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US20150179783 Metal-Gate MOS Transistor and Method of Forming the Transistor with Reduced Gate-to-Source and Gate-to-Drain Overlap Capacitance  
The gate-to-source and gate-to-drain overlap capacitance of a MOS transistor with a metal gate and a high-k gate dielectric are reduced by forming the high-k gate dielectric along the inside of a...
US20140124874 Metal-Gate MOS Transistor and Method of Forming the Transistor with Reduced Gate-to-Source and Gate-to-Drain Overlap Capacitance  
The gate-to-source and gate-to-drain overlap capacitance of a MOS transistor with a metal gate and a high-k gate dielectric are reduced by forming the high-k gate dielectric along the inside of a...
US20140027865 MOSFET GATE AND SOURCE/DRAIN CONTACT METALLIZATION  
A MOSFET is described incorporating a common metal process to make contact to the source, drain and the metal gate respectively which may be formed concurrently with the same metal or metals.
US20110272765 MOSFET GATE AND SOURCE/DRAIN CONTACT METALLIZATION  
A MOSFET is described incorporating a common metal process to make contact to the source, drain and the metal gate respectively which may be formed concurrently with the same metal or metals.
US20130082337 OXYGEN SCAVENGING SPACER FOR A GATE ELECTRODE  
At least one layer including a scavenging material and a dielectric material is deposited over a gate stack, and is subsequently anisotropically etched to form a...
US20130175641 REPLACEMENT GATE MOSFET WITH A HIGH PERFORMANCE GATE ELECTRODE  
In a replacement gate scheme, a continuous material layer is deposited on a bottom surface and a sidewall surface in a gate cavity. A vertical portion of the continuous material layer is removed...
US20130285159 METHOD FOR ETCHING GATE STACK  
A method for etching a metal gate stack is provided. The method includes forming a gate stack on a substrate, where the gate stack includes a metal gate. A wet etch process is performed on the...
US20110073963 SUPERIOR FILL CONDITIONS IN A REPLACEMENT GATE APPROACH BY CORNER ROUNDING PRIOR TO COMPLETELY REMOVING A PLACEHOLDER MATERIAL  
In a replacement gate approach, a superior cross-sectional shape of the gate opening may be achieved by performing a material erosion process in an intermediate state of removing the placeholder...
US20140159169 RECESSING AND CAPPING OF GATE STRUCTURES WITH VARYING METAL COMPOSITIONS  
A approach for recessing and capping metal gate structures is disclosed. Embodiments include: forming a dummy gate electrode on a substrate; forming a hard mask over the dummy gate electrode;...
US20120256275 METAL GATE STRUCTURE AND MANUFACTURING METHOD THEREOF  
A manufacturing method of a metal gate structure includes first providing a substrate having a dummy gate formed thereon. The dummy gate includes a high-K gate dielectric layer, a bottom barrier...
US20150137270 SUPERIOR INTEGRITY OF A HIGH-K GATE STACK BY FORMING A CONTROLLED UNDERCUT ON THE BASIS OF A WET CHEMISTRY  
A transistor device includes a gate electrode structure. The gate electrode structure includes a high-k gate insulation layer, a metal-containing first electrode material positioned above the...
US20120261770 METAL GATE STRUCTURE  
A metal gate structure includes a high-K gate dielectric layer, an N-containing layer, a work function metal layer, and an N-trapping layer. The N-containing layer is positioned between the work...
US20130328135 PREVENTING FULLY SILICIDED FORMATION IN HIGH-K METAL GATE PROCESSING  
A gate stack structure for a transistor device includes a gate dielectric layer formed over a substrate; a first silicon gate layer formed over the gate dielectric layer; a dopant-rich monolayer...
US20140246734 REPLACEMENT METAL GATE WITH MULITIPLE TITANIUM NITRIDE LATERS  
A semiconductor comprising a multilayer structure which prevents oxidization of the titanium nitride layer that protects a high-K dielectric layer is provided. Replacement metal gates are over the...
US20120286372 Reliability of high-K gate dielectric layers  
A method for improving the reliability of a high-k gate dielectric layer comprises incorporating a noble metal into a transistor gate stack that contains the high-k gate dielectric layer and...
US20120326243 TRANSISTOR HAVING ALUMINUM METAL GATE AND METHOD OF MAKING THE SAME  
A transistor having an aluminum metal gate includes a substrate, a high-k gate dielectric layer, an aluminum metal gate and a source/drain region. The high-k gate dielectric layer is disposed on...
US20130161764 REPLACEMENT GATE HAVING WORK FUNCTION AT VALENCE BAND EDGE  
Replacement gate stacks are provided, which increase the work function of the gate electrode of a p-type field effect transistor (PFET). In one embodiment, the work function metal stack includes a...
