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US20050026408 Preventing silicide formation at the gate electrode in a replacement metal gate technology  
A hard mask may be formed and maintained over a polysilicon gate structure in a metal gate replacement technology. The maintenance of the hard mask, such as a nitride hard mask, may protect the...
US20080230848 STRUCTURE HAVING DUAL SILICIDE REGION AND RELATED METHOD  
A structure including a dual silicide region and a related method are disclosed. The structure may include a doped silicon, and a dual silicide region in the doped silicon, the dual silicide...
US20050156258 Method of forming silicide film having excellent thermal stability, semiconductor device and semiconductor memory device comprising silicide film formed of the same, and methods of manufacturing the semiconductor device and the semiconductor memory device  
Provided are a method of forming a silicide film having excellent thermal stability, a semiconductor device and a semiconductor memory device comprising the silicide film formed using the same,...
US20060163670 DUAL SILICIDE PROCESS TO IMPROVE DEVICE PERFORMANCE  
A semiconducting structure and a method of forming thereof, includes a substrate having a p-type device region and an n-type device region; a first-type suicide contact to the n-type device...
US20050212058 Resistance-reduced semiconductor device and fabrication thereof  
A resistance-reduced semiconductor device and fabrication thereof. The semiconductor device of the invention includes a semiconductor device body exposing at least one silicon-containing portion,...
US20060237801 Compensating for induced strain in the channels of metal gate transistors  
Strained channel field effect transistors may have a threshold voltage shift. This threshold voltage shift may be compensated for by adjusting channel doping. But this also adversely affects...
US20060102964 Passive device and method for forming the same  
An integrated circuit includes an active device, having a metal gate electrode, disposed on a substrate. A passive device, made of a semiconductor material, is disposed adjacent to the active...
US20060081943 Semiconductor device and method for the preparation thereof  
A semiconductor device in which penetration of a metal silicide film in a source/drain layer as well as generation of the leakage current is suppressed. A semiconductor device includes a gate 6,...
US20050208765 Method for the formation of silicides  
A process for forming a silicide on top of at least one silicon portion on the surface of a semiconductor wafer, comprising the following steps: a) implanting, at a defined depth in the silicon...
US20060091478 Semiconductor gate structure and method for preparing the same  
A semiconductor gate structure is described, which comprises a substrate, a gate oxide positioned on the substrate, a first conductive layer positioned on the gate oxide and a second conductive...
US20060043496 Semiconductor device and method for fabricating the same  
A semiconductor device includes: an active region formed in a substrate and surrounded with an isolation formed in the substrate; a gate electrode formed above the active region and made of a...
Matches 1 - 11 out of 11