Matches 1 - 18 out of 18


Match Document Document Title
US20070222017 PHOTODETECTOR ARRANGEMENT, MEASUREMENT ARRANGEMENT WITH A PHOTODETECTOR ARRANGEMENT AND PROCESS FOR OPERATING A MEASUREMENT ARRANGEMENT  
A photodetector arrangement has a semiconductor body with a substrate, and first, second and third layers. The first layer is located at the first main surface of the semiconductor body which is...
US20090026569 Ultra high-resolution radiation detector (UHRD) and method for fabrication thereof  
An ultra high-resolution radiation detector and method for fabrication thereof, has a detector chip, comprising the so-called drift rings and an amplifier integrated with the diode component,...
US20080150069 Semiconductor Photodiode and Method of Making  
A semiconductor photodiode (18) is formed as a pn-junction between a region (2) of a first conductivity type and a region (6) of a second conductivity type. The region (6) of the second...
US20140232917 SOLID STATE IMAGE PICK-UP DEVICE, AND PIXEL  
A pixel 10 includes a photodiode PD which is provided between a first barrier region 21 forming a first potential barrier B1 and a second barrier region 27 forming a second potential barrier B2, a...
US20140077325 IMAGING PIXELS WITH IMPROVED PHOTODIODE STRUCTURES  
A photodiodes may be formed on a substrate such as an imager substrate. The photodiode may include first and second layers in the substrate that form a p-n junction. The first layer may have a...
US20140264711 LIGHT SENSOR WITH VERTICAL DIODE JUNCTIONS  
Light sensors are described that include a trench structure integrated therein. In an implementation, the light sensor includes a substrate having a dopant material of a first conductivity type...
US20100139759 OPTICAL DEVICE  
The present invention relates to an optical device and to a method of fabricating the same. In embodiments, the invention relates to a photovoltaic device or solar cell. The optical device...
US20100025787 System and method for providing a high frequency response silicon photodetector  
A Silicon photodetector contains an insulating substrate having a top surface and a bottom surface. A Silicon layer is located on the top surface of the insulating substrate, where the Silicon...
US20130284269 STRAIN-ENHANCED SILICON PHOTON-TO-ELECTRON CONVERSION DEVICES  
Improved silicon solar cells, silicon image sensors and like photosensitive devices are made to include strained silicon at or sufficiently near the junctions or other active regions of the...
US20150103349 Photodetector with Controllable Spectral Response  
A photodetector includes a semiconductor substrate having an irradiation zone configured to generate charge carriers having opposite charge carrier types in response to an irradiation of the...
US20160197216 PHOTODIODES INCLUDING SEED LAYER  
A photodiode includes a semiconductor substrate, a crystalline layer on the semiconductor substrate, an insulating pattern layer on the crystalline layer to define a plurality of holes exposing a...
US20160197211 METHOD OF MANUFACTURING A PHOTOELECTRIC AND THERMOELECTRIC SENSOR, AND PHOTOELECTRIC AND THERMOELECTRIC SENSOR  
A method of manufacturing a photoelectric and thermoelectric sensor includes the steps of: preparing a silicon substrate and an etching solution that includes hydrofluoric acid, isopropyl alcohol...
US20160181453 PHOTODETECTOR CELL AND SOLAR PANEL WITH DUAL METAL CONTACTS AND RELATED METHODS  
A photodetector cell may include a substrate, and a first contact carried by the substrate and having a first work function value. The photodetector cell may include a second contact carried by...
US20160123801 VECTOR LIGHT SENSOR AND ARRAY THEREOF  
A vector light sensor (VLS) includes a substrate and a sensor structure. The substrate includes a major surface. The sensor structure includes a pyramid structure, light-sensitive areas, and...
US20160064428 Solid-State Image Capturing Device And Manufacturing Method Thereof  
An aspect of the invention is a solid-state image capturing device that includes a P-type well 12, an N-type low concentration diffusion layer 18 formed in the P-type well 12, a P-type surface...
US20150187972 SEMICONDUCTOR PHOTODETECTOR ELEMENT AND METHOD  
A semiconductor photodetector element includes a semiconductor substrate having a first conductivity type; a columnar structure formed on a first surface of the semiconductor substrate, the...
US20150179842 RECTIFIER AND TERAHERTZ DETECTOR USING THE SAME  
Disclosed is a rectifier capable of performing a high speed rectifying operation, and includes: a first semiconductor layer; a second semiconductor layer; and a third semiconductor layer, in which...
US20150037048 LOW VOLTAGE PHOTODETECTORS  
A low voltage photodetector structure including a semiconductor device layer, which may be Ge, is disposed over a substrate semiconductor, which may be Si, for example within a portion of a...

Matches 1 - 18 out of 18