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US20100084663 Silicon Carbide Zener Diode  
A silicon carbide Zener diode is a bipolar semiconductor device that has a mesa structure and includes a silicon carbide single crystal substrate of a first conductivity type, formed thereon, a...
US20070090488 High-efficiency matrix-type LED device  
A high-efficiency matrix-type LED device comprises an epitaxial wafer on which a plurality of independently insulated LEDs are formed by a method of manufacturing integrated circuits; and a...
US20090152681 NANO-MULTIPLICATION REGION AVALANCHE PHOTODIODES AND ARRAYS  
An avalanche photodiode with a nano-scale reach-through structure comprising n-doped and p-doped regions, formed on a silicon island on an insulator, so that the avalanche photodiode may be...
US20110266591 BI-DIRECTIONAL DIODE STRUCTURE  
In one embodiment, a bi-directional diode structure is formed to have a substantially symmetrical current-voltage characteristic.
US20090302424 METHOD OF FORMING A BI-DIRECTIONAL DIODE AND STRUCTURE THEREFOR  
In one embodiment, a bi-directional diode structure is formed to have a substantially symmetrical current-voltage characteristic.
US20090185316 ESD/EOS Performance by Introduction of Defects  
The invention relates to an avalanche diode that can be employed as an ESD protection device. An avalanche ignition region is formed at the p-n junction of the diode and includes an enhanced...
US20120211747 PN JUNCTIONS AND METHODS  
A PN junction includes first and second areas of silicon, wherein one of the first and second areas is n-type silicon and the other of the first and second areas is p-type silicon. The first area...
US20050051908 Diode exhibiting a high breakdown voltage  
A diode exhibiting a high reverse breakdown voltage is manufactured by employing a flame-resisting epoxy resin, the extract of which when extracted under predetermined conditions exhibits...
US20130026604 LATERAL AVALANCHE PHOTODIODE STRUCTURE  
A lateral avalanche photodiode structure including a substrate, a PN diode and a metal layer is provided. The substrate has at least one first electrode area, at least one light receiving area,...
US20110121429 LOW-VOLTAGE BIDIRECTIONAL PROTECTION DIODE  
A vertical bidirectional protection diode including, on a heavily-doped substrate of a first conductivity type, first, second, and third regions of the first, second, and first conductivity types,...
US20050275065 Diode with improved energy impulse rating  
An energy pulse clamping semiconductor diode includes a substrate having carriers of a first type of conductivity in a first, high concentration level (e.g. n++), a first major face and a second...
US20120074522 VERTICAL ZENER DIODE STRUCTURE AND MANUFACTURING METHOD OF THE SAME  
The present invention discloses a vertical zener diode structure, in which a deep N-sinker region and a P-implantation region of the zener diode are formed in an N-well within an epitaxial layer;...
US20090085164 WIRING BOARD  
There is provided a wiring board. The wiring board includes: a semiconductor substrate having a through hole and covered with an insulating film; a through electrode formed in the through hole; a...
US20150162417 ZENER DIODE DEVICES AND RELATED FABRICATION METHODS  
Zener diode structures and related fabrication methods and semiconductor devices are provided. An exemplary semiconductor device includes first and second Zener diode structures. The first Zener...
US20110095399 Method For Manufacturing Semiconductor Chips From A Wafer  
A method is for manufacturing semiconductor chips from a wafer which includes a plurality of semiconductor chips. Defects in the crystal structure of the chips may be substantially reduced by...
US20120061803 ASYMMETRICAL BIDIRECTIONAL PROTECTION COMPONENT  
An asymmetrical bidirectional protection component formed in a semiconductor substrate of a first conductivity type, including: a first implanted area of the first conductivity type; a first...
US20100252912 SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING THE SAME  
A method of manufacturing a semiconductor device, comprising the steps of preparing a structure including a semiconductor substrate, an element formed therein, a through hole formed to penetrate...
US20080054373 POWER SEMICONDUCTION DEVICE AND CIRCUIT MODULE HAVING SUCH POWER SEMICONDUCTION DEVICE  
A power semiconductor device includes a semiconductor chip, a first conductive piece, a second conductive piece and an encapsulating resin. The semiconductor chip includes a first electrode and a...
