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US20140103330 ULTRA-SENSITIVE GAS SENSORS BASED ON TELLURIUM-SINGLE WALLED CARBON NANOTUBE HYBRID NANOSTRUCTURES  
A gas sensor operable at ambient conditions, the sensor includes functionalized feather-like tellurium (Te) nanostructures on single-walled carbon nanotube (SWNTs) networks.
US20110168966 DEPOSITION OF AMORPHOUS PHASE CHANGE MATERIAL  
A method for formation of a phase change memory (PCM) cell includes depositing amorphous phase change material in a via hole, the via hole comprising a bottom and a top, such that the amorphous...
US20090321755 NANOCRYSTAL MIXTURE AND LIGHT-EMITTING DIODE USING THE SAME  
Disclosed is a light-emitting device. The light-emitting device comprises a blue light-emitting source and a light-emitting source. The light-emitting source includes first semiconductor...
US20100072465 BARIUM COPPER SULFUR FLUORIDE TRANSPARENT CONDUCTIVE THIN FILMS AND BULK MATERIAL  
The present invention is generally directed to a bulk barium copper sulfur fluoride (BCSF) material made by combining Cu2S, BaS and BaF2, heating the ampoule between 400 and 550 ° C. for at least ...
US20100163822 OVONIC THRESHOLD SWITCH FILM COMPOSITION FOR TSLAGS MATERIAL  
A chalcogenide alloy that optimizes operating parameters of an ovonic threshold switch includes an atomic percentage of arsenic in the range of 9 to 39, an atomic percentage of germanium in the...
US20120168742 BARIUM COPPER SULFUR FLUORIDE TRANSPARENT CONDUCTIVE THIN FILMS AND BULK MATERIAL  
A bulk barium copper sulfur fluoride (BCSF) material can be made by combining Cu2S, BaS and BaF2, heating the ampoule between 400 and 550° C. for at least two hours, and then heating the ampoule ...
US20090321730 COMPOSITIONS OF DOPED, CO-DOPED AND TRI-DOPED SEMICONDUCTOR MATERIALS  
Semiconductor materials suitable for being used in radiation detectors are disclosed. A particular example of the semiconductor materials includes tellurium, cadmium, and zinc. Tellurium is in...
US20090250692 Radiation Detector With Asymmetric Contacts  
A room temperature radiation detector is made from a semi-insulating Cd1-xZnxTe crystal, where 0≦x≦1, having a first electrode made of Pt or Au on one surface of the crystal and a second ele...
US20100090189 Nanoscale electrical device  
A device consists a disordered relaxation insulator or/and a polyamorphous solid between two or more electrodes. Invented devices can perform passive, logic and memory functions in an electronic...
US20110155984 SELF-SELECTING PCM DEVICE NOT REQUIRING A DEDICATED SELECTOR TRANSISTOR  
A Zinc Oxide (ZnO) layer deposited using Atomic Layer Deposition (ALD) over a phase-change material forms a self-selected storage device. The diode formed at the ZnO/GST interface shows both...
US20100002491 RESISTANCE RAM HAVING OXIDE LAYER AND SOLID ELECTROLYTE LAYER, AND METHOD FOR OPERATING THE SAME  
A resistance RAM that is provided with an oxide layer and a solid electrolyte layer, and a method for operating the same are provided. The resistance RAM comprises a first electrode, an oxide layer...
US20070096090 Forming a phase change memory with an ovonic threshold switch  
A phase change memory may include an ovonic threshold switch formed over an ovonic memory. In one embodiment, the switch includes a chalcogenide layer that overlaps an underlying electrode. Then,...
US20110073829 PHASE CHANGE MEMORY DEVICE HAVING A HEATER WITH A TEMPERATURE DEPENDENT RESISTIVITY, METHOD OF MANUFACTURING THE SAME, AND CIRCUIT OF THE SAME  
A phase change memory device having a heater that exhibits a temperature dependent resistivity which provides a way of reducing a reset current is presented. The phase change memory device includes...
US20120146016 Wafer-Scale X-Ray Detector And Method Of Manufacturing The Same  
A wafer-scale x-ray detector and a method of manufacturing the same are provided. The wafer-scale x-ray detector includes: a seamless silicon substrate electrically connected to a printed circuit...
US20100096610 PHASE-CHANGE MATERIAL MEMORY CELL  
A memory cell includes a current-steering device, a phase-change material disposed thereover, and a heating element and/or a cooling element.
