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US20090294903 ANTI-FUSSE STRUCTURE AND METHOD OF FABRICATING THE SAME  
An anti-fuse structure and a method of fabricating the same are described. The anti-fuse structure is disposed over a substrate having at least one device and a copper layer therein. The anti-fuse...
US20090273056 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME  
A semiconductor device includes a semiconductor substrate, and an electrical fuse provided on the semiconductor substrates. The electrical fuse includes a first fuse link and a second fuse link...
US20090273054 Non-volatile memory device and method of fabricating the same  
A non-volatile memory device and methods of fabricating the device according to example embodiments involve a stacked layer structure. The non-volatile memory device may include at least one first...
US20090261451 CIRCUIT PROTECTION DEVICE INCLUDING RESISTOR AND FUSE ELEMENT  
An integral circuit protection device includes a substrate disposed between first and second terminals. The substrate is composed of a resistive material. A first conductive layer is disposed on a...
US20090256235 Semiconductor device  
A semiconductor device ( 200 ) includes: an electrical fuse ( 100 ) including: a lower layer interconnect ( 120 ) formed on a substrate; a via ( 130 ) provided on the lower layer interconnect ( 120...
US20090256624 Antifuse and methods of operating and manufacturing the same  
Provided are an antifuse and methods of operating and manufacturing the same. The antifuse may include first and second conductors separate from each other; a dielectric layer for an antifuse...
US20090251201 Multi-level anti-fuse and methods of operating and fabricating the same  
Provided may be a multi-level anti-fuse and methods of fabricating and operating the same. The multi-level anti-fuse may include at least three anti-fuses having a plurality of anti-fuses connected...
US20090212389 SEMICONDUCTOR DEVICE WITH CAPACITOR AND FUSE, AND METHOD FOR MANUFACTURING THE SAME  
A semiconductor device with a capacitor and a fuse, and a method for manufacturing the same are described. The semiconductor device comprises a semiconductor substrate having a capacitor region and...
US20090206381 Anti-fuse and method for forming the same, unit cell of nonvolatile memory device with the same  
An anti-fuse includes a gate dielectric layer formed over a substrate, a gate electrode including a body portion and a plurality of protruding portions extending from the body portion, wherein the...
US20090206447 ANTI-FUSE DEVICE STRUCTURE AND ELECTROPLATING CIRCUIT STRUCTURE AND METHOD  
Disclosed are embodiments of a circuit and method for electroplating a feature (e.g., a BEOL anti-fuse device) onto a wafer. The embodiments eliminate the use of a seed layer and, thereby, minimize...
US20090140299 MEMORY WITH HIGH DIELECTRIC CONSTANT ANTIFUSES ADAPTED FOR USE AT LOW VOLTAGE  
A memory array having memory cells comprising a diode and an antifuse can be made smaller and programmed at lower voltage by using an antifuse material having a higher dielectric constant and a...
US20090127587 TUNABLE ANTIFUSE ELEMENTS  
A tunable antifuse element ( 102, 202, 204, 504, 952 ) includes a substrate material ( 101 ) having an active area ( 106 ) formed in a surface, a gate electrode ( 104 ) having at least a portion...
US20090115021 ANTIFUSE ELEMENT IN WHICH MORE THAN TWO VALUES OF INFORMATION CAN BE WRITTEN  
An antifuse element includes a plurality of MOS transistors; a first electrode to which source electrodes of the plurality of MOS transistors are commonly connected; a second electrode to which...
US20090108400 ANTI-FUSE STRUCTURE INCLUDING A SENSE PAD CONTACT REGION AND METHODS FOR FABRICATION AND PROGRAMMING THEREOF  
An antifuse structure includes a sense pad contact region that is separate from an anode contact region and a cathode contact region. By including the sense pad contact region that is separate from...
US20090109582 Method of protecting circuits using integrated array fuse elements and process for fabrication  
In one exemplary embodiment, a detector of electromagnetic radiation includes: a substrate; at least one layer of semiconductor material formed on the substrate, said at least one layer of...
US20090102014 Anti-Fuse Cell and Its Manufacturing Process  
An anti-fuse cell includes a standard MOS transistor of an integrated circuit, with source and drain regions covered with a metal silicide layer and at least one track of a resistive layer at least...
