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US20080191304 Schottky Diode Structure with Silicon Mesa and Junction Barrier Schottky Wells  
A power diode having a silicon mesa atop the drift region includes a first contact positioned on the silicon mesa. The silicon mesa is highly doped p-type or n-type, and the anode may be formed on...
US20110089516 RECTIFIER  
Provided is a rectifier such as a detector in which a cutoff frequency may be increased in a view point different from the reduction in size of the structure. The rectifier includes: a Schottky...
US20110037139 SCHOTTKY BARRIER DIODE (SBD) AND ITS OFF-SHOOT MERGED PN/SCHOTTKY DIODE OR JUNCTION BARRIER SCHOTTKY (JBS) DIODE  
A merged PN/Schottky diode is provided having a substrate of a first conductivity type and a grid of doped wells of the second conductivity type embedded in the substrate. A Schottky barrier metal...
US20070007614 Schottky diode with improved surge capability  
An SiC Schottky diode die or a Si Schottky diode die is mounted with its epitaxial anode surface connected to the best heat sink surface in the device package. This produces a substantial increase...
US20090212331 SEMICONDUCTOR COMPONENT WITH SCHOTTKY ZONES IN A DRIFT ZONE  
A description is given of a semiconductor component comprising a drift zone of a first conduction type and at least one Schottky metal zone arranged in the drift zone, and of a method for...
US20080012089 METHOD OF FORMING A SCHOTTKY DIODE AND STRUCTURE THEREFOR  
In one embodiment, a Schottky diode is formed on a doped region having a thickness less than about eighteen microns.
US20090224353 Diode  
A diode includes the following: an n type semiconductor region; a p type semiconductor region provided in a part of a front face of the n type semiconductor region; an anode electrode (front face...
US20130161779 SUPER TRENCH SCHOTTKY BARRIER SCHOTTKY DIODE  
A Schottky diode includes an n+-substrate, an n-epilayer, trenches introduced into the n-epilayer, floating Schottky contacts being located on their side walls and on the entire trench bottom,...
US20120306043 JUNCTION BARRIER SCHOTTKY (JBS) WITH FLOATING ISLANDS  
A Schottky diode includes a Schottky barrier and a plurality of dopant regions disposed near the Schottky barrier as floating islands to function as PN junctions for preventing a leakage current...
US20110251071 Method of Realization of Hyperconductivity and Super Thermal Conductivity  
The application relates to electricity, electro-physics and thermo conductivity of materials, to the phenomena of zero electric resistance, i.e. to hyperconductivity (superconductivity) and zero...
US20150054115 TRENCH SCHOTTKY RECTIFIER DEVICE AND METHOD FOR MANUFACTURING THE SAME  
A trench Schottky rectifier device includes a substrate having a first conductivity type, a plurality of trenches formed in the substrate, and an insulating layer formed on sidewalls of the...
US20060022291 Unguarded schottky diodes with sidewall spacer at the perimeter of the diode  
An unguarded Schottky barrier diode structure, which may be part of an integrated device, is provided that blocks the formation of a parasitic MIS diode at the diode's perimeter. The diode is...
US20130293031 Diode, Use Thereof, And A Method For Producing The Same  
High frequency currents may be rectified by means of a printable diode comprising a first and a second electrode, between which a semiconducting layer comprising semiconducting particles embedded...
US20130320482 High-Voltage Monolithic Schottky Device Structure  
A semiconductor device includes a pillar formed on a substrate of the same conductivity type. The pillar has a vertical thickness that extends from a top surface down to the substrate. The pillar...
US20080116538 MULTIGATE SCHOTTKY DIODE  
A multigate Schottky diode comprising an electrically conducting active semiconductor region;first and second electrically connected metallic contact arms on the active semiconductor region...
US20130181319 Trench Schottky Barrier Diode and Manufacturing Method Thereof  
The present invention discloses a trench Schottky barrier diode (SBD) and a manufacturing method thereof. The trench SBD includes: an epitaxial layer, formed on a substrate; multiple mesas,...
US20090102007 Lateral Power Diode with Self-Biasing Electrode  
A semiconductor diode includes a drift region of a first conductivity type and an anode region of a second conductivity type in the drift region such that the anode region and the drift region...
