Matches 1 - 9 out of 9


Match Document Document Title
US20090224335 FIELD EFFECT TRANSISTOR WITH REDUCED SHALLOW TRENCH ISOLATION INDUCED LEAKAGE CURRENT  
Edges of source and drain regions along the direction of a channel of a field effect transistor are formed within an active area offset from the boundary between the active area and a shallow...
US20080079093 Transistor including bulb-type recess channel and method for fabricating the same  
A method for fabricating a transistor including a bulb-type recess channel includes forming a bulb-type recess pattern in a substrate, forming a gate insulating layer over the substrate and the...
US20090096037 SEMICONDUCTOR DEVICE HAVING RECESSED FIELD REGION AND FABRICATION METHOD THEREOF  
A semiconductor device including an active region formed on a semiconductor substrate, and a field region adjacent to the active region, which is able to increase a width of the active region...
US20080258237 SEMICONDUCTOR DEVICE HAVING MULTI-CHANNEL AND METHOD OF FABRICATING THE SAME  
An embodiment of the present invention relates to a semiconductor device having a multi-channel and a method of fabricating the same. In an aspect, the semiconductor device includes a...
US20080277740 SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD  
In the present invention, there is provided a semiconductor device including: element isolation regions formed in a state of being buried in a semiconductor substrate such that an element...
US20150097248 SHALLOW TRENCH ISOLATION  
The semiconductor structure includes a plurality of first insulators in a substrate, a common insulating layer surrounding the sidewall and the bottom of said first insulators in said substrate,...
US20080211037 Semiconductor Device and Method of Forming Isolation Layer Thereof  
A method of forming an isolation layer of a semiconductor device includes the steps of forming a gate insulating layer and a conductive layer on an active area of a semiconductor substrate;...
US20130037888 SEMICONDUCTOR DEVICE  
A semiconductor device includes an active region defined by a device isolation layer and including first and second sections or regions, a gate electrode extending in a first direction across the...
US20110233686 INTERCONNECTING BIT LINES IN MEMORY DEVICES FOR MULTIPLEXING  
An embodiment of a memory device has a plurality of conductive plugs formed on a semiconductor substrate and a pair of successively adjacent first and second bit lines overlying and in contact...
Matches 1 - 9 out of 9