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US20140117466 REPLACEMENT GATE ELECTRODE WITH MULTI-THICKNESS CONDUCTIVE METALLIC NITRIDE LAYERS  
Gate electrodes having different work functions can be provided by providing conductive metallic nitride layers having different thicknesses in a replacement gate scheme. Upon removal of...
US20120292720 METAL GATE STRUCTURE AND MANUFACTURING METHOD THEREOF  
A metal gate structure includes a high dielectric constant (high-K) gate dielectric layer, a metal gate having at least a U-shaped work function metal layer positioned on the high-K gate...
US20130221451 MOS TRANSISTORS INCLUDING SiON GATE DIELECTRIC WITH ENHANCED NITROGEN CONCENTRATION AT ITS SIDEWALLS  
A method of forming an integrated circuit (IC) having at least one MOS device includes forming a SiON gate dielectric layer on a silicon surface. A gate electrode layer is deposited on the SiON...
US20120032280 MOS TRANSISTORS INCLUDING SiON GATE DIELECTRIC WITH ENHANCED NITROGEN CONCENTRATION AT ITS SIDEWALLS  
A method of forming an integrated circuit (IC) having at least one MOS device includes forming a SiON gate dielectric layer on a silicon surface. A gate electrode layer is deposited on the SiON...
US20140042560 MULTI-LAYER GATE DIELECTRIC  
A transistor gate dielectric including a first dielectric material having a first dielectric constant and a second dielectric material having a second dielectric constant different from the first...
US20110089502 MULTI-LAYER GATE DIELECTRIC  
A transistor gate dielectric including a first dielectric material having a first dielectric constant and a second dielectric material having a second dielectric constant different from the first...
US20120091542 METHODS FOR THE DEPOSITION OF TERNARY OXIDE GATE DIELECTRICS AND STRUCTURES FORMED THEREBY  
Methods and associated structures of forming a microelectronic device are described. Those methods may include introducing a first metal source, a second metal source and an oxygen source into a...
US20130009257 REPLACEMENT METAL GATE WITH A CONDUCTIVE METAL OXYNITRIDE LAYER  
A disposable gate structure and a gate spacer are formed on a semiconductor substrate. A disposable gate material portion is removed and a high dielectric constant (high-k) gate dielectric layer...
US20120153400 TUNNELING TRANSISTORS  
A transistor including a source; a drain; a gate region, the gate region including a gate; an island; and a gate oxide, wherein the gate oxide is positioned between the gate and the island; and...
US20150108589 EMBEDDED INTERLEVEL DIELECTRIC BARRIER LAYERS FOR REPLACEMENT METAL GATE FIELD EFFECT TRANSISTORS  
A semiconductor structure may be formed by forming a sacrificial gate above a substrate covered by a hard mask, depositing a first interlevel dielectric (ILD) layer above the sacrificial gate,...
US20050040479 Oxide-Nitride-Oxide spacer with oxide layers free of nitridization  
A spacer (2) for a MOSFET is provided with an Oxide-Nitride-Oxide structure. The nitride layer (18) has a structure formed through a process that isolates first oxide layer (16) from ammonium...
US20120153373 GATE STRUCTURE  
A gate structure is described, including a dielectric layer, a gate conductive layer and a stacked cap structure. The dielectric layer is disposed between a substrate and the gate conductive...
US20070158765 Gallium lanthanide oxide films  
Electronic apparatus and methods of forming the electronic apparatus include a gallium lanthanide oxide film for use in a variety of electronic systems. The gallium lanthanide oxide film may be...
US20140374843 REPLACEMENT METAL GATE TRANSISTOR  
A replacement metal gate transistor is described. Various examples provide a replacement metal gate transistor including a trench, a first sidewall and a second sidewall. A layer is disposed in...
US20120313186 POLYSILICON GATE WITH NITROGEN DOPED HIGH-K DIELECTRIC AND SILICON DIOXIDE  
A polysilicon gate structure includes a substrate, a silicon dioxide layer disposed over the substrate, a nitrogen-doped high-k dielectric layer disposed over the silicon dioxide layer, and a...
US20120018817 METHOD FOR FABRICATING A GATE STRUCTURE  
An method of fabricating the gate structure comprises: sequentially depositing and patterning a dummy oxide layer and a dummy gate electrode layer on a substrate; surrounding the dummy oxide layer...
US20130187243 METHOD, STRUCTURE AND DESIGN STRUCTURE FOR CUSTOMIZING HISTORY EFFECTS OF SOI CIRCUITS  
A design structure is embodied in a machine readable medium for designing, manufacturing, or testing a design. The design structure includes a high-leakage dielectric formed over an active region...
US20130187244 PROGRAMMABLE FETs USING Vt-SHIFT EFFECT AND METHODS OF MANUFACTURE  
Programmable field effect transistors (FETs) are provided using high-k dielectric metal gate Vt shift effect and methods of manufacturing the same. The method of controlling Vt shift in a high-k...
