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US20140191299 Dual Damascene Metal Gate  
A method for fabricating a dual damascene metal gate includes forming a dummy gate onto a substrate, disposing a protective layer on the substrate and the dummy gate, and growing an expanding...
US20110186915 REPLACEMENT GATE APPROACH BASED ON A REVERSE OFFSET SPACER APPLIED PRIOR TO WORK FUNCTION METAL DEPOSITION  
In a replacement gate approach, a spacer may be formed in the gate opening after the removal of the placeholder material, thereby providing a superior cross-sectional shape upon forming any...
US20110073920 SUPERIOR FILL CONDITIONS IN A REPLACEMENT GATE APPROACH BY CORNER ROUNDING BASED ON A SACRIFICIAL FILL MATERIAL  
In a replacement gate approach, a top area of a gate opening may receive a superior cross-sectional shape on the basis of a material erosion process, wherein a sacrificial material may protect...
US20120104469 REPLACEMENT GATE MOSFET WITH A HIGH PERFORMANCE GATE ELECTRODE  
In a replacement gate scheme, a continuous material layer is deposited on a bottom surface and a sidewall surface in a gate cavity. A vertical portion of the continuous material layer is removed...
US20140306273 STRUCTURE OF METAL GATE STRUCTURE AND MANUFACTURING METHOD OF THE SAME  
A manufacturing method of a metal gate structure is provided. First, a substrate covered by an interlayer dielectric is provided. A gate trench is formed in the interlayer dielectric, wherein a...
US20130328111 RECESSING AND CAPPING OF GATE STRUCTURES WITH VARYING METAL COMPOSITIONS  
A method for recessing and capping metal gate structures is disclosed. Embodiments include: forming a dummy gate electrode on a substrate; forming a hard mask over the dummy gate electrode;...
US20140246712 INTEGRATED CIRCUIT METAL GATE STRUCTURE HAVING TAPERED PROFILE  
A device having a gate where the profile of the gate provides a first width at a top region and a second width at a bottom region is described. The gate may include tapered sidewalls. The gate may...
US20130307033 Borderless Contact For An Aluminum-Containing Gate  
An aluminum-containing material is employed to form replacement gate electrodes. A contact-level dielectric material layer is formed above a planarization dielectric layer in which the replacement...
US20120018784 Method for Forming a Nickelsilicide FUSI Gate  
Ni3Si2 FUSI gates can be formed inter alia by further reaction of NiSi/Ni2Si gate stacks. Ni3Si2 behaves similarly to NiSi in terms of work function values, and of modulation with dopants on SiO2,...
US20130214335 Replacement Gate Approach for High-K Metal Gate Stacks by Using a Multi-Layer Contact Level  
In a replacement gate approach, the dielectric material for laterally encapsulating the gate electrode structures may be provided in the form of a first interlayer dielectric material having...
US20050173741 Top drain MOSFET with thickened oxide at trench top  
A top drain MOSFET has active trenches with an enlarged width at the top of each trench which has a thicker oxide than the gate oxide adjacent the channel region. The thicker oxide at the top of...
US20110079828 METAL GATE FET HAVING REDUCED THRESHOLD VOLTAGE ROLL-OFF  
A structure and method to create a metal gate having reduced threshold voltage roll-off. A method includes: forming a gate dielectric material on a substrate; forming a gate electrode material on...
US20120080729 FIELD EFFECT TRANSISTOR  
A lateral field-effect transistor capable of improving switching speed and reducing operationally defective products is provided. A gate wiring has a base, a plurality of fingers protruding from...
US20150008491 Metal Gate Structure  
A device comprises a metal gate structure in a trench and over a substrate, wherein the gate structure comprises a first metal sidewall in the trench, wherein the first metal sidewall becomes...
US20120231239 INTEGRATED COLOR MASK  
The invention relates to a process for forming a structure comprising providing a support, coating one side of said support with a colored mask, coating a layer photopatternable by visible light,...
US20110079830 METAL GATE STRUCTURE AND METHOD OF MANUFACTURING SAME  
A method of manufacturing a metal gate structure includes providing a substrate (110) having formed thereon a gate dielectric (120), a work function metal (130) adjacent to the gate dielectric,...
US20120126295 BORDERLESS CONTACT FOR REPLACEMENT GATE EMPLOYING SELECTIVE DEPOSITION  
A self-aligned gate cap dielectric can be employed to form a self-aligned contact to a diffusion region, while preventing electrical short with a gate conductor due to overlay variations. In one...
