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US20150372078 MODULATED SUPER JUNCTION POWER MOSFET DEVICES  
A semiconductor device—e.g., a super junction power MOSFET—includes a number of columns of one type of dopant formed in a region of another type of dopant. Generally speaking, the columns are...
US20150364597 DOUBLE-SIDED VERTICAL SEMICONDUCTOR DEVICE WITH THINNED SUBSTRATE  
A vertical semiconductor device is formed in a semiconductor layer having a first surface, a second surface and background doping. A first doped region, doped to a conductivity type opposite that...
US20150364468 Discrete Semiconductor Transistor  
A discrete semiconductor transistor includes a gate resistor electrically coupled between a gate electrode terminal and a gate electrode of the discrete semiconductor transistor. A resistance R of...
US20150364333 SEMICONDUCTOR DEVICE AND METHOD OF FORMING VERTICAL STRUCTURE  
According to an exemplary embodiment, a method of forming vertical structures is provided. The method includes the following operations: providing a substrate; forming a first oxide layer over the...
US20150357462 LDMOS DEVICE AND STRUCTURE FOR BULK FINFET TECHNOLOGY  
A lateral double-diffused MOS (LDMOS) bulk finFET device for high-voltage operation includes a first-well region and two or more second-well regions formed on a substrate material and one or more...
US20150357461 INTEGRATED TERMINATION FOR MULTIPLE TRENCH FIELD PLATE  
A semiconductor device includes a vertical MOS transistor with a plurality of parallel RESURF drain trenches separated by a constant spacing in a vertical drain drift region. The vertical MOS...
US20150357428 SURROUNDING GATE TRANSISTOR (SGT) STRUCTURE  
The semiconductor device according to the present invention is an nMOS SGT and is composed of a first n+ type silicon layer, a first gate electrode containing metal and a second n+ type silicon...
US20150357379 SEMICONDUCTOR DEVICE  
According to an embodiment, a semiconductor device includes two electrodes extending in a first direction, a semiconductor layer provided between the two electrodes, an insulating film disposed...
US20150357346 SEMICONDUCTOR MEMORY DEVICES AND METHODS OF FABRICATING THE SAME  
A semiconductor memory device and a method of fabricating the same. The device includes a plurality of gates vertically stacked on a top surface of a substrate with an epitaxial layer formed in...
US20150357334 Arrays Comprising Vertically-Oriented Transistors and Integrated Circuitry Comprising a Conductive Line Buried in Silicon-Comprising Semiconductor Material  
An array includes vertically-oriented transistors, rows of access lines, and columns of data/sense lines. Individual of the rows include an access line interconnecting transistors in that row....
US20150349119 METHOD FOR PRODUCING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE  
A method for producing a semiconductor device includes a first step of forming a first insulating film around the fin-shaped semiconductor layer; a second step of forming a pillar-shaped...
US20150349118 VERTICAL TRANSISTOR AND METHOD TO FORM VERTICAL TRANSISTOR CONTACT NODE  
A vertical transistor structure includes a substrate with a protruding structure, an offset layer covering a top surface of the protruding structure, a conductive layer disposed on the offset...
US20150349114 SEMICONDUCTOR DEVICE  
In a semiconductor device provided with a MOSFET part and a gate pad part, the gate pad part includes: a low resistance semiconductor layer; a drift layer; a poly-silicon layer constituting a...
US20150349111 SEMICONDUCTOR DEVICE  
A semiconductor device includes a drift region of a first conductivity type, a channel forming region of a second conductivity type that is selectively provided in a first main surface of the...
US20150349110 MOSFET HAVING DUAL-GATE CELLS WITH AN INTEGRATED CHANNEL DIODE  
A semiconductor device includes MOSFET cells having a drift region of a first conductivity type. A first and second active area trench are in the drift region. A split gate uses the active...
US20150349070 SEMICONDUCTOR DEVICE  
A semiconductor device is disclosed. The semiconductor comprises a field effect transistor (FET) provided in a substrate, the FET including a plurality of gates, sources, and drains each extending...
US20150349058 SEMICONDUCTOR DEVICE  
A semiconductor device includes a pillar-shaped semiconductor layer and a sidewall having a laminated structure. The laminated structure includes an insulating film and silicon, and the laminated...
