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US20110168966 |
DEPOSITION OF AMORPHOUS PHASE CHANGE MATERIAL
A method for formation of a phase change memory (PCM) cell includes depositing amorphous phase change material in a via hole, the via hole comprising a bottom and a top, such that the amorphous...
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US20090321755 |
NANOCRYSTAL MIXTURE AND LIGHT-EMITTING DIODE USING THE SAME
Disclosed is a light-emitting device. The light-emitting device comprises a blue light-emitting source and a light-emitting source. The light-emitting source includes first semiconductor...
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US20100072465 |
BARIUM COPPER SULFUR FLUORIDE TRANSPARENT CONDUCTIVE THIN FILMS AND BULK MATERIAL
The present invention is generally directed to a bulk barium copper sulfur fluoride (BCSF) material made by combining Cu2S, BaS and BaF2, heating the ampoule between 400 and 550 ° C. for at least ...
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US20100163822 |
OVONIC THRESHOLD SWITCH FILM COMPOSITION FOR TSLAGS MATERIAL
A chalcogenide alloy that optimizes operating parameters of an ovonic threshold switch includes an atomic percentage of arsenic in the range of 9 to 39, an atomic percentage of germanium in the...
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US20120168742 |
BARIUM COPPER SULFUR FLUORIDE TRANSPARENT CONDUCTIVE THIN FILMS AND BULK MATERIAL
A bulk barium copper sulfur fluoride (BCSF) material can be made by combining Cu2S, BaS and BaF2, heating the ampoule between 400 and 550° C. for at least two hours, and then heating the ampoule ...
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US20090321730 |
COMPOSITIONS OF DOPED, CO-DOPED AND TRI-DOPED SEMICONDUCTOR MATERIALS
Semiconductor materials suitable for being used in radiation detectors are disclosed. A particular example of the semiconductor materials includes tellurium, cadmium, and zinc. Tellurium is in...
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US20090250692 |
Radiation Detector With Asymmetric Contacts
A room temperature radiation detector is made from a semi-insulating Cd1-xZnxTe crystal, where 0≦x≦1, having a first electrode made of Pt or Au on one surface of the crystal and a second ele...
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US20100090189 |
Nanoscale electrical device
A device consists a disordered relaxation insulator or/and a polyamorphous solid between two or more electrodes. Invented devices can perform passive, logic and memory functions in an electronic...
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US20110155984 |
SELF-SELECTING PCM DEVICE NOT REQUIRING A DEDICATED SELECTOR TRANSISTOR
A Zinc Oxide (ZnO) layer deposited using Atomic Layer Deposition (ALD) over a phase-change material forms a self-selected storage device. The diode formed at the ZnO/GST interface shows both...
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US20100002491 |
RESISTANCE RAM HAVING OXIDE LAYER AND SOLID ELECTROLYTE LAYER, AND METHOD FOR OPERATING THE SAME
A resistance RAM that is provided with an oxide layer and a solid electrolyte layer, and a method for operating the same are provided. The resistance RAM comprises a first electrode, an oxide layer...
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US20070096090 |
Forming a phase change memory with an ovonic threshold switch
A phase change memory may include an ovonic threshold switch formed over an ovonic memory. In one embodiment, the switch includes a chalcogenide layer that overlaps an underlying electrode. Then,...
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US20110073829 |
PHASE CHANGE MEMORY DEVICE HAVING A HEATER WITH A TEMPERATURE DEPENDENT RESISTIVITY, METHOD OF MANUFACTURING THE SAME, AND CIRCUIT OF THE SAME
A phase change memory device having a heater that exhibits a temperature dependent resistivity which provides a way of reducing a reset current is presented. The phase change memory device includes...
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US20120146016 |
Wafer-Scale X-Ray Detector And Method Of Manufacturing The Same
A wafer-scale x-ray detector and a method of manufacturing the same are provided. The wafer-scale x-ray detector includes: a seamless silicon substrate electrically connected to a printed circuit...
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US20100096610 |
PHASE-CHANGE MATERIAL MEMORY CELL
A memory cell includes a current-steering device, a phase-change material disposed thereover, and a heating element and/or a cooling element.
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US20070298536 |
Single-crystal metal nanocrystals
Methods for producing nanocrystals comprising metallic materials utilizing an inverse micelle solvothermal process are disclosed. Nanocrystals comprising well-ordered, single-crystalline germanium...
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US20080217610 |
THIN FILM TRANSISTOR HAVING N-TYPE AND P-TYPE CIS THIN FILMS AND METHOD OF MANUFACTURING THE SAME
Provided is a thin film transistor (TFT) which uses CIS (CuInSe2), including Se, which is a chalcogen-based material, and can provide a rectifying function, and electric and optical switching...
