Matches 1 - 25 out of 25
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US20090242992 Inverter, logic circuit including an inverter and methods of fabricating the same  
An inverter, a logic circuit including the inverter and method of fabricating the same are provided. The inverter includes a load transistor of a depletion mode, and a driving transistor of an...
US20090242993 ESD protection device and manufacturing method thereof  
A junction forming region is formed between a drain region of a MOS structure and a device isolation region which surrounds the MOS structure and is in contact with the drain region, to form a PN...
US20090230476 OPTICALLY TRIGGERED ELECTRO-STATIC DISCHARGE PROTECTION CIRCUIT  
The present invention provides a method and apparatus for providing electrostatic discharge (ESD) protection between a first and a second circuit node. One embodiment of the ESD protection circuit...
US20090224326 AVOIDING PLASMA CHARGING IN INTEGRATED CIRCUITS  
A circuit having a circuit control terminal, a primary circuit and a protection circuit is provided. The primary circuit includes a primary control terminal and a primary gate oxide of a thickness...
US20090159973 SEMICONDUCTOR DEVICE HAVING NON-SILICIDE REGION IN WHICH NO SILICIDE IS FORMED ON DIFFUSION LAYER  
A semiconductor device includes first and second MOSFETs corresponding to at least first power source voltage and second power source voltage lower than the first power source voltage, and...
US20090097177 Electrostatic protection circuit  
An electrostatic protection circuit includes a first impurity region, a second impurity region, a first electrode, a third impurity region, a fourth impurity region, a second electrode, a fifth...
US20090085061 HIGH-VOLTAGE SEMICONDUCTOR SWITCHING ELEMENT  
In a base region of a first conductivity type, at least one emitter region of a second conductivity type and at least one sense region of the second conductivity type, spaced away from the emitter...
US20090085117 LEVEL SHIFT CIRCUIT AND SEMICONDUCTOR DEVICE THEREOF  
A level shift circuit and a semiconductor device are configured to prevent failure and malfunction even when an excessive negative voltage or ESD surge are applied to a high-voltage power supply...
US20090034137 ESD protection for bipolar-CMOS-DMOS integrated circuit devices  
An Electro-Static Discharge (ESD) protection device is formed in an isolated region of a semiconductor substrate. The ESD protection device may be in the form of a MOS or bipolar transistor or a...
US20080296687 FIELD-EFFECT TRANSISTOR (FET) WITH EMBEDDED DIODE  
A Field-Effect Transistor (FET) is provided that includes a first portion and a second portion separated from the first portion by a gap. The FET further includes at least one diode embedded within...
US20080296686 CIRCUIT BOARD AND DISPLAY APPARATUS  
A circuit board includes a transparent circuit substrate, at least one die and at least one electrostatic discharge (ESD) protection circuit. The transparent circuit substrate has a patterned...
US20080296613 ESD PROTECTION DEVICES  
An ESD protection device is provided. The ESD protection device comprises an SCR and an ESD detection circuit. The SCR is coupled between a high voltage and a ground and has a special semiconductor...
US20080277729 ELECTROSTATIC DISCHARGE PROTECTION ELEMENT  
A gate controlled fin resistance element for use as an electrostatic discharge (ESD) protection element in an electrical circuit has a fin structure having a first connection region, a second...
US20080237721 STRUCTURE AND CIRCUIT TECHNIQUE FOR UNIFORM TRIGGERING OF MULTIFINGER SEMICONDUCTOR DEVICES WITH TUNABLE TRIGGER VOLTAGE  
An external current injection source is provided to individual fingers of a multi-finger semiconductor device to provide the same trigger voltage across the multiple fingers. For example, the...
US20080211029 SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING THE SAME  
A semiconductor device which, in spite of the existence of a dummy active region, eliminates the need for a larger chip area and improves the surface flatness of the semiconductor substrate. In the...
US20080211027 ESD structure without ballasting resistors  
An electrostatic discharge (ESD) structure connected to a bonding pad in an integrated circuit comprising: a P-type substrate with one or more first P+ regions connected to a low voltage supply...
US20080211028 ELECTRO-STATIC DISCHARGE PROTECTION DEVICE, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING ELECTRO-STATIC DISCHARGE PROTECTION DEVICE  
An electrostatic discharge protection device including a gate electrode formed on a substrate. First and second diffusion regions of a first conductivity type are formed in the substrate with the...
US20080198519 ELECTROSTATIC DISCHARGE PROTECTION ELEMENT HAVING AN IMPROVED AREA EFFICIENCY  
An electrostatic discharge protection element is disclosed for protecting an internal circuit from electrostatic current. The electrostatic discharge protection element forms an embedded LVTSCR by...
US20080169509 Semiconductor device  
A semiconductor device includes a first well of a first conductive type formed in a surface portion of a semiconductor substrate; a first contact group connected with the first well; a second well...
US20080144244 WELL POTENTIAL TRIGGERED ESD PROTECTION  
The present invention provides an integrated circuit for providing ESD protection. The integrated circuit comprises a transistor device having at least one interleaved finger having a substrate...
US20080128817 ELECTROSTATIC DISCHARGE PROTECTION CIRCUIT USING TRIPLE WELLED SILICON CONTROLLED RECTIFIER  
Provided is an electrostatic discharge (ESD) protection circuit using a silicon controlled rectifier (SCR), which is applied to a semiconductor integrated circuit (IC). A semiconductor substrate...
US20080116519 Integrated Circuit Used in Smart Power Technology  
An integrated circuit used in smart power technology, in particular, for use in automobile applications, which includes: high-voltage terminals for connection to a high voltage, a smart circuit...
US20080111193 Serpentine ballasting resistors for multi-finger ESD protection device  
This invention discloses a ballasting resistor for an electrostatic discharge (ESD) device that comprises at least one first active region forming a source/drain of an ESD discharge transistor, at...
US20080067600 Storage Elements with Disguised Configurations and Methods of Using the Same  
In a first aspect, a first apparatus is provided. The first apparatus is an element of an integrated circuit (IC) having (1) a metal-oxide-semiconductor field-effect transistor (MOSFET) having...
US20080042208 TRENCH MOSFET WITH ESD TRENCH CAPACITOR  
An electrostatic discharging (ESD) protected metal oxide semiconductor field effect transistor (MOSFET), an epitaxial layer on substrate; a trench gate structure formed in the epitaxial layer; a...
Matches 1 - 25 out of 25