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US20100038656 Nitride LEDs based on thick templates  
Thick HVPE templates of nitrides enhance both the growth conditions and resulting device performance of LEDs, power devices, solar cells, and other electrical elements. The use of HVPE templates...
US20120098102 DEFECT REDUCTION OF NON-POLAR AND SEMI-POLAR III-NITRIDES WITH SIDEWALL LATERAL EPITAXIAL OVERGROWTH (SLEO)  
A method of reducing threading dislocation densities in non-polar such as a-{11-20} plane and m-{1-100} plane or semi-polar such as {10-1n} plane III-Nitrides by employing lateral epitaxial...
US20090315150 III-Nitride Crystal Manufacturing Method, III-Nitride Crystal Substrate, and III-Nitride Semiconductor Device  
Affords methods of manufacturing bulk III-nitride crystals whereby at least the surface dislocation density is low globally. The present III-nitride crystal manufacturing method includes: a step...
US20130200495 BUFFER LAYER STRUCTURES SUITED FOR III-NITRIDE DEVICES WITH FOREIGN SUBSTRATES  
Embodiments of the present disclosure include a buffer structure suited for III-N device having a foreign substrate. The buffer structure can include a first buffer layer having a first aluminum...
US20120126239 LAYER STRUCTURES FOR CONTROLLING STRESS OF HETEROEPITAXIALLY GROWN III-NITRIDE LAYERS  
A III-N layer structure is described that includes a III-N buffer layer on a foreign substrate, an additional III-N layer, a first III-N structure, and a second III-N layer structure. The first...
US20120204957 METHOD FOR GROWING AlInGaN LAYER  
A method for growing an In(x)Al(y)Ga(1−x−y)N layer (where x is greater than zero and less than or equal to one, y is greater than or equal to zero and less than or equal to one and the sum of x...
US20100090312 Nitride semiconductor structure and method for manufacturing the same  
A nitride semiconductor substrate and a method for manufacturing the same are provided. The nitride semiconductor substrate includes an epitaxy substrate, a nitride pillar layer, a nitride...
US20080150085 GRUPPE-III-NITRID-HALBLEITERBAUELEMENT MIT HOCH P-LEITFAHIGER SCHICHT  
Group III nitride layers which are grown with standard c-axis orientation have a maximum hole concentration by means of magnesium doping of around 5×1017 cm−3. This restriction of the doping...
US20070278622 Gallium Nitride Device Substrate Contaning A Lattice Parameter Altering Element  
A gallium nitride device substrate comprises a layer of gallium nitride containing an additional lattice parameter altering element located over a substitute substrate.
US20110108954 Growth of Planar Non-Polar M-Plane Gallium Nitride With Hydride Vapor Phase Epitaxy (HVPE)  
A method of growing planar non-polar m-plane III-Nitride material, such as an m-plane gallium nitride (GaN) epitaxial layer, wherein the III-Nitride material is grown on a suitable substrate, such...
US20070257334 PROCESS FOR PRODUCING A III-N BULK CRYSTAL AND A FREE-STANDING III-N SUBSTRATE, AND III-N BULK CRYSTAL AND FREE-STANDING III-N SUBSTRATE  
Embodiments of the invention relate to a process for producing a III-N bulk crystal, wherein III denotes at least one element selected from group III of the periodic system, selected from Al, Ga...
US20090114943 Nitride semiconductor free-standing substrateand device using the same  
A nitride semiconductor free-standing substrate includes a surface inclined in a range of 0.03° to 1.0° from a C-plane, and an off-orientation that an angle defined between a C-axis and a tangent...
US20130221490 METHOD FOR GROWING GROUP 13 NITRIDE CRYSTAL AND GROUP 13 NITRIDE CRYSTAL  
To grow a gallium nitride crystal, a seed-crystal substrate is first immersed in a melt mixture containing gallium and sodium. Then, a gallium nitride crystal is grown on the seed-crystal...
US20120012984 METHOD FOR GROWING GROUP 13 NITRIDE CRYSTAL AND GROUP 13 NITRIDE CRYSTAL  
To grow a gallium nitride crystal, a seed-crystal substrate is first immersed in a melt mixture containing gallium and sodium. Then, a gallium nitride crystal is grown on the seed-crystal...
US20090194848 METHOD FOR MANUFACTURING GALLIUM NITRIDE CRYSTAL AND GALLIUM NITRIDE WAFER  
There is provided a method for fabricating a gallium nitride crystal with low dislocation density, high crystallinity, and resistance to cracking during polishing of sliced pieces by growing the...
US20130334666 Plasma-Assisted Atomic Layer Epitaxy of Cubic and Hexagonal InN and its alloys with AlN at Low Temperatures  
Described herein is a method for growing indium nitride (InN) materials by growing hexagonal and/or cubic InN using a pulsed growth method at a temperature lower than 300° C. Also described is a...
US20090160026 Nitride semiconductor free-standing substrate and method for making same  
A nitride semiconductor free-standing substrate includes a nitride semiconductor crystal and an inversion domain with a density of not less than 10/cm2 and not more than 600/cm2 in a section...