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US20110193045 |
POST DEPOSITION METHOD FOR REGROWTH OF CRYSTALLINE PHASE CHANGE MATERIAL
Techniques for forming a phase change memory cell. An example method includes forming a bottom electrode within a substrate. The method includes forming a phase change layer above the bottom...
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US20090250691 |
PHASE CHANGE MEMORY ELEMENT AND METHOD FOR FORMING THE SAME
A phase change memory and method for fabricating the same are provided. The phase change memory element includes: a substrate; rectangle-shaped dielectric patterns formed on the substrate and...
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US20110180775 |
PROGRAMMABLE METALLIZATION CELL WITH ION BUFFER LAYER
A programmable metallization device, comprises a first electrode; a memory layer electrically coupled to the first electrode and adapted for electrolytic formation and destruction of a conducting...
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US20100090213 |
ONE-TIME PROGRAMMABLE DEVICES INCLUDING CHALCOGENIDE MATERIAL AND ELECTRONIC SYSTEMS INCLUDING THE SAME
A method of programming a one-time programmable device is provided. A switching device disposed in a substrate is turned on and a program current is applied to a fuse electrically connected to the...
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US20100084625 |
Memory Device
An electrical device includes a first electrode and a second electrode. A first active material is between the first electrode and second electrode. A second active material is between the first...
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US20090194764 |
Multi-layer storage node, resistive random access memory device including a multi-layer storage node and methods of manufacturing the same
A multi-layer storage node, resistive random access memory device and methods of manufacturing the same are provided. The resistive random access memory device includes a switching structure and a...
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US20090057661 |
Method for Chemical Mechanical Planarization of Chalcogenide Materials
A method and associated composition for chemical mechanical planarization of a chalcogenide-containing substrate (e.g., germanium/antimony/tellurium (GST)-containing substrate) are described. The...
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US20090242868 |
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
A solid electrolyte memory involves a problem that stable rewriting is difficult since the amount of ions in the solid electrolyte and the shape of the electrode are changed by repeating rewriting....
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US20110127485 |
KEYHOLE-FREE SLOPED HEATER FOR PHASE CHANGE MEMORY
Subject matter disclosed herein relates to a method of manufacturing a semiconductor integrated circuit device, and more particularly to a method of fabricating a phase change memory device.
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US20090242880 |
THERMALLY STABILIZED ELECTRODE STRUCTURE
Memory devices and methods for manufacturing are described herein. A memory device as described herein includes a first electrode layer, a second electrode layer, and a thermal isolation structure...
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US20090146141 |
METHOD FOR MANUFACTURING N-TYPE AND P-TYPE CHALCOGENIDE MATERIAL, DOPED HOMOJUNCTION CHALCOGENIDE THIN FILM TRANSISTOR AND METHOD OF FABRICATING THE SAME
The present invention provides a doped homojunction chalcogenide thin film transistor and a method of fabricating the same, comprising forming an N-type chalcogenide layer constituting a channel...
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US20110163305 |
RADIATION DETECTOR
An X-ray detector 1 includes: an X-ray conversion layer 17 which is made of amorphous selenium and absorbs incident radiation and generates charges; a common electrode 23 provided on a surface on...
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US20100327249 |
PHASE CHANGE MEMORY DEVICE HAVING AN IMPROVED WORD LINE RESISTANCE, AND METHODS OF MAKING SAME
A phase change memory device having an improved word line resistance and a fabrication method of making the same are presented. The phase change memory device includes a semiconductor substrate, a...
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US20100176365 |
RESISTANCE VARIABLE MEMORY DEVICES AND METHODS OF FABRICATING THE SAME
A resistance variable memory device includes at least one bottom electrode, a first insulating layer containing a trench which exposes the at least one bottom electrode, and a resistance variable...
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US20060197082 |
Transistor including physical property-changing layer, method of operating transistor, and method of manufacturing transistor
A transistor using a physical property-changing layer, a method of operating the transistor, and a method of manufacturing the transistor are provided. The transistor may include an insulation...
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US20110315978 |
RADIATION DETECTOR, AND A RADIOGRAPHIC APPARATUS HAVING THE SAME
The construction of this invention includes an active matrix substrate, an amorphous selenium layer, a high resistance layer, a gold electrode layer, an insulating layer and an auxiliary plate...
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US20100193780 |
METHOD OF FORMING MEMORY CELL USING GAS CLUSTER ION BEAMS
A variable resistance memory cell structure and a method of forming it. The method includes forming a first electrode, forming an insulating material over the first electrode, forming a via in the...