US20150091105 CONTINUOUS TUNING OF ERBIUM SILICIDE METAL GATE EFFECTIVE WORK FUNCTION VIA A PVD NANOLAMINATE APPROACH FOR MOSFET APPLICATIONS  
Erbium silicide layers can be used in CMOS transistors in which the work function of the erbium silicide layers can be tuned for use in PMOS and NMOS devices. A nano-laminate sputtering approach...
US20120299123 Gate-Last Fabrication of Quarter-Gap MGHK FET  
A quarter-gap p-type field effect transistor (PFET) formed by gate-last fabrication includes a gate stack formed on a silicon substrate, the gate stack including: a high-k dielectric layer located...
US20110309455 Gate-Last Fabrication of Quarter-Gap MGHK FET  
A quarter-gap p-type field effect transistor (PFET) formed by gate-last fabrication includes a gate stack formed on a silicon substrate, the gate stack including: a high-k dielectric layer located...
US20130168780 METHOD AND STRUCTURE TO REDUCE FET THRESHOLD VOLTAGE SHIFT DUE TO OXYGEN DIFFUSION  
Oxygen scavenging material embedded in an isolation structure provides improved protection of high dielectric constant (Hi-K) materials from oxygen contamination while avoiding alteration of work...
US20070158765 Gallium lanthanide oxide films  
Electronic apparatus and methods of forming the electronic apparatus include a gallium lanthanide oxide film for use in a variety of electronic systems. The gallium lanthanide oxide film may be...
US20140361384 METAL GATE TRANSISTOR AND METHOD FOR FORMING THE SAME  
Various embodiments provide metal gate transistors and methods for forming the same. In an exemplary method, a substrate having a top surface and a back surface can be provided. A dummy gate can...
US20100308412 CONTROL OF FLATBAND VOLTAGES AND THRESHOLD VOLTAGES IN HIGH-K METAL GATE STACKS AND STRUCTURES FOR CMOS DEVICES  
A high-k metal gate stack and structures for CMOS devices and a method for forming the devices. The gate stack includes a high-k dielectric having a high dielectric constant greater than...
US20120043622 PROGRAMMABLE FETs USING Vt-SHIFT EFFECT AND METHODS OF MANUFACTURE  
Programmable field effect transistors (FETs) are provided using high-k dielectric metal gate Vt shift effect and methods of manufacturing the same. The method of controlling Vt shift in a high-k...
US20110108928 METHOD FOR FORMING HIGH-K METAL GATE DEVICE  
The present disclosure provides a method of fabricating a semiconductor device that includes providing a semiconductor substrate, forming a metal gate on the substrate, the metal gate having a...
US20070018214 Magnesium titanium oxide films  
Embodiments of a magnesium titanium oxide structure on a substrate provide a dielectric for use in a variety of electronic devices. Embodiments of methods of fabricating such a dielectric include...
US20100213554 GATE STRUCTURE AND METHOD FOR TRIMMING SPACERS  
A gate structure includes a gate disposed on a substrate, a first spacer disposed on the substrate and surrounding the gate and a second spacer disposed on the first spacer and surrounding the...
US20150179821 SELECTIVE GATE OXIDE PROPERTIES ADJUSTMENT USING FLUORINE  
Fluorine is located in selective portions of a gate oxide to adjust characteristics of the gate oxide. In some embodiments, the fluorine promotes oxidation which increases the thickness of the...
US20120181630 REPLACEMENT GATE WITH REDUCED GATE LEAKAGE CURRENT  
Replacement gate work function material stacks are provided, which provides a work function about the energy level of the conduction band of silicon. After removal of a disposable gate stack, a...
US20120248550 PLASMA DOPING TO REDUCE DIELECTRIC LOSS DURING REMOVAL OF DUMMY LAYERS IN A GATE STRUCTURE  
The embodiments of methods and structures disclosed herein provide mechanisms of performing doping an inter-level dielectric film, ILD0, surrounding the gate structures with a dopant to reduce its...
US20120273902 GATE STACK STRUCTURE WITH ETCH STOP LAYER AND MANUFACTURING PROCESS THEREOF  
A gate stack structure with an etch stop layer is provided. The gate stack structure is formed over a substrate. A spacer is formed on a sidewall of the gate stack structure. The gate stack...
US20130069174 CONTACT FOR HIGH-K METAL GATE DEVICE  
A method of making an integrated circuit includes providing a substrate with a high-k dielectric and providing a polysilicon gate structure over the high-k dielectric. A doping process is...
US20110018072 METAL GATE TRANSISTOR AND METHOD FOR FABRICATING THE SAME  
A metal gate transistor is disclosed. The metal gate transistor preferably includes: a substrate, a metal gate disposed on the substrate, and a source/drain region disposed in the substrate with...
