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US20120193605 POWDERED QUANTUM DOTS  
Powdered quantum dots that can be dispersed into a silicone layer are provided. The powdered quantum dots are a plurality of quantum dot particles, preferably on the micron or nanometer scale. The...
US20100314608 PHOTODETECTORS  
Implementations of quantum well photodetectors are provided.
US20140008612 Coupled Asymmetric Quantum Confinement Structures  
Implementations and techniques for coupled asymmetric quantum confinement structures are generally disclosed.
US20110121263 Coupled Asymmetric Quantum Confinement Structures  
Implementations and techniques for coupled asymmetric quantum confinement structures are generally disclosed.
US20130026445 QUANTUM DOT OPTOELECTRONIC DEVICE AND METHODS THEREFOR  
An optoelectronic device and method for fabricating optoelectronic device, comprising: forming a quantum dot layer on a substrate including at least one electronically conductive layer, including...
US20140353583 POLARIZATION INDEPENDENT PHOTODETECTOR WITH HIGH CONTRAST GRATING AND TWO DIMENSIONAL PERIOD STRUCTURE  
A photodetector is provided with a high contrast grating (HCG) reflector first reflector that has a two dimensional periodic structure. The two dimensional structure is a periodic structure that...
US20120187373 Stepwise Surface Assembly of Quantum Dot-Fullerene Heterodimers  
The present invention relates to high-purity quantum dot-fullerene dimers with controllable linker length and the process of fabricating the same. More particularly, this invention relates to the...
US20130069039 Ge QUANTUM DOTS FOR DISLOCATION ENGINEERING OF III-N ON SILICON  
A virtual substrate structure includes a crystalline silicon substrate with a first layer of III-N grown on the silicon substrate. Ge clusters or quantum dots are grown on the first layer of III-N...
US20100264402 USE OF SACK GEOMETRY TO IMPLEMENT A SINGLE QUBIT PHASE GATE  
An implementation of a single qubit phase gate for use in a quantum information processing scheme based on the υ=5/2 fractional quantum Hall (FQH) state is disclosed. Using sack geometry, a qubit...
US20110168975 CAGED QUANTUM DOTS  
Semiconductor nanocrystals known as quantum dots (QD) are caged by being associated with a molecule such as an orth-Nitrobenzyl (ONB) group. The luminescence of the QD is suppressed until...
US20120056159 CONTROLLED QUANTUM DOT GROWTH  
The present disclosure generally relates to techniques for controlled quantum dot growth as well as a quantum dot structures. In some examples, a method is described that includes one or more of...
US20150160531 Nanostructured Functional Coatings and Devices  
In one aspect of the present invention, an article including a nanostructured functional coating disposed on a substrate is described. The functional coating is characterized by both...
US20110062415 ANISOTROPIC STRAIN CONTROL IN SEMIPOLAR NITRIDE QUANTUM WELLS BY PARTIALLY OR FULLY RELAXED ALUMINUM INDIUM GALLIUM NITRIDE LAYERS WITH MISFIT DISLOCATIONS  
An epitaxial structure for a III-Nitride based optical device, comprising an active layer with anisotropic strain on an underlying layer, where a lattice constant and strain in the underlying...
US20140312302 COLLODIAL SEMICONDUCTING STRUCTURE  
The present invention is based on a unique design of a novel structure, which incorporates two quantum dots of a different bandgap separated by a tunneling barrier. Upconversion is expected to...
US20090174435 Monolithically-Integrated Graphene-Nano-Ribbon (GNR) Devices, Interconnects and Circuits  
The invention discloses new and advantageous uses for carbon/graphene nanoribbons (GNRs), which includes, but is not limited to, electronic components for integrated circuits such as NOT gates, OR...
US20060151775 Solid state charge qubit device  
Ionisation of one of a pair of dopant atoms (11, 12) in a substrate (13) creates a double well potential, and a charge qubit is realised by the location of one or more electrons or holes (14)...
US20090250686 METHOD FOR FABRICATION OF SEMIPOLAR (Al, In, Ga, B)N BASED LIGHT EMITTING DIODES  
A yellow Light Emitting Diode (LED) with a peak emission wavelength in the range 560-580 nm is disclosed. The LED is grown on one or more III-nitride-based semipolar planes and an active layer of...
US20130146843 Segmented Nanowires Displaying Locally Controllable Properties  
Vapor-liquid-solid growth of nanowires is tailored to achieve complex one-dimensional material geometries using phase diagrams determined for nanoscale materials. Segmented one-dimensional...