US20090001519 GROWTH OF PLANAR, NON-POLAR, GROUP-III NITRIDE FILMS  
Growth methods for planar, non-polar, Group-III nitride films are described. The resulting films are suitable for subsequent device regrowth by a variety of growth techniques.
US20050263854 Thick laser-scribed GaN-on-sapphire optoelectronic devices  
A sapphire wafer having a thickness greater than 125 microns and having devices disposed thereon is laser scribed to form a grid array pattern of laser scribe lines laser scribed into the sapphire...
US20140087209 METHOD OF GROWING GROUP III NITRIDE CRYSTALS  
The present invention provides a method of growing an ingot of group III nitride. Group III nitride crystals such as GaN are grown by the ammonothermal method on both sides of a seed to form an...
US20140087113 METHOD OF GROWING GROUP III NITRIDE CRYSTALS  
The present invention provides a method of growing an ingot of group III nitride. Group III nitride crystals such as GaN are grown by the ammonothermal method on both sides of a seed to form an...
US20120161288 THERMAL OXIDATION OF SINGLE CRYSTAL ALUMINUM ANTIMONIDE AND MATERIALS HAVING THE SAME  
In one embodiment, a method for forming a non-conductive crystalline oxide layer on an AlSb crystal includes heat treating an AlSb crystal in a partial vacuum atmosphere at a temperature conducive...
US20120153338 SUBSTRATE STRUCTURE AND FABRICATION THEREOF, AND LIGHT EMITTING DIODE DEVICES FABRICATED FROM THE SAME  
A substrate structure is described, including a starting substrate, crystal piers on the starting substrate, and a mask layer. The mask layer covers an upper portion of the sidewall of each...
US20090309189 METHOD FOR THE GROWTH OF INDIUM NITRIDE  
The present application relates to a method for the growth of indium nitride on a substrate by means of MOVPE in the presence of a noble gas as growth vector.
US20130341672 III Nitride Crystal Substrate and Light-Emitting Device  
Toward making available III nitride crystal substrates advantageously employed in light-emitting devices, and light-emitting devices incorporating the substrates, a III nitride crystal substrate...
US20110156213 METHOD OF MANUFACTURING NITRIDE SUBSTRATE, AND NITRIDE SUBSTRATE  
A method of manufacturing a nitride substrate includes the following steps. Firstly, a nitride crystal is grown. Then, the nitride substrate including a front surface is cut from the nitride...
US20120097919 LIMITING STRAIN RELAXATION IN III-NITRIDE HETERO-STRUCTURES BY SUBSTRATE AND EPITAXIAL LAYER PATTERNING  
A method of fabricating a substrate for a semipolar III-nitride device, comprising patterning and forming one or more mesas on a surface of a semipolar III-nitride substrate or epilayer, thereby...
US20110037075 PROCESS FOR FABRICATING A STRUCTURE FOR EPITAXY WITHOUT AN EXCLUSION ZONE  
A process for fabricating a composite structure for epitaxy, including at least one crystalline growth seed layer of semiconductor material on a support substrate, with the support substrate and...
US20120091467 IN-SITU DEFECT REDUCTION TECHNIQUES FOR NONPOLAR AND SEMIPOLAR (Al, Ga, In)N  
A method for growing reduced defect density planar gallium nitride (GaN) films is disclosed. The method includes the steps of (a) growing at least one silicon nitride (SiNx) nanomask layer over a...
US20090236694 Method of Manufacturing III-Nitride Crystal, and Semiconductor Device Utilizing the Crystal  
The present III-nitride crystal manufacturing method, a method of manufacturing a III-nitride crystal (20) having a major surface (20m) of plane orientation other than {0001}, designated by...
US20100155901 FABRICATING A GALLIUM NITRIDE LAYER WITH DIAMOND LAYERS  
In one aspect, a method includes fabricating a gallium nitride (GaN) layer with a first diamond layer having a first thermal conductivity and a second diamond layer having a second thermal...
US20130075867 METHOD OF PROCESSING A SURFACE OF GROUP III NITRIDE CRYSTAL AND GROUP III NITRIDE CRYSTAL SUBSTRATE  
There is provided a method of processing a surface of a group III nitride crystal, that includes the steps of: polishing a surface of a group III nitride crystal with a polishing slurry containing...
US20090302425 CARBON RIBBON TO BE COVERED WITH A THIN LAYER MADE OF SEMICONDUCTOR MATERIAL AND METHOD FOR DEPOSITING A LAYER OF THIS TYPE  
The present invention relates to a carbon ribbon for covering in a thin layer of semiconductor material, and to a method of deposited such a layer on a substrate constituted by a carbon ribbon. At...
US20100065854 GROWTH AND MANUFACTURE OF REDUCED DISLOCATION DENSITY AND FREE-STANDING ALUMINUM NITRIDE FILMS BY HYDRIDE VAPOR PHASE EPITAXY  
A Group III-nitride semiconductor film containing aluminum, and methods for growing this film. A film is grown by patterning a substrate, and growing the Group III-nitride semi-conductor film...