US20090096060 Antifuse structures, antifuse array structures, methods of manufacturing the same  
Antifuse structures, antifuse arrays, methods of manufacturing, and methods of operating the same are provided. An antifuse structure includes bitlines formed as first diffusing regions within a...
US20090085153 DIODE ARRAY AND METHOD OF MAKING THEREOF  
A method of making a non-volatile memory device includes providing a substrate having a substrate surface, and forming a non-volatile memory array over the substrate surface. The non-volatile...
US20090085154 VERTICAL DIODE BASED MEMORY CELLS HAVING A LOWERED PROGRAMMING VOLTAGE AND METHODS OF FORMING THE SAME  
In a first aspect, a method for forming a non-volatile memory cell is provided. The method includes (1) forming a metal-insulator-metal (MIM) antifuse stack including (a) a first metal layer; (b) a...
US20090086521 MULTIPLE ANTIFUSE MEMORY CELLS AND METHODS TO FORM, PROGRAM, AND SENSE THE SAME  
Methods are described to fabricate, program, and sense a multilevel one-time-programmable memory cell including a steering element such as a diode and two, three, or more dielectric antifuses in...
US20090072348 Integrated Circuits; Methods for Manufacturing an Integrated Circuit and Memory Module  
Embodiments of the present invention relate generally to integrated circuits, to methods for manufacturing an integrated circuit and to a memory module. In an embodiment of the invention, an...
US20090052221 SEMICONDUCTOR DEVICE INCLUDING ANTIFUSE ELEMENT  
An element isolation region exists at a side opposite to a diffusion layer region as seen from a channel region, without another electrode to which the same potential as one applied to the...
US20090026576 ANTI-FUSE  
An anti-fuse is provided. The anti-fuse includes a substrate, a gate disposed over the substrate, a gate dielectric layer sandwiched between the substrate and the gate, and two source/drain regions...
US20090026577 Antifuse element and semiconductor device including same  
To provide an antifuse element comprising a gate electrode, a depletion channel region, a gate insulating film between the gate electrode and the channel region, and a diffusion layer region...
US20080296697 Programmable semiconductor interposer for electronic package and method of forming  
Various structures of a programmable semiconductor interposer for electronic packaging are described. An array of semiconductor devices having various values is formed in said interposer. A user...
US20080290456 Electrical Fuse With Metal Silicide Pipe Under Gate Electrode  
An electrical fuse (eFuse) has a gate prepared from a conductive or partially conductive material such as polysilicon, a semiconductor substrate having a pipe region in proximity to the gate, and...
US20080251887 SERIAL SYSTEM FOR BLOWING ANTIFUSES  
A serial system and method for blowing antifuses are disclosed. One embodiment of antifuse system includes a plurality of latch devices connected in series from input to output. The system also...
US20080237862 Implementation of diffusion barrier in 3D memory  
One or more diffusion barriers are formed around one or more conductors in a three dimensional or 3D memory cell. The diffusion barriers allow the conductors to comprise very low resistivity...
US20080224260 Programmable Vias for Structured ASICs  
A semiconductor device may be created using multiple metal layers and a layer including programmable vias that may be used to form various patterns of interconnections among segments of metal...
US20080224229 Semiconductor device and manufacturing method thereof  
An object is to provide an antifuse with little power consumption at the time of writing. The antifuse is used for a memory element in a read-only memory device. The antifuse includes a first...
US20080217736 ELECTRICAL ANTIFUSE, METHOD OF MANUFACTURE AND METHOD OF PROGRAMMING  
An antifuse having a link including a region of unsilicided semiconductor material may be programmed at reduced voltage and current and with reduced generation of heat by electromigration of metal...
US20080217658 ELECTRICAL ANTIFUSE WITH INTEGRATED SENSOR  
The present invention provides structures for antifuses that utilize electromigration for programming. By providing a portion of antifuse link with high resistance without conducting material and...
US20080211060 ANTI-FUSE WHICH WILL NOT GENERATE A NON-LINEAR CURRENT AFTER BEING BLOWN AND OTP MEMORY CELL UTILIZING THE ANTI-FUSE  
An anti-fuse is formed with a transistor with a doped channel. The anti-fuse will not generate a non-linear current after the anti-fuse is blown. The anti-fuse is used in memory cells of one-time...
