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US20100314608 |
PHOTODETECTORS
Implementations of quantum well photodetectors are provided.
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US20110121263 |
Coupled Asymmetric Quantum Confinement Structures
Implementations and techniques for coupled asymmetric quantum confinement structures are generally disclosed.
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US20100264402 |
USE OF SACK GEOMETRY TO IMPLEMENT A SINGLE QUBIT PHASE GATE
An implementation of a single qubit phase gate for use in a quantum information processing scheme based on the υ=5/2 fractional quantum Hall (FQH) state is disclosed. Using sack geometry, a qubit ...
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US20110168975 |
CAGED QUANTUM DOTS
Semiconductor nanocrystals known as quantum dots (QD) are caged by being associated with a molecule such as an orth-Nitrobenzyl (ONB) group. The luminescence of the QD is suppressed until activated...
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US20120056159 |
CONTROLLED QUANTUM DOT GROWTH
The present disclosure generally relates to techniques for controlled quantum dot growth as well as a quantum dot structures. In some examples, a method is described that includes one or more of...
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US20110062415 |
ANISOTROPIC STRAIN CONTROL IN SEMIPOLAR NITRIDE QUANTUM WELLS BY PARTIALLY OR FULLY RELAXED ALUMINUM INDIUM GALLIUM NITRIDE LAYERS WITH MISFIT DISLOCATIONS
An epitaxial structure for a III-Nitride based optical device, comprising an active layer with anisotropic strain on an underlying layer, where a lattice constant and strain in the underlying layer...
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US20090174435 |
Monolithically-Integrated Graphene-Nano-Ribbon (GNR) Devices, Interconnects and Circuits
The invention discloses new and advantageous uses for carbon/graphene nanoribbons (GNRs), which includes, but is not limited to, electronic components for integrated circuits such as NOT gates, OR...
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US20060151775 |
Solid state charge qubit device
Ionisation of one of a pair of dopant atoms (11, 12) in a substrate (13) creates a double well potential, and a charge qubit is realised by the location of one or more electrons or holes (14)...
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US20090250686 |
METHOD FOR FABRICATION OF SEMIPOLAR (Al, In, Ga, B)N BASED LIGHT EMITTING DIODES
A yellow Light Emitting Diode (LED) with a peak emission wavelength in the range 560-580 nm is disclosed. The LED is grown on one or more III-nitride-based semipolar planes and an active layer of...
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US20100301308 |
PHOTODETECTORS
Implementations of quantum well photodetectors are provided. In one embodiment, a quantum structure includes a first barrier layer, a well layer located on the first barrier layer, and a second...
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US20120006390 |
Nano-wire solar cell or detector
Solar cells or photodetectors having one or more single-crystal shell layers conformally deposited on Ge nano-wires are provided. This approach can provide higher efficiency and/or reduced material...
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US20060163556 |
Refractive index variable device
A refractive index variable device has a structure including quantum dots dispersed in a solid matrix, each of the quantum dots comprising a combination of a negatively charged accepter and a...
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US20120007046 |
CARBON NANOTUBE HYBRID PHOTOVOLTAICS
Systems, methods and devices for the efficient photocurrent generation in single- or multi-walled carbon nanotubes, which includes (SWNTs)/poly [3-hexylthiophene-2,5-diyl] (P3HT) hybrid...
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US20110121264 |
COMPOSITE STRUCTURE OF GRAPHENE AND NANOSTRUCTURE AND METHOD OF MANUFACTURING THE SAME
A composite structure includes; graphene and at least one substantially one-dimensional nanostructure disposed on the graphene.
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US20090230382 |
III-V semiconductor core-heteroshell nanocrystals
The present invention provides a core/multishell semiconductor nanocrystal comprising a core and multiple shells, which exhibits a type-I band offset and high photoluminescence quantum yield...
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US20060284163 |
Single ELOG growth transverse p-n junction nitride semiconductor laser
A vertical quantum well nitride laser-can be fabricated by ELOG (epitaxial lateral overgrowth), with the vertical quantum wells created by deposition over the vertical a-face of the laterally...
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US20110204329 |
NON-POLAR (Al,B,In,Ga)N QUANTUM WELL AND HETEROSTRUCTURE MATERIALS AND DEVICES
A method for forming non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices. Non-polar (11 20) a-plane GaN layers are grown on an r-plane (1 102) sapphire substrate using...
