H—SiC was developed. Undoped and B-doped NCDs were deposited on both n− and p− SiC epilayers. I-V measurements on p+ NCD/n− SiC indicated Schottky...
US20070272929 Diamond N-Type Semiconductor, Method of Manufacturing the Same, Semiconductor Device, and Electron Emitting Device  
The present invention relates to a diamond n-type semiconductor in which the amount of change in carrier concentration is fully reduced in a wide temperature range. The diamond n-type...
US20150102362 SILICON CARBIDE POWER DEVICE EQUIPPED WITH TERMINATION STRUCTURE  
A silicon carbide power device equipped with termination structure comprises a silicon carbide substrate, a power element structure and a termination structure. The silicon carbide substrate...
US20140319545 METHOD FOR DEPOSITION OF SILICON CARBIDE AND SILICON CARBIDE EPITAXIAL WAFER  
A method for deposition of silicon carbide according to an embodiment includes preparing a wafer in a susceptor; introducing first etching gas into the susceptor; introducing second etching gas...
US20110147765 DUMMY STRUCTURE FOR ISOLATING DEVICES IN INTEGRATED CIRCUITS  
The present disclosure provides an integrated circuit. The integrated circuit includes a first operational device having a first transistor of a first composition; a second operational device...
US20120146054 MOSFET WITH SOURCE SIDE ONLY STRESS  
An integrated circuit contains a transistor with a stress enhancement region on the source side only. In a DeMOS transistor, forming the stress enhancement region on the source side only and not...
US20060001029 Diamond sensor  
A diamond element is mounted on an insulating base material having a thickness of not more than 3 mm provided with one pair of metal interconnects. In the diamond element, an insulating diamond...
US20130277687 HIGH VOLTAGE FIELD EFFECT TRANSITOR FINGER TERMINATIONS  
A field effect transistor having at least one structure configured to redistribute and/or reduce an electric field from gate finger ends is disclosed. Embodiments of the field effect transistor...
US20060118792 Edge termination structures for silicon carbide devices and methods of fabricating silicon carbide devices incorporating same  
An edge termination structure for a silicon carbide semiconductor device includes a plurality of spaced apart concentric floating guard rings in a silicon carbide layer that at least partially...
US20050211970 Metal nano-objects, formed on semiconductor surfaces, and method for making said nano-objects  
Metallic nano-objects, formed on surfaces of semiconductors, and a process for manufacturing these nano-objects. The invention is applicable in nano-electronics and for example provides a means of...
US20070262322 Monocrystalline Silicon Carbide Ingot, Monocrystalline Silicon Carbide Wafer and Method of Manufacturing the Same  
Provided is a monocrystalline silicon carbide ingot containing a dopant element, wherein a maximum concentration of the dopant element is less than 5×1017 atoms/cm3 and the maximum concentration...
US20090108266 Friction Control in Apparatus Having Wide Bandgap Semiconductors  
Apparatus comprising, in use, a wide bandgap semiconductor, a conductor which is moveable relative to the semiconductor and means for applying a potential across the junction between a conductor...
US20140138706 ELECTRONIC CIRCUIT, PRODUCTION METHOD THEREOF, AND ELECTRONIC COMPONENT  
An electronic circuit according to this invention includes a printed circuit board and an electronic component that is soldered onto the printed circuit board. The electronic component is a flat...
US20130270577 GRID-UMOSFET WITH ELECTRIC FIELD SHIELDING OF GATE OXIDE  
A trench metal oxide semiconductor field effect transistor or UMOSFET, includes a buried region that extends beneath the trench and beyond a corner of the trench. The buried region is tied to a...
US20130234165 METHOD FOR COATING MICROMECHANICAL PARTS WITH DUAL DIAMOND COATING  
Method for coating micromechanical components of a micromechanical system, in particular a watch movement, comprising: providing a substrate (4) component to be coated;providing said component...
US20140246681 HIGH CURRENT, LOW SWITCHING LOSS SiC POWER MODULE  
A power module includes a housing with an interior chamber and multiple switch modules mounted within the interior chamber of the housing. The switch modules are interconnected and configured to...
US20120097979 STRUCTURALLY ROBUST POWER SWITCHING ASSEMBLY  
A structurally robust power switching assembly, that has a first rigid structural unit, defining a first unit major surface that is patterned to define a plurality of mutually electrically...
