Matches 1 - 21 out of 21


Match Document Document Title
US20140027776 Transistor and Method of Manufacturing a Transistor  
In accordance with an embodiment of the present invention a transistor is disclosed. The transistor comprises a collector, a base and an emitter, wherein a first end width of the base is larger...
US20110121428 HIGH GAIN TUNABLE BIPOLAR TRANSISTOR  
An improved bipolar transistor (40, 40′) is provided, manufacturable by a CMOS IC process without added steps. The improved transistor (40, 40′) comprises an emitter (48) having first (482) and...
US20110175198 ESD PROTECTION WITH INCREASED CURRENT CAPABILITY  
A stackable electrostatic discharge (ESD) protection clamp (21) for protecting a circuit core (24) comprises, a bipolar transistor (56, 58) having a base region (74, 51, 52, 85) with a base...
US20130307122 BIPOLAR TRANSISTOR WITH EMBEDDED EPITAXIAL EXTERNAL BASE REGION AND METHOD OF FORMING THE SAME  
The present invention discloses a bipolar transistor with an embedded epitaxial external base region, which is designed to solve the problem of the TED effect with the prior art structures. The...
US20060145299 Method for improving the electrical properties of active bipolar components  
A method for improving electrical characteristics of active bipolar components is provided. In conventional methods for improving the electrical characteristics of active bipolar components, the...
US20070007626 High-power-gain, bipolar transistor amplifier  
Improved radio frequency gain in a silicon-based bipolar transistor may be provided by adoption of a common-base configuration, preferably together with excess doping of the base to provide...
US20110101500 JUNCTION FIELD EFFECT TRANSISTOR  
A bipolar transistor, comprising a collector, a base and an emitter, in which the collector comprises a relatively heavily doped region, and a relatively lightly doped region adjacent the base,...
US20090026578 Vertical NPN Transistor Fabricated in a CMOS Process With Improved Electrical Characteristics  
A vertical NPN bipolar transistor includes a P-type semiconductor structure, an N-well as the collector, a P-Base region in the N-well and an N-type region as the emitter. The transistor further...
US20070278621 Bipolar Transistor with Raised Base Connection Region and Process for the Production Thereof  
A bipolar transistor has a base with an epitaxial base layer and a raised base connection region which in a lateral direction in parallel relationship with the substrate surface encloses the...
US20130056855 METHOD OF MANUFACTURING IC COMPRISING A BIPOLAR TRANSISTOR AND IC  
Disclosed is an integrated circuit and a method of manufacturing an integrated circuit comprising a bipolar transistor, the method comprising providing a substrate comprising a pair of isolation...
US20130168822 SELF ALIGNED STRUCTURES AND DESIGN STRUCTURE THEREOF  
Vertical bipolar junction structures, methods of manufacture and design structures. The method includes forming one or more sacrificial structures for a bipolar junction transistor (BJT) in a...
US20070023864 METHODS OF FABRICATING BIPOLAR TRANSISTOR FOR IMPROVED ISOLATION, PASSIVATION AND CRITICAL DIMENSION CONTROL  
A first (e.g. replaceable or disposable) dielectric spacer formed on a sidewall of a dummy emitter mandrel is removed after a raised extrinsic base layer and covering dielectric layer are formed....
US20080217742 TAILORED BIPOLAR TRANSISTOR DOPING PROFILE FOR IMPROVED RELIABILITY  
Bipolar transistor device structures that improve bipolar device reliability with little or no negative impact on device performance. In one embodiment, the bipolar device has a collector of first...
US20120061802 BIPOLAR JUNCTION TRANSISTOR  
A bipolar junction transistor includes a semiconductor island on an insulating substrate; an emitter and at least one of a collector and sub collector within the semiconductor island, the emitter...
US20140124895 RADIATION INDUCED DIODE STRUCTURE  
A semiconductor device containing an NPN bipolar junction transistor may be formed by forming a p-type radiation induced diode structure (RIDS) region in an intrinsic p-type base region of the NPN...
US20160380086 DEVICE PARAMETER NORMALIZATION ABOUT A PERIPHERY OF A NON-CIRCULAR EMITTER OF A LATERAL BIPOLAR TRANSISTOR  
Apparatus and associated methods relate to varying the base width around a non-circular emitter of a lateral bipolar transistor to vary a device parameter so as to compensate for variations in the...
US20160380055 EXTRINSIC BASE DOPING FOR BIPOLAR JUNCTION TRANSISTORS  
Device structure and fabrication methods for a bipolar junction transistor. A base layer is formed and an emitter is formed on a first portion of the base layer. A dopant-containing layer is...
US20160240634 BIPOLAR TRANSISTOR  
Presented is a bipolar transistor capable of improving a current amplification rate while improving voltage resistance. A bipolar transistor is provided with a p-type emitter region, a p-type...
US20160233323 BIPOLAR TRANSISTOR  
Disclosed herein is a bipolar transistor capable of improving a current amplification rate while improving voltage resistance. A bipolar transistor is provided with a p-type emitter region, a...
US20150179779 SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME  
A semiconductor structure and a method for forming same are provided. The semiconductor structure includes a bipolar transistor. The bipolar transistor includes a base doped contact, an emitter...
US20120068310 SEMICONDUCTOR DEVICE  
A carrier is prevented from being stored in a guard ring region in a semiconductor device. The semiconductor device has an IGBT cell including a base region and an emitter region formed in an n−...

Matches 1 - 21 out of 21