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US20140103330 ULTRA-SENSITIVE GAS SENSORS BASED ON TELLURIUM-SINGLE WALLED CARBON NANOTUBE HYBRID NANOSTRUCTURES  
A gas sensor operable at ambient conditions, the sensor includes functionalized feather-like tellurium (Te) nanostructures on single-walled carbon nanotube (SWNTs) networks.
US20110168966 DEPOSITION OF AMORPHOUS PHASE CHANGE MATERIAL  
A method for formation of a phase change memory (PCM) cell includes depositing amorphous phase change material in a via hole, the via hole comprising a bottom and a top, such that the amorphous...
US20090321755 NANOCRYSTAL MIXTURE AND LIGHT-EMITTING DIODE USING THE SAME  
Disclosed is a light-emitting device. The light-emitting device comprises a blue light-emitting source and a light-emitting source. The light-emitting source includes first semiconductor...
US20100072465 BARIUM COPPER SULFUR FLUORIDE TRANSPARENT CONDUCTIVE THIN FILMS AND BULK MATERIAL  
The present invention is generally directed to a bulk barium copper sulfur fluoride (BCSF) material made by combining Cu2S, BaS and BaF2, heating the ampoule between 400 and 550 ° C. for at least ...
US20100163822 OVONIC THRESHOLD SWITCH FILM COMPOSITION FOR TSLAGS MATERIAL  
A chalcogenide alloy that optimizes operating parameters of an ovonic threshold switch includes an atomic percentage of arsenic in the range of 9 to 39, an atomic percentage of germanium in the...
US20120168742 BARIUM COPPER SULFUR FLUORIDE TRANSPARENT CONDUCTIVE THIN FILMS AND BULK MATERIAL  
A bulk barium copper sulfur fluoride (BCSF) material can be made by combining Cu2S, BaS and BaF2, heating the ampoule between 400 and 550° C. for at least two hours, and then heating the ampoule ...
US20090321730 COMPOSITIONS OF DOPED, CO-DOPED AND TRI-DOPED SEMICONDUCTOR MATERIALS  
Semiconductor materials suitable for being used in radiation detectors are disclosed. A particular example of the semiconductor materials includes tellurium, cadmium, and zinc. Tellurium is in...
US20090250692 Radiation Detector With Asymmetric Contacts  
A room temperature radiation detector is made from a semi-insulating Cd1-xZnxTe crystal, where 0≦x≦1, having a first electrode made of Pt or Au on one surface of the crystal and a second ele...
US20100090189 Nanoscale electrical device  
A device consists a disordered relaxation insulator or/and a polyamorphous solid between two or more electrodes. Invented devices can perform passive, logic and memory functions in an electronic...
US20110155984 SELF-SELECTING PCM DEVICE NOT REQUIRING A DEDICATED SELECTOR TRANSISTOR  
A Zinc Oxide (ZnO) layer deposited using Atomic Layer Deposition (ALD) over a phase-change material forms a self-selected storage device. The diode formed at the ZnO/GST interface shows both...
US20100002491 RESISTANCE RAM HAVING OXIDE LAYER AND SOLID ELECTROLYTE LAYER, AND METHOD FOR OPERATING THE SAME  
A resistance RAM that is provided with an oxide layer and a solid electrolyte layer, and a method for operating the same are provided. The resistance RAM comprises a first electrode, an oxide layer...
US20070096090 Forming a phase change memory with an ovonic threshold switch  
A phase change memory may include an ovonic threshold switch formed over an ovonic memory. In one embodiment, the switch includes a chalcogenide layer that overlaps an underlying electrode. Then,...
US20110073829 PHASE CHANGE MEMORY DEVICE HAVING A HEATER WITH A TEMPERATURE DEPENDENT RESISTIVITY, METHOD OF MANUFACTURING THE SAME, AND CIRCUIT OF THE SAME  
A phase change memory device having a heater that exhibits a temperature dependent resistivity which provides a way of reducing a reset current is presented. The phase change memory device includes...
US20120146016 Wafer-Scale X-Ray Detector And Method Of Manufacturing The Same  
A wafer-scale x-ray detector and a method of manufacturing the same are provided. The wafer-scale x-ray detector includes: a seamless silicon substrate electrically connected to a printed circuit...
US20100096610 PHASE-CHANGE MATERIAL MEMORY CELL  
A memory cell includes a current-steering device, a phase-change material disposed thereover, and a heating element and/or a cooling element.
US20070298536 Single-crystal metal nanocrystals  
Methods for producing nanocrystals comprising metallic materials utilizing an inverse micelle solvothermal process are disclosed. Nanocrystals comprising well-ordered, single-crystalline germanium...
