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US20130207192 Power Integrated Circuit with Incorporated Sense FET  
In one embodiment, a power integrated circuit device includes a main lateral high-voltage field-effect transistor (HVFET) and an adjacently-located lateral sense FET, both of which are formed on a...
US20090224326 AVOIDING PLASMA CHARGING IN INTEGRATED CIRCUITS  
A circuit having a circuit control terminal, a primary circuit and a protection circuit is provided. The primary circuit includes a primary control terminal and a primary gate oxide of a thickness...
US20090242992 Inverter, logic circuit including an inverter and methods of fabricating the same  
An inverter, a logic circuit including the inverter and method of fabricating the same are provided. The inverter includes a load transistor of a depletion mode, and a driving transistor of an...
US20140210007 ESD-Protection Circuit for Integrated Circuit Device  
A double-diffused metal oxide semiconductor (DMOS) structure is configured as an open drain output driver having electrostatic discharge (ESD) protection and a reverse voltage blocking diode...
US20080296687 FIELD-EFFECT TRANSISTOR (FET) WITH EMBEDDED DIODE  
A Field-Effect Transistor (FET) is provided that includes a first portion and a second portion separated from the first portion by a gap. The FET further includes at least one diode embedded...
US20100265622 ROBUST ESD PROTECTION CIRCUIT, METHOD AND DESIGN STRUCTURE FOR TOLERANT AND FAILSAFE DESIGNS  
A robust ESD protection circuit, method and design structure for tolerant and failsafe designs are disclosed. A circuit includes a middle junction control circuit that turns off a top NFET of a...
US20130228868 ELECTROSTATIC DISCHARGE PROTECTION DEVICES  
A semiconductor device for electrostatic discharge (ESD) protection including a source, a gate, a drain having a drain diffusion, and a diffusion region extending from, or located under, the drain...
US20140198416 CIRCUIT FOR AND METHOD OF ENABLING THE DISCHARGE OF ELECTRIC CHARGE IN AN INTEGRATED CIRCUIT  
A circuit for enabling the discharge of electric charge in an integrated circuit is described. The circuit comprises an input/output pad coupled to a first node; a first diode coupled between the...
US20110215410 I/O and Power ESD Protection Circuits By Enhancing Substrate-Bias in Deep-Submicron CMOS Process  
A technique for enhancing substrate bias of grounded-gate NMOS fingers (ggNMOSFET's) has been developed. By using this technique, lower triggering voltage of NMOS fingers can be achieved without...
US20120091530 Low trigger voltage electrostatic discharge NFET in triple well CMOS technology  
An electrostatic discharge (ESD) protection device for an integrated circuit includes a buried layer of a first polarity type formed in a substrate of a second polarity type. A well region of the...
US20070085142 TUNABLE PROTECTION SYSTEM FOR INTEGRATED CIRCUITS  
A tunable protection system including forming a tunable trigger device providing an adjustable protection activation level, forming a circuit protection device providing protection for integrated...
US20080042208 TRENCH MOSFET WITH ESD TRENCH CAPACITOR  
An electrostatic discharging (ESD) protected metal oxide semiconductor field effect transistor (MOSFET), an epitaxial layer on substrate; a trench gate structure formed in the epitaxial layer; a...
US20100149701 ELECTROSTATIC DISCHARGE CIRCUIT AND METHOD  
A method and integrated circuit renders a shunt structure non-conductive during a power up event or noise event for and in addition, during an electrostatic discharge event, keeps the shunt...
US20100301418 ELECTROSTATIC DISCHARGE PROTECTION DEVICE  
Disclosed is an electrostatic discharge protection device that overcomes problems of an LVTNR device by serially connecting a diode to the LVTNR device and coupling a gate of a MOSFET structure...
US20090230476 OPTICALLY TRIGGERED ELECTRO-STATIC DISCHARGE PROTECTION CIRCUIT  
The present invention provides a method and apparatus for providing electrostatic discharge (ESD) protection between a first and a second circuit node. One embodiment of the ESD protection circuit...
US20080198519 ELECTROSTATIC DISCHARGE PROTECTION ELEMENT HAVING AN IMPROVED AREA EFFICIENCY  
An electrostatic discharge protection element is disclosed for protecting an internal circuit from electrostatic current. The electrostatic discharge protection element forms an embedded LVTSCR by...
US20090085061 HIGH-VOLTAGE SEMICONDUCTOR SWITCHING ELEMENT  
In a base region of a first conductivity type, at least one emitter region of a second conductivity type and at least one sense region of the second conductivity type, spaced away from the emitter...
US20090097177 Electrostatic protection circuit  
An electrostatic protection circuit includes a first impurity region, a second impurity region, a first electrode, a third impurity region, a fourth impurity region, a second electrode, a fifth...
US20080296613 ESD PROTECTION DEVICES  
An ESD protection device is provided. The ESD protection device comprises an SCR and an ESD detection circuit. The SCR is coupled between a high voltage and a ground and has a special...
US20110042747 STRUCTURE FOR PROTECTING AN INTEGRATED CIRCUIT AGAINST ELECTROSTATIC DISCHARGES  
A structure for protecting an integrated circuit against electrostatic discharges, including a device for removing overvoltages between first and second power supply rails; and a protection cell...
US20080237721 STRUCTURE AND CIRCUIT TECHNIQUE FOR UNIFORM TRIGGERING OF MULTIFINGER SEMICONDUCTOR DEVICES WITH TUNABLE TRIGGER VOLTAGE  
An external current injection source is provided to individual fingers of a multi-finger semiconductor device to provide the same trigger voltage across the multiple fingers. For example, the...
US20140367783 ESD TRANSISTOR AND ESD PROTECT CIRCUIT THEREOF  
An ESD transistor and an ESD protection circuit thereof are provided. An ESD transistor includes a collector region disposed on a surface of a substrate, a sink region disposed vertically below...
US20090159973 SEMICONDUCTOR DEVICE HAVING NON-SILICIDE REGION IN WHICH NO SILICIDE IS FORMED ON DIFFUSION LAYER  
A semiconductor device includes first and second MOSFETs corresponding to at least first power source voltage and second power source voltage lower than the first power source voltage, and...
US20120091529 HIGH VOLTAGE RESISTOR  
Provided is a semiconductor device. The semiconductor device includes a resistor and a voltage protection device. The resistor has a spiral shape. The resistor has a first portion and a second...
US20150262995 SERIES RESISTOR OVER DRAIN REGION IN HIGH VOLTAGE DEVICE  
Some embodiments relate to a semiconductor device. The semiconductor device includes a drain region and a channel region surrounding the drain region. A source region surrounds the channel region...
US20080296686 CIRCUIT BOARD AND DISPLAY APPARATUS  
A circuit board includes a transparent circuit substrate, at least one die and at least one electrostatic discharge (ESD) protection circuit. The transparent circuit substrate has a patterned...
US20080116519 Integrated Circuit Used in Smart Power Technology  
An integrated circuit used in smart power technology, in particular, for use in automobile applications, which includes: high-voltage terminals for connection to a high voltage, a smart circuit...
US20130153959 SEMICONDUCTOR DEVICE  
An allowable current amount of a ballast resistance is increased without increasing the width of the ballast resistance. At least one of resistances included in a ballast resistance has a first...
US20110042716 ESD protection device structure  
An ESD protection device structure includes a well having a first conductive type, a first doped region having a second conductive type disposed in the well, a second doped region having the first...
US20110266624 ELECTROSTATIC DISCHARGE PROTECTION HAVING MULTIPLY SEGMENTED DIODES IN PROXIMITY TO TRANSISTOR  
An ESD protection device for an I/O pad (401); the device comprising a MOS transistor (420) having at least one elongated source region (422) and at least one elongated drain region (421) in a...
US20080277729 ELECTROSTATIC DISCHARGE PROTECTION ELEMENT  
A gate controlled fin resistance element for use as an electrostatic discharge (ESD) protection element in an electrical circuit has a fin structure having a first connection region, a second...
US20110121394 CHIP AND ELECTROSTATIC DISCHARGE PROTECTION DEVICE THEREOF  
An ESD protection device is provided, which includes a P-type doped region, an N-type doped region, a first P+ doped region, a first N+ doped region, a second N+ doped region and a third N+ doped...