US20140159168 DEEP DEPLETED CHANNEL MOSFET WITH MINIMIZED DOPANT FLUCTUATION AND DIFFUSION LEVELS  
CMOS devices are fabricated with a channel layer having minimized dopant fluctuation and diffusion. Embodiments include forming a dummy gate, on a substrate, between a pair of spacers, forming, in...
US20120139061 Self-Aligned Contact For Replacement Gate Devices  
A conductive top surface of a replacement gate stack is recessed relative to a top surface of a planarization dielectric layer by at least one etch. A dielectric capping layer is deposited over...
US20150097252 SIMPLIFIED GATE-FIRST HKMG MANUFACTURING FLOW  
When forming field effect transistors according to the gate-first HKMG approach, the cap layer formed on top of the gate electrode had to be removed before the silicidation step, resulting in...
US20150035077 MOS TRANSISTORS INCLUDING A RECESSED METAL PATTERN IN A TRENCH  
Methods of manufacturing a MOS transistor are provided. The methods may include forming first and second trenches. The methods may further include forming first metal patterns within portions of...
US20120256276 Metal Gate and Fabricating Method Thereof  
A method of manufacturing a metal gate is provided. The method includes providing a substrate. Then, a gate dielectric layer is formed on the substrate. A multi-layered stack structure having a...
US20120104513 FIELD EFFECT TRANSISTOR HAVING AN ASYMMETRIC GATE ELECTRODE  
The gate electrode of a metal oxide semiconductor field effect transistor (MOSFET) comprises a source side gate electrode and a drain side gate electrode that abut each other near the middle of...
US20120228723 GATE STRUCTURE AND METHOD FOR FABRICATING THE SAME  
A gate structure and a method for fabricating the same are described. A substrate is provided, and a gate dielectric layer is formed on the substrate. The formation of the gate dielectric layer...
US20130241010 Production Method for High-Purity Lanthanum, High-Purity Lanthanum, Sputtering Target Composed of High-Purity Lanthanum, and Metal Gate Film Containing High-Purity Lanthanum as Main Component  
A method for producing high-purity lanthanum having a purity of 4N or more excluding rare earth elements other than lanthanum and gas components, wherein lanthanum having a purity of 4N or more is...
US20140175566 CONVERTING A HIGH DIELECTRIC SPACER TO A LOW DIELECTRIC SPACER  
A dielectric constant of spacer material in a transistor is changed from a high-κ dielectric material to a low-κ dielectric material. The process uses oxidation treatments to enable the...
US20140084387 NON-PLANAR III-V FIELD EFFECT TRANSISTORS WITH CONFORMAL METAL GATE ELECTRODE & NITROGEN DOPING OF GATE DIELECTRIC INTERFACE  
A high-k gate dielectric interface with a group III-V semiconductor surface of a non-planar transistor channel region is non-directionally doped with nitrogen. In nanowire embodiments, a...
US20120080760 Dielectric structure, transistor and manufacturing method thereof  
The present invention discloses a dielectric structure, a transistor and a manufacturing method thereof with praseodymium oxide. The transistor with praseodymium oxide comprises at least a III-V...
US20070272990 DIFFUSION TUBE, DOPANT SOURCE FOR A DIFFUSION PROCESS AND DIFFUSION METHOD USING THE DIFFUSION TUBE AND THE DOPANT SOURCE  
According to an exemplary embodiment of the present invention, a diffusion tube includes a diffusion housing which includes a first cavity within a first end which receives a diffusion target, a...
US20130277764 Etch Stop Layer Formation In Metal Gate Process  
A method of forming a semiconductor device that includes forming a metal gate conductor of a gate structure on a channel portion of a semiconductor substrate. A gate dielectric cap is formed on...
US20120119307 SELF-ALIGNED CONTACT EMPLOYING A DIELECTRIC METAL OXIDE SPACER  
A dielectric liner is formed on sidewalls of a gate stack and a lower contact-level dielectric material layer is deposited on the dielectric liner and planarized. The dielectric liner is recessed...
US20120319214 STRUCTURE OF METAL GATE AND FABRICATION METHOD THEREOF  
A method for fabricating a metal gate includes the following steps. First, a substrate having an interfacial dielectric layer above the substrate is provided. Then, a gate trench having a barrier...
US20150255294 LOWERING PARASITIC CAPACITANCE OF REPLACEMENT METAL GATE PROCESSES  
The present disclosure provides a method of forming a gate structure of a semiconductor device with reduced gate-contact parasitic capacitance. In a replacement gate scheme, a high-k gate...

Matches 1 - 50 out of 392 1 2 3 4 5 6 7 8 >