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US20150137216 VERTICAL MEMORY DEVICES AND METHODS OF MANUFACTURING THE SAME  
A vertical memory device includes a substrate, a channel, gate lines and a connecting portion. A plurality of the channels extend in a first direction which is vertical to a top surface of a...
US20140367770 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME  
A semiconductor device including an active cell region formed over the surface of a silicon substrate and including a vertical MOSFET, a drain electrode formed over the surface of the silicon...
US20140252458 SEMICONDUCTOR DEVICE HAVING VERTICAL CHANNEL TRANSISTOR AND METHOD FOR FABRICATING THE SAME  
A semiconductor device having a substrate; a plurality of pillar structures, wherein each pillar structure includes an active pillar disposed over the substrate; a gate electrode surrounding an...
US20140091385 SEMICONDUCTOR DEVICE  
A semiconductor device includes a first pillar-shaped silicon layer formed on a planar silicon layer, a gate insulating film formed around the first pillar-shaped silicon layer, a first gate...
US20140077289 SEMICONDUCTOR DEVICE HAVING SUPER JUNCTION STRUCTURE AND METHOD FOR MANUFACTURING THE SAME  
A semiconductor device having a super junction structure includes: multiple first columns extending in a current flowing direction; and multiple second columns extending in the current flowing...
US20130328120 SEMICONDUCTOR DEVICE  
A device comprises a substrate, an n-layer and a p-layer, an n-electrode, and a p-electrode. A step is formed at an outer circumference of the device. A protective film is formed so as to...
US20130307057 SEMICONDUCTOR DEVICE  
A semiconductor device includes a first pillar-shaped silicon layer formed on a planar silicon layer, a gate insulating film formed around the first pillar-shaped silicon layer, a first gate...
US20130026560 SEMICONDUCTOR DEVICE  
A parallel p-n layer (20) is provided as a drift layer between an active portion and an n+ drain region (11). The parallel p-n layer (20) is formed by an n-type region (1) and a p-type region (2)...
US20120267706 Semiconductor device and manufacturing method thereof  
The invention discloses a novel MOSFET device and its implementation method, the device comprising: a substrate; a gate stack structure, on either side of which is eliminated a conventional...
US20120139034 Process For Manufacturing A MOS Device With Intercell Ion Implant  
A process for manufacturing a MOS device includes forming a semiconductor layer having a first type of conductivity; forming an insulated gate structure having an electrode region, above the...
US20120132956 SEMICONDUCTOR COMPONENT WITH HIGH BREAKTHROUGH TENSION AND LOW FORWARD RESISTANCE  
A semiconductor component having a semiconductor body is disclosed. In one embodiment, the semiconductor component includes a drift zone of a first conductivity type, a drift control zone composed...
US20110180843 CHARGE-BALANCE POWER DEVICE COMPRISING COLUMNAR STRUCTURES AND HAVING REDUCED RESISTANCE, AND METHOD AND SYSTEM OF SAME  
An embodiment of a charge-balance power device formed in an epitaxial layer having a first conductivity type and housing at least two columns of a second conductivity type, which extend through...
US20110068387 Semiconductor device including vertical transistor and horizontal transistor and method of manufacturing the same  
A semiconductor device includes a semiconductor substrate, a vertical transistor, a horizontal transistor, a lead, wire-bonding pads, and penetrating electrodes. The semiconductor substrate has...
US20110042734 MEMORY CELL WITH A VERTICALLY ORIENTED TRANSISTOR COUPLED TO A DIGIT LINE AND METHOD OF FORMING THE SAME  
A memory cell, array and device include an active area formed in a substrate with a vertical transistor including a first end disposed over a first portion of the active area. The vertical...
US20110018056 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME  
A first local wiring includes a convex portion protruding from a base and a protrusion protruding from a side surface of the convex portion. The convex portion of the first local wiring is...
US20090224310 POWER SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME  
A power semiconductor device capable of transmitting gate signals in all directions (e.g., up-/down-ward/right-/left-ward) on a plane and a method of manufacturing the same. The power...
US20150263074 TRANSISTOR DEVICE AND METHOD OF MAKING THEREOF  
A device is disclosed including one or more field effect transistors, each field effect transistor including: an elongated drain contact line including an electrically conductive material...
US20150243766 METHOD AND APPARATUS FOR POWER DEVICE WITH MULTIPLE DOPED REGIONS  
A semiconductor device is provided. The device includes a substrate having a first conductivity type. The device further includes a drain region, a source region, and a well region disposed in the...
