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US20150179647 CMOS INVERTERS AND FABRICATION METHODS THEREOF  
A CMOS inverter is provided. The CMOS inverter includes a substrate. The CMOS inverter also includes an NMOS transistor having a first active region, a first isolation structure surrounding the...
US20110068369 METAL GATE AND HIGH-K DIELECTRIC DEVICES WITH PFET CHANNEL SiGe  
A method for fabricating a circuit structure is disclosed. The method includes depositing epitaxially a SiGe layer onto both NFET and PFET portions of a Si surface. Blanket disposing a first...
US20100109091 RECESSED DRAIN AND SOURCE AREAS IN COMBINATION WITH ADVANCED SILICIDE FORMATION IN TRANSISTORS  
During the manufacturing process for forming sophisticated transistor elements, the gate height may be reduced and a recessed drain and source configuration may be obtained in a common etch...
US20070138570 Formation of raised source/drain structures in NFET with embedded SiGe in PFET  
A structure and method for forming raised source/drain structures in a NFET device and embedded SiGe source/drains in a PFET device. We provide a NFET gate structure over a NFET region in a...
US20070120199 Low resistivity compound refractory metal silicides with high temperature stability  
Compound refractory metal suicides are formulated to exhibit low resistivity and high temperature stability. Embodiments include various types of semiconductor devices comprising source/drain...
US20090166681 MOS Transistor and Semiconductor Device  
According to one embodiment of the present invention, a MOS transistor includes a semiconductor layer including a source region, a drain region, and a channel region disposed between the source...
US20100193876 METHOD TO REDUCE MOL DAMAGE ON NiSi  
Transistor devices are formed with nickel silicide layers formulated to prevent degradation upon removal of overlying stress liners. Embodiments include transistors with nickel silicide layers...
US20090096034 Partially and Fully Silicided Gate Stacks  
Metal-oxide semiconductor (MOS) devices and techniques for the fabrication thereof are provided. In one aspect, a metal-oxide semiconductor device is provided comprising a substrate; and at least...
US20080203493 Semiconductor memory device and fabrication process thereof  
A SRAM includes a first CMOS inverter of first and second MOS transistors connected in series, a second CMOS inverter of third and fourth MOS transistors connected in series and forming a...
US20150061034 DEVICES HAVING INHOMOGENEOUS SILICIDE SCHOTTKY BARRIER CONTACTS  
A method of fabricating Schottky barrier contacts for an integrated circuit (IC). A substrate including a silicon including surface is provided having a plurality of transistors formed thereon,...
US20060138558 Semiconductor memory device and method of fabricating the same  
A semiconductor memory device includes: a semiconductor device base having an insulating substrate and a semiconductor layer overlying it; a cell array formed on the semiconductor device base with...
US20080246092 Semiconductor device structure with strain layer and method of fabricating the semiconductor device structure  
A semiconductor device with a strain layer and a method of fabricating the semiconductor device with a strain layer that can reduce a loading effect are provided. By arranging active dummies and...
US20080296696 Semiconductor Devices Including Doped Metal Silicide Patterns and Related Methods of Forming Such Devices  
Provided are a semiconductor device and a method of forming the same. The method includes forming an interlayer dielectric on a semiconductor substrate, forming a contact hole in the interlayer...
US20090020827 THIN GATE ELECTRODE CMOS DEVICES AND METHODS OF FABRICATING SAME  
A CMOS device and method of forming the CMOS device. The device including a source and a drain formed in a semiconductor substrate, the source and the drain and separated by a channel region of...
US20090194820 CMOS (COMPLEMENTARY METAL OXIDE SEMICONDUCTOR) DEVICES HAVING METAL GATE NFETS AND POLY-SILICON GATE PFETS  
A semiconductor structure fabrication method. The method includes providing a structure which includes (a) first and second semiconductor regions, (b) first and second gate dielectric regions on...
US20140246729 SEMICONDUCTOR DEVICE  
A semiconductor device including a substrate including an NMOS region and a PMOS region; first and second gate dielectrics on the NMOS and PMOS regions of the substrate and including a high-k...
US20070164369 Cobalt silicidation process for substrates comprised with a silicon-germanium layer  
A method comprises providing a semiconductor alloy layer on a semiconductor substrate, forming a gate structure on the semiconductor alloy layer, forming source and drain regions in the...
US20080315319 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SEMICONDUCTOR DEVICE  
A semiconductor device includes a dual gate CMOS logic circuit having gate electrodes with different conducting types and a trench capacitor type memory on a same substrate includes a trench of...
US20090085126 Hybrid metal fully silicided (FUSI) gate  
A semiconductor device and system for a hybrid metal fully silicided (FUSI) gate structure is disclosed. The semiconductor system comprises a PMOS gate structure, the PMOS gate structure including...
US20140151816 NOVEL CONTACT STRUCTURE FOR A SEMICONDUCTOR DEVICE AND METHODS OF MAKING SAME  
One device includes first and second spaced-apart active regions formed in a semiconducting substrate, a layer of gate insulation material positioned on the first active region, and a conductive...
US20100207215 Semiconductor Device and Method of Producing the Same  
A semiconductor device includes a semiconductor substrate; an N-channel type transistor forming region formed on the semiconductor substrate; a P-channel type transistor forming region formed on...
US20100123198 Semiconductor devices and methods of manufacturing the same  
Provided are semiconductor devices having low resistance contacts and methods of manufacturing the same. One or more of the semiconductor devices include a substrate having first and second active...
US20090194821 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME  
A method of fabricating a semiconductor device according to one embodiment includes: forming a SiGe crystal layer on a semiconductor substrate, the SiGe crystal layer having a first plane and a...
US20080318376 Semiconductor Device Manufactured Using a Method to Improve Gate Doping While Maintaining Good Gate Profile  
In one aspect, there is provided a method of manufacturing a semiconductor device. This method includes forming gate structures over a substrate, wherein the gate structures include gate...
US20160260720 SRAM MEMORY CELL AND SRAM MEMORY  
Various embodiments provide semiconductor structures and their fabrication methods. An SRAM memory cell can include at least one semiconductor structure, and an SRAM memory can include at least...
US20160240372 Cobalt silicidation process for substrates comprised with a silicon-germanium layer  
A method comprises providing a semiconductor alloy layer on a semiconductor substrate, forming a gate structure on the semiconductor alloy layer, forming source and drain regions in the...
US20150076615 INTERDIGITATED FINFETS  
A semiconductor device includes a first fin rising out of a semiconductor base. It further includes a second fin rising out of the semiconductor base. The second fin is substantially parallel to...
US20130062705 SEMICONDUCTOR DEVICE AND MANUFACTURING PROCESS THEREFOR  
In a semiconductor device, a gate electrode having a uniform composition prevents deviation in a work function. Controlling a Vth provides excellent operation properties. The semiconductor device...
US20120063212 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME  
According to one embodiment, a semiconductor device includes a first transistor and a second transistor having a conductivity type which is different from a conductivity type of the first...
Matches 1 - 29 out of 29