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US20140332842 PACKAGED OVERVOLTAGE PROTECTION CIRCUIT FOR TRIGGERING THYRISTORS  
In a first embodiment, an ultra-fast breakover diode has a turn on time TON that is less than 0.3 microseconds, where the forward breakover voltage is greater than +400 volts and varies less than...
US20150200168 ESD Clamp with a Layout-Alterable Trigger Voltage and a Holding Voltage Above the Supply Voltage  
An ESD device that includes a gate and an n-drain region isolated from the gate and formed at least partially within an n-well region, which in turn is formed at least partially within a deep...
US20130320396 MUTUAL BALLASTING MULTI-FINGER BIDIRECTIONAL ESD DEVICE  
An integrated circuit includes a bidirectional ESD device which has a plurality of parallel switch legs. Each switch leg includes a first current switch and a second current switch in a...
US20110180845 Electrostatic discharge (ESD) protection applying high voltage lightly doped drain (LDD) CMOS technologies  
An electrostatic discharge (ESD) protection circuit includes a triggering diode that includes a junction between a P-grade (PG) region and an N-well. The PG region has a dopant profile equivalent...
US20130307020 THYRISTOR COMPONENT  
The invention relates to a thyristor component, wherein a p-conductive trough (30) adjoins an n-conductive trough (20) at two opposite sides. Highly n-conductive areas (21, 23) and highly...
US20110006341 ESD PROTECTION ELEMENT  
An electrostatic discharge (ESD) protection element using an NPN bipolar transistor, includes: a trigger element connected at one end with a pad. The NPN bipolar transistor includes: a first base...
US20140284659 Transient Voltage Suppressor, Design and Process  
A transient voltage suppressor (TVS) device design compatible with normal IC wafer process is provided. Instead of a thick base that requires double-sided wafer processing, a much thinner base...
US20090206367 Design Structure and Method for a Silicon Controlled Rectifier (SCR) Structure for SOI Technology  
A design structure is embodied in a machine readable medium for designing, manufacturing, or testing a design. The design structure includes a P+-N body diode and an N+-P body diode. The P+-N body...
US20100301389 ESD PROTECTION STRUCTURE  
An electrostatic discharge protection structure includes a first vertical bipolar junction transistor; a second vertical bipolar junction transistor, wherein the second vertical bipolar junction...
US20110147794 STRUCTURE AND METHOD FOR A SILICON CONTROLLED RECTIFIER (SCR) STRUCTURE FOR SOI TECHNOLOGY  
A design structure is embodied in a machine readable medium for designing, manufacturing, or testing a design. The design structure includes a P+-N body diode and an N+-P body diode. The P+-N body...
US20090101938 Electrostatic Discharge Protection Circuit  
The present invention provides an electrostatic discharge (ESD) protection circuit with a silicon controlled rectifier (SCR) having a plurality of SCR fingers (SCRs) with the advantages to couple...
US20100320501 NON-SNAPBACK SCR FOR ELECTROSTATIC DISCHARGE PROTECTION  
An electrostatic discharge (ESD) protection device (11, 60, 80) coupled across input-output (I/O) (22) and common (23) terminals of a core circuit (24), comprises, first (70, 90) and second (72,...
US20130009207 VERTICAL NPNP STRUCTURE IN A TRIPLE WELL CMOS PROCESS  
A vertical NPNP structure fabricated using a triple well CMOS process, as well as methods of making the vertical NPNP structure, methods of providing electrostatic discharge (ESD) protection, and...
US20120126285 Vertical NPNP Structure In a Triple Well CMOS Process  
A vertical NPNP structure fabricated using a triple well CMOS process, as well as methods of making the vertical NPNP structure, methods of providing electrostatic discharge (ESD) protection, and...
US20110286135 Silicon Controlled Rectifier Based Electrostatic Discharge Protection Circuit With Integrated JFETS, Method Of Operation And Design Structure  
An enhanced turn-on time SCR based electrostatic discharge (ESD) protection circuit includes an integrated JFET, method of use and design structure. The enhanced turn-on time silicon controlled...
US20120007138 SMOKE-FREE ESD PROTECTION STRUCTURE USED IN INTEGRATED CIRCUIT DEVICES  
The present invention provides a smoke-free ESD protection structure used in integrated circuit devices. A JFET or n-channel MOS transistor is coupled between an I/O pad, and a transistor and...