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US20100051905 |
MOISTURE DETECTOR, BIOLOGICAL BODY MOISTURE DETECTOR, NATURAL PRODUCT MOISTURE DETECTOR, AND PRODUCT/MATERIAL MOISTURE DETECTOR
A moisture detector includes a light-receiving element including an absorption layer having a pn-junction, or an array of the light-receiving elements, wherein the absorption layer has a...
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US20100224858 |
LATERAL THERMAL DISSIPATION LED AND FABRICATION METHOD THEREOF
A lateral thermal dissipation LED and a fabrication method thereof are provided. The lateral thermal dissipation LED utilizes a patterned metal layer and a lateral heat spreading layer to transfer...
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US20100108986 |
METHOD FOR THE PRODUCTION OF QUANTUM DOTS EMBEDDED IN A MATRIX, AND QUANTUM DOTS EMBEDDED IN A MATRIX PRODUCED USING THE METHOD
A method for producing quantum dots embedded in a matrix on a substrate includes the steps of: depositing a precursor on the substrate, the precursor including at least one first metal or a metal...
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US20100295017 |
LIGHT EMITTING DIODE ELEMENT AND METHOD FOR FABRICATING THE SAME
The present invention discloses a light emitting diode (LED) element and a method for fabricating the same, which can promote light extraction efficiency of LED, wherein a substrate is etched to...
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US20110147712 |
QUANTUM WELL TRANSISTORS WITH REMOTE COUNTER DOPING
A quantum well device and a method for manufacturing the same are disclosed. In an embodiment, a quantum well structure comprises a quantum well region overlying a substrate and a remote counter...
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US20080035911 |
Efficient construction of quantum computatitonal clusters
A method of creating two-dimensional quantum computational cluster states is demonstrated that is considerably more efficient than previously proposed approaches. The method uses local unitaries...
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US20110315958 |
HIGH OPERATING TEMPERATURE SPLIT-OFF BAND INFRARED DETECTOR WITH DOUBLE AND/OR GRADED BARRIER
A high operating temperature split-off band infrared (SPIP) detector having a double and/or graded barrier on either side of the emitter is provided. The photodetector may include a first and...
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US20100009338 |
Novel gold nanostructures and methods of use
The invention is drawn to novel nanostructures comprising hollow nanospheres and nanotubes for use as chemical sensors, conduits for fluids, and electronic conductors. The nanostructures can be...
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US20110001125 |
PHOTODETECTOR CAPABLE OF DETECTING LONG WAVELENGTH RADIATION
Apparatuses capable of and techniques for detecting long wavelength radiation are provided.
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US20090090902 |
OPTICAL DEVICES USING A PENTERNARY III-V MATERIAL SYSTEM
The invention relates to the design and processing of a semiconductor optical device. The device is formed of at least four layers of III-V compounds in which one consists of the penternary...
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US20070034858 |
Light-emitting diodes with quantum dots
An apparatus includes a light-emitting diode. The light-emitting diode has a semiconductor matrix of one or more group III-nitride alloys and quantum dots dispersed inside the matrix. The quantum...
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US20110001124 |
PHOTODETECTOR CAPABLE OF DETECTING THE VISIBLE LIGHT SPECTRUM
Apparatuses capable of and techniques for detecting the visible light spectrum are provided.
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US20050211970 |
Metal nano-objects, formed on semiconductor surfaces, and method for making said nano-objects
Metallic nano-objects, formed on surfaces of semiconductors, and a process for manufacturing these nano-objects. The invention is applicable in nano-electronics and for example provides a means of...
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US20060124918 |
Polychromatic LED's and related semiconductor devices
A semiconductor device is provided comprising a first potential well located within a pn junction and a second potential well not located within a pn junction. The potential wells may be quantum...
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US20080157057 |
Nanostructure Having a Nitride-Based Quantum Well and Light Emitting Diode Employing the Same
Disclosed are a nanostructure with an indium gallium nitride quantum well and a light emitting diode employing the same. The light emitting diode comprises a substrate, a transparent electrode and...
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US20080116368 |
Luminous Body, Electron Beam Detector Using the Same, Scanning Electron Microscope, and Mass Analysis Device
A light-emitting body of rapid speed of response and high light emission intensity, and an electron beam detector, scanning electron microscope and mass spectroscope using this are provided. In the...
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US20100320443 |
ER Doped III-Nitride Materials And Devices Synthesized by MOCVD
This disclosure relates to the synthesis of Er doped GaN epilayers by in-situ doping by metal-organic chemical vapor deposition (MOCVD). In an embodiment, both above and below bandgap excitation...