US20120199952 Method for Growth of Indium-Containing Nitride Films  
A method for growth of indium-containing nitride films is described, particularly a method for fabricating a gallium, indium, and nitrogen containing material. On a substrate having a surface...
US20120074524 LATERAL GROWTH METHOD FOR DEFECT REDUCTION OF SEMIPOLAR NITRIDE FILMS  
A lateral growth method for defect reduction of semipolar nitride films. The process steps include selecting a semipolar nitride plane and composition, selecting a suitable substrate for growth of...
US20090236595 Semiconductor Structures with Rare-earths  
The present invention discloses structures to increase carrier mobility using engineered substrate technologies for a solid state device. Structures employing rare-earth compounds enable...
US20130099357 STRAIN COMPENSATED REO BUFFER FOR III-N ON SILICON  
A method of fabricating a rare earth oxide buffered III-N on silicon wafer including providing a crystalline silicon substrate, depositing a rare earth oxide structure on the silicon substrate...
US20110042706 AlxGa(1-x)As Substrate, Epitaxial Wafer for Infrared LEDs, Infrared LED, Method of Manufacturing AlxGa(1-x)As Substrate, Method of Manufacturing Epitaxial Wafer for Infrared LEDs, and Method of Manufacturing Infrared LEDs  
Affords AlxGa(1-x)As (0≦x≦1) substrates, epitaxial wafers for infrared LEDs, infrared LEDs, methods of manufacturing AlxGa(1-x)As substrates, methods of manufacturing epitaxial wafers for infrared...
US20140151716 PROCESS FOR THE MANUFACTURE OF A DOPED III-N BULK CRYSTAL AND A FREE-STANDING III-N SUBSTRATE, AND DOPED III-N BULK CRYSTAL AND FREE-STANDING III-N SUBSTRATE AS SUCH  
A process for producing a doped III-N bulk crystal, wherein III denotes at least one element of the main group III of the periodic system, selected from Al, Ga and In, wherein the doped...
US20110062466 AlxGa(1-x)As Substrate, Epitaxial Wafer for Infrared LEDs, Infrared LED, Method of Manufacturing AlxGa(1-x)As Substrate, Method of Manufacturing Epitaxial Wafer for Infrared LEDs, and Method of Manufacturing Infrared LEDs  
Affords AlxGa(1-x)As (0≦x≦1) substrates epitaxial wafers for infrared LEDs, infrared LEDs, methods of manufacturing AlxGa(1-x)As substrates, methods of manufacturing epitaxial wafers for infrared...
US20110140173 Low OHMIC contacts containing germanium for gallium nitride or other nitride-based power devices  
An apparatus includes a substrate, a Group III-nitride layer over the substrate, and an electrical contact over the Group III-nitride layer. The electrical contact includes a stack having multiple...
US20120104557 Method for manufacturing a group III nitride crystal, method for manufacturing a group III nitride template, group III nitride crystal and group III nitride template  
A method for manufacturing a group III nitride crystal includes a step of mixing a group III source material and ammonia in a reactor including quartz, and growing a group III nitride crystal on a...
US20080083970 Method and materials for growing III-nitride semiconductor compounds containing aluminum  
A method for growing III-nitride films containing aluminum using Hydride Vapor Phase Epitaxy (HVPE) is disclosed, and comprises using corrosion-resistant materials in an HVPE system, the region of...
US20090236693 Planarization of Gan by Photoresist Technique Using an Inductively Coupled Plasma  
Films of III-nitride for semiconductor device growth are planarized using an etch-back method. The method includes coating a III-nitride surface having surface roughness features in the micron...
US20090140287 III Nitride Crystal Substrate, and Light-Emitting Device and Method of Its Manufacture  
Toward making available III nitride crystal substrates advantageously employed in light-emitting devices, and light-emitting devices incorporating the substrates and methods of manufacturing the...
US20140145201 METHOD AND SYSTEM FOR GALLIUM NITRIDE VERTICAL JFET WITH SEPARATED GATE AND SOURCE  
A semiconductor structure includes a III-nitride substrate and a first III-nitride epitaxial layer of a first conductivity type coupled to the III-nitride substrate. The semiconductor structure...
US20120305992 HYBRID MONOLITHIC INTEGRATION  
The present invention describes a hybrid integrated circuit comprising both CMOS and III-V devices, monolithically integrated in a single chip. It allows the almost complete elimination of the...
US20140061861 PLANARIZATION OF GaN BY PHOTORESIST TECHNIQUE USING AN INDUCTIVELY COUPLED PLASMA  
Films of III-nitride for semiconductor device growth are planarized using an etch-back method. The method includes coating a III-nitride surface having surface roughness features in the micron...
US20090267190 Freestanding III-Nitride Single-Crystal Substrate and Method of Manufacturing Semiconductor Device Utilizing the Substrate  
Freestanding III-nitride single-crystal substrates whose average dislocation density is not greater than 5×105 cm−2 and that are fracture resistant, and a method of manufacturing semiconductor...