US20090212321 Trench IGBT with trench gates underneath contact areas of protection diodes  
A trench PT IGBT (or NPT IGBT) having clamp diodes for ESD protection and prevention of shortage among gate, emitter and collector. The clamp diodes comprise multiple back-to-back Zener Diode...
US20070278515 Silicon controlled rectifier protection circuit  
In one embodiment, the present invention includes an apparatus having a protection circuit to provide protection from transient surges. The protection circuit may include a silicon controlled...
US20110186909 ESD PROTECTION CIRCUIT FOR RFID TAG  
An electrostatic discharge (ESD) protection circuit structure includes a dual directional silicon controlled rectifier (SCR) formed in a substrate. The SCR includes first and second P-wells...
US20110133247 Zener-Triggered SCR-Based Electrostatic Discharge Protection Devices For CDM And HBM Stress Conditions  
SCR device is modified to improve turn-on speed for CDM stress conditions. A zener diode is integrated inside SCR device to create an internal feedback and improve turn-on speed. The zener diode...
US20100044750 ELECTROSTATIC PROTECTION ELEMENT  
An electrostatic protection element relating to the present invention comprises a P-type semiconductor and an N-type first impurity layer provided in the semiconductor substrate. The first...
US20090189183 DUAL TRIGGERED SILICON CONTROLLED RECTIFIER  
The present invention provides a dual triggered silicon controlled rectifier (DTSCR) including: a semiconductor substrate, an N-well, a P-well, a first N+ diffusion region and a first P+ diffusion...
US20120037956 Circuit and Method for Power Clamp Triggered Dual SCR ESD Protection  
Circuit and method for RC power clamp triggered dual SCR ESD protection. In an integrated circuit, a protected pad is coupled to an upper SCR circuit and a lower SCR circuit; and both are coupled...
US20090250721 ELECTRICAL SURGE PROTECTIVE APPARATUS  
Disclosed is an electrical surge protective apparatus comprising: a base region containing impurities of a first conductivity type; a first semiconductor region containing impurities of a second...
US20110303948 ESD and EMC optimized HV-MOS Transistor  
Devices and circuits related to Electrostatic discharge (ESD) and Electromagnetic compatibility (EMC) are herein described. An ESD protection device is incorporated into a transistor in order to...
US20120091504 METHOD OF FORMING AN ESD PROTECTION DEVICE AND STRUCTURE THEREFOR  
In one embodiment, a bi-directional ESD device is formed to have a third harmonic at frequencies no less than about one gigahertz wherein the third harmonic has a magnitude that is no greater than...
US20060258067 Device for protecting against electrostatic discharge  
A device, for protecting against electrostatic discharge, structured as a PNPN junction, includes: first and second conductivity type regions formed in a substrate, contacting each other; a first...
US20090108289 DESIGN STRUCTURE FOR UNIFORM TRIGGERING OF MULTIFINGER SEMICONDUCTOR DEVICES WITH TUNABLE TRIGGER VOLTAGE  
A design structure for a circuit providing the same trigger voltage across the multiple fingers is provided, which comprises a data representing an external current injection source connected to...
US20120175672 ESD PROTECTION CIRCUIT  
An integrated circuit device provides electrostatic discharge (ESD) protection. In connection with various example embodiments, an ESD protection circuit includes a diode-type circuit having a p-n...
US20080179624 Semiconductor ESD device and method of making same  
A semiconductor device includes an ESD device region disposed within a semiconductor body of a first semiconductor type, an isolation region surrounding the ESD device region, a first doped region...
US20070069237 Systems for providing electrostatic discharge protection  
Systems for providing electrostatic discharge (ESD) protection. One of the Systems has a plurality of first-type thin film diode elements coupled to each other in series, and a plurality of...
US20090045436 LOCALIZED TRIGGER ESD PROTECTION DEVICE  
The present invention provides an ESD device to reduce the total triggering current without increasing the overshoot voltage. This is achieved by localizing the triggering current, such that the...
US20100065884 Electrostatic Discharge Diode  
The present invention relates to an electrostatic discharge diode. The electrostatic discharge diode according to exemplary embodiment of the present invention includes: an N-type well formed on a...
