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US20080054318 Golf bag with a carrying system, a lockable stand system, and a recessed stand system  
A golf bag is provided including a carrying system having two members attached to a surface of the golf bag and arranged to form an “X” pattern. A casing is affixed to the golf bag and defines a...
US20150108326 IMPROVED FILL FACTOR OPTO-SENSITIVE DEVICE  
An opto-sensitive device, a pixel configured for use in an opto-sensitive device, and a method of operating an opto-sensitive device are disclosed. The opto-sensitive device illustratively...
US20150090863 Stacked Photodiodes for Extended Dynamic Range and Low Light Color Discrimination  
The invention provides the art with novel image sensor pixel designs comprising stacked, pinned photodiodes. The stacked pinned photodiodes provide pixels with greatly increased dynamic range. The...
US20110226936 PIXELS, IMAGERS AND RELATED FABRICATION METHODS  
Pixels, imagers and related fabrication methods are described. The described methods result in cross-talk reduction in imagers and related devices by generating depletion regions. The devices can...
US20090078974 Solid-state image capturing device; manufacturing method for the solid-state image capturing device; and electronic information device  
A solid-state image capturing device is provided with a plurality of light receiving elements arranged on a surface section of a semiconductor substrate, a color filter of each color for each of...
US20090146069 Reduced cost pixel design for flat panel x-ray imager  
A pixel structure for a flat panel detector is constructed in which the diode silicon and the FET silicon are simultaneously etched to form isolated structures (array photodiodes, I/O elements,...
US20090050906 Photo Detector and a Display Panel having the Same  
A photo detector has a sensing TFT (thin film transistor) and a photodiode. The sensing TFT has a gate and a base. The photodiode has an intrinsic semiconductor region electrically connected to...
US20150255497 SHARED ACTIVE PIXEL SENSOR  
A shared active pixel sensor with a shared photodiode, a shared sense node, a transfer gate, a shared reset gate and a shared source follower gate is disclosed. A shared photodiode includes at...
US20120037967 CMOS PIXEL SENSOR CELLS WITH POLY SPACER TRANSFER GATES AND METHODS OF MANUFACTURE  
CMOS pixel sensor cells with spacer transfer gates and methods of manufacture are provided herein. The method includes forming a middle gate structure on a gate dielectric. The method further...
US20140027827 GROUND CONTACT STRUCTURE FOR A LOW DARK CURRENT CMOS PIXEL CELL  
Pixel array structures to provide a ground contact for a CMOS pixel cell. In an embodiment, an active area of a pixel cell includes a photodiode disposed in a first portion of an active area,...
US20100176276 PENINSULA TRANSFER GATE IN A CMOS PIXEL  
A pinned photodiode structure with peninsula-shaped transfer gate which decrease the occurrence of a potential barrier between the photodiode and the floating drain, prevents loss of full well...
US20150028402 PHOTODIODE GATE DIELECTRIC PROTECTION LAYER  
The present disclosure relates to a method the present disclosure relates to an active pixel sensor having a gate dielectric protection layer that reduces damage to an underlying gate dielectric...
US20090127597 Photodiode Structure  
A photodiode structure including a semiconductor of a first conductivity type, the semiconductor having a main surface, a first well formed in the semiconductor at the main surface thereof, the...
US20090321800 SEMICONDUCTOR DEVICE INCLUDING SOLID STATE IMAGE PICKUP DEVICE, AND PORTABLE ELECTRONIC APPARATUS  
A semiconductor device includes: a plurality of pixel units disposed in a matrix shape, each of the plurality of pixel units including: a first photoelectric conversion element for converting...
US20120080732 ISOLATION STRUCTURES FOR GLOBAL SHUTTER IMAGER PIXEL, METHODS OF MANUFACTURE AND DESIGN STRUCTURES  
Pixel sensor cells, e.g., CMOS optical imagers, methods of manufacturing and design structures are provided with isolation structures that prevent carrier drift to diffusion regions. The pixel...
US20150041851 CIS Image Sensors with Epitaxy Layers and Methods for Forming the Same  
A method includes performing a first epitaxy to grow a first epitaxy layer of a first conductivity type, and performing a second epitaxy to grow a second epitaxy layer of a second conductivity...
