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US20090302308 |
GROUP III NITRIDE WHITE LIGHT EMITTING DIODE
A white-light emitting diode comprises an n-type semiconductor layer, one or more quantum well structures formed over the n-type semiconductor layer, a p-type semiconductor layer formed on the...
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US20090302307 |
LED Semiconductor Body
An LED semiconductor body includes a semiconductor layer sequence which comprises a quantum structure which is intended to produce radiation and comprises at least one quantum layer and at least...
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US20090299213 |
Nanobioelectronics
The present invention generally relates to nanobioelectronics and, in some cases, to circuits comprising nanoelectronic elements, such as nanotubes and/or nanowires, and biological components, such...
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US20090294757 |
Semiconductor Nanowire Vertical Device Architecture
The present invention relates to nanoscaled electronic devices with a vertical nanowire as a functional part. Contacts are arranged on the nanowire at different parts of the nanowire, for example...
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US20090289322 |
MEMORY DEVICES HAVING A CARBON NANOTUBE
In a memory device having a carbon nanotube and a method of manufacturing the same, the memory device includes a lower electrode, an upper electrode having a first void exposing a sidewall of a...
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US20090290407 |
Memory Cells, Memory Cell Constructions, and Memory Cell Programming Methods
Some embodiments include memory cells including a memory component having a first conductive material, a second conductive material, and an oxide material between the first conductive material and...
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US20090283748 |
SEMICONDUCTOR FOR USE IN HARSH ENVIRONMENTS
A gallium-nitride semiconductor apparatus may include an active region having one or more nitride-based barrier layers that are modulation-doped using a nitride-based doped layer. An active region...
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US20090283749 |
QUANTUM-WELL PHOTOELECTRIC DEVICE ASSEMBLED FROM NANOMEMBRANES
A quantum-well photoelectric device, such as a quantum cascade laser, is constructed of monocrystalline nanoscale membranes physically removed from a substrate and mechanically assembled into a stack.
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US20090283750 |
SUBSTRATE-FREE LIGHT EMITTING DIODE
A substrate-free light emitting diode (LED) including an epitaxy layer, a conductive supporting layer, and a first contact pad is provided. The epitaxy layer includes a first type doped...
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US20090272963 |
Surface Light Emitting Element
Provided is a surface light emitting element having a high productivity, a high light emission output and good response characteristics, as well as capable of suppressing an increase of a forward...
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US20090267051 |
Method of preparing quantum dot-inorganic matrix composites
A method for preparing a quantum dot-inorganic matrix composite includes preparing an inorganic matrix precursor solution containing one or more quantum dot precursors, spin-coating the precursor...
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US20090250686 |
METHOD FOR FABRICATION OF SEMIPOLAR (Al, In, Ga, B)N BASED LIGHT EMITTING DIODES
A yellow Light Emitting Diode (LED) with a peak emission wavelength in the range 560-580 nm is disclosed. The LED is grown on one or more III-nitride-based semipolar planes and an active layer of...
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US20090250688 |
MOLECULAR QUANTUM INTERFERENCE APPARATUS AND APPLICATIONS OF SAME
A molecular quantum interference device for use in molecular electronics. In one embodiment, the device includes a molecular quantum interference unit having a first terminal group and a second...
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US20090242872 |
DOUBLE QUANTUM WELL STRUCTURES FOR TRANSISTORS
Double quantum well structures for transistors are generally described. In one example, an apparatus includes a semiconductor substrate, one or more buffer layers coupled to the semiconductor...
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US20090236585 |
NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE, METHOD OF FABRICATING IT, AND SEMICONDUCTOR OPTICAL APPARATUS
A nitride semiconductor laser device has a nitride semiconductor substrate that includes a dislocation-concentrated region 102 and a wide low-dislocation region and that has the top surface...
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US20090230382 |
III-V semiconductor core-heteroshell nanocrystals
The present invention provides a core/multishell semiconductor nanocrystal comprising a core and multiple shells, which exhibits a type-I band offset and high photoluminescence quantum yield...
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US20090212278 |
CURRENT-INJECTING/TUNNELING LIGHT-EMITTING DEVICE AND METHOD
An apparatus and method for making it. Some embodiments include a light-emitting device having a light-emitting active region; a tunneling-barrier (TB) structure facing adjacent the active region;...