US20140131817 GAP-FILL KEYHOLE REPAIR USING PRINTABLE DIELECTRIC MATERIAL  
Disposable gate structures are formed on a semiconductor substrate. A planarization dielectric layer is deposited over the disposable gate structures and planarized to provide a top surface that...
US20130062709 Gap-Fill Keyhole Repair Using Printable Dielectric Material  
Disposable gate structures are formed on a semiconductor substrate. A planarization dielectric layer is deposited over the disposable gate structures and planarized to provide a top surface that...
US20130313657 METHODS OF FORMING FLUORINATED HAFNIUM OXIDE GATE DIELECTRICS BY ATOMIC LAYER DEPOSITION  
In some embodiments, the present invention discloses a gate dielectric deposition process, including depositing a fluorinated hafnium oxide by an ALD process utilizing a fluorinated hafnium...
US20130277766 MULTIPLE HIGH-K METAL GATE STACKS IN A FIELD EFFECT TRANSISTOR  
When forming sophisticated high-k metal gate electrode structures, the threshold voltage characteristics are adjusted on the basis of a well-established high-k dielectric material with an...
US20100320547 SCAVANGING METAL STACK FOR A HIGH-K GATE DIELECTRIC  
A stack of a high-k gate dielectric and a metal gate structure includes a lower metal layer, a scavenging metal layer, and an upper metal layer. The scavenging metal layer meets the following two...
US20110198708 TRANSISTORS HAVING ARGON GATE IMPLANTS AND METHODS OF FORMING THE SAME  
Transistors are provided including first and second source/drain regions, a channel region and a gate stack having a first gate dielectric over a substrate, the first gate dielectric having a...
US20140042561 REPLACEMENT GATE ELECTRODE WITH PLANAR WORK FUNCTION MATERIAL LAYERS  
In a replacement gate scheme, a continuous material layer is deposited on a bottom surface and a sidewall surface in a gate cavity. A vertical portion of the continuous material layer is removed...
US20150145073 LOW-K DIELECTRIC SIDEWALL SPACER TREATMENT  
Systems and methods are provided for fabricating a semiconductor structure including sidewall spacers. An example semiconductor structure includes: a gate structure, a first sidewall spacer, and a...
US20140291776 Methods of atomic-layer deposition of hafnium oxide/erbium oxide bi-layer as advanced gate dielectrics  
Provided is a two-step ALD deposition process for forming a gate dielectric involving an erbium oxide layer deposition followed by a hafnium oxide layer deposition. Hafnium oxide can provide a...
US20130313656 METHODS OF ATOMIC LAYER DEPOSITION OF HAFNIUM OXIDE / ERBIUM OXIDE BI-LAYER AS ADVANCED GATE DIELECTRICS  
Provided is a two-step ALD deposition process for forming a gate dielectric involving an erbium oxide layer deposition followed by a hafnium oxide layer deposition. Hafnium oxide can provide a...
US20120286374 HIGH-K DIELECTRIC GATE STRUCTURES RESISTANT TO OXIDE GROWTH AT THE DIELECTRIC/SILICON SUBSTRATE INTERFACE AND METHODS OF MANUFACTURE THEREOF  
Methods for fabricating gate electrode/high-k dielectric gate structures having an improved resistance to the growth of silicon dioxide (oxide) at the dielectric/silicon-based substrate interface....
US20110221012 HIGH-K DIELECTRIC GATE STRUCTURES RESISTANT TO OXIDE GROWTH AT THE DIELECTRIC/SILICON SUBSTRATE INTERFACE AND METHODS OF MANUFACTURE THEREOF  
Methods for fabricating gate electrode/high-k dielectric gate structures having an improved resistance to the growth of silicon dioxide (oxide) at the dielectric/silicon-based substrate interface....
US20110227171 HIGH-K DIELECTRIC AND METAL GATE STACK WITH MINIMAL OVERLAP WITH ISOLATION REGION  
A high-k dielectric and metal gate stack with minimal overlap with an adjacent oxide isolation region and related methods are disclosed. One embodiment of the gate stack includes a high dielectric...
US20120139062 SELF-ALIGNED CONTACT COMBINED WITH A REPLACEMENT METAL GATE/HIGH-K GATE DIELECTRIC  
A method of forming a semiconductor device is provided that includes forming a replacement gate structure on portion a substrate, wherein source regions and drain regions are formed on opposing...
US20130161697 REPLACEMENT GATE MOSFET WITH RAISED SOURCE AND DRAIN  
A disposable dielectric spacer is formed on sidewalls of a disposable material stack. Raised source/drain regions are formed on planar source/drain regions by selective epitaxy. The disposable...
