Match Document Document Title
US20150179925 MAGNETIC MULTILAYER STACK  
A magnetic multilayer stack for a magnetoresistance device and a method of forming the multilayer stack is disclosed. In one aspect, the magnetic multilayer stack comprises a composite soft layer...
US20110180888 MAGNETIC STACK DESIGN  
A magnetic stack having a free layer having a switchable magnetization orientation, a reference layer having a pinned magnetization orientation, and a barrier layer therebetween. The stack...
US20140210023 Vertical Hall Effect Element with Improved Sensitivity  
A vertical Hall Effect element includes a low voltage P-well region disposed at a position between pickups of a vertical Hall Effect element to result in an improved sensitivity of the vertical...
US20130146996 MAGNETIC DEVICE FABRICATION  
The present disclosure provides for magnetic devices and methods of fabricating such a device. In one embodiment, a magnetic device includes a first elliptical pillar of first material layers; a...
US20130032909 HALL EFFECT ELEMENT HAVING A WIDE CROSS SHAPE WITH DIMENSIONS SELECTED TO RESULT IN IMPROVED PERFORMANCE CHARACTERISTICS  
A Hall effect element includes a Hall plate having geometric features selected to result in a highest ratio of a sensitivity divided by a plate resistance. The resulting shape is a so-called...
US20140264667 Vertical Hall Effect Element With Structures to Improve Sensitivity  
A vertical Hall Effect element includes one or more of: a low voltage P-well region disposed at a position between pickups of the vertical Hall Effect element, Light-N regions disposed under the...
US20130001720 MAGNETIC STACK HAVING REFERENCE LAYERS WITH ORTHOGONAL MAGNETIZATION ORIENTATION DIRECTIONS  
A magnetic cell includes a ferromagnetic free layer having a free magnetization orientation direction and a first ferromagnetic pinned reference layer having a first reference magnetization...
US20110260274 MAGNETIC STACK HAVING REFERENCE LAYERS WITH ORTHOGONAL MAGNETIZATION ORIENTATION DIRECTIONS  
A magnetic cell includes a ferromagnetic free layer having a free magnetization orientation direction and a first ferromagnetic pinned reference layer having a first reference magnetization...
US20110006385 MAGNETIC STACK HAVING REFERENCE LAYERS WITH ORTHOGONAL MAGNETIZATION ORIENTATION DIRECTIONS  
A magnetic cell includes a ferromagnetic free layer having a free magnetization orientation direction and a first ferromagnetic pinned reference layer having a first reference magnetization...
US20130087868 INTEGRATED HALL-CONTROLLED SWITCH DEVICES  
Embodiments relate to Hall-controlled switch devices. In an embodiment, a Hall switch and a load switch are integrated in a single integrated circuit device. Embodiments can provide load switching...
US20140027869 AMORPHOUS ALLOY SPACER FOR PERPENDICULAR MTJs  
A perpendicular magnetic tunnel junction (MTJ) apparatus includes a tunnel magnetoresistance (TMR) enhancement buffer layer deposited between the tunnel barrier layer and the reference layers An...
US20140103469 Seed Layer for Multilayer Magnetic Materials  
A magnetic element is disclosed wherein a composite seed layer such as TaN/Mg enhances perpendicular magnetic anisotropy (PMA) in an overlying magnetic layer that may be a reference layer, free...
US20150097255 TUNNELING MAGNETO-RESISTIVE SENSORS WITH BUFFER LAYERS  
In certain embodiments, a tunneling magneto-resistive (TMR) sensor includes a sensor stack positioned between a seed layer and a cap layer. The seed layer includes a first buffer layer that...
US20120001280 Hall sensor  
Provided is a highly-sensitive Hall element capable of eliminating an offset voltage without increasing the chip size. The Hall element includes: a Hall sensing portion having a shape of a cross...
US20130277780 TMR Device with Low Magnetoresistive Free Layer  
A high performance TMR sensor is fabricated by employing a free layer with a trilayer configuration represented by FeCo/CoFeB/CoB, FeCo/CoB/CoFeB, FeCo/CoFe/CoB, or FeCo/FeB/CoB may also be...
US20120193738 TMR Device with Low Magnetorestriction Free Layer  
A high performance TMR sensor is fabricated by employing a free layer with a trilayer configurations represented by FeCo/CoFeB/CoB, FeCo/CoB/CoFeB, FeCo/CoFe/CoB, or FeCo/FeB/CoB may also be...
US20140001585 MAGNETIC STACK WITH ORTHOGONAL BIASING LAYER  
Various embodiments may configure a magnetic stack with a magnetically free layer, a reference structure, and a biasing layer. The magnetically free layer and reference structure can each be...