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US20090206324 |
DISLOCATION REMOVAL FROM A GROUP III-V FILM GROWN ON A SEMICONDUCTOR SUBSTRATE
Dislocation removal from a group III-V film grown on a semiconductor substrate is generally described. In one example, an apparatus includes a semiconductor substrate, a buffer film including a...
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US20090200539 |
Composite Nanorod-Based Structures for Generating Electricity
Composite nanorod-based structures for generating electricity are disclosed. One embodiment is an article of manufacture that includes a first layer with an array of nanowires and a dielectric...
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US20090200538 |
Group lll-V compound semiconductor and a method for producing the same
A Group III-V compound semiconductor includes an n-type layer, a p-type layer, a p-type layer represented by a formula In a Ga b Al c N, having a thickness of not less than 300 nm, and a multiple...
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US20090189145 |
Photodetectors, Photovoltaic Devices And Methods Of Making The Same
A photodetector includes a first layer, a second layer and a plurality of nanowires established between the first and second layers. At least some of the plurality of nanowires have a bandgap that...
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US20090179192 |
Nanowire-Based Semiconductor Device And Method Employing Removal Of Residual Carriers
A nanowire-based device and method employ removal of residual carriers. The nanowire-based device includes a semiconductor nanowire having a semiconductor junction, and a residual carrier sink. The...
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US20090175073 |
Nanostructure-Based Memory
Improved memory devices that include one or more nanostructures such as carbon nanotubes or other nanostructures, as well as systems and devices incorporating such improved memory devices, are...
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US20090173931 |
Methods of Making, Positioning and Orienting Nanostructures, Nanostructure Arrays and Nanostructure Devices
Nanostructure manufacturing methods and methods for assembling nanostructures into functional elements such as junctions, arrays and devices are provided. Systems for practicing the methods are...
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US20090174435 |
Monolithically-Integrated Graphene-Nano-Ribbon (GNR) Devices, Interconnects and Circuits
The invention discloses new and advantageous uses for carbon/graphene nanoribbons (GNRs), which includes, but is not limited to, electronic components for integrated circuits such as NOT gates, OR...
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US20090161711 |
Nitride semiconductor laser diode
A nitride semiconductor laser diode has a quantum well layer consisting of a mixed crystal of Al x1 In y1 Ga 1-x1-y1 N (x1≧0.5, y1≧0 and 1−x1−y1≦0.5) in a group III nitride semiconductor...
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US20090127541 |
REDUCING DEFECTS IN SEMICONDUCTOR QUANTUM WELL HETEROSTRUCTURES
Reducing defects in semiconductor quantum well structures is generally described. In one example, an apparatus includes a semiconductor substrate including silicon, a buffer film epitaxially grown...
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US20090127540 |
Systems and Methods for Nanowire Growth
The present invention is directed to systems and methods for nanowire growth. In an embodiment, methods for nanowire growth and doping are provided, including methods for epitaxial vertically...
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US20090122822 |
Semiconductor device having trench extending perpendicularly to cleaved plane and manufacturing method of the same
A method for manufacturing a semiconductor device includes setting cut lines in parallel to a normal direction of a (1-100) plane orthogonal to the principal plane and in parallel to a normal...
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US20090114901 |
Room Temperature Carbon Nanotubes Integrated on CMOS
Embodiments of the invention integrate carbon nanotubes on a CMOS substrate using localized heating. An embodiment can allow the CMOS substrate to be in a room-temperature environment during the...
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US20090108251 |
CONTROLLED GROWTH OF A NANOSTRUCTURE ON A SUBSTRATE
The present invention provides for nanostructures grown on a conducting substrate, and a method of making the same. The nanostructures grown according to the claimed method are suitable for...
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US20090108252 |
Lateral two-terminal nanotube devices and method for their formation
An apparatus, system, and method are provided for a lateral two-terminal nanotube device configured to capture and generate energy, to store electrical energy, and to integrate these functions with...
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US20090101887 |
SILICON GERMANIUM HETEROSTRUCTURE BARRIER VARACTOR
Methods and heterostructure barrier varactor (HBV) diodes optimized for application with frequency multipliers at providing outputs at submillimeter wave frequencies and above. The HBV diodes...