US20100301308 PHOTODETECTORS  
Implementations of quantum well photodetectors are provided. In one embodiment, a quantum structure includes a first barrier layer, a well layer located on the first barrier layer, and a second...
US20120006390 Nano-wire solar cell or detector  
Solar cells or photodetectors having one or more single-crystal shell layers conformally deposited on Ge nano-wires are provided. This approach can provide higher efficiency and/or reduced...
US20140291613 MULTIPLE QUANTUM WELL STRUCTURE  
A multiple quantum well structure including a plurality of well-barrier pairs arranged along a direction is provided. Each of the well-barrier pairs includes a barrier layer and a well layer...
US20150236179 FILTERING DEFECTS WITH STRAIN-COMPENSATED MULTI-LAYER QUANTUM DOTS  
The invention disclosed an approach of fabricating high quality semiconductor layers during the epitaxial growth by utilizing strain-compensated multiple layers of quantum dots to block the...
US20060163556 Refractive index variable device  
A refractive index variable device has a structure including quantum dots dispersed in a solid matrix, each of the quantum dots comprising a combination of a negatively charged accepter and a...
US20120193608 FRONTSIDE-ILLUMINATED INVERTED QUANTUM WELL INFRARED PHOTODETECTOR DEVICES AND METHODS OF FABRICATING THE SAME  
A method of fabricating a frontside-illuminated inverted quantum well infrared photodetector may include providing a quantum well wafer having a bulk substrate layer and a quantum material layer,...
US20130153860 METHOD OF FORMING HYBRID NANOSTRUCTURE ON GRAPHENE, HYBRID NANOSTRUCTURE, AND DEVICE INCLUDING THE HYBRID NANOSTRUCTURE  
A method of forming a hybrid nanostructure on graphene, the method including providing a graphene layer on a substrate; forming a metal layer on the graphene layer; and chemically depositing a...
US20120007046 CARBON NANOTUBE HYBRID PHOTOVOLTAICS  
Systems, methods and devices for the efficient photocurrent generation in single- or multi-walled carbon nanotubes, which includes (SWNTs)/poly [3-hexylthiophene-2,5-diyl] (P3HT) hybrid...
US20110121264 COMPOSITE STRUCTURE OF GRAPHENE AND NANOSTRUCTURE AND METHOD OF MANUFACTURING THE SAME  
A composite structure includes; graphene and at least one substantially one-dimensional nanostructure disposed on the graphene.
US20140252312 Tunnel Diodes Incorporating Strain-Balanced, Quantum-Confined Heterostructures  
A strain-balanced quantum well tunnel junction (SB-QWTJ) device. QW structures are formed from alternating quantum well and barrier layers situated between n++ and p++ layers in a tunnel junction...
US20090230382 III-V semiconductor core-heteroshell nanocrystals  
The present invention provides a core/multishell semiconductor nanocrystal comprising a core and multiple shells, which exhibits a type-I band offset and high photoluminescence quantum yield...
US20060284163 Single ELOG growth transverse p-n junction nitride semiconductor laser  
A vertical quantum well nitride laser-can be fabricated by ELOG (epitaxial lateral overgrowth), with the vertical quantum wells created by deposition over the vertical a-face of the laterally...
US20110204329 NON-POLAR (Al,B,In,Ga)N QUANTUM WELL AND HETEROSTRUCTURE MATERIALS AND DEVICES  
A method for forming non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices. Non-polar (11 20) a-plane GaN layers are grown on an r-plane (1 102) sapphire substrate using...
US20100051905 MOISTURE DETECTOR, BIOLOGICAL BODY MOISTURE DETECTOR, NATURAL PRODUCT MOISTURE DETECTOR, AND PRODUCT/MATERIAL MOISTURE DETECTOR  
A moisture detector includes a light-receiving element including an absorption layer having a pn-junction, or an array of the light-receiving elements, wherein the absorption layer has a...
US20100224858 LATERAL THERMAL DISSIPATION LED AND FABRICATION METHOD THEREOF  
A lateral thermal dissipation LED and a fabrication method thereof are provided. The lateral thermal dissipation LED utilizes a patterned metal layer and a lateral heat spreading layer to transfer...