US20150228771 ELECTROSTATIC DISCHARGE PROTECTION STRUCTURE CAPABLE OF PREVENTING LATCH-UP ISSUE CAUSED BY UNEXPECTED NOISE  
An electrostatic discharge protection structure includes a first well, a second well disposed in the first well, a first and a second doped region disposed in the first well, a third and a fourth...
US20080121925 LOW VOLTAGE TRIGGERED SILICON CONTROLLED RECTIFIER  
Disclosed is a low voltage triggered silicon controlled rectifier (LVTSCR) . The LVTSCR includes a first-type semiconductor substrate; a second-type well formed in a predetermined region of the...
US20150060941 Electrostatic Discharge Protection Circuit  
A device comprises a high voltage N well and a high voltage P well over an N+ buried layer, a high voltage P-type implanted region in the high voltage N well, a first N+ region over the high...
US20080093624 Integrated Circuit ESD Protection  
A protective device in a semiconductor may comprise a substrate of a first conductivity type, an epitaxial layer formed on top of the substrate, a body area formed within the epitaxial layer of a...
US20120018778 ESD PROTECTION DEVICE WITH VERTICAL TRANSISTOR STRUCTURE  
A new ESD protection device with an integrated-circuit vertical transistor structure is disclosed, which includes a heavily doped p-type substrate (P+ substrate), a n-type well (N well) in the P+...
US20080217650 Semiconductor circuit including electrostatic discharge circuit having protection element and trigger transistor  
A semiconductor circuit includes, a first pad for a first power source, a second pad for a second power source, a third pad for an input/output signal, a protection element arranged between the...
US20100032714 Semiconductor device and protection circuit  
In a protection circuit of an input/output terminal I/O, three types of PNP bipolar transistors are included. In a first PNP type bipolar transistor 10A, the emitter thereof is connected to the...
US20120105389 ELECTROSTATIC PROTECTION ELEMENT  
A electrostatic protection element (101) includes: a substrate (1) of a first conductivity type; a first low-concentration diffusion region (2) of a second conductivity type and a second...
US20070120146 DIFFERENTIAL INPUT/OUTPUT DEVICE INCLUDING ELECTRO STATIC DISCHARGE (ESD) PROTECTION CIRCUIT  
A differential input/output device including an electro static discharge protection circuit is provided. The differential input/output device includes a P-type differential pair. The P-type...
US20140231869 Silicon Devices/Heatsinks Stack Assembly And A Method To Pull Apart A Faulty Silicon Device In Said Stack Assembly  
The invention concerns a silicon devices/heatsinks stack assembly and a method to pull apart a faulty silicon device in said stack assembly. Said silicon devices/heatsinks stack assembly comprises...
US20100155775 Design Structure and Method for an Electrostatic Discharge (ESD) Silicon Controlled Rectifier (SCR) Structure  
A design structure is embodied in a machine readable medium for designing, manufacturing, or testing a design. The design structure includes first and second silicon controlled rectifiers (SCRs)...
US20130087830 ELECTROSTATIC DISCHARGE (ESD) SILICON CONTROLLED RECTIFIER (SCR) STRUCTURE  
A structure includes first and second silicon controlled rectifiers (SCRs) formed in a substrate. The first and the second SCRs each include at least one component commonly shared between the...
US20110284925 ELECTROSTATIC DISCHARGE (ESD) SILICON CONTROLLED RECTIFIER (SCR) STRUCTURE  
A structure includes first and second silicon controlled rectifiers (SCRs) formed in a substrate. The first and the second SCRs each include at least one component commonly shared between the...
US20110248383 ELECTROSTATIC DISCHARGE (ESD) PROTECTION CIRCUIT  
An electrostatic discharge (ESD) protection circuit includes at least one bipolar transistor. At least one isolation structure is disposed in a substrate. The at least one isolation structure is...
US20090085061 HIGH-VOLTAGE SEMICONDUCTOR SWITCHING ELEMENT  
In a base region of a first conductivity type, at least one emitter region of a second conductivity type and at least one sense region of the second conductivity type, spaced away from the emitter...
US20100264457 ELECTROSTATIC DISCHARGE PROTECTION  
An electrostatic discharge (ESD) protection circuit for protecting an integrated circuit (IC) having a first voltage potential, a first power supply potential and a second power supply potential....
US20120104458 ISOLATED SCR ESD DEVICE  
The present invention discloses an isolated SCR ESD device, comprising: a substrate; a first well located in the substrate, which is floating and has a first conductivity type; a first high...

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