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US20090101888 |
METHOD OF MANUFACTURING IN (As) Sb SEMICONDUCTOR ON LATTICE-MISMATCHED SUBSTRATE AND SEMICONDUCTOR DEVICE USING THE SAME
Disclosed is a method of manufacturing a semiconductor device whereby InAs (1-x) Sb x semiconductor layer is formed on an easily available and economical semiconductor substrate such as a GaAs...
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US20090090902 |
OPTICAL DEVICES USING A PENTERNARY III-V MATERIAL SYSTEM
The invention relates to the design and processing of a semiconductor optical device. The device is formed of at least four layers of III-V compounds in which one consists of the penternary...
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US20090078929 |
NANOWIRE DEVICE AND METHOD OF MAKING A NANOWIRE DEVICE
A method of making nanowires includes providing a silicon substrate having a silicon dioxide insulation on the surface thereof. The silicon dioxide is etched to form one or more pillars, each...
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US20090073536 |
High performance chirped electrode design for large area optoelectronic devices
An electro-optic device with a doped semiconductor base and a plurality of pixels on the semiconductor base, each pixel including: a multiple quantum well formed on the semiconductor base, an...
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US20090057648 |
High Hole Mobility P-Channel Ge Transistor Structure on Si Substrate
The present disclosure provides an apparatus and method for implementing a high hole mobility p-channel Germanium (“Ge”) transistor structure on a Silicon (“Si”) substrate. One exemplary...
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US20090051384 |
COMPLEMENTARY LOGIC CIRCUIT
A quantum device comprises first conductive members and second conductive members confining carriers in the z direction and having two dimensional electron gas on the xy plane. Third conductive...
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US20090053536 |
Compositions and Methods for Forming a Semiconducting and/or Silicon-Containing Film, and Structures Formed Therefrom
Compositions, inks and methods for forming a patterned silicon-containing film and patterned structures including such a film. The composition generally includes (a) passivated semiconductor...
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US20090034049 |
Flip Chip Quantum Well Modulator
A quantum well modulator configured to absorb or transmit light depending on an applied voltage is provided according to various embodiments. The quantum well modulator may include a substrate, a...
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US20090032801 |
Approach to contacting nanowire arrays using nanoparticles
An in situ approach toward connecting and electrically contacting vertically aligned nanowire arrays using conductive nanoparticles is provided. The utility of the approach is demonstrated by...
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US20090009057 |
QUANTUM DOT OPTICAL DEVICE
Disclosed herein is a quantum dot optical device, including: a substrate; a hole injection electrode; a hole transport layer; a quantum dot luminescent layer; an electron transport layer; and an...
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US20090001350 |
High hole mobility semiconductor device
One embodiment of the invention includes a high hole mobility p-channel GaAs y Sb 1-y quantum well with a silicon substrate and an In x Al 1-x As barrier layer.
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US20090001351 |
Insb Thin Film Magnetic Sensor and Fabrication Method Thereof
The present invention relates to a thin film lamination to be used in a micro InSb thin film magnetic sensor which can directly detect a magnetic flux density with high sensitivity and has small...
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US20080315181 |
Nanotube schottky diodes for high-frequency applications
Described is a Schottky diode using semi-conducting single-walled nanotubes (s-SWNTs) with titanium Schottky and platinum Ohmic contacts for high-frequency applications. The diodes are fabricated...
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US20080315182 |
Optical semiconductor device and method for manufacturing the same
There is provided an optical semiconductor device having a first optical semiconductor element including an InP substrate, a lower cladding layer formed on the InP substrate, a lower optical guide...
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US20080296555 |
LAMP WITH CONTROLLABLE SPECTRUM
An area illumination inorganic electro-luminescent device including a substrate; and an array of one or more commonly addressed, light-emitting elements. Each commonly-addressed, light-emitting...
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US20080277645 |
Ferromagneic Influence on Quantum Dots
A semiconductor magnetic body comprises a layer ( 11 15 ) intended to trap electrons, wherein said layer ( 11 15 ) is surrounded on both sides by a magnetic layer ( 16, 17 ). This leads to the...
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US20080272363 |
Selectively Conducting Devices, Diode Constructions, Constructions, and Diode Forming Methods
Some embodiments include selectively conducting devices having a first electrode, a second electrode, and dielectric material between the first and second electrodes. The dielectric material may be...
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