US20110298017 REPLACEMENT GATE MOSFET WITH SELF-ALIGNED DIFFUSION CONTACT  
A replacement gate field effect transistor includes at least one self-aligned contact that overlies a portion of a dielectric gate cap. A replacement gate stack is formed in a cavity formed by...
US20130181259 STEP-LIKE SPACER PROFILE  
Interlayer dielectric gap fill processes are enhanced by forming gate spacers with a step-like or tapered profile. Embodiments include forming a gate electrode on a substrate, depositing a spacer...
US20120319179 METAL GATE AND FABRICATION METHOD THEREOF  
A metal gate includes a substrate, a gate dielectric layer, a work function metal layer, an aluminum nitride layer and a stop layer. The gate dielectric layer is located on the substrate. The work...
US20150021672 CONTACT FOR HIGH-K METAL GATE DEVICE  
An integrated circuit having an improved gate contact and a method of making the circuit are provided. In an exemplary embodiment, the method includes receiving a substrate. The substrate includes...
US20100320509 Method for forming and integrating metal gate transistors having self-aligned contacts and related structure  
According to one exemplary embodiment, a method for forming at least one metal gate transistor with a self-aligned source/drain contact includes forming a metal gate over a substrate. The method...
US20140299924 FORMATION OF THE DIELECTRIC CAP LAYER FOR A REPLACEMENT GATE STRUCTURE  
Gate to contact shorts are reduced by forming dielectric caps in replaced gate structures. Embodiments include forming a replaced gate structure on a substrate, the replaced gate structure...
US20130187203 FORMATION OF THE DIELECTRIC CAP LAYER FOR A REPLACEMENT GATE STRUCTURE  
Gate to contact shorts are reduced by forming dielectric caps in replaced gate structures. Embodiments include forming a replaced gate structure on a substrate, the replaced gate structure...
US20150008490 Fluctuation Resistant FinFET  
This improved, fluctuation resistant FinFET, with a doped core and lightly doped epitaxial channel region between that core and the gate structure, is confined to the active-gate span because it...
US20130256763 LOW EXTENSION DOSE IMPLANTS IN SRAM FABRICATION  
A static random access memory fabrication array includes at least one p-type field effect transistor, including a gate stack and isolating spacers forming a gate having a gate length Lgate and an...
US20140346577 ELECTRONIC DEVICE WITH ASYMMETRIC GATE STRAIN  
The use of strained gate electrodes in integrated circuits results in a transistor having improved carrier mobility, improved drive characteristics, and reduced source drain junction leakage. The...
US20120104476 ELECTRONIC DEVICE WITH ASYMMETRIC GATE STRAIN  
The use of strained gate electrodes in integrated circuits results in a transistor having improved carrier mobility, improved drive characteristics, and reduced source drain junction leakage. The...
US20110140181 Removal of Masking Material  
Methods for removing a masking material, for example, a photoresist, and electronic devices formed by removing a masking material are presented. For example, a method for removing a masking...
US20110127590 INCREASING STABILITY OF A HIGH-K GATE DIELECTRIC OF A HIGH-K GATE STACK BY AN OXYGEN RICH TITANIUM NITRIDE CAP LAYER  
In a replacement gate approach, the oxygen contents of a cap material may be increased, thereby providing more stable characteristics of the cap material itself and of the high-k dielectric...
US20120280290 LOCAL INTERCONNECT STRUCTURE SELF-ALIGNED TO GATE STRUCTURE  
A common cut mask is employed to define a gate pattern and a local interconnect pattern so that local interconnect structures and gate structures are formed with zero overlay variation relative to...
US20120313153 SYSTEM AND METHOD OF PLATING CONDUCTIVE GATE CONTACTS ON METAL GATES FOR SELF-ALIGNED CONTACT INTERCONNECTIONS  
According to one embodiment of the invention, the gate contact is formed by a selective deposition on the gate electrode. One acceptable technique for the selective deposition is by plating....
US20140070282 SELF-ALIGNED CONTACTS  
Self-aligned contacts in a metal gate structure and methods of manufacture are disclosed herein. The method includes forming a metal gate structure having a sidewall structure. The method further...
US20140191295 DUMMY GATE INTERCONNECT FOR SEMICONDUCTOR DEVICE  
A method of forming a semiconductor device comprising a dummy gate interconnect includes forming a dummy gate on a substrate, the dummy gate comprising a dummy gate metal layer located on the...