US20150108590 ANISOTROPIC DIELECTRIC MATERIAL GATE SPACER FOR A FIELD EFFECT TRANSISTOR  
Capacitive coupling between a gate electrode and underlying portions of the source and drain regions can be enhanced while suppressing capacitive coupling between the gate electrode and laterally...
US20110037117 LANTHANUM-METAL OXIDE DIELECTRIC APPARATUS, METHODS, AND SYSTEMS  
Lanthanum-metal oxide dielectrics and methods of fabricating such dielectrics provide an insulating layer in a variety of structures for use in a wide range of electronic devices and systems. In...
US20150035087 Method for Manufacturing Dummy Gate in Gate-Last Process and Dummy Gate in Gate-Last Process  
A method for manufacturing a dummy gate in a gate-last process and a dummy gate in a gate-last process are provided. The method includes: providing a semiconductor substrate; growing a gate oxide...
US20110042759 SWITCHING DEVICE HAVING A MOLYBDENUM OXYNITRIDE METAL GATE  
A field effect transistor (FET) includes a body region and a source region disposed at least partially in the body region. The FET also includes a drain region disposed at least partially in the...
US20150001644 FERMI-LEVEL UNPINNING STRUCTURES FOR SEMICONDUCTIVE DEVICES, PROCESSES OF FORMING SAME, AND SYSTEMS CONTAINING SAME  
An interlayer is used to reduce Fermi-level pinning phenomena in a semiconductive device with a semiconductive substrate. The interlayer may be a rare-earth oxide. The interlayer may be an ionic...
US20100327377 Fermi-level unpinning structures for semiconductive devices, processes of forming same, and systems containing same  
An interlayer is used to reduce Fermi-level pinning phenomena in a semiconductive device with a semiconductive substrate. The interlayer may be a rare-earth oxide. The interlayer may be an ionic...
US20130277767 ETCH STOP LAYER FORMATION IN METAL GATE PROCESS  
A method of forming a semiconductor device that includes forming a metal gate conductor of a gate structure on a channel portion of a semiconductor substrate. A gate dielectric cap is formed on...
US20120223397 METAL GATE STRUCTURE AND MANUFACTURING METHOD THEREOF  
A method for manufacturing a metal gate structure includes providing a substrate having a high-K gate dielectric layer and a bottom barrier layer sequentially formed thereon, forming a work...
US20130313659 Method for Producing High-Purity Lanthanum, High-Purity Lanthanum, Sputtering Target Formed from High-Purity Lanthanum, and Metal Gate Film Having Highy-Purity Lanthanum as Main Component  
The present invention addresses the problem of providing a technique capable of efficiently and stably providing a method for producing high-purity lanthanum, the method characterized in that: a...
US20070075385 Sidewall SONOS gate structure with dual-thickness oxide and method of fabricating the same  
A SONOS gate structure has an oxide structure on a substrate having gate pattern thereon. The oxide structure has a relatively thinner oxide portion on the substrate for keeping good program/erase...
US20130140648 ELECTROCHEMICAL TRANSISTOR  
The object of the invention is to provide a three-terminal switch (electrochemical transistor) capable of achieving sharp on-off operation. A source electrode and a drain electrode are juxtaposed...
US20070138579 FABRICATION OF NITROGEN CONTAINING REGIONS ON SILICON CONTAINING REGIONS IN INTEGRATED CIRCUITS, AND INTEGRATED CIRCUITS OBTAINED THEREBY  
Silicon oxide (210) is grown on a silicon region (130). At least a portion (210N) of the silicon oxide (210) adjacent to the silicon region (130) is nitrided. Then some of the silicon oxide (210)...
US20140367802 SELF-ALIGNED INSULATED FILM FOR HIGH-K METAL GATE DEVICE  
An integrated circuit includes a semiconductor substrate, a gate dielectric over the substrate, a metal gate structure over the semiconductor substrate and the gate dielectric, a dielectric film...
US20110108929 ENHANCED ATOMIC LAYER DEPOSITION  
Atomic layer deposition is enhanced using plasma. Plasma begins prior to flowing a second precursor into a chamber. The second precursor reacts with a first precursor to deposit a layer on a...
US20150162414 SANDWICH SILICIDATION FOR FULLY SILICIDED GATE FORMATION  
When forming field effect transistors, a common problem is the formation of a Schottky barrier at the interface between a metal thin film in the gate electrode and a semiconductor material,...
US20110291205 HIGH-K GATE DIELECTRIC AND METHOD OF MANUFACTURE  
A device and method of formation are provided for a high-k gate dielectric and gate electrode. The high-k dielectric material is formed, and a silicon-rich film is formed over the high-k...
US20140319626 Metal Gate Stack Having TiAlCN as Work Function Layer and/or Blocking/Wetting Layer  
A metal gate stack having a titanium aluminum carbon nitride (TiAlCN) as a work function layer and/or a multi-function blocking/wetting layer, and methods of manufacturing the same, are disclosed....

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