Match Document Document Title
US20150179637 Semiconductor Devices  
A semiconductor device includes a first doping region extending from a main surface of a semiconductor substrate into the semiconductor substrate. Further, the semiconductor device includes a...
US20150171174 Vertical Transistor Device Structure with Cylindrically-Shaped Regions  
A vertical power transistor device includes a semiconductor layer of a first conductivity type, with a plurality of cylindrically-shaped dielectric regions disposed in the semiconductor layer. The...
US20150162432 SEMICONDUCTOR DEVICE  
An n− drift region is disposed on the front surface of an n+ semiconductor substrate composed of a wide band gap semiconductor. A p-channel region is selectively disposed on the surface layer of...
US20150162343 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME  
A {111} plane of a substrate having a silicon crystal structure meets a top surface of the substrate to form an interconnection line on the top surface. A first stacked structure and a second...
US20150155378 SEMICONDUCTOR DEVICE  
In a semiconductor power device such as a power MOSFET having a super-junction structure in each of an active cell region and a chip peripheral region, an outer end of a surface region of a second...
US20150155298 THREE-DIMENSIONAL DEVICES HAVING REDUCED CONTACT LENGTH  
Various embodiments comprise apparatuses and methods including a memory array having alternating levels of semiconductor materials and dielectric material with strings of memory cells formed on...
US20150145025 SEMICONDUCTOR DEVICE  
Provided is a semiconductor device having improved performance. A semiconductor substrate is formed with unit LDMOSFET elements. The unit LDMOSFET elements have respective source regions...
US20150137219 SEMICONDUCTOR DEVICE  
A semiconductor device includes a fin-shaped silicon layer and a pillar-shaped silicon layer on the fin-shaped silicon layer, where a width of the pillar-shaped silicon layer is equal to a width...
US20150137218 SEMICONDUCTOR DEVICE WITH SURROUNDING GATE TRANSISTOR  
A method for producing a semiconductor device includes a first step of forming a fin-shaped silicon layer on a silicon substrate using a first resist and forming a first insulating film...
US20150137217 SEMICONDUCTOR POWER MODULES AND DEVICES  
An electronic component is described which includes a first transistor encased in a first package, the first transistor being mounted over a first conductive portion of the first package, and a...
US20150129955 SEMICONDUCTOR DEVICES INCLUDING VERTICAL MEMORY CELLS AND METHODS OF FORMING SAME  
A semiconductor device may include a memory array including vertical memory cells connected to a digit line, word lines, and a body connection line. A row or column of the memory array may include...
US20150129878 SEMICONDUCTOR DEVICE  
A semiconductor device includes a peripheral circuit region on a substrate, a polysilicon layer on the peripheral circuit region, a memory cell array region on the polysilicon layer and...
US20150123193 SGT-INCLUDING SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME  
A method for manufacturing a semiconductor device includes forming an SGT in a semiconductor pillar on a semiconductor substrate and forming a wiring semiconductor layer so as to contact a side...
US20150116031 Semiconductor Device and Integrated Apparatus Comprising the same  
The present disclosure provides a semiconductor device and an integrated apparatus having the same. The semiconductor device includes a substrate, a buffer layer on the substrate, a compensation...
US20150115325 Spacer Supported Lateral Channel FET  
A semiconductor device includes a semiconductor material and trenches extending into the semiconductor material from a first main surface of the semiconductor material to form mesas of...
US20150102401 Vertical Semiconductor Device with Thinned Substrate  
A vertical semiconductor device (e.g. a vertical power device, an IGBT device, a vertical bipolar transistor, a UMOS device or a GTO thyristor) is formed with an active semiconductor region,...
US20150102346 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME  
A semiconductor device is provided as follows. A peripheral circuit structure is disposed on a first substrate. A cell array structure is disposed on the peripheral circuit structure. A second...