US20150236094 DUAL VERTICAL CHANNEL  
Among other things, one or more semiconductor arrangements and techniques for forming such semiconductor arrangements are provided herein. A semiconductor arrangement comprises a first channel...
US20150228718 VERTICAL STRUCTURE AND METHOD OF FORMING SEMICONDUCTOR DEVICE  
According to an exemplary embodiment, a method of forming a semiconductor device is provided. The method includes: providing a vertical structure over a substrate; forming an etch stop layer over...
US20150194435 VERTICAL-TYPE NON-VOLATILE MEMORY DEVICES HAVING DUMMY CHANNEL HOLES  
A vertical-type nonvolatile memory device is provided in which differences between the sizes of channel holes in which channel structures are formed are reduced. The vertical-type nonvolatile...
US20150171143 TRANSISTOR, RESISTANCE VARIABLE MEMORY DEVICE INCLUDING THE SAME, AND MANUFACTURING METHOD THEREOF  
A resistance variable memory device including a vertical transistor includes an active pillar including a channel region, a source formed in one end of the channel region, and a lightly doped...
US20150091081 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME  
A semiconductor device includes a semiconductor substrate including a plurality of pillars, a gate electrode formed to surround a lower portion of the pillar and having a top surface lower than a...
US20150076588 VERTICAL TRANSISTOR AND MANUFACTURING METHOD THEREOF  
A vertical transistor and a manufacturing method thereof are provided herein. The manufacturing method includes forming a first patterned conductive layer on a substrate; forming a patterned metal...
US20150069411 SEMICONDUCTOR DEVICE, JUNCTION FIELD EFFECT TRANSISTOR AND VERTICAL FIELD EFFECT TRANSISTOR  
A semiconductor device according to an embodiment is at least partially arranged in or on a substrate and includes a recess forming a mesa, wherein the mesa extends along a direction into the...
US20150048294 VARIABLE RESISTIVE MEMORY DEVICE INCLUDING VERTICAL CHANNEL PMOS TRANSISTOR AND METHOD OF MANUFACTURING THE SAME  
A semiconductor device having a vertical channel, a variable resistive memory device including the same, and a method of manufacturing the same are provided. The semiconductor device having a...
US20150014764 SUPER JUNCTION MOSFET, METHOD OF MANUFACTURING THE SAME, AND COMPLEX SEMICONDUCTOR DEVICE  
A super junction MOSFET is disclosed. The super junction MOSFET includes a plurality of mutually parallel pn junctions extending in a vertical direction on a first principal surface of an n-type...
US20140353742 Semiconductor Device and Method for Producing the Same  
A power semiconductor device comprises a first substrate that is highly doped with a first dopant type, the first substrate having a front face and a back face, the back face forming a backside of...
US20140346588 SUPERJUNCTION POWER DEVICE AND MANUFACTURING METHOD  
A method for manufacturing a semiconductor power device, comprising the steps of: forming a trench in a semiconductor body having a first type of conductivity; partially filling the trench with...
US20140327068 Semiconductor Device with a Super Junction Structure with One, Two or More Pairs of Compensation Layers  
A super junction semiconductor device comprises a semiconductor portion with mesa regions protruding from a base section. The mesa regions are spatially separated in a lateral direction parallel...
US20140299915 SEMICONDUCTOR DEVICE  
In a semiconductor device having a vertical semiconductor element configured to pass an electric current between an upper electrode and a lower electrode, a field stop layer includes a...
US20140247674 VERTICAL ACCESS DEVICE AND APPARATUSES HAVING A BODY CONNECTION LINE, AND RELATED METHOD OF OPERATING THE SAME  
Methods, apparatuses, and systems for providing a body connection to a vertical access device. The vertical access device may include a digit line extending along a substrate to a digit line...
US20140239247 TRANSISTOR, RESISTANCE VARIABLE MEMORY DEVICE INCLUDING THE SAME, AND MANUFACTURING METHOD THEREOF  
A resistance variable memory device including a vertical transistor includes an active pillar including a channel region, a source formed in one end of the channel region, and a lightly doped...
US20140145256 ELECTRONIC DEVICE COMPRISING A CONDUCTIVE STRUCTURE AND AN INSULATING LAYER WITHIN A TRENCH  
An electronic device can include a semiconductor layer overlying a substrate and having a primary surface and a thickness, wherein a trench extends through at least approximately 50% of the...