US20140042390 INTERPENETRATING NETWORKS OF CARBON NANOSTRUCTURES AND NANO-SCALE ELECTROACTIVE MATERIALS  
An interpenetrating network assembly with a network of connected flakes of nano-scale crystalline carbon and nano-scale particles of an electroactive material interconnected with the carbon flakes...
US20100108986 METHOD FOR THE PRODUCTION OF QUANTUM DOTS EMBEDDED IN A MATRIX, AND QUANTUM DOTS EMBEDDED IN A MATRIX PRODUCED USING THE METHOD  
A method for producing quantum dots embedded in a matrix on a substrate includes the steps of: depositing a precursor on the substrate, the precursor including at least one first metal or a metal...
US20100295017 LIGHT EMITTING DIODE ELEMENT AND METHOD FOR FABRICATING THE SAME  
The present invention discloses a light emitting diode (LED) element and a method for fabricating the same, which can promote light extraction efficiency of LED, wherein a substrate is etched to...
US20110147712 QUANTUM WELL TRANSISTORS WITH REMOTE COUNTER DOPING  
A quantum well device and a method for manufacturing the same are disclosed. In an embodiment, a quantum well structure comprises a quantum well region overlying a substrate and a remote counter...
US20080035911 Efficient construction of quantum computatitonal clusters  
A method of creating two-dimensional quantum computational cluster states is demonstrated that is considerably more efficient than previously proposed approaches. The method uses local unitaries...
US20110315958 HIGH OPERATING TEMPERATURE SPLIT-OFF BAND INFRARED DETECTOR WITH DOUBLE AND/OR GRADED BARRIER  
A high operating temperature split-off band infrared (SPIP) detector having a double and/or graded barrier on either side of the emitter is provided. The photodetector may include a first and...
US20100009338 Novel gold nanostructures and methods of use  
The invention is drawn to novel nanostructures comprising hollow nanospheres and nanotubes for use as chemical sensors, conduits for fluids, and electronic conductors. The nanostructures can be...
US20130248820 GALLIUM NITRIDE SUBSTRATE AND EPITAXIAL WAFER  
A gallium nitride substrate includes a plurality of physical level differences in a surface thereof. All the physical level differences existing in the surface have a dimension of not more than 4...
US20110001125 PHOTODETECTOR CAPABLE OF DETECTING LONG WAVELENGTH RADIATION  
Apparatuses capable of and techniques for detecting long wavelength radiation are provided.
US20090090902 OPTICAL DEVICES USING A PENTERNARY III-V MATERIAL SYSTEM  
The invention relates to the design and processing of a semiconductor optical device. The device is formed of at least four layers of III-V compounds in which one consists of the penternary...
US20070034858 Light-emitting diodes with quantum dots  
An apparatus includes a light-emitting diode. The light-emitting diode has a semiconductor matrix of one or more group III-nitride alloys and quantum dots dispersed inside the matrix. The quantum...
US20140252316 QUANTUM DOTS, RODS, WIRES, SHEETS, AND RIBBONS, AND USES THEREOF  
Described are ZnxCd1-xSySe1-y/ZnSzSe1-z core/shell nanocrystals, CdTe/CdS/ZnS core/shell/shell nanocrystals, optionally ally doped Zn(S,Se,Te) nano- and quantum wires, and SnS quantum sheets or...
US20110001124 PHOTODETECTOR CAPABLE OF DETECTING THE VISIBLE LIGHT SPECTRUM  
Apparatuses capable of and techniques for detecting the visible light spectrum are provided.
US20140091278 Surface Treatment of Nanocrystal Quantum Dots After Film Deposition  
Provided are methods of surface treatment of nanocrystal quantum dots after film deposition so as to exchange the native ligands of the quantum dots for exchange ligands that result in improvement...
US20050211970 Metal nano-objects, formed on semiconductor surfaces, and method for making said nano-objects  
Metallic nano-objects, formed on surfaces of semiconductors, and a process for manufacturing these nano-objects. The invention is applicable in nano-electronics and for example provides a means of...
US20060124918 Polychromatic LED's and related semiconductor devices  
A semiconductor device is provided comprising a first potential well located within a pn junction and a second potential well not located within a pn junction. The potential wells may be quantum...
US20080157057 Nanostructure Having a Nitride-Based Quantum Well and Light Emitting Diode Employing the Same  
Disclosed are a nanostructure with an indium gallium nitride quantum well and a light emitting diode employing the same. The light emitting diode comprises a substrate, a transparent electrode and...

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