US20080217610 THIN FILM TRANSISTOR HAVING N-TYPE AND P-TYPE CIS THIN FILMS AND METHOD OF MANUFACTURING THE SAME  
Provided is a thin film transistor (TFT) which uses CIS (CuInSe2), including Se, which is a chalcogen-based material, and can provide a rectifying function, and electric and optical switching...
US20110193045 POST DEPOSITION METHOD FOR REGROWTH OF CRYSTALLINE PHASE CHANGE MATERIAL  
Techniques for forming a phase change memory cell. An example method includes forming a bottom electrode within a substrate. The method includes forming a phase change layer above the bottom...
US20090250691 PHASE CHANGE MEMORY ELEMENT AND METHOD FOR FORMING THE SAME  
A phase change memory and method for fabricating the same are provided. The phase change memory element includes: a substrate; rectangle-shaped dielectric patterns formed on the substrate and...
US20110180775 PROGRAMMABLE METALLIZATION CELL WITH ION BUFFER LAYER  
A programmable metallization device, comprises a first electrode; a memory layer electrically coupled to the first electrode and adapted for electrolytic formation and destruction of a conducting...
US20100090213 ONE-TIME PROGRAMMABLE DEVICES INCLUDING CHALCOGENIDE MATERIAL AND ELECTRONIC SYSTEMS INCLUDING THE SAME  
A method of programming a one-time programmable device is provided. A switching device disposed in a substrate is turned on and a program current is applied to a fuse electrically connected to the...
US20100084625 Memory Device  
An electrical device includes a first electrode and a second electrode. A first active material is between the first electrode and second electrode. A second active material is between the first...
US20090194764 Multi-layer storage node, resistive random access memory device including a multi-layer storage node and methods of manufacturing the same  
A multi-layer storage node, resistive random access memory device and methods of manufacturing the same are provided. The resistive random access memory device includes a switching structure and a...
US20090057661 Method for Chemical Mechanical Planarization of Chalcogenide Materials  
A method and associated composition for chemical mechanical planarization of a chalcogenide-containing substrate (e.g., germanium/antimony/tellurium (GST)-containing substrate) are described. The...
US20090242868 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME  
A solid electrolyte memory involves a problem that stable rewriting is difficult since the amount of ions in the solid electrolyte and the shape of the electrode are changed by repeating rewriting....
US20110127485 KEYHOLE-FREE SLOPED HEATER FOR PHASE CHANGE MEMORY  
Subject matter disclosed herein relates to a method of manufacturing a semiconductor integrated circuit device, and more particularly to a method of fabricating a phase change memory device.
US20090242880 THERMALLY STABILIZED ELECTRODE STRUCTURE  
Memory devices and methods for manufacturing are described herein. A memory device as described herein includes a first electrode layer, a second electrode layer, and a thermal isolation structure...
US20090146141 METHOD FOR MANUFACTURING N-TYPE AND P-TYPE CHALCOGENIDE MATERIAL, DOPED HOMOJUNCTION CHALCOGENIDE THIN FILM TRANSISTOR AND METHOD OF FABRICATING THE SAME  
The present invention provides a doped homojunction chalcogenide thin film transistor and a method of fabricating the same, comprising forming an N-type chalcogenide layer constituting a channel...
US20110163305 RADIATION DETECTOR  
An X-ray detector 1 includes: an X-ray conversion layer 17 which is made of amorphous selenium and absorbs incident radiation and generates charges; a common electrode 23 provided on a surface on...
US20100327249 PHASE CHANGE MEMORY DEVICE HAVING AN IMPROVED WORD LINE RESISTANCE, AND METHODS OF MAKING SAME  
A phase change memory device having an improved word line resistance and a fabrication method of making the same are presented. The phase change memory device includes a semiconductor substrate, a...
US20100176365 RESISTANCE VARIABLE MEMORY DEVICES AND METHODS OF FABRICATING THE SAME  
A resistance variable memory device includes at least one bottom electrode, a first insulating layer containing a trench which exposes the at least one bottom electrode, and a resistance variable...
US20060197082 Transistor including physical property-changing layer, method of operating transistor, and method of manufacturing transistor  
A transistor using a physical property-changing layer, a method of operating the transistor, and a method of manufacturing the transistor are provided. The transistor may include an insulation...
US20110315978 RADIATION DETECTOR, AND A RADIOGRAPHIC APPARATUS HAVING THE SAME  
The construction of this invention includes an active matrix substrate, an amorphous selenium layer, a high resistance layer, a gold electrode layer, an insulating layer and an auxiliary plate...
