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US20120104457 POWER SWITCHING ASSEMBLY HAVING A ROBUST GATE CONNECTION  
A structurally robust power switching assembly, that has a power transistor, comprising a thin and delicate layer of metal oxide, and a major surface of the layer of metal oxide being...
US20110012667 Zero Power Drain Pushbutton On Switch  
A normally-open pushbutton switch is coupled to and cooperates with a pair of MOSFETs to provide a power on switch function for a personal audio device that does not require power to be drawn from...
US20110156093 HIGH-VOLTAGE POWER TRANSISTOR USING SOI TECHNOLOGY  
The power transistor configured to be integrated into a trench-isolated thick layer SOI-technology with an active silicon layer with a thickness of about 50 μm. The power transistor may have a...
US20130320396 MUTUAL BALLASTING MULTI-FINGER BIDIRECTIONAL ESD DEVICE  
An integrated circuit includes a bidirectional ESD device which has a plurality of parallel switch legs. Each switch leg includes a first current switch and a second current switch in a...
US20130032854 Rectirier  
The rectifier in this invention is connected in series with two field effect transistor, comprises: the source S1 of first N-channel FET F1 and the source S2 of second N-channel FET F2 are...
US20130234199 ESD Protection Circuit  
One embodiment of the disclosure provides an electrostatic discharge protection circuit. The electrostatic discharge protection circuit includes a p-type field effect transistor, a capacitance...
US20080246055 SEMICONDUCTOR COMPONENT INCLUDING A MONOCRYSTALLINE SEMICONDUCTOR BODY AND METHOD  
A semiconductor component comprising a monocrystalline semiconductor body, and to a method for producing the same is disclosed. In one embodiment, the semiconductor body has a semiconductor...
US20110180842 HIGH VOLTAGE SCRMOS IN BiCMOS PROCESS TECHNOLOGIES  
An integrated circuit containing an SCRMOS transistor. The SCRMOS transistor has one drain structure with a centralized drain diffused region and distributed SCR terminals, and a second drain...
US20140197450 ESD PROTECTION CIRCUIT  
An electrostatic discharge (ESD) protection circuit is coupled between first and second pads to protect an internal circuit therebetween. Under a normal operating condition, a voltage on the first...
US20130140601 Recessed Channel Negative Differential Resistance-Based Memory Cell  
The disclosed recessed thyristor-based memory cell comprises in one embodiment a conductive plug recessed into the bulk of the substrate, which is coupled to or comprises the enable gate of the...
US20080290366 Soi Vertical Bipolar Power Component  
An SOI device comprises an isolation trench defining a vertical drift zone, a buried insulating layer to which the isolation trench extends, and an electrode region for emitting charge carriers...
US20130341641 RECTIFIER CIRCUIT  
A rectifier circuit has a rectifier element and a unipolar field-effect transistor connected in series between a first terminal and a second terminal. The rectifier element comprises a first...
US20100295092 INTEGRATED PMOS TRANSISTOR AND SCHOTTKY DIODE  
The present invention discloses an integrated PMOS transistor and Schottky diode, comprising a PMOS transistor which includes a gate, a source, a drain and a channel region between the source and...
US20080191238 Bipolar Mosfet Devices and Methods For Their Use  
According to the invention there is provided a semiconductor device including: at least one cell including a base region of a first conductivity type having disposed therein at least one emitter...
US20110127574 DEVICE FOR PREVENTING CURRENT-LEAKAGE  
A device for preventing current-leakage is located between a transistor and a capacitor of a memory cell. The two terminals of the device for preventing current-leakage are respectively connected...
US20130168728 LATERAL INSULATED-GATE BIPOLAR TRANSISTOR AND MANUFACTURING METHOD THEREOF  
A lateral insulated-gate bipolar transistor includes a buried insulation layer which opens only part of the collector ion implantation region and isolates the other regions, thereby reducing the...
US20090032838 SYMMETRIC BIDIRECTIONAL SILICON-CONTROLLED RECTIFIER  
The present invention discloses a symmetric bidirectional silicon-controlled rectifier, which comprises: a substrate; a buried layer formed on the substrate; a first well, a middle region and a...
US20150014740 Monolithic Composite III-Nitride Transistor with High Voltage Group IV Enable Switch  
There are disclosed herein various implementations of a monolithically integrated component. In one exemplary implementation, such a monolithically integrated component includes an enhancement...
US20090146154 Transistor with A-Face Conductive Channel and Trench Protecting Well Region  
A transistor structure optimizes current along the A-face of a silicon carbide body to form an AMOSFET that minimizes the JFET effect in the drift region during forward conduction in the on-state....
US20090167662 POWER MOSFET INTEGRATION  
A cellular transistor includes an N-type heavily doped (N+) buried layