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US20140015041 TRENCH GATE MOSFET  
A trench gate MOSFET is provided. An epitaxial layer is disposed on a substrate. A body layer is disposed in the epitaxial layer. The epitaxial layer has a first trench therein, the body layer has...
US20150008515 TRENCH GATE MOSFET  
A trench gate MOSFET is provided. An epitaxial layer is disposed on a substrate. A body layer is disposed in the epitaxial layer. The epitaxial layer has a first trench therein, the body layer has...
US20150008514 TRENCH GATE MOSFET  
A trench gate MOSFET is provided. An epitaxial layer is disposed on a substrate. A body layer is disposed in the epitaxial layer. The epitaxial layer has a first trench therein, the body layer has...
US20120256255 RECESSED TRENCH GATE STRUCTURE AND METHOD OF FABRICATING THE SAME  
A recessed trench gate structure is provided. The recessed trench gate structure includes a substrate with a recessed trench, a gate dielectric layer disposed around an inner surface of the...
US20150187586 METHOD FOR FABRICATING A METAL HIGH-K GATE STACK FOR A BURIED RECESSED ACCESS DEVICE  
A method for fabricated a buried recessed access device comprising etching a plurality of gate trenches in a substrate, implanting and activating a source/drain region in the substrate, depositing...
US20080185642 Trench MOSFET with deposited oxide  
A trench type power semiconductor device which includes deposited rather than grown oxide in the trenches for the electrical isolation of electrodes disposed inside the trenches from the...
US20130062687 SRAM CELL HAVING RECESSED STORAGE NODE CONNECTIONS AND METHOD OF FABRICATING SAME  
An SRAM cell and a method of forming an SRAM cell. The SRAM cell includes a first pass gate field effect transistor (FET) and a first pull-down FET sharing a first common source/drain (S/D) and a...
US20120211826 Trench DMOS Transistor with Reduced Gate-to-Drain Capacitance  
A trench DMOS transistor with a very low on-state drain-to-source resistance and a high gate-to-drain charge includes one or more floating islands that lie between the gate and drain to reduce the...
US20130113038 TRENCH MOSFET WITH SPLIT TRENCHED GATE STRUCTURES IN CELL CORNERS FOR GATE CHARGE REDUCTION  
A trench MOSFET with closed cells having split trenched gates structure in trenched gates intersection area in cell corner is disclosed. The invented split trenched gates structure comprises an...
US20070063269 Trench IGBT with increased short circuit capability  
A trench type IGBT has a gate oxide lining the side walls and bottom of the trench which have a thickness greater than 1500Å and in the range of 1800Å to 2500Å, and preferably 2000Å to increase...
US20120286352 TRENCH MOS STRUCTURE AND METHOD FOR MAKING THE SAME  
A trench MOS structure is provided. The trench MOS structure includes a substrate, an epitaxial layer, a trench, a gate isolation, a trench gate, a guard ring and a reinforcement structure within...
US20110147831 METHOD FOR REPLACEMENT METAL GATE FILL  
An exemplary embodiment of a method for forming a gate for a planar-type or a finFET-type transistor comprises forming a gate trench that includes an interior surface. A first work-function metal...
US20110068389 Trench MOSFET with high cell density  
A trench MOSFET with high cell density is disclosed where there is a heavily doped contact region on the top surface of mesas between a pair of gate trenches. The present invention can prevent the...
US20110254086 SHIELDED TRENCH MOSFET WITH MULTIPLE TRENCHED FLOATING GATES AS TERMINATION  
A trench MOSFET comprising a plurality of transistor cells having shielded trenched gates and multiple trenched floating gates as termination region is disclosed. The trenched floating gates have...
US20130228857 METHOD OF FORMING AN ASSYMETRIC POLY GATE FOR OPTIMUM TERMINATION DESIGN IN TRENCH POWER MOSFETS  
A semiconductor device having a plurality of transistors includes a termination area that features a transistor with an asymmetric gate.
US20130153999 TRENCH GATE MOSFET DEVICE  
A trench gate MOSFET device has a drain region, a drift region, a trench gate having a gate electrode and a poly-silicon region, a super junction pillar juxtaposing the trench gate, a body region...
US20080211016 TRENCH MOSGATED DEVICE WITH DEEP TRENCH BETWEEN GATE TRENCHES  
A trench gated MOSFET especially for operation in high radiation environments has a deep auxiliary trench located between the gate trenches. A boron implant is formed in the walls of the deep...
US20090315104 Trench MOSFET with shallow trench structures  
A trench MOSFET with shallow trench structure is disclosed. The improved structure resolves the problem of degradation of BV caused by the As Ion Implantation in termination surface and no...
US20150228491 TRANSISTOR HAVING TUNGSTEN-BASED BURIED GATE STRUCTURE, METHOD FOR FABRICATING THE SAME  
A method for fabricating a transistor that includes forming a trench in a substrate, forming a gate dielectric layer on a surface of the trench, forming a first fluorine-free tungsten layer as an...
US20120146135 METHOD AND A STRUCTURE FOR ENHANCING ELECTRICAL INSULATION AND DYNAMIC PERFORMANCE OF MIS STRUCTURES COMPRISING VERTICAL FIELD PLATES  
In an MIS structure a field plate electrode is incorporated below a buried gate electrode by using an insulating oxide layer, which is formed concurrently with the gate dielectric layer. In order...
US20140239386 Trench Gated Power Device With Multiple Trench Width and its Fabrication Process  
Power devices, and related process, where both gate and field plate trenches have multiple stepped widths, using self-aligned process steps.
US20130277735 WAFER LEVEL MOSFET METALLIZATION  
Systems and methods of fabricating Wafer Level Chip Scale Packaging (WLCSP) devices with transistors having source, drain and gate contacts on one side of the transistor while still having...
US20120248526 Wafer Level MOSFET Metallization  
Systems and methods of fabricating Wafer Level Chip Scale Packaging (WLCSP) devices with transistors having source, drain and gate contacts on one side of the transistor while still having...
US20140159144 TRENCH GATE MOSFET AND METHOD OF FORMING THE SAME  
A trench gate MOSFET is provided. An N-type epitaxial layer on an N-type substrate has a wider first trench and a narrower second trench below the first trench. A first insulating layer is in the...
US20140175536 HIGH DENSITY TRENCH-BASED POWER MOSFETS WITH SELF-ALIGNED ACTIVE CONTACTS AND METHOD FOR MAKING SUCH DEVICES  
Aspects of the present disclosure describe a high density trench-based power MOSFET with self-aligned source contacts. The source contacts are self-aligned with a first insulative spacer and a...
US20150061000 PROCESS FOR FORMING A SHORT CHANNEL TRENCH MOSFET AND DEVICE FORMED THEREBY  
A process for forming a short channel trench MOSFET. The process includes forming a first implant at the bottom of a trench that is formed in the body of the trench MOSFET and forming a second or...
US20120280311 TRENCH-GATE MOSFET DEVICE AND METHOD FOR MAKING THE SAME  
The embodiments of the present disclosure disclose a trench-gate MOSFET device and the method for making the trench-gate MOSFET device. The trench-gate MOSFET device comprises a curving dopant...
US20150200294 TRENCH POWER MOSFET AND MANUFACUTRING METHOD THEREOF  
A trench power MOSFET and a manufacturing method thereof are provided. The trench power MOSFET has a buried oxide layer formed in the epitaxial layer, wherein the buried oxide layer is located...
US20120068231 VERTICAL DISCRETE DEVICES WITH TRENCH CONTACTS AND ASSOCIATED METHODS OF MANUFACTURING  
The present technology is related generally to vertical discrete devices with a trench at the topside of the vertical discrete devices. The trench is filled with a conducting material. In this...
US20140291753 TRENCH MOSFET STRUCTURE HAVING SELF-ALIGNED FEATURES FOR MASK SAVING AND ON-RESISTANCE REDUCTION  
A trench MOSFET structure having self-aligned features for mask saving and on-resistance reduction is disclosed, wherein the source region is formed by performing source Ion Implantation through...
US20150236085 HIGH VOLTAGE TRENCH TRANSISTOR  
A method of forming a device is disclosed. A substrate defined with a device region is provided. A gate having a gate electrode, first and second gate dielectric layers is formed in a trench. The...
US20120228699 METHODS FOR FABRICATING TRANSISTORS INCLUDING ONE OR MORE CIRCULAR TRENCHES  
A transistor and a method of fabricating a transistor, including a metal oxide deposited on an epitaxial layer, a photo resist deposited and patterned over the metal oxide and the metal oxide and...
US20120248528 TRENCH-GATE LDMOS STRUCTURES  
MOSFET devices for RF applications that use a trench-gate in place of the lateral gate conventionally used in lateral MOSFET devices. A trench-gate provides devices with a single, short channel...
US20130313636 TERMINATION ARRANGEMENT FOR VERTICAL MOSFET  
Representative implementations of devices and techniques provide a termination arrangement for a transistor structure. The periphery of a transistor structure may include a recessed area having...
US20130248985 METHODS OF FORMING REPLACEMENT GATE STRUCTURES WITH A RECESSED CHANNEL  
Disclosed herein are various methods of forming replacement gate structures with a recessed channel region. In one example, the method includes forming a sacrificial gate structure above a...
US20110254084 STRUCTURES AND METHODS OF FABRICATING DUAL GATE DEVICES  
First polysilicon (poly-1) is deposited into deep trenches that have been formed in a substrate. A first polysilicon polishing process is performed to planarize the exposed surfaces of the poly-1...
US20100320532 TRENCH GATE MOSFET AND METHOD OF MANUFACTURING THE SAME  
A Trench gate MOS field-effect transistor having a narrow, lightly doped, region extending from a channel accommodating region (3) of same conductivity type immediately adjacent the trench...
US20140319600 TSV Structure With A Built-In U-Shaped FET Transistor For Improved Characterization  
A through-the silicon via (TSV) structure providing a built-in TSV U-shaped FET that includes an annular gate shaped as a TSV partially embedded in a substrate, the annular gate having an inner...
US20130049103 REPLACEMENT GATE COMPATIBLE eDRAM TRANSISTOR WITH RECESSED CHANNEL  
An eDRAM is fabricated including high performance logic transistor technology and ultra low leakage DRAM transistor technology. Embodiments include forming a recessed channel in a substrate,...
US20110084332 TRENCH TERMINATION STRUCTURE  
A trench MOS device includes a base semiconductor substrate, an epitaxial layer grown on the base semiconductor substrate, a first trench in the epitaxial layer, and a stepped trench comprising a...
US20150097231 VERTICAL TRENCH MOSFET DEVICE IN INTEGRATED POWER TECHNOLOGIES  
A semiconductor device having a vertical drain extended MOS transistor may be formed by forming deep trench structures to define at least one vertical drift region bounded on at least two opposite...
US20120037980 EDGE TERMINATION REGION  
An isolation region (14) is formed between an edge termination region (2) having deep trenches (20,34) and the central region (4). The isolation region includes gate fingers (18) extending from...
US20140027843 Techniques Providing High-K Dielectric Metal Gate CMOS  
A method for manufacturing a semiconductor device includes forming a first dummy gate on a substrate, performing a doping process to the substrate, thereby forming a source and a drain at sides of...
US20150108567 METHOD OF FORMING STACKED TRENCH CONTACTS AND STRUCTURES FORMED THEREBY  
Methods and associated structures of forming a microelectronic device are described. Those methods may include forming a structure comprising a first contact metal disposed on a source/drain...
US20140252464 METHOD OF FORMING STACKED TRENCH CONTACTS AND STRUCTURES FORMED THEREBY  
Methods and associated structures of forming a microelectronic device are described. Those methods may include forming a structure comprising a first contact metal disposed on a source/drain...
US20140167153 Trench Fet Having Merged Gate Dielectric  
In one implementation, a trench field-effect transistor (trench FET) includes a semiconductor substrate having a drain region, a drift zone over the drain region, and depletion trenches formed...
US20070034941 Deep N diffusion for trench IGBT  
An increased conductivity deep diffusion of the same conductivity type as that of the drift region is provided between adjacent trenches of a trench type IGBT and below the trenches to reduce the...
US20130193509 SOI LATERAL MOSFET DEVICES  
The present invention relates to a semiconductor power device and power integrated circuits (ICs). The lateral SOI MOSFET in the present comprises a trench gate extended to the dielectric buried...
US20130264636 Trench FET with Ruggedness Enhancement Regions  
According to an exemplary implementation, a field-effect transistor (FET) includes first and second gate trenches extending to a drift region of a first conductivity type. The FET also includes a...
US20090242975 Vertical pillar transistor  
A vertical pillar transistor may include a plurality of lower pillars, a plurality of upper pillars, a first insulation part, a second insulation part and a word line. The plurality of lower...