US20150349052 STRUCTURE FOR HIGH VOLTAGE DEVICE AND CORRESPONDING INTEGRATION PROCESS  
An embodiment of a structure for a high voltage device of the type which comprises at least a semiconductor substrate being covered by an epitaxial layer of a first type of conductivity, wherein a...
US20150348864 Connectable Package Extender for Semiconductor Device Package  
A semiconductor packaging system includes a semiconductor device package having a semiconductor chip with two or more terminals and a protective structure encapsulating and electrically insulating...
US20150348848 SELF-ALIGNED NANOWIRE FORMATION USING DOUBLE PATTERNING  
A method includes forming a pattern-reservation layer over a semiconductor substrate. The semiconductor substrate has a major surface. A first self-aligned multi-patterning process is performed to...
US20150348796 Nano Wire Structure and Method for Fabricating the Same  
A device comprises a first group of nanowires having a first pattern, a second group of nanowires having a second pattern, a third group of nanowires having a third pattern and a fourth group of...
US20150340495 VERTICAL COMPOUND SEMICONDUCTOR FIELD EFFECT TRANSISTOR ON A GROUP IV SEMICONDUCTOR SUBSTRATE  
Group IV semiconductor devices can be formed on a semiconductor-on-insulator substrate including a handle substrate containing a group IV semiconductor material. A cavity is formed to physically...
US20150340435 Multi-chip Package Module And A Doped Polysilicon Trench For Isolation And Connection  
A circuit module comprises a die attach pad with a surface and a plurality of leads surrounding the surface. A nonconductive adhesive is on the surface. A plurality of electronic circuit dies are...
US20150340376 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME  
According to example embodiments, a three-dimensional semiconductor device including a substrate with cell and connection regions, gate electrodes stacked on the cell region, a vertical channel...
US20150340360 LATERAL TRANSISTORS AND METHODS WITH LOW-VOLTAGE-DROP SHUNT TO BODY DIODE  
Methods and systems for power semiconductor devices integrating multiple quasi-vertical transistors on a single chip. Multiple power transistors (or active regions) are paralleled, but one...
US20150340301 SUBSTRATELESS POWER DEVICE PACKAGES  
A vertical conductive power semiconductor device may include a substrate with a top metal layer located on a top surface of the substrate, solder bumps deposited on top of the top metal layer, and...
US20150333174 SEMICONDUCTOR DEVICE WITH TERMINATION STRUCTURE FOR POWER MOSFET APPLICATIONS  
A semiconductor device may have an active device region containing a plurality of active devices and a termination structure that surrounds the active device region. The termination structure...
US20150333170 LATERAL POWER DEVICE HAVING LOW SPECIFIC ON-RESISTANCE AND USING HIGH-DIELECTRIC CONSTANT SOCKET STRUCTURE AND MANUFACTURING METHOD THEREFOR  
Provided is a lateral power device having low specific ON-resistance and using a high-dielectric constant socket structure and a manufacturing method therefor, which relate to semiconductor power...
US20150333169 SEMICONDUCTOR DEVICE WITH COMPENSATION STRUCTURE  
A semiconductor device includes a semiconductor body, which includes transistor cells and a drift zone between a drain layer and the transistor cells. The drift zone includes a compensation...
US20150333168 SEMICONDUCTOR DEVICE WITH FIELD DIELECTRIC IN AN EDGE AREA  
A semiconductor device includes a semiconductor body with transistor cells arranged in an active area and absent in an edge area between the active area and a side surface. A field dielectric...
US20150333152 VERTICAL STRUCTURE AND METHOD OF FORMING THE SAME  
According to an exemplary embodiment, a method of forming a vertical structure is provided. The method includes the following operations: providing a substrate; providing the vertical structure...
US20150333134 Semiconductor Component with a Monocrystalline Semiconductor Region Arranged in a Via Region  
A MOS transistor semiconductor component includes a semiconductor body with first and second surfaces, a first contact electrode on the first surface, a second contact electrode on the second...
US20150333122 Vertical Nanowire Semiconductor Structures  
An example semiconductor structure comprises a first surface and at least one nanowire, the at least one nanowire being perpendicular to the first surface, wherein the first surface is defect-poor...
US20150325695 SEMICONDUCTOR APPARATUS, METHOD FOR FABRICATING THE SAME, AND VARIABLE RESISTIVE MEMORY DEVICE  
A semiconductor apparatus that includes a semiconductor substrate and a plurality of pillars formed in the semiconductor substrate. Each of the plurality of pillars includes a first pillar, and a...