US20090085117 LEVEL SHIFT CIRCUIT AND SEMICONDUCTOR DEVICE THEREOF  
A level shift circuit and a semiconductor device are configured to prevent failure and malfunction even when an excessive negative voltage or ESD surge are applied to a high-voltage power supply...
US20080144244 WELL POTENTIAL TRIGGERED ESD PROTECTION  
The present invention provides an integrated circuit for providing ESD protection. The integrated circuit comprises a transistor device having at least one interleaved finger having a substrate...
US20050179087 LDMOS transistor with improved ESD protection  
An ESD protection device. The ESD protection device is incorporated with a gap structure in a laterally diffused metal oxide semiconductor (LDMOS) field effect transistor, isolating a doped region...
US20050045957 Processing method of silicon controlled rectifier for ESD protection  
A processing method of a silicon controlled rectifier (SCR) for ESD protection. In the present invention, a high voltage ion implantation step is utilized to respectively implant the same type ion...
US20100181621 SIGNAL AND POWER SUPPLY INTEGRATED ESD PROTECTION DEVICE  
An integrated circuit, design structures and methods of forming the integrated circuit which includes a signal pad ESD coupled to an I/O signal pad and a power supply ESD coupled to a source VDD....
US20070075372 Semiconductor device and manufacturing process therefor  
There is provided a semiconductor device wherein at least the largest width of a source/drain region is larger than the width of a semiconductor region and the source/drain region has a slope...
US20080211028 ELECTRO-STATIC DISCHARGE PROTECTION DEVICE, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING ELECTRO-STATIC DISCHARGE PROTECTION DEVICE  
An electrostatic discharge protection device including a gate electrode formed on a substrate. First and second diffusion regions of a first conductivity type are formed in the substrate with the...
US20100208400 Pad interface circuit and method of improving reliability of the pad interface circuit  
The pad interface circuit includes a first stack MOS transistor having a first terminal connected to a pad and a bulk connected to a first supply voltage; a second stack MOS transistor having a...
US20090242993 ESD protection device and manufacturing method thereof  
A junction forming region is formed between a drain region of a MOS structure and a device isolation region which surrounds the MOS structure and is in contact with the drain region, to form a PN...
US20050285200 Device for electrostatic discharge protection  
Disclosed herein is a device for electrostatic discharge protection. According to the present invention, the device for electrostatic discharge protection comprises a semiconductor substrate, a...
US20050285199 Method for producing a semiconductor circuit, and corresponding semiconductor circuit  
A semiconductor circuit containing a pad for electrical bonding of the semiconductor circuit and a metal arrangement disposed beneath the pad. The metal arrangement is in a metal layer of the...
US20130234251 SEMICONDUCTOR INTEGRATED DEVICE  
A semiconductor integrated device in which electrostatic discharge damage can be reliably prevented, includes a semiconductor substrate in which an electrostatic protection circuit including a...
US20150145052 Circuit and Method for Improving ESD Tolerance and Switching Speed  
Embodiments of systems, methods, and apparatus for improving ESD tolerance and switching time for semiconductor devices including metal-oxide-semiconductor (MOS) field effect transistors (FETs),...
US20110012204 TRIG MODULATION ELECTROSTATIC DISCHARGE (ESD) PROTECTION DEVICES  
Trig modulation electrostatic discharge (ESD) protection devices are presented. An ESD protection device includes a semiconductor substrate. A high voltage N-well (HVNW) region is formed in the...
US20070080403 Low trigger voltage electrostatic discharge protection device  
An ESD protection device with a low trigger voltage includes a semiconductor layer, a lightly doped well region formed in the semiconductor layer, a highly doped anode region formed in the well...
US20070052033 Load driving device  
A load driving device includes a drive control signal generation circuit generating a load drive control signal and a semiconductor buffer circuit generating an output signal in response to the...
US20110204447 ESD TOLERANT I/O PAD CIRCUIT INCLUDING A SURROUNDING WELL  
An electrostatic discharge tolerant device includes a semiconductor body having a first conductivity type, and a pad. A surrounding well having a second conductivity type is laid out in a ring to...
US20110073950 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME  
The semiconductor device includes a first MIS transistor including a gate insulating film 92, a gate electrode 108 formed on the gate insulating film 92 and source/drain regions 154, a second MIS...

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