US20070298536 Single-crystal metal nanocrystals  
Methods for producing nanocrystals comprising metallic materials utilizing an inverse micelle solvothermal process are disclosed. Nanocrystals comprising well-ordered, single-crystalline germanium...
US20080217610 THIN FILM TRANSISTOR HAVING N-TYPE AND P-TYPE CIS THIN FILMS AND METHOD OF MANUFACTURING THE SAME  
Provided is a thin film transistor (TFT) which uses CIS (CuInSe2), including Se, which is a chalcogen-based material, and can provide a rectifying function, and electric and optical switching...
US20110193045 POST DEPOSITION METHOD FOR REGROWTH OF CRYSTALLINE PHASE CHANGE MATERIAL  
Techniques for forming a phase change memory cell. An example method includes forming a bottom electrode within a substrate. The method includes forming a phase change layer above the bottom...
US20090250691 PHASE CHANGE MEMORY ELEMENT AND METHOD FOR FORMING THE SAME  
A phase change memory and method for fabricating the same are provided. The phase change memory element includes: a substrate; rectangle-shaped dielectric patterns formed on the substrate and...
US20110180775 PROGRAMMABLE METALLIZATION CELL WITH ION BUFFER LAYER  
A programmable metallization device, comprises a first electrode; a memory layer electrically coupled to the first electrode and adapted for electrolytic formation and destruction of a conducting...
US20100090213 ONE-TIME PROGRAMMABLE DEVICES INCLUDING CHALCOGENIDE MATERIAL AND ELECTRONIC SYSTEMS INCLUDING THE SAME  
A method of programming a one-time programmable device is provided. A switching device disposed in a substrate is turned on and a program current is applied to a fuse electrically connected to the...
US20100084625 Memory Device  
An electrical device includes a first electrode and a second electrode. A first active material is between the first electrode and second electrode. A second active material is between the first...
US20090194764 Multi-layer storage node, resistive random access memory device including a multi-layer storage node and methods of manufacturing the same  
A multi-layer storage node, resistive random access memory device and methods of manufacturing the same are provided. The resistive random access memory device includes a switching structure and a...
US20090057661 Method for Chemical Mechanical Planarization of Chalcogenide Materials  
A method and associated composition for chemical mechanical planarization of a chalcogenide-containing substrate (e.g., germanium/antimony/tellurium (GST)-containing substrate) are described. The...
US20090242868 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME  
A solid electrolyte memory involves a problem that stable rewriting is difficult since the amount of ions in the solid electrolyte and the shape of the electrode are changed by repeating rewriting....
US20110127485 KEYHOLE-FREE SLOPED HEATER FOR PHASE CHANGE MEMORY  
Subject matter disclosed herein relates to a method of manufacturing a semiconductor integrated circuit device, and more particularly to a method of fabricating a phase change memory device.
US20090242880 THERMALLY STABILIZED ELECTRODE STRUCTURE  
Memory devices and methods for manufacturing are described herein. A memory device as described herein includes a first electrode layer, a second electrode layer, and a thermal isolation structure...
US20090146141 METHOD FOR MANUFACTURING N-TYPE AND P-TYPE CHALCOGENIDE MATERIAL, DOPED HOMOJUNCTION CHALCOGENIDE THIN FILM TRANSISTOR AND METHOD OF FABRICATING THE SAME  
The present invention provides a doped homojunction chalcogenide thin film transistor and a method of fabricating the same, comprising forming an N-type chalcogenide layer constituting a channel...
US20110163305 RADIATION DETECTOR  
An X-ray detector 1 includes: an X-ray conversion layer 17 which is made of amorphous selenium and absorbs incident radiation and generates charges; a common electrode 23 provided on a surface on...
US20100327249 PHASE CHANGE MEMORY DEVICE HAVING AN IMPROVED WORD LINE RESISTANCE, AND METHODS OF MAKING SAME  
A phase change memory device having an improved word line resistance and a fabrication method of making the same are presented. The phase change memory device includes a semiconductor substrate, a...
US20100176365 RESISTANCE VARIABLE MEMORY DEVICES AND METHODS OF FABRICATING THE SAME  
A resistance variable memory device includes at least one bottom electrode, a first insulating layer containing a trench which exposes the at least one bottom electrode, and a resistance variable...
US20060197082 Transistor including physical property-changing layer, method of operating transistor, and method of manufacturing transistor  
A transistor using a physical property-changing layer, a method of operating the transistor, and a method of manufacturing the transistor are provided. The transistor may include an insulation...
