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US20090303638 |
MAGNETORESISTANCE DEVICE
A magnetoresistance device has a channel extending between first and second ends in a first direction comprising non-ferromagnetic semiconducting material, such as silicon, a plurality of leads...
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US20090303639 |
MAGNETORESISTANCE DEVICE
A device capable of exhibiting the extraordinary magnetoresistance (EMR) effect includes an elongate channel formed of silicon. A conductor comprising heavily doped silicon is connected to the...
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US20090273009 |
Integrated CMOS porous sensor
A single chip wireless sensor ( 1 ) comprises a microcontroller ( 2 ) connected by a transmit/receive interface ( 3 ) to a wireless antenna ( 4 ). The microcontroller ( 2 ) is also connected to an...
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US20090218601 |
TEMPERATURE MONITORING IN A SEMICONDUCTOR DEVICE BY USING AN PN JUNCTION BASED ON SILICON/GERMANIUM MATERIAL
By incorporating germanium material into thermal sensing diode structures, the sensitivity thereof may be significantly increased. In some illustrative embodiments, the process for incorporating...
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US20090121259 |
PAIRED MAGNETIC TUNNEL JUNCTION TO A SEMICONDUCTOR FIELD-EFFECT TRANSISTOR
A magnetic tunnel junction paired to a semiconductor field-effect transistor is described. In one embodiment, there is a circuit that comprises at least one semiconductor field-effect transistor...
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US20090090937 |
Unit pixels, image sensor containing unit pixels, and method of fabricating unit pixels
Example embodiments provide a unit pixel, an image sensor containing unit pixels, and a method of fabricating unit pixels. The unit pixel may include a semiconductor substrate, photoelectric...
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US20090066404 |
MOSFET WITH TEMPERATURE SENSE FACILITY
A transistor ( 1 ) has a FET ( 2 ) and a temperature sensing diode ( 4 ) integrated within it. Gate drive circuit ( 12 ) is arranged to switch off FET ( 2 ) and in this case biasing circuit ( 14 )...
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US20090057724 |
IMAGE SENSOR AND SENSOR UNIT
An image sensor includes a charge storage portion for storing and transferring signal charges, a first electrode for forming an electric field storing the signal charges in the charge storage...
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US20080315264 |
STRAIN-COMPENSATED FIELD EFFECT TRANSISTOR AND ASSOCIATED METHOD OF FORMING THE TRANSISTOR
Disclosed are embodiments of a field effect transistor (FET) having decreased drive current temperature sensitivity. Specifically, any temperature-dependent carrier mobility change in the FET...
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US20080164497 |
CIRCUIT HAVING A POWER TRANSISTOR AND A DRIVE CIRCUIT
A circuit having a power transistor and drive circuit is disclosed. One embodiment provides a drive terminal and a load path. The power transistor is integrated in a first semiconductor body. A...
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US20080121945 |
MAGNETIC SWITCHING ELEMENT AND A MAGNETIC MEMORY
A magnetic switching element includes a ferromagnetic layer which is substantially pinned in magnetization in one direction; and a magnetic semiconductor layer provided within a range where a...
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US20080093634 |
SILICON-ON-INSULATOR BASED RADIATION DETECTION DEVICE AND METHOD
Structures and a method for detecting ionizing radiation using silicon-on-insulator (SOI) technology are disclosed. In one embodiment, the invention includes a substrate having a buried insulator...
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