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US20100327276 |
Method and system for passivation of defects in mercury cadmium telluride based optoelectric devices
Apparatus and method to improve the operating parameters of HgCdTe-based optoelectric devices by the addition of hydrogen to passivate dislocation defects. A chamber and a UV light source are...
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US20100213431 |
Treated Chalcogenide Layer for Semiconductor Devices
A phase change memory and a method of manufacture are provided. The phase change memory includes a layer of phase change material treated to increase the hydrophobic nature of the phase change...
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US20100181548 |
SOLID-STATE MEMORY AND SEMICONDUCTOR DEVICE
A solid memory may include a recording layer including Ge, Sb and Te as major components. The recording layer may include a superlattice. The recording layer may include multi-layers each having a...
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US20100135060 |
MEMORY DEVICE AND STORAGE APPARATUS
A memory device 10 has an arrangement in which a memory thin film 4 is sandwiched between first and second electrodes 2 and 6, the memory thin film 6 contains at least rare earth elements, the...
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US20100133494 |
USE OF LACUNAR SPINELS WITH TETRAHEDRAL AGGREGATES OF A TRANSITION ELEMENT OF THE AM4X8 TYPE WITH AN ELECTRONIC DATA REWRITABLE NON VOLATILE MEMORY, AND CORRESPONDING MATERIAL
The invention relates to the use of a material that belongs to the class of lacunar spinels with tetrahedral aggregates of an AM4X8 transition element as the active material for an electronic data...
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US20100102306 |
MULTI-LEVEL MEMORY CELL AND MANUFACTURING METHOD THEREOF
A multi-level memory cell having a bottom electrode, a first dielectric layer, a plurality of memory material layers, a plurality of second dielectric layers, and an upper electrode is provided....
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US20090134388 |
SEMICONDUCTOR DEVICE AND FABRICATION METHOD OF SAME
A semiconductor device having a metal insulator semiconductor field effect transistor (MISFET) with interface resistance-reduced source/drain electrodes is disclosed. This device includes a p-type...
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US20080251779 |
APPARATUS OF MEMORY ARRAY USING FINFETS
A memory cell includes a FinFET select device and a memory element. In some embodiments a memory cell has a contact element coupled between a surface of the fin and the memory element.
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US20130099226 |
PHOTOELECTRIC CONVERSION DEVICE
It is aimed to provide a photoelectric conversion device having high adhesion between a first semiconductor layer and an electrode layer as well as high photoelectric conversion efficiency. A...
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US20110214736 |
PHOTODIODE, IMAGE SENSOR AND SOLAR CELL
A photodiode includes a p-type semiconductor material and an n-type chalcogenide compound. The p-type semiconductor material and the n-type chalcogenide compound form a pn-junction.
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US20110163306 |
RADIATION DETECTOR
A radiation detector of this invention has a curable synthetic resin film covering exposed surfaces of a radiation sensitive semiconductor layer, a carrier selective high resistance film and a...
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US20110079278 |
Method of Manufacturing a Photovoltaic Compound Semiconductor Printing Solution to Produce Solar Cells
A photovoltaic semiconductor solution comprising at least an equimolar mixture of cadmium, tellurium, gallium and indium; propylene glycol flux; carbon; resin in an organic solvent; strontium...
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US20110012081 |
SEMICONDUCTOR MEMORY DEVICE
A semiconductor memory device includes a first conductive line, a second conductive line crossing over the first conductive line, a resistance variation part disposed at a position in which the...
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US20110001112 |
NONVOLATILE MEMORY DEVICE AND MANUFACTURING METHOD THEREOF
A nonvolatile memory device according to an embodiment of the present invention includes a first wire that extends in a first direction, a second wire that is formed at a height different from the...
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US20100327277 |
SEMICONDUCTOR DEVICE WITH A BULK SINGLE CRYSTAL ON A SUBSTRATE
Device and method of forming a device in which a substrate (10) is fabricated with at least part of an electronic circuit for processing signals. A bulk single crystal material (14) is formed on...
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US20100327252 |
PHASE CHANGE MEMORY APPARATUS AND FABRICATION METHOD THEREOF
A phase change memory apparatus is provided that includes a first electrode of a bar type having a trench formed on an active region of a semiconductor substrate, a second electrode formed in a...
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US20100327250 |
PHASE CHANGE MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME
A phase change memory device having a strain transistor and a method of making the same are presented. The phase change memory device includes a semiconductor substrate, a junction word line,...
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