US20080179638 GAP FILL FOR UNDERLAPPED DUAL STRESS LINERS  
A gap fill nitride is formed in an underlapping region between a first semiconductor area with a first stress liner and a second semiconductor area with a second stress liner without plugging...
US20120086056 Superior Integrity of a High-K Gate Stack by Forming a Controlled Undercut on the Basis of a Wet Chemistry  
In sophisticated semiconductor devices, the encapsulation of sensitive gate materials, such as a high-k dielectric material and a metal-containing electrode material, which are provided in an...
US20140103404 REPLACEMENT GATE WITH AN INNER DIELECTRIC SPACER  
After formation of source and drain regions and a planarization dielectric layer, a disposable gate structure is removed to form a gate cavity. A gate dielectric and a lower gate electrode are...
US20120256240 METHOD FOR INCREASING PENETRATION DEPTH OF DRAIN AND SOURCE IMPLANTATION SPECIES FOR A GIVEN GATE HEIGHT  
The thickness of drain and source areas may be reduced by a cavity etch used for refilling the cavities with an appropriate semiconductor material, wherein, prior to the epitaxial growth, an...
US20110147858 METAL GATE STRUCTURE OF A FIELD EFFECT TRANSISTOR  
The invention relates to integrated circuit fabrication, and more particularly to a Field Effect Transistor with a low resistance metal gate electrode. An exemplary structure for a gate electrode...
US20100258848 COMPENSATED GATE MISFET AND METHOD FOR FABRICATING THE SAME  
A MISFET, such as a GaN transistor, with low gate leakage. In one embodiment, the gate leakage is reduced with a compensated GaN layer below the gate contact and above the barrier layer. In...
US20110147812 POLISH TO REMOVE TOPOGRAPHY IN SACRIFICIAL GATE LAYER PRIOR TO GATE PATTERNING  
Techniques are disclosed for fabricating FinFET transistors (e.g., double-gate, trigate, etc). A sacrificial gate material (such as polysilicon or other suitable material) is deposited on fin...
US20130146895 PINCH-OFF CONTROL OF GATE EDGE DISLOCATION  
The embodiments of processes and structures described provide mechanisms for improving the mobility of carriers. A dislocation is formed in a source or drain region between gate structures or...
US20120286338 CONTROL OF FLATBAND VOLTAGES AND THRESHOLD VOLTAGES IN HIGH-K METAL GATE STACKS AND STRUCTURES FOR CMOS DEVICES  
A high-k metal gate stack and structures for CMOS devices and a method for forming the devices. The gate stack includes a high-k dielectric having a high dielectric constant greater than...
US20120018817 METHOD FOR FABRICATING A GATE STRUCTURE  
An method of fabricating the gate structure comprises: sequentially depositing and patterning a dummy oxide layer and a dummy gate electrode layer on a substrate; surrounding the dummy oxide layer...
US20130187243 METHOD, STRUCTURE AND DESIGN STRUCTURE FOR CUSTOMIZING HISTORY EFFECTS OF SOI CIRCUITS  
A design structure is embodied in a machine readable medium for designing, manufacturing, or testing a design. The design structure includes a high-leakage dielectric formed over an active region...
US20150162190 METHOD FOR FORMING SPACERS FOR A TRANSISTOR GATE  
A method for forming spacers of a transistor gate having an active layer surmounted by the gate, including forming a porous layer covering the gate and having a dielectric constant equal to or...
US20150060947 Transistor with Diamond Gate  
A field effect transistor having a diamond gate electrode and a process for forming the same. In some embodiments, the device is an AlGaN/GaN high-electron-mobility transistor (HEMT). The diamond...
US20140357974 NANO-PILLAR TRANSISTOR FABRICATION AND USE  
A field effect nano-pillar transistor has a pillar shaped gate element incorporating a biomimitec portion that provides various advantages over prior art devices. The small size of the nano-pillar...
US20140070286 NANO-PILLAR TRANSISTOR FABRICATION AND USE  
A field effect nano-pillar transistor has a pillar shaped gate element incorporating a biomimitec portion that provides various advantages over prior art devices. The small size of the nano-pillar...
US20130292744 INTEGRATED CIRCUIT AND METHOD FOR FABRICATING THE SAME HAVING A REPLACEMENT GATE STRUCTURE  
An integrated circuit includes a first replacement gate structure. The first replacement gate structure includes a layer of a first barrier material that is less than 20 Å in thickness and a layer...