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US20100129925 |
SEMICONDUCTOR NANOWIRES CHARGE SENSOR
A semiconductor nanowire is coated with a chemical coating layer that comprises a functional material which modulates the quantity of free charge carriers within the semiconductor nanowire. The...
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US20100127239 |
III-Nitride Semiconductor Light Emitting Device
The present disclosure relates to a III-nitride semiconductor light-emitting device including an n-type nitride semiconductor layer, a p-type nitride semiconductor layer doped with a p-type dopant,...
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US20100123119 |
LIGHT EMITTING DIODE HAVING INDIUM NITRIDE
The present invention relates to a light emitting diode (LED) including an n-type nitride semiconductor layer, a p-type nitride semiconductor layer, and an active region interposed between the...
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US20100117058 |
MULTI-STRUCTURE NANOWIRE AND METHOD OF MANUFACTURING THE SAME
Provided is a multi-structure nanowire in which silicon nanowires are formed at both ends of a compound semi-conductor nanorod, and a method of manufacturing the multi-structure nanowire. The...
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US20100051904 |
Dual-Level Self-Assembled Patterning Method and Apparatus Fabricated Using the Method
A method of fabricating a device includes: providing a substrate having a patterned surface, depositing a first-level self-assembled material on at least a portion of the patterned surface, wherein...
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US20100045169 |
NANO ELECTRONIC DEVICES
Nano material devices are provided. In one embodiment, a nano material device comprises a substrate, a first layer disposed on the substrate, a second layer and a third layer The first layer is...
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US20080315182 |
Optical semiconductor device and method for manufacturing the same
There is provided an optical semiconductor device having a first optical semiconductor element including an InP substrate, a lower cladding layer formed on the InP substrate, a lower optical guide...
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US20120032145 |
DETECTION DEVICE, LIGHT-RECEIVING ELEMENT ARRAY, SEMICONDUCTOR CHIP, METHOD FOR MANUFACTURING THE SAME, AND OPTICAL SENSOR APPARATUS
A detection device includes a light-receiving element array and a read-out integrated circuit (CMOS), bumps of the light-receiving element array being bonded to bumps of the read-out integrated...
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US20120025167 |
Vertical Light Emitting Diode (VLED) Die Having Electrode Frame And Method Of Fabrication
A vertical light emitting diode (VLED) die includes a metal base; a mirror on the metal base; a p-type semiconductor layer on the reflector layer; a multiple quantum well (MQW) layer on the p-type...
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US20120018703 |
OPTOELECTRONIC SEMICONDUCTOR COMPONENT AND METHOD FOR THE MANUFACTURE THEREOF
Manufacturing semiconductor heterostructures by way of molecular beam epitaxy, including placing a substrate into a first vacuum chamber, heating the substrate to a first temperature, depositing...
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US20120018702 |
SURFACE AND GAS PHASE DOPING OF III-V SEMICONDUCTORS
Compound semiconductor devices and methods of doping compound semiconductors are provided. Embodiments of the invention provide post-deposition (or post-growth) doping of compound semiconductors,...
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US20120007047 |
SEMICONDUCTOR LIGHT-EMITTING DEVICE
A semiconductor light-emitting device including a substrate, an n-type semiconductor layer formed on the substrate, an active layer laminated on the n-type semiconductor layer and capable of...
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US20120007045 |
P-TYPE SEMICONDUCTOR DEVICE COMPRISING TYPE-2 QUANTUM WELL AND FABRICATION METHOD THEREOF
Disclosed herein are a method of generating a two-dimensional hole gas (2DHG) using a type-2 quantum well formed using semiconductors with different electron affinities or band gap, and a...
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US20110315953 |
METHOD OF FORMING COMPOUND SEMICONDUCTOR
A method of forming a semiconductor is provided and includes patterning a pad and a nanowire onto a wafer, the nanowire being substantially perpendicular with a pad sidewall and substantially...
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US20110278539 |
GENERATION OF MULTIPLE DIAMETER NANOWIRE FIELD EFFECT TRANSISTORS
A method of modifying a wafer having a semiconductor disposed on an insulator is provided and includes forming first and second nanowire channels connected at each end to semiconductor pads at...
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US20110278537 |
SEMICONDUCTOR EPITAXIAL STRUCTURES AND SEMICONDUCTOR OPTOELECTRONIC DEVICES COMPRISING THE SAME
A semiconductor epitaxial structure includes a substrate; a semiconductor epitaxial stack layers formed on the substrate; and a plurality of semiconductor buffer layers deposited between the...
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US20110272671 |
SEMICONDUCTOR DEVICE AND A METHOD OF FABRICATING A SEMICONDUCTOR DEVICE
A semiconductor device comprising a quantum dot and a plurality of layers, wherein said plurality of layers comprises: a first layer; a stressor layer; and a patterned layer wherein said stressor...
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US20110249322 |
Nanowire-based opto-electronic device
Nanowire-based opto-electronic devices including nanowire lasers, photodetectors and semiconductor optical amplifiers are disclosed. The devices include nanowires grown from single crystal and/or...
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US20110175059 |
II-VI CORE-SHELL SEMICONDUCTOR NANOWIRES
A plurality of core-shell semiconductor nanowires each being fixed to a support includes II-VI materials for both the cores and the shells. Each nanowire terminates in a free end and a metal alloy...
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US20110140082 |
LIGHT-RECEIVING ELEMENT AND LIGHT-RECEIVING ELEMENT ARRAY
Provided are a light-receiving element which has sensitivity in the near-infrared region and in which a good crystal quality is easily obtained, a one-dimensional or two-dimensional array of the...
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US20110121265 |
GROUP III NITRIDE SEMICONDUCTOR OPTICAL DEVICE
A group III nitride semiconductor optical device 11a has a group III nitride semiconductor substrate 13 having a main surface 13a forming a finite angle with a reference plane Sc orthogonal to a...
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US20110073839 |
II-VI SEMICONDUCTOR NANOWIRES
A high quality II-VI semiconductor nanowire is disclosed. A plurality of II-VI semiconductor nanowires is provided, with each being fixed to a support. Each nanowire terminates in a free end and a...
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US20110062416 |
NANOWIRE-BASED PHOTODIODE
A nanowire-based photodiode and an interdigital p-i-n photodiode use an i-type semiconductor nanowire in an i-region of the photodiode. The nanowire-based photodiode includes a first sidewall of a...
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US20110042646 |
Nitride semiconductor wafer, nitride semiconductor chip, method of manufacture thereof, and semiconductor device
A nitride semiconductor chip allows enhancement of luminous efficacy. The nitride semiconductor laser chip (nitride semiconductor chip) has a GaN substrate, which has a principal growth plane, and...
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US20110042644 |
NITRIDE BASED SEMICONDUCTOR OPTICAL DEVICE, EPITAXIAL WAFER FOR NITRIDE BASED SEMICONDUCTOR OPTICAL DEVICE, AND METHOD OF FABRICATING SEMICONDUCTOR LIGHT-EMITTING DEVICE
In the nitride based semiconductor optical device LE1, the strained well layers 21 extend along a reference plane SR1 tilting at a tilt angle α from the plane that is orthogonal to a reference ...
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US20110024721 |
SEMICONDUCTOR LIGHT EMITTING DEVICE
A semiconductor light emitting device including a semiconductor substrate and an active layer which is formed on the substrate and has a cascade structure formed by multistage-laminating unit...
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US20110012177 |
Nanostructure For Changing Electric Mobility
A structure and a method for a semiconductor including a nanostructure semiconductor channel. The semiconductor may include a dielectric and an electrode, the electrode attached to the dielectric,...
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US20110006284 |
PHOTONIC STRUCTURE
A photonic structure includes a plurality of annealed, substantially smooth-surfaced ellipsoids arranged in a matrix. Additionally, a method of producing a photonic structure is provided. The...
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US20110001126 |
Nitride semiconductor chip, method of fabrication thereof, and semiconductor device
A nitride semiconductor chip is provided that offers enhanced luminous efficacy and an increased yield as a result of an improved EL emission pattern and improved surface morphology (flatness)....
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US20100320440 |
DEEP ULTRAVIOLET LIGHT EMITTING DEVICE AND METHOD FOR FABRICATING SAME
An ultra-violet emitting light-emitting device and method for fabricating an ultraviolet light emitting device (LED) with an AlInGaN multiple-quantum-well active region exhibiting stable cw-powers....
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US20100308301 |
Semiconductor light-emitting device
A light-emitting diode has: a substrate; a light-emitting layer having a first conductivity type cladding layer, an active layer, and a second conductivity type cladding layer stacked sequentially...
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US20100301307 |
PLASMON ENHANCED LIGHT-EMITTING DIODES
Embodiments of the present invention are directed to light-emitting diodes. In one embodiment of the present invention, a light-emitting diode comprises at least one quantum well sandwiched between...
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