US20090309181 TRENCH SCHOTTKY WITH MULTIPLE EPI STRUCTURE  
A trench Schottky barrier rectifier includes an cathode electrode at a face of a semiconductor substrate and an multiple epitaxial structure in drift region which in combination provide high...
US20100224952 SCHOTTKY BARRIER DIODE AND METHOD OF PRODUCING THE SAME  
A Schottky barrier diode includes an epitaxial growth layer disposed on a substrate and having a mesa portion, and a Schottky electrode disposed on the mesa portion, wherein a distance between an...
US20070052057 Method and Schottky diode structure for avoiding intrinsic NPM transistor operation  
A Schottky diode includes an isolation region of a first conductivity type and an anode region of a second conductivity type isolated by the isolation region, the anode region including a lightly...
US20090224355 SEMICONDUCTOR DEVICE WITH BUFFER LAYER  
A semiconductor device in one embodiment includes a depletion junction, a peripheral region adjacent the depletion junction, and a buffer layer. The buffer layer is adapted to reduce localization...
US20140151841 SEMICONDUCTOR DEVICES HAVING A POSITIVE-BEVEL TERMINATION OR A NEGATIVE-BEVEL TERMINATION AND THEIR MANUFACTURE  
Disclosed herein are techniques of manufacturing semiconductor devices having a positive-bevel termination and/or a negative-bevel termination. In a particular example, techniques are disclosed...
US20100327394 EM RECTIFYING ANTENNA SUITABLE FOR USE IN CONJUCTION WITH A NATURAL BREAKDOWN DEVICE  
A rectenna capable of power conversion from electromagnetic (EM) waves of high frequencies is provided. In one embodiment, a rectenna element generates currents from two sources—based upon the...
US20120205771 SCHOTTKY DIODE WITH LOW FORWARD VOLTAGE DROP  
A Schottky diode with a low forward voltage drop has an N− type doped drift layer formed on an N+ type doped layer. The N− type doped drift layer has a first surface with a protection ring inside...
US20140117487 SCHOTTKY BARRIER DIODE  
A Schottky barrier diode includes a semiconductor layer having a plurality of trenches formed by digging in from a top surface and having mesa portions formed between adjacent trenches, and a...
US20120018836 SCHOTTKY BARRIER DIODE  
A Schottky barrier diode includes a semiconductor layer having a plurality of trenches formed by digging in from a top surface and having mesa portions formed between adjacent trenches, and a...
US20060022293 Economical and very simple to fabricate single device equivalent to CMOS, and other semiconductor devices in compensated semiconductor  
Semiconductor devices formed in fully or partially compensated semiconductor, substrate or epi-layer , including minimal current flow voltage switching devices with at least one junction which is...
US20140183439 CURRENT SELECTOR FOR NON-VOLATILE MEMORY IN A CROSS BAR ARRAY BASED ON DEFECT AND BAND ENGINEERING METAL-DIELECTRIC-METAL STACKS  
Selector devices that can be suitable for memory device applications can have low leakage currents at low voltages to reduce sneak current paths for non selected devices, and high leakage currents...
US20140048901 RECTIFIER OF ALTERNATING-CURRENT GENERATOR FOR VEHICLE  
In a rectifier device (2) for full-wave rectifying an output of a vehicle alternating-current generator (1), a schottky barrier diode having a characteristic whose forward voltage drop with...
US20130285136 Schottky diode with enhanced breakdown voltage  
An apparatus of and method for making enhanced Schottky diodes having p-body regions operable to pinch a current flow path in a high-voltage n-well region and field plate structures operable to...
US20090243026 Schottky Barrier Diode and Method for Using the Same  
An intermediate metal film is formed between a Schottky electrode and a pad electrode. A Schottky barrier height between the intermediate metal film and a silicon carbide epitaxial film is...
US20080017896 Embedded semiconductor component  
A process is disclosed for in-situ fabricating a semiconductor component imbedded in a substrate. A substrate is ablated with a first laser beam to form a void therein. A first conductive element...
US20100155876 Junction barrier Schottky (JBS) with floating islands  
A Schottky diode includes a Schottky barrier and a plurality of dopant regions disposed near the Schottky barrier as floating islands to function as PN junctions for preventing a leakage current...
US20110233382 Method and Apparatus for High Resolution Photon Detection Based on Extraordinary Optoconductance (EOC) Effects  
The inventors disclose a new high performance optical sensor, preferably of nanoscale dimensions, that functions at room temperature based on an extraordinary optoconductance (EOC) phenomenon, and...
US20120168893 Mesa edge shielding trench Schottky rectifier and method of manufacture thereof  
A mesa edge shielding trench Schottky rectifier includes a semiconductor substrate; an epitaxial layer grown on the first surface of the semiconductor substrate; a plurality of trenches spaced...
US20150137060 HIGH RECTIFYING RATIO DIODE  
Devices and methods for forming a device are disclosed. The device includes a substrate and a selector diode disposed over the substrate. The diode includes first and second terminals. The first...
US20130069028 SELECT DEVICES FOR MEMORY CELL APPLICATIONS  
Select devices for memory cell applications and methods of forming the same are described herein. As an example, one or more non-ohmic select devices can include at least two tunnel barrier...
US20080308838 Power switching transistors  
In an embodiment, a integrated semiconductor device includes a first Vertical Junction Field Effect Transistor (VJFET) having a source, and a gate disposed on each side of the first VJFET source,...
US20110101485 Detector for Plastic Optical Fiber Networks  
An apparatus comprises a substrate having a type of conductivity, an intrinsic region above the substrate, and a metal layer on a portion of the surface of the intrinsic region. The intrinsic...
US20080017947 CIRCUIT HAVING A SCHOTTKY CONTACT COMPONENT  
A circuit having a Schottky contact component is disclosed. One embodiment provides a semiconductor substrate having a layer of a first conductivity type, a metal layer, and delimited...
US20120067410 SCHOTTKY-BARRIER JUNCTION ELEMENT, AND PHOTOELECTRIC CONVERSION ELEMENT AND SOLAR CELL USING THE SAME  
A Schottky-barrier junction element 1 has a Schottky-barrier junction between an organic semiconductor 3 and an organic conductor 4. The inorganic semiconductor 3 is any one of nitride...
US20120205772 TRENCH SCHOTTKY DIODE AND MANUFACTURING METHOD THEREOF  
A trench Schottky diode and a manufacturing method thereof are provided. A plurality of trenches are formed in Asemiconductor substrate. A plurality of doped regions are formed in the...
US20120199937 INTEGRATED CIRCUIT  
An integrated circuit including a Schottky diode, and a method of making the same. The diode includes an active region bordered by an isolation region in a semiconductor substrate of the...
US20060292839 Contacts fabric using heterostructure of metal/semiconductor nanorods and fabrication method thereof  
Provided are a contact fabric using a heterostructure of metal/semiconductor nanorods and a method of manufacturing the same. An ohmic contact fabric having a low contact resistance or a Schottky...
US20060113624 LOCOS-based Schottky barrier diode and its manufacturing methods  
The LOCOS-based Schottky barrier diode of the present invention comprises a raised diffusion guard ring surrounded by an outer LOCOS field oxide layer, a recessed semiconductor substrate with or...
US20100258897 Trench junction barrier controlled Schottky  
A method for manufacturing a Schottky diode comprising steps of 1) providing a region with a dopant of a second conductivity type opposite to a first conductivity type to form a top doped region...
US20060076639 Schottky diodes and methods of making the same  
In one aspect, a Schottky diode includes a semiconductor material, and a metal material forming a Schottky barrier junction with the semiconductor material, wherein a cavity having a lateral...
US20150001616 TRENCH MOSFET WITH INTEGRATED SCHOTTKY BARRIER DIODE  
A Schottky diode includes first and second trenches formed in a semiconductor layer where the first and second trenches are lined with a thin dielectric layer and filled partially with a trench...
US20090057711 SEMICONDUCTOR DEVICE WITH A U-SHAPE DRIFT REGION  
A semiconductor device with a U-shape drift region comprises a semiconductor substrate of a first conductivity type, a trench filled with an insulator material formed in a portion of a first main...
US20120205770 SCHOTTKY DIODE WITH HIGH ANTISTATIC CAPABILITY  
A Schottky diode with high antistatic capability has an N− type doped drift layer formed on an N+ type doped layer. The N− type doped drift layer has a surface formed with a protection ring....

Matches 1 - 50 out of 133 1 2 3 >