US20080277670 SiC crystal and semiconductor device  
The present invention discloses a SiC crystal, comprising: acceptor impurities that are in a concentration greater than 5×1017 cm−3; donor impurities that are in a concentration less than 1×1019...
US20110024650 TERAHERTZ EMITTER WITH HIGH POWER AND TEMPERATURE OPERATION  
Terahertz emitting devices are disclosed. The terahertz emitting device comprises a wafer and a current source. The wafer includes silicon carbide and a dopant. In particular, the wafer may...
US20110297962 SCHOTTKY DIODE WITH DIAMOND ROD AND METHOD FOR MANUFACTURING THE SAME  
The present invention relates to a Schottky diode with a diamond rod, which comprises: a substrate with a gate layer formed thereon; a patterned insulating layer disposed on the gate layer,...
US20120091470 Programmable Gate III-Nitride Power Transistor  
A III-nitride semiconductor device which includes a charged floating gate electrode.
US20080116464 Silicon-Rich Nickel-Silicide Ohmic Contacts for SIC Semiconductor Devices  
A method of producing an ohmic contact and a resulting ohmic contact structure are disclosed. The method includes the steps of forming a deposited film of nickel and silicon on a silicon carbide...
US20130092958 NORMALLY-OFF III-NITRIDE METAL-2DEG TUNNEL JUNCTION FIELD-EFFECT TRANSISTORS  
Structures, devices and methods are provided for creating heterojunction AlGaN/GaN metal two-dimensional electron gas (2DEG) tunnel-junction field-effect transistors (TJ-FET). In one aspect,...
US20070200115 High power silicon carbide (SiC) PiN diodes having low forward voltage drops  
Silicon Carbide (SiC) PiN Diodes are provided having a reverse blocking voltage (VR) from about 3.0 kV to about 10.0 kV and a forward voltage (VF) of less than about 4.3 V.
US20140055173 POWER MODULE  
A power module includes an IGBT; a MOSFET connected in parallel with the IGBT; a lead frame having a first frame portion on which the IGBT is mounted and a second frame portion on which the MOSFET...
US20130248884 III-Nitride Power Device  
A III-nitride semiconductor device which includes a barrier body between the gate electrode and the gate dielectric thereof.
US20150041810 METHOD TO FABRICATE MICRO AND NANO DIAMOND DEVICES  
A method including forming a diamond material on the surface of a substrate; forming a first contact and a separate second contact; and patterning the diamond material to form a nanowire between...
US20130069057 WAFER WITH HIGH RUPTURE RESISTANCE  
A wafer with high rupture resistance includes a plurality of surfaces, wherein the surfaces include a largest surface having a largest area than others and a side surface connected to the fringe...
US20130161651 LOW 1C SCREW DISLOCATION 3 INCH SILICON CARBIDE WAFER  
A high quality single crystal wafer of SiC is disclosed having a diameter of at least about 3 inches and a 1 c screw dislocation density from about 500 cm−2 to about 2000 cm−2.
US20080099769 PRODUCTION OF AN INTEGRATED CIRCUIT INCLUDING ELECTRICAL CONTACT ON SiC  
Production of an integrated circuit including an electrical contact on SiC is disclosed. One embodiment provides for production of an electrical contact on an SiC substrate, in which a conductive...
US20140183553 TRANSISTOR STRUCTURES HAVING REDUCED ELECTRICAL FIELD AT THE GATE OXIDE AND METHODS FOR MAKING SAME  
A transistor device having reduced electrical field at the gate oxide interface is disclosed. In one embodiment, the transistor device comprises a gate, a source, and a drain, wherein the gate is...
US20110101377 HIGH TEMPERATURE ION IMPLANTATION OF NITRIDE BASED HEMTS  
A method is disclosed for forming a high electron mobility transistor. The method includes the steps of implanting a Group III nitride layer at a defined position with ions that when implanted...
US20120211769 Sic single crystal wafer and process for production thereof  
A SiC single crystal wafer on which a good quality epitaxial film by suppressing defects derived from the wafer can be grown has an affected surface layer with a thickness of at most 50 nm and a...
US20090072241 GRID-UMOSFET WITH ELECTRIC FIELD SHIELDING OF GATE OXIDE  
A trench metal oxide semiconductor field effect transistor or UMOSFET, includes a buried region that extends beneath the trench and beyond a corner of the trench. The buried region is tied to a...