US20140138763 Semiconductor Integrated Device with Channel Region  
A method of fabricating a semiconductor integrated circuit (IC) is disclosed. The method includes receiving a semiconductor device precursor. The semiconductor device precursor includes a...
US20140103424 ELECTRONIC DEVICE COMPRISING CONDUCTIVE STRUCTURES AND AN INSULATING LAYER BETWEEN THE CONDUCTIVE STRUCTURES AND WITHIN A TRENCH  
An electronic device can include a substrate including an underlying doped region and a semiconductor layer overlying the substrate. A trench can have a sidewall and extend at least partly through...
US20140103423 METHOD OF PRODUCING PRECISION VERTICAL AND HORIZONTAL LAYERS IN A VERTICAL SEMICONDUCTOR STRUCTURE  
The present invention relates to providing layers of different thickness on vertical and horizontal surfaces (15, 20) of a vertical semiconductor device (1). In particular the invention relates to...
US20140091384 Reverse Polarity Protection for n-Substrate High-Side Switches  
A semiconductor device is disclosed. In accordance with a first aspect of the present invention the device includes a semiconductor chip having a substrate, a first supply terminal electrically...
US20130270628 Replacement Channels  
The present disclosure relates to a device and method for strain inducing or high mobility channel replacement in a semiconductor device. The semiconductor device is configured to control current...
US20130240983 PROCESS FOR FABRICATING A FIELD-EFFECT TRANSISTOR DEVICE IMPLEMENTED ON A NETWORK OF VERTICAL NANOWIRES, THE RESULTING TRANSISTOR DEVICE, AN ELECTRONIC DEVICE COMPRISING SUCH TRANSISTOR DEVICES AND A PROCESSOR COMPRISING AT LEAST ONE SUCH DEVICE  
A process for fabricating a field-effect transistor device (20) implemented on a network of vertical nanowires (24), includes: producing a source electrode (26) and a drain electrode (30) at each...
US20130221426 ELECTRIC POWER SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME  
A manufacturing method of an electric power semiconductor device includes following processes. A plurality of first second conductivity type impurity implantation layers are formed in a surface of...
US20130214347 CIRCUIT INCLUDING VERTICAL TRANSISTORS  
An electrical circuit includes a first transistor and a second transistor. Each transistor includes a substrate and a first electrically conductive material layer stack positioned on the...
US20130161733 SEMICONDUCTOR DEVICE  
Disclosed herein a semiconductor device, which comprises: a vertical MOS transistor that has an upper diffusion layer, and a first lower diffusion layer disposed at a lower position than the upper...
US20130153987 ELECTRONIC DEVICE COMPRISING A CONDUCTIVE STRUCTURE AND AN INSULATING LAYER WITHIN A TRENCH AND A PROCESS OF FORMING THE SAME  
An electronic device can include a semiconductor layer overlying a substrate and having a primary surface and a thickness, wherein a trench extends through at least approximately 50% of the...
US20130134500 POWER SEMICONDUCTOR DEVICE  
A problem associated with n-channel power MOSFETs and the like that the following is caused even by relatively slight fluctuation in various process parameters is solved: source-drain breakdown...
US20130093004 SEMICONDUCTOR DEVICE INCLUDING DUMMY PILLAR NEAR INTERMEDIATE PORTION OF SEMICONDUCTOR PILLAR GROUP  
A semiconductor device includes a semiconductor pillar group having semiconductor pillars which are formed in a first direction with a space left therebetween. A dummy pillar is disposed near a...
US20130069109 SEMICONDUCTOR DEVICE HAVING TRENCH STRUCTURE AND METHOD OF MANUFACTURING THE SAME  
According to an embodiment, a trench structure and a second semiconductor layer are provided in a semiconductor device. In the trench structure, a trench is provided in a surface of a device...
US20130032878 SEMICONDUCTOR DEVICE  
According to example embodiments, a semiconductor device includes horizontal patterns stacked on a substrate. The horizontal patterns define an opening through the horizontal patterns. A first...
US20120326226 SUPERJUNCTION DEVICE AND METHOD FOR MANUFACTURING THE SAME  
A superjunction device is disclosed, wherein P-type regions in an active region are not in contact with the N+ substrate, and the distance between the surface of the N+ substrate and the bottom of...
US20120169262 SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING THE SAME, AND POWER MODULE  
A semiconductor device includes an n-type drain layer, an n-type base layer provided on the n-type drain layer, a p-type base layer and an n-type source layer partially formed in surface layer...