US20170148926 ZENER DIODE HAVING AN ADJUSTABLE BREAKDOWN VOLTAGE  
The present disclosure relates to a Zener diode including a Zener diode junction formed in a semiconductor substrate along a plane parallel to the surface of the substrate, and positioned between...
US20170110597 SEMICONDUCTOR DEVICE AND ZENER DIODE HAVING BRANCH IMPURITY REGIONS  
A semiconductor device includes a substrate, a well region of a first-conductivity type disposed in the substrate, a first impurity region of a second-conductivity type and having a plurality of...
US20160359056 DIODES AND FABRICATION METHODS THEREOF  
Diodes and fabrication methods thereof are presented. The diodes include, for instance: a first semiconductor region disposed at least partially within a substrate, the first semiconductor region...
US20160284686 Semiconductor Arrangement With Protection Circuit  
A semiconductor arrangement (10) with an electrostatic discharge (ESD) protection circuit is disclosed. The semiconductor arrangement (10) comprises a first semiconductor chip (20a) with a first...
US20160254390 ZENER DIODE  
A Zener diode includes a semiconductor substrate, an anode electrode and a cathode electrode. The semiconductor substrate includes a p-type anode region, an n-type current path region and a drift...
US20160163883 BIDIRECTIONAL ZENER DIODE  
A bidirectional Zener diode of the present invention includes a semiconductor substrate of a first conductivity type, a first electrode and a second electrode which are defined on the...
US20160079226 ELECTRONIC DEVICE INCLUDING A DIODE  
An electronic device can include a substrate, lower and upper semiconductor layers over the substrate, and a doped region at the interface between the lower and upper semiconductor layers. The...
US20160079218 ELECTROSTATIC PROTECTION DEVICE AND LIGHT-EMITTING MODULE  
An electrostatic protection device includes a base member formed of a high-resistance semiconductor material. External connecting lands are formed on a first principal surface of the base member...
US20150255628 BIDIRECTIONAL ZENER DIODE  
A bidirectional Zener diode of the present invention includes a semiconductor substrate of a first conductivity type, a first electrode and a second electrode which are defined on the...
US20150091136 ZENER DIODE HAVIING A POLYSILICON LAYER FOR IMPROVED REVERSE SURGE CAPABILITY AND DECREASED LEAKAGE CURRENT  
A semiconductor device such as a Zener diode includes a first semiconductor material of a first conductivity type and a second semiconductor material of a second conductivity type in contact with...
US20130175670 ZENER DIODE STRUCTURE AND MANUFACTURING METHOD THEREOF  
An exemplary embodiment illustrates a zener diode structure, wherein the zener diode structure includes a first-type semiconductor layer, a second-type semiconductor layer, a first electrode, a...
US20130020680 SEMICONDUCTOR STRUCTURE AND A METHOD FOR MANUFACTURING THE SAME  
A semiconductor structure and a method for manufacturing the same are provided. The semiconductor structure comprises a diode. The diode comprises a first doped region, a second doped region and a...
US20120223416 THIN-FILM SEMICONDUCTOR COMPONENT WITH PROTECTION DIODE STRUCTURE AND METHOD FOR PRODUCING A THIN-FILM SEMICONDUCTOR COMPONENT  
A thin-film semiconductor component includes a carrier and a semiconductor body with a semiconductor layer sequence including an active region provided to generate radiation. The semiconductor...
US20120080773 SWITCHABLE MEMORY DIODES BASED ON FERROELECTRIC/CONJUGATED POLYMER HETEROSTRUCTURES AND/OR THEIR COMPOSITES  
An embodiment of the present memory cell a first layer of a chosen conductivity type, and a second layer which includes ferroelectric semiconductor material of the opposite conductivity type, the...
US20110198728 INTEGRATED SEMICONDUCTOR DEVICE  
In one embodiment, a plurality of ESD devices are used to form an integrated semiconductor filter circuit. Additional diodes are formed in parallel with the ESD structures in order to increase the...
US20110175199 ZENER DIODE WITH REDUCED SUBSTRATE CURRENT  
A Zener diode is fabricated on a semiconductor substrate having semiconductor material thereon. The Zener diode includes a first well region having a first conductivity type, formed in the...
US20110115055 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF  
To provide a technique that can decrease the leak current due to the photoelectric effect in a semiconductor device with a Zener diode. In a bidirectional Zener diode IZD having a trench structure...
Matches 1 - 35 out of 35