US20150097229 3-D NONVOLATILE MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME  
A three-dimensional (3-D) nonvolatile memory device includes channel layers protruding perpendicular to a surface of a substrate, interlayer insulating layers and conductive layer patterns...
US20150097228 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE  
Provided is a method for fabricating a semiconductor device, which includes the following steps. First, a substrate having at least one transistor is provided. A first insulation layer is formed...
US20150097227 SEMICONDUCTOR DEVICE WITH REDUCED GATE LENGTH  
A semiconductor device includes a first type region including a first conductivity type. The semiconductor device includes a second type region including a second conductivity type. The...
US20150091082 Semiconductor Device  
A semiconductor device includes a semiconductor substrate, a surface of which is provided with: a source region having a first conductivity type is formed in a body region having a second...
US20150084120 Charge-Compensation Semiconductor Device  
An active area of a semiconductor body includes a first charge-compensation structure having spaced apart n-type pillar regions, and an n-type first field-stop region of a semiconductor material...
US20150076589 SEMICONDUCTOR DEVICE  
A semiconductor device of an embodiment has a first conductive type first semiconductor layer, a second conductive type second semiconductor layer provided in the first semiconductor layer having...
US20150069502 Semiconductor Device  
A semiconductor device includes an active region which is surrounded by a device isolation region on a semiconductor substrate and which extends in a first direction; a silicon pillar which...
US20150069501 SEMICONDUCTOR ARRANGEMENT  
A semiconductor arrangement includes a first semiconductor device including a first type region having a first conductivity type and a second type region having a second conductivity type. The...
US20150060996 SEMICONDUCTOR DEVICE WITH SILICIDE  
A semiconductor device includes a first type region including a first conductivity type. The semiconductor device includes a second type region including a second conductivity type. The...
US20150060988 SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME  
Semiconductor devices, and methods of fabricating the same, include forming a trench between a plurality of patterns on a substrate to be adjacent to each other, forming a first sacrificial layer...
US20150054066 SEMICONDUCTOR DEVICES INCLUDING VERTICAL TRANSISTORS, ELECTRONIC SYSTEMS INCLUDING THE SAME AND METHODS OF MANUFACTURING THE SAME  
The semiconductor device includes word lines on a semiconductor substrate, common gates connected to each of the word lines and vertically disposed in the semiconductor substrate, buried bit lines...
US20150054063 APPARATUSES HAVING A VERTICAL MEMORY CELL  
Methods, apparatuses, and systems for providing a body connection to a vertical access device. The vertical access device may include a digit line extending along a substrate to a digit line...
US20150054062 POWER SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF  
A power semiconductor device includes a cell region on a semiconductor substrate, at least a transistor device in the cell region, a peripheral termination region encompassing the cell region, a...
US20150048444 SEMICONDUCTOR DEVICES INCLUDING BIT LINE CONTACT PLUG AND PERIPHERAL TRANSISTOR  
A semiconductor device having a cell area and a peripheral area includes a semiconductor substrate, a cell insulating isolation region delimiting a cell active region of the semiconductor...
US20150048443 SEMICONDUCTOR DEVICE  
A semiconductor device includes a pillar-shaped silicon layer and a first-conductivity-type diffusion layer in an upper portion of the pillar-shaped silicon layer. A sidewall having a laminated...
US20150048442 SEMICONDUCTOR ARRANGEMENT WITH ONE OR MORE SEMICONDUCTOR COLUMNS  
A semiconductor arrangement includes a substrate region and a first semiconductor column projecting from the substrate region. The semiconductor arrangement includes a second semiconductor column...
US20150048441 SEMICONDUCTOR ARRANGEMENT WITH ONE OR MORE SEMICONDUCTOR COLUMNS  
A semiconductor arrangement comprises a substrate region and a first semiconductor column projecting from the substrate region. The semiconductor arrangement comprises a second semiconductor...