US20150069476 Engineering Induced Tunable Electrostatic Effect  
Backside illuminated sensors and methods of manufacture are described. Specifically, a backside illuminated sensor with a dipole modulating layer near the photodiode is described.
US20080017901 Solid-state imaging device and control system  
A solid-state imaging device is provided. The solid-state imaging device includes an imaging region having a plurality of pixels arranged on a semiconductor substrate, in which each of the pixels...
US20130001661 HIGH FULL-WELL CAPACITY PIXEL WITH GRADED PHOTODETECTOR IMPLANT  
Embodiments of a process for forming a photodetector region in a CMOS pixel by dopant implantation, the process comprising masking a photodetector area of a surface of a substrate for formation of...
US20110241090 HIGH FULL-WELL CAPACITY PIXEL WITH GRADED PHOTODETECTOR IMPLANT  
Embodiments of a process for forming a photodetector region in a CMOS pixel by dopant implantation, the process comprising masking a photodetector area of a surface of a substrate for formation of...
US20140035012 LIGHT SENSOR HAVING IR CUT INTERFERENCE FILTER WITH COLOR FILTER INTEGRATED ON-CHIP  
Techniques are described to furnish a light sensor that includes a patterned IR interference filter integrated with a patterned color pass filter. In one or more implementations, the light sensor...
US20070063234 Solid-state imaging device, production method thereof and camera  
A solid-state imaging device and the production method capable of effectively suppressing color mixture between sensor portions, and a camera provided with the solid-state imaging device are...
US20090256225 SOLID-STATE IMAGE CAPTURING DEVICE, MANUFACTURING METHOD OF THE SOLID-STATE IMAGE CAPTURING DEVICE, AND ELECTRONIC INFORMATION DEVICE  
A solid-state image capturing device according to the present invention includes: a photoelectrical conversion section formed in a semiconductor substrate or in a substrate area provided on a...
US20080197387 Solid-State imaging device and camera  
A solid-state imaging device is provided. The solid-state imaging device includes: pixels arrayed; a photoelectric conversion element in each of the pixels; a read transistor for reading electric...
US20140211053 SOLID-STATE IMAGING DEVICE AND ELECTRONIC APPARATUS  
A solid-state imaging device includes a pixel region in which shared pixels which share pixel transistors in a plurality of photoelectric conversion portions are two-dimensionally arranged. The...
US20070069260 Photodetector structure for improved collection efficiency  
An image sensor with an image area having a plurality of photodetectors of a first conductivity type includes a substrate of the second conductivity type; a first layer of the first conductivity...
US20070131992 Multiple photosensor pixel image sensor  
A color multiple sensor pixel image sensor includes multiple photo-sensing devices, a combined photosensing and charge storage device, and multiple triggering switches. Each of the multiple...
US20090041406 INTEGRATED CIRCUIT INCLUDING NON-PLANAR STRUCTURE AND WAVEGUIDE  
One embodiment provides an integrated circuit including a first non-planar structure and a waveguide configured to provide electromagnetic waves to the first non-planar structure. The first...
US20120205731 SINGLE PHOTON AVALANCHE DIODES  
A CMOS single photon avalanche diode (SPAD) design uses conventional, or at least known, CMOS processes to produce a device having a breakdown region in which the main p-n junction is formed of a...
US20090014762 BACK-ILLUMINATED TYPE SOLID-STATE IMAGE PICKUP DEVICE AND CAMERA MODULE USING THE SAME  
The present invention provides a solid-state image pickup device including an image pickup pixel section which is provided on a semiconductor substrate and in which a plurality of pixels each...
US20050167708 Optimized photodiode process for improved transfer gate leakage  
An image sensing circuit and method is disclosed, wherein a photodiode is formed in a substrate through a series of angled implants. The photodiode is formed by a first, second and third implant,...
US20080277702 SOLID-STATE IMAGING DEVICE AND CAMERA HAVING THE SAME  
Provided is a solid-state imaging device including unit pixels, wherein the unit pixels include two kinds of unit pixels including a first unit pixel and a second unit pixel that are formed on a...
US20080185619 PINNED PHOTODIODE CMOS PIXEL SENSOR  
A multicolor CMOS pixel sensor formed in a p-type semiconductor region includes a first detector formed from an n-type region of semiconductor material located near the surface of the p-type...