US20100193780 METHOD OF FORMING MEMORY CELL USING GAS CLUSTER ION BEAMS  
A variable resistance memory cell structure and a method of forming it. The method includes forming a first electrode, forming an insulating material over the first electrode, forming a via in the...
US20100327276 Method and system for passivation of defects in mercury cadmium telluride based optoelectric devices  
Apparatus and method to improve the operating parameters of HgCdTe-based optoelectric devices by the addition of hydrogen to passivate dislocation defects. A chamber and a UV light source are...
US20100213431 Treated Chalcogenide Layer for Semiconductor Devices  
A phase change memory and a method of manufacture are provided. The phase change memory includes a layer of phase change material treated to increase the hydrophobic nature of the phase change...
US20100181548 SOLID-STATE MEMORY AND SEMICONDUCTOR DEVICE  
A solid memory may include a recording layer including Ge, Sb and Te as major components. The recording layer may include a superlattice. The recording layer may include multi-layers each having a...
US20100135060 MEMORY DEVICE AND STORAGE APPARATUS  
A memory device 10 has an arrangement in which a memory thin film 4 is sandwiched between first and second electrodes 2 and 6, the memory thin film 6 contains at least rare earth elements, the...
US20100133494 USE OF LACUNAR SPINELS WITH TETRAHEDRAL AGGREGATES OF A TRANSITION ELEMENT OF THE AM4X8 TYPE WITH AN ELECTRONIC DATA REWRITABLE NON VOLATILE MEMORY, AND CORRESPONDING MATERIAL  
The invention relates to the use of a material that belongs to the class of lacunar spinels with tetrahedral aggregates of an AM4X8 transition element as the active material for an electronic data...
US20100102306 MULTI-LEVEL MEMORY CELL AND MANUFACTURING METHOD THEREOF  
A multi-level memory cell having a bottom electrode, a first dielectric layer, a plurality of memory material layers, a plurality of second dielectric layers, and an upper electrode is provided....
US20090134388 SEMICONDUCTOR DEVICE AND FABRICATION METHOD OF SAME  
A semiconductor device having a metal insulator semiconductor field effect transistor (MISFET) with interface resistance-reduced source/drain electrodes is disclosed. This device includes a p-type...
US20080251779 APPARATUS OF MEMORY ARRAY USING FINFETS  
A memory cell includes a FinFET select device and a memory element. In some embodiments a memory cell has a contact element coupled between a surface of the fin and the memory element.
US20130099226 PHOTOELECTRIC CONVERSION DEVICE  
It is aimed to provide a photoelectric conversion device having high adhesion between a first semiconductor layer and an electrode layer as well as high photoelectric conversion efficiency. A...
US20110214736 PHOTODIODE, IMAGE SENSOR AND SOLAR CELL  
A photodiode includes a p-type semiconductor material and an n-type chalcogenide compound. The p-type semiconductor material and the n-type chalcogenide compound form a pn-junction.
US20110163306 RADIATION DETECTOR  
A radiation detector of this invention has a curable synthetic resin film covering exposed surfaces of a radiation sensitive semiconductor layer, a carrier selective high resistance film and a...
US20110079278 Method of Manufacturing a Photovoltaic Compound Semiconductor Printing Solution to Produce Solar Cells  
A photovoltaic semiconductor solution comprising at least an equimolar mixture of cadmium, tellurium, gallium and indium; propylene glycol flux; carbon; resin in an organic solvent; strontium...
US20110012081 SEMICONDUCTOR MEMORY DEVICE  
A semiconductor memory device includes a first conductive line, a second conductive line crossing over the first conductive line, a resistance variation part disposed at a position in which the...
US20110001112 NONVOLATILE MEMORY DEVICE AND MANUFACTURING METHOD THEREOF  
A nonvolatile memory device according to an embodiment of the present invention includes a first wire that extends in a first direction, a second wire that is formed at a height different from the...
US20100327277 SEMICONDUCTOR DEVICE WITH A BULK SINGLE CRYSTAL ON A SUBSTRATE  
Device and method of forming a device in which a substrate (10) is fabricated with at least part of an electronic circuit for processing signals. A bulk single crystal material (14) is formed on...
US20100327252 PHASE CHANGE MEMORY APPARATUS AND FABRICATION METHOD THEREOF  
A phase change memory apparatus is provided that includes a first electrode of a bar type having a trench formed on an active region of a semiconductor substrate, a second electrode formed in a...
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