US20080197450 AMORPHOUS CARBON METAL-TO-METAL ANTIFUSE WITH ADHESION PROMOTING LAYERS  
A metal-to-metal antifuse having a lower metal electrode, a lower thin adhesion promoting layer disposed over the lower metal electrode, an amorphous carbon antifuse material layer disposed over...
US20080157125 TRANSISTOR BASED ANTIFUSE WITH INTEGRATED HEATING ELEMENT  
The present invention provides structures for an integrated antifuse that incorporates an integrated sensing transistor with an integrated heater. Two terminals connected to the upper plate allow...
US20080157270 Metal to Metal Low-K Antifuse  
The embodiments of the invention generally relate to fuse and anti-fuse structures and include a copper conductor positioned within a substrate and a metal cap on the first conductor. A low-k...
US20080157271 SEMICONDUCTOR DEVICE HAVING ANTIFUSE AND METHOD OF MANUFACTURING THE SAME  
A semiconductor device has a semiconductor substrate, an insulating layer formed on the semiconductor substrate, a wiring formed in the insulating layer and an antifuse including first and second...
US20080144355 Dielectric Antifuse for Electro-Thermally Programmable Device  
A thermally programmable memory has a programmable element ( 20 ) of a thermally programmable resistance preferably of phase change material, material and a blown antifuse ( 80 ) located adjacent...
US20080128853 Non-Volatile Memory Devices with Discrete Resistive Memory Material Regions and Methods of Fabricating the Same  
A semiconductor memory device includes a first conductive line on a semiconductor substrate, an interlayer insulating layer on the first conductive line, a second conductive line on the interlayer...
US20080116540 Stacked Switchable Element and Diode Combination With a Low Breakdown Switchable Element  
A device ( 10 ) comprises a semiconductor diode ( 12 ) and a switchable element ( 14 ) positioned in stacked adjacent relationship. The semiconductor diode ( 12 ) and the switchable element ( 14 )...
US20080111210 ANTIFUSE STRUCTURE HAVING AN INTEGRATED HEATING ELEMENT  
The present invention provides antifuse structures having an integrated heating element and methods of programming the same, the antifuse structures comprising first and second conductors and a...
US20080099878 Semiconductor Device and Manufacturing Method of the Same  
It is an object of the present invention to provide a high-performance and high reliable semiconductor device and to provide a technique of manufacturing the semiconductor device at low cost with...
US20080089108 Probe-based storage device  
In one embodiment, the present invention includes an apparatus having a conductive storage medium to store information in the form of electrostatic charge. The conductive storage medium can be...
US20080087982 Semiconductor Device and Manufacturing Method Thereof  
An object is to provide technology for manufacturing a higher-reliability memory device and a semiconductor device that is equipped with the memory device at low cost. A semiconductor device of the...
US20080079113 FUSE STRUCTURE INCLUDING CAVITY AND METHODS FOR FABRICATION THEREOF  
A fuse structure comprises a cavity interposed between a substrate and a fuse material layer. The cavity is not formed at a sidewall of the fuse material layer, or at a surface of the fuse material...
US20080073749 ANTIFUSE STRUCTURE HAVING AN INTEGRATED HEATING ELEMENT  
The present invention provides antifuse structures having an integrated heating element and methods of programming the same, the antifuse structures comprising first and second conductors and a...
US20080042235 Semiconductor memory device  
A semiconductor memory device for reliably inducing a breakdown in the dielectric when utilizing an antifuse to write on the dielectric film even when the process scale has become more detailed....
US20080036033 One-time programmable memory  
A one-time programmable memory. The memory has a substrate, a diffused electrode disposed on the substrate, a shallow trench isolation (STI) region formed on the substrate, a insulator formed on...
US20080029844 ANTI-FUSE STRUCTURE OPTIONALLY INTEGRATED WITH GUARD RING STRUCTURE  
An anti-fuse structure and a related method for fabricating the anti-fuse structure include a doped well within a semiconductor substrate. A first aperture and a second aperture that expose the...
US20080025135 ANTIFUSE CIRCUIT WITH WELL BIAS TRANSISTOR  
An antifuse circuit includes a terminal, an antifuse transistor, and a bias transistor. The antifuse transistor is formed on a substrate. The antifuse transistor is coupled to the terminal and...
Matches 1 - 50 out of 52 1 2 >