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US20090267051 |
Method of preparing quantum dot-inorganic matrix composites
A method for preparing a quantum dot-inorganic matrix composite includes preparing an inorganic matrix precursor solution containing one or more quantum dot precursors, spin-coating the precursor...
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US20110204328 |
NITRIDE BASED DEVICES INCLUDING A SYMMETRICAL QUANTUM WELL ACTIVE LAYER HAVING A CENTRAL LOW BANDGAP DELTA-LAYER
A symmetrical quantum well active layer provides enhanced internal quantum efficiency. The quantum well active layer includes an inner (central) layer and a pair of outer layers sandwiching the...
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US20050077509 |
Size regulating systems
A system for regulating the particles distribution energy dependent parameter. The particles may have a cell containing the particles, a sensor to detect the particles distribution, a source to...
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US20060157686 |
Quantum dot phosphor for light emitting diode and method of preparing the same
Disclosed herein is a quantum dot phosphor for light emitting diodes, which includes quantum dots and a solid substrate on which the quantum dots are supported. Also, a method of preparing the...
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US20100015526 |
Molecular Heterostructures for Energy Conversion and Storage
The present invention provides for a metal-molecule heterostructure comprising (a) a plurality of metal, semimetallic or semiconducting nanoparticles, and (b) a plurality of electrically conductive...
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US20090302307 |
LED Semiconductor Body
An LED semiconductor body includes a semiconductor layer sequence which comprises a quantum structure which is intended to produce radiation and comprises at least one quantum layer and at least...
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US20100219396 |
Mechanism for Forming a Remote Delta Doping Layer of a Quantum Well Structure
A method of fabricating a quantum well device includes forming a diffusion barrier on sides of a delta layer of a quantum well to confine dopants to the quantum well.
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US20060274803 |
Quantum well structure
A quantum well structure according to the invention includes a quantum well layer (107) arranged between two barrier layers (109, 112). It is distinguished in that at least one of the barrier...
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US20080237573 |
Mechanism for forming a remote delta doping layer of a quantum well structure
A method of fabricating a quantum well device includes forming a diffusion barrier on sides of a delta layer of a quantum well to confine dopants to the quantum well.
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US20090283749 |
QUANTUM-WELL PHOTOELECTRIC DEVICE ASSEMBLED FROM NANOMEMBRANES
A quantum-well photoelectric device, such as a quantum cascade laser, is constructed of monocrystalline nanoscale membranes physically removed from a substrate and mechanically assembled into a stack.
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US20100283037 |
CORE-SHELL QUANTUM DOT FLUORESCENT FINE PARTICLES
Disclosed is an ultraviolet fluorescent material having high light emission efficiency, wherein the peak wavelength of ultraviolet light to be emitted can be controlled by having a quantum dot...
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US20120061647 |
INFRARED LIGHT DETECTOR
Provided is an infrared light detector 100 wherein a light coupling mechanism 110 is configured by a metal thin film or metal thin plate in which a plurality of windows apart from each other are...
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US20100006820 |
SILICA NANOWIRE COMPRISING SILICON NANODOTS AND METHOD OF PREPARING THE SAME
Provided are a silica nanowire that includes silicon nanodots and a method of preparing the same. The silica nanowire has excellent capacitance characteristics and improved light absorption...
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US20110133160 |
NANOWIRE STRUCTURED PHOTODIODE WITH A SURROUNDING EPITAXIALLY GROWN P OR N LAYER
An embodiment relates to a device comprising a substrate, a nanowire and a doped epitaxial layer surrounding the nanowire, wherein the nanowire is configured to be both a channel to transmit...
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US20120018699 |
METHOD OF ZINC OXIDE FILM GROWN ON THE EPITAXIAL LATERAL OVERGROWTH GALLIUM NITRIDE TEMPLATE
A growth method is proposed for high quality zinc oxide comprising the following steps: (1) growing a gallium nitride layer on a sapphire substrate around a temperature of 1000° C.; (2) patterning ...
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US20090161711 |
Nitride semiconductor laser diode
A nitride semiconductor laser diode has a quantum well layer consisting of a mixed crystal of Alx1Iny1Ga1-x1-y1N (x1≧0.5, y1≧0 and 1−x1−y1≦0.5) in a group III nitride semiconductor multilaye...
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