US20150325691 SEMICONDUCTOR DEVICE  
In a semiconductor device provided with a MOSFET part and a gate pad part defined on a semiconductor substrate which is formed by laminating a low resistance semiconductor layer and a drift layer,...
US20150325665 METHOD FOR PRODUCING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE  
A method for producing a semiconductor device includes a first step of forming a fin-shaped semiconductor layer on a semiconductor substrate and forming a first insulating film around the...
US20150325640 PROCESS FOR MANUFACTURING A SEMICONDUCTOR POWER DEVICE COMPRISING CHARGE-BALANCE COLUMN STRUCTURES AND RESPECTIVE DEVICE  
Process for manufacturing a semiconductor power device, wherein a trench is formed in a semiconductor body having a first conductivity type; the trench is annealed for shaping purpose; and the...
US20150325588 SEMICONDUCTOR DEVICES  
A semiconductor device includes a lower insulation layer, a plurality of base layer patterns separated from each other on the lower insulation layer, a separation layer pattern between the base...
US20150318393 METHOD FOR PRODUCING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE  
A semiconductor-device production method includes a first step of forming a fin-shaped semiconductor layer on a semiconductor substrate and forming a first insulating film around the fin-shaped...
US20150318392 SEMICONDUCTOR DEVICE  
According to one embodiment, a semiconductor device includes: a first region including: a first semiconductor layer; a first semiconductor region; a second semiconductor region; a third...
US20150318370 SEMICONDUCTOR DEVICE  
A semiconductor device includes a first planar semiconductor (e.g., silicon) layer, first and second pillar-shaped semiconductor (e.g., silicon) layers, a first gate insulating film, a first gate...
US20150318350 SEMICONDUCTOR DEVICE HAVING VERTICAL CHANNELS AND METHOD OF MANUFACTURING THE SAME  
A method of manufacturing a semiconductor device which can prevent leakage current caused by gate electrodes intersecting element isolation layers in a major axis of an active region, and which...
US20150318346 SEMICONDUCTOR DEVICE WITH VOLTAGE-SUSTAINING REGION CONSTRUCTED BY SEMICONDUCTOR AND INSULATOR CONTAINING CONDUCTIVE REGIONS  
A semiconductor device has at least a cell between two opposite main surfaces. Each cell has a first device feature region contacted with the first main surface and a second device feature region...
US20150318290 MEMORY DEVICE AND MANUFACTURING METHOD THEREOF  
A memory device includes an array of memory cells. At least one of the memory cells includes a plurality of transistors with vertical-gate-all-around configurations and a plurality of active...
US20150318289 MEMORY DEVICE AND MANUFACTURING METHOD THEREOF  
A memory device includes a plurality of memory cells At least one of the memory cells includes a plurality of transistors with vertical-gate-all-around configurations and a plurality of active...
US20150318288 VERTICAL TRANSISTOR STATIC RANDOM ACCESS MEMORY CELL  
Various methods of forming a vertical static random access memory cell and the resulting devices are disclosed. One method includes forming a plurality of pillars of semiconductor material on a...
US20150311334 SEMICONDUCTOR DEVICE  
A semiconductor device may include a drift layer having a first conductivity-type; a body region having a second conductivity-type and disposed on the drift layer; first semiconductor regions...
US20150311255 VARIABLE RESISTIVE MEMORY DEVICE INCLUDING VERTICAL CHANNEL PMOS TRANSISTOR AND METHOD OF MANUFACTURING THE SAME  
A semiconductor device having a vertical channel, a variable resistive memory device including the same, and a method of manufacturing the same are provided. The semiconductor device having a...
US20150303300 VERTICAL MOS SEMICONDUCTOR DEVICE FOR HIGH-FREQUENCY APPLICATIONS, AND RELATED MANUFACTURING PROCESS  
A MOS semiconductor device of a vertical type has: a functional layer, having a first type of conductivity; gate structures, which are formed above the functional layer and have a region of...
US20150303298 Semiconductor Device and Super Junction Semiconductor Device Having Semiconductor Mesas  
A semiconductor device includes semiconductor mesas of a first conductivity type extending between a first surface and a bottom plane of a semiconductor portion, and a semiconductor structure of a...