US20110315978 RADIATION DETECTOR, AND A RADIOGRAPHIC APPARATUS HAVING THE SAME  
The construction of this invention includes an active matrix substrate, an amorphous selenium layer, a high resistance layer, a gold electrode layer, an insulating layer and an auxiliary plate...
US20100193780 METHOD OF FORMING MEMORY CELL USING GAS CLUSTER ION BEAMS  
A variable resistance memory cell structure and a method of forming it. The method includes forming a first electrode, forming an insulating material over the first electrode, forming a via in the...
US20140131698 CHANNEL LAYER AND THIN FILM TRANSISTOR INCLUDING THE SAME  
A channel layer may include a plurality of transition metal dichalcogenide (TMD) material layers and an insulator layer between a pair of the plurality of TMD material layers.
US20100327276 Method and system for passivation of defects in mercury cadmium telluride based optoelectric devices  
Apparatus and method to improve the operating parameters of HgCdTe-based optoelectric devices by the addition of hydrogen to passivate dislocation defects. A chamber and a UV light source are...
US20100213431 Treated Chalcogenide Layer for Semiconductor Devices  
A phase change memory and a method of manufacture are provided. The phase change memory includes a layer of phase change material treated to increase the hydrophobic nature of the phase change...
US20100181548 SOLID-STATE MEMORY AND SEMICONDUCTOR DEVICE  
A solid memory may include a recording layer including Ge, Sb and Te as major components. The recording layer may include a superlattice. The recording layer may include multi-layers each having a...
US20100135060 MEMORY DEVICE AND STORAGE APPARATUS  
A memory device 10 has an arrangement in which a memory thin film 4 is sandwiched between first and second electrodes 2 and 6, the memory thin film 6 contains at least rare earth elements, the...
US20100133494 USE OF LACUNAR SPINELS WITH TETRAHEDRAL AGGREGATES OF A TRANSITION ELEMENT OF THE AM4X8 TYPE WITH AN ELECTRONIC DATA REWRITABLE NON VOLATILE MEMORY, AND CORRESPONDING MATERIAL  
The invention relates to the use of a material that belongs to the class of lacunar spinels with tetrahedral aggregates of an AM4X8 transition element as the active material for an electronic data...
US20100102306 MULTI-LEVEL MEMORY CELL AND MANUFACTURING METHOD THEREOF  
A multi-level memory cell having a bottom electrode, a first dielectric layer, a plurality of memory material layers, a plurality of second dielectric layers, and an upper electrode is provided....
US20090134388 SEMICONDUCTOR DEVICE AND FABRICATION METHOD OF SAME  
A semiconductor device having a metal insulator semiconductor field effect transistor (MISFET) with interface resistance-reduced source/drain electrodes is disclosed. This device includes a p-type...
US20080251779 APPARATUS OF MEMORY ARRAY USING FINFETS  
A memory cell includes a FinFET select device and a memory element. In some embodiments a memory cell has a contact element coupled between a surface of the fin and the memory element.
US20140167030 VERTICAL TYPE SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF  
A vertical memory device and a method of fabricating the same are provided. The vertical type semiconductor device includes a common source region formed in a cell area of a semiconductor...
US20130099226 PHOTOELECTRIC CONVERSION DEVICE  
It is aimed to provide a photoelectric conversion device having high adhesion between a first semiconductor layer and an electrode layer as well as high photoelectric conversion efficiency. A...
US20110214736 PHOTODIODE, IMAGE SENSOR AND SOLAR CELL  
A photodiode includes a p-type semiconductor material and an n-type chalcogenide compound. The p-type semiconductor material and the n-type chalcogenide compound form a pn-junction.
US20110163306 RADIATION DETECTOR  
A radiation detector of this invention has a curable synthetic resin film covering exposed surfaces of a radiation sensitive semiconductor layer, a carrier selective high resistance film and a...
US20110079278 Method of Manufacturing a Photovoltaic Compound Semiconductor Printing Solution to Produce Solar Cells  
A photovoltaic semiconductor solution comprising at least an equimolar mixture of cadmium, tellurium, gallium and indium; propylene glycol flux; carbon; resin in an organic solvent; strontium...
US20110012081 SEMICONDUCTOR MEMORY DEVICE  
A semiconductor memory device includes a first conductive line, a second conductive line crossing over the first conductive line, a resistance variation part disposed at a position in which the...
US20110001112 NONVOLATILE MEMORY DEVICE AND MANUFACTURING METHOD THEREOF  
A nonvolatile memory device according to an embodiment of the present invention includes a first wire that extends in a first direction, a second wire that is formed at a height different from the...
Matches 1 - 50 out of 54 1 2 >