US20150054042 PHOTODIODE OF HIGH QUANTUM EFFICIENCY  
A photodiode includes at least one central pad arranged on a light-receiving surface of a photodiode semiconductor substrate. The pad is made of a first material and includes lateral sidewalls...
US20140299925 CMOS IMAGE SENSOR WITH RESET SHIELD LINE  
Techniques and mechanisms to improve potential well characteristics in a pixel cell. In an embodiment, a coupling portion of a pixel cell couples a reset transistor of the pixel cell to a floating...
US20130082313 CMOS IMAGE SENSOR WITH RESET SHIELD LINE  
Techniques and mechanisms to improve potential well characteristics in a pixel cell. In an embodiment, a coupling portion of a pixel cell couples a reset transistor of the pixel cell to a floating...
US20080079044 PHOTO DETECTING APPARATUS  
In a photo detecting apparatus, a first capacitance is caused by a photo detecting element and the first capacitance is charged or discharged by current flowing through the photo detecting...
US20080290383 CMOS IMAGING DEVICE COMPRISING A MICROLENS ARRAY EXHIBITING A HIGH FILLING RATE  
A CMOS imager includes a photosite array and a microlens array. The microlens array comprises microlenses of a first type and microlenses of a second type, the microlenses of first type being...
US20080149976 VERTICAL TYPE CMOS IAMGE SENSOR AND METHOD OF MANUFACTURING THE SAME  
A vertical type CMOS image sensor and a method of manufacturing the same including a P+-type red photodiode formed in a semiconductor substrate, a first silicon epilayer formed over the...
US20080128769 Photodiodes and image sensors including the same  
Example embodiments may provide a photodiode formed of semiconductor silicide and/or an image sensor using a photodiode formed of semiconductor silicide. The photodiode may have a p-n junction...
US20150162369 Single-Poly Floating Gate Solid State Direct Radiation Sensor Using STI Dielectric And Isolated PWells  
Solid state radiation sensors include a floating gate (FG) structure having a large control capacitor region disposed on thick dielectric portion over a control gate (CG) implemented by an...
US20120248515 STRESS ENGINEERING TO REDUCE DARK CURRENT OF CMOS IMAGE SENSORS  
This disclosure relates to an active pixel cell including a shallow trench isolation (STI) structure. The active pixel cell further includes a photodiode neighboring the STI structure, where a...
US20110024809 RING PIXEL FOR CMOS IMAGERS  
A CMOS pixel is disclosed. The CMOS pixel includes a semiconductor substrate; a sense node formed in the semiconductor substrate and positioned substantially in the center of the CMOS pixel; a...
US20100019295 SINGLE PHOTON AVALANCHE DIODES  
A CMOS single photon avalanche diode (SPAD) design uses conventional, or at least known, CMOS processes to produce a device having a breakdown region in which the main p-n junction is formed of a...
US20090303371 SOLID-STATE IMAGING DEVICE, DRIVE METHOD THEREOF AND ELECTRONIC APPARATUS  
A solid-state imaging device includes: plural photodiodes formed in different depths in a unit pixel area of a substrate; and plural vertical transistors formed in the depth direction from one...
US20110248147 DUAL CONVERSION GAIN GATE AND CAPACITOR COMBINATION  
An imaging device comprising a plurality of photosensors, a shared diffusion region for receiving charge generated by the photosensors, and a dual conversion gain element that can be selectively...
US20100006971 IMAGE PICKUP DEVICE AND CAMERA  
An object is to provide a solid state image pickup device and a camera which do not worsen a sensor performance in terms of an optical property, a saturated charge amount and the like. A solid...
US20090283807 Anti-Reflection Structures For CMOS Image Sensors  
Optical structures having an array of protuberances between two layers having different refractive indices are provided. The array of protuberances has vertical and lateral dimensions less than...
US20090283808 Photo Sensor  
A photo sensor has an insulator layer for covering a diode stack, and the insulator layer is made of photoresist to reduce a side leakage current.
US20110260223 STRESS ENGINEERING TO REDUCE DARK CURRENT OF CMOS IMAGE SENSORS  
The active pixel cell structures and methods of preparing such structures described above enable reduction of dark current and white cell counts for active pixel cells. The process of preparing...