US20150048292 SEMICONDUCTOR DEVICE HAVING VERTICAL CHANNEL, RESISTIVE MEMORY DEVICE INCLUDING THE SAME, AND METHOD OF MANUFACTURING THE SAME  
A semiconductor device, a resistive memory device including the same, and a method of manufacturing the same are provided. The semiconductor device includes a pillar extending substantially...
US20150041885 SEMICONDUCTOR MEMORY DEVICE  
A semiconductor memory device includes: a sense amplifier; a plurality of memory cell arrays; a shared MOS transistor that connects/disconnects the sense amplifier and a bit line included in the...
US20150041884 POWER SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME  
There is provided a power semiconductor device including: a first semiconductor region of a first conductivity type; second semiconductor regions formed in the first semiconductor region and being...
US20150035049 Vertical Semiconductor MOSFET Device with Double Substrate-Side Multiple Electrode Connections and Encapsulation  
A semiconductor device with substrate-side exposed device-side electrode (SEDE) is disclosed. The semiconductor device has semiconductor substrate (SCS) with device-side, substrate-side and...
US20150035048 A SUPPER JUNCTION STRUCTURE INCLUDES A THICKNESS OF FIRST AND SECOND SEMICONDUCTOR REGIONS GRADUALLY CHANGED FROM A TRANSISTOR AREA INTO A TERMINATION AREA  
A super junction semiconductor device includes a super junction structure including first and second areas alternately arranged along a first lateral direction and extending in parallel along a...
US20150001613 SEMICONDUCTOR DEVICES INCLUDING STAIR STEP STRUCTURES, AND RELATED METHODS  
Semiconductor devices, such as three-dimensional memory devices, include a memory array including a stack of conductive tiers and a stair step structure. The stair step structure is positioned...
US20140374819 SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE FABRICATION METHOD  
An n− drift layer is a parallel pn layer having an n-type region and a p-type region are alternately arranged in the direction parallel to the main surface so as to come into contact with each...
US20140374817 NON-VOLATILE MEMORY DEVICE  
A non-volatile memory device includes: a semiconductor pillar stretched perpendicularly to a substrate; a plurality of memory cells stacked along the semiconductor pillar; a bit line coupled with...
US20140367771 HIGH VOLTAGE SEMICONDUCTOR DEVICES AND METHODS OF MAKING THE DEVICES  
Metal-oxide-semiconductor field-effect transistor (MOSFET) devices are described which have a p-type region between the p-type well regions of the device. The p-type region can be either floating...
US20140367769 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME  
A semiconductor device forms a salicide layer to surround an upper surface and a circumference of a lateral surface of a pillar. A contact area between the pillar and a lower electrode may be...
US20140346589 Semiconductor Device with Charge Compensation  
A semiconductor device includes a semiconductor body and a source metallization arranged on a first surface of the body. The body includes: a first semiconductor layer including a...
US20140339628 SEMICONDUCTOR DEVICE  
A semiconductor device includes a fin-shaped silicon layer on a silicon substrate and a first insulating film around the fin-shaped silicon layer. A pillar-shaped silicon layer resides on the...
US20140339627 SEMICONDUCTOR DEVICE  
A semiconductor device includes a pillar-shaped silicon layer and a first-conductivity-type diffusion layer in an upper portion of the pillar-shaped silicon layer. A sidewall having a laminated...
US20140339626 MEMORY DEVICE HAVING STITCHED ARRAYS OF 4 F+hu 2 +l MEMORY CELLS  
A memory device comprises a semiconductor substrate having a plurality of parallel trenches therein, a memory region formed in the substrate including an array of memory cells having a plurality...
US20140327071 Method of Manufacturing a Semiconductor Device  
The method includes providing a semiconductor chip having a first main face and a second main face opposite the first main face. The semiconductor chip includes an electrical device adjacent to...
US20140319599 SEMICONDUCTOR DEVICE  
A first semiconductor device of an embodiment includes a first semiconductor layer of a first conductivity type, a first control electrode, an extraction electrode, a second control electrode, and...