US20140084398 PERPENDICULAR MTJ STACKS WITH MAGNETIC ANISOTROPY ENHANCING LAYER AND CRYSTALLIZATION BARRIER LAYER  
Magnetic tunnel junctions (MTJ) suitable for spin transfer torque memory (STTM) devices, include perpendicular magnetic layers and one or more anisotropy enhancing layer(s) separated from a free...
US20140042567 MTJ MRAM WITH STUD PATTERNING  
Use of a multilayer etching mask that includes a stud mask and a removable spacer sleeve for MTJ etching to form a bottom electrode that is wider than the rest of the MTJ pillar is described. The...
US20140070341 Minimal Thickness Synthetic Antiferromagnetic (SAF) Structure with Perpendicular Magnetic Anisotropy for STT-MRAM  
A synthetic antiferromagnetic (SAF) structure for a spintronic device is disclosed and has an AP2/antiferromagnetic (AF) coupling/CoFeB configuration. The SAF structure is thinned to reduce the...
US20120248556 THREE-DIMENSIONAL MAGNETIC CIRCUITS INCLUDING MAGNETIC CONNECTORS  
A device including at least two spintronic devices and a method of making the same. A magnetic connector extends between the two spintronic devices to conduct a magnetization between the two. The...
US20140264655 SURFACE ROUGHENING TO REDUCE ADHESION IN AN INTEGRATED MEMS DEVICE  
In an integrated MEMS device, moving silicon parts with smooth surfaces can stick together if they come into contact. By roughening at least one smooth surface, the effective area of contact, and...
US20140175578 DIFFUSIONLESS TRANSFORMATIONS IN MTJ STACKS  
A method and system provide a magnetic junction usable in a magnetic device. The magnetic junction includes a plurality of magnetic layers including a nonmagnetic spacer layer. The magnetic...
US20120001279 Hall sensor  
Provided is a highly-sensitive Hall element capable of eliminating an offset voltage without increasing the chip size. At the four vertices of a square Hall sensing portion, Hall voltage output...
US20130234266 MAGNETIC TUNNEL JUNCTION WITH AN IMPROVED TUNNEL BARRIER  
The present disclosure concerns a method of fabricating a magnetic tunnel junction suitable for a magnetic random access memory (MRAM) cell and comprising a first ferromagnetic layer, a tunnel...
US20090224340 ANTIFERROMAGNETIC HALF-METALLIC SEMICONDUCTOR AND MANUFACTURING METHOD THEREFOR  
An antiferromagnetic half-metallic semiconductor of the present invention is manufactured by adding to a semiconductor two or more types of magnetic elements including a magnetic element with a...
US20140091411 Repeated Spin Current Interconnects  
One embodiment includes a metal layer including first and second metal portions; a ferromagnetic layer including a first ferromagnetic portion that directly contacts the first metal portion and a...
US20120086089 MAGNETIC TUNNEL JUNCTION DEVICE AND FABRICATION  
A magnetic tunnel junction (MTJ) device and fabrication method is disclosed. A particular embodiment includes a magnetic tunnel junction structure above a bottom electrode. The particular...
US20130228884 MAGNETIC STACK HAVING ASSIST LAYERS  
A magnetic tunnel junction having a ferromagnetic free layer and a ferromagnetic pinned reference layer, each having an out-of-plane magnetic anisotropy and an out-of-plane magnetization...
US20110058412 MAGNETIC STACK HAVING ASSIST LAYER  
A magnetic tunnel junction having a ferromagnetic free layer and a ferromagnetic pinned reference layer, each having an out-of-plane magnetic anisotropy and an out-of-plane magnetization...
US20120112299 FERROMAGNETIC TUNNEL JUNCTION STRUCTURE AND MAGNETORESISTIVE ELEMENT USING THE SAME  
For the present ferromagnetic tunnel junction structure, employed is a means characterized by using an MgO barrier and using a Co2FeAl full-Heusler alloy for any of the ferromagnetic layers...
US20140035074 Multilayers Having Reduced Perpendicular Demagnetizing Field Using Moment Dilution for Spintronic Applications  
A magnetic element is disclosed that has a composite free layer with a FM1/moment diluting/FM2 configuration wherein FM1 and FM2 are magnetic layers made of one or more of Co, Fe, Ni, and B and...
US20150194596 PERPENDICULAR MTJ STACKS WITH MAGNETIC ANISOTROPHY ENHANCING LAYER AND CRYSTALLIZATION BARRIER LAYER  
Magnetic tunnel junctions (MTJ) suitable for spin transfer torque memory (STTM) devices, include perpendicular magnetic layers and one or more anisotropy enhancing layer(s) separated from a free...
US20110198711 SYSTEM AND METHOD FOR AN INTEGRATED ELECTRONIC AND OPTICAL MEMS BASED SENSOR  
This patent discloses an integrated electronic and optical MEMS (micro-electro-mechanical systems) based sensor wherein the same embossed diaphragm is used as the sensing element of both...
US20140264670 CELL DESIGN FOR EMBEDDED THERMALLY-ASSISTED MRAM  
A thermally assisted magnetoresistive random access memory cell, a corresponding array, and a method for fabricating the array. An example cell includes a first metal layer, a second metal layer,...
US20140264666 CELL DESIGN FOR EMBEDDED THERMALLY-ASSISTED MRAM  
A thermally assisted magnetoresistive random access memory cell, a corresponding array, and a method for fabricating the array. An example cell includes a first metal layer, a second metal layer,...
US20140217525 METHOD OF IMPROVING SENSITIVITY OF TERRESTRIAL MAGNETISM SENSOR AND APPARATUS USING THE SAME  
Disclosed herein are a method of improving sensitivity of a terrestrial magnetism sensor and an apparatus using the same. A method of forming a terrestrial magnetism sensor includes: cleaning a...
US20120104522 MAGNETIC TUNNEL JUNCTION CELLS HAVING PERPENDICULAR ANISOTROPY AND ENHANCEMENT LAYER  
A magnetic tunnel junction cell that includes a ferromagnetic free layer; an enhancement layer having a thickness of at least about 15 Å; an oxide barrier layer; and a ferromagnetic reference...
US20120091548 FERROMAGNETIC TUNNEL JUNCTION STRUCTURE, AND MAGNETO-RESISTIVE ELEMENT AND SPINTRONICS DEVICE EACH USING SAME  
Disclosed is a ferromagnetic tunnel junction structure which is characterized by having a tunnel barrier layer that comprises a non-magnetic material having a spinel structure. The ferromagnetic...
US20120205759 MAGNETIC TUNNEL JUNCTION WITH SPACER LAYER FOR SPIN TORQUE SWITCHED MRAM  
A magnetic tunnel junction (MTJ) includes first and second magnetic layers; a tunnel barrier located between the first and second magnetic layers; a first spacer layer located between the first...
US20120146165 MAGNETIC FIELD CURRENT SENSORS  
Embodiments relate to magnetic field current sensors. In an embodiment, a method of forming a conductor clip for a magnetic field current sensor comprises forming a footprint portion; forming...
US20120241885 MAGNETIC DEVICES AND STRUCTURES  
Magnetic devices, magnetoresistive structures, and methods and techniques associated with the magnetic devices and magnetoresistive structures are presented. For example, a magnetic device is...
US20110051503 Magnetic Devices and Structures  
Magnetic devices, magnetoresistive structures, and methods and techniques associated with the magnetic devices and magnetoresistive structures are presented. For example, a magnetic device is...
US20140063895 LOW COST PROGRAMMABLE MULTI-STATE DEVICE  
A one time programmable (OPT) and multiple time programmable (MTP) structure is constructed in a back end of line (BEOL) process using only one, two or three masks. The OTP/MTP structure can be...
US20140306302 Fully Compensated Synthetic Antiferromagnet for Spintronics Applications  
A synthetic antiferromagnet serving as a reference layer for a magnetic tunnel junction is a laminate with a plurality of “x+1” magnetic sub-layers and “x” non-magnetic spacers arranged in an...
US20120181641 SENSOR MODULE  
A sensor module includes a sensor, a module cover, and a wiring unit. The cover holds the sensor and includes a connector configured to make a connection with an external device. The wiring unit...
US20140015074 PRECESSIONAL REVERSAL IN ORTHOGONAL SPIN TRANSFER MAGNETIC RAM DEVICES  
Orthogonal spin-torque bit cells whose spin torques from a perpendicular polarizer and an in-plane magnetized reference layer are constructively or destructively combined. An orthogonal...
US20150001656 Minimal Thickness Synthetic Antiferromagnetic (SAF) Structure with Perpendicular Magnetic Anisotropy for STT-MRAM  
A synthetic antiferromagnetic (SAF) structure for a spintronic device is disclosed and has an FL2/AF coupling/CoFeB configuration where FL2 is a ferromagnetic free layer with intrinsic PMA. In one...
US20140306303 Seed Layer for Perpendicular Magnetic Anisotropy (PMA) Thin Film  
A magnetic thin film deposition having PMA (perpendicular magnetic anisotropy) is a multilayered fabrication of materials having differing crystal symmetries that smoothly transition by use of a...
US20130001719 INTERACTION STRUCTURE FOR A STORAGE MEDIUM  
A process manufactures an interaction structure for a storage medium. The process includes forming a first interaction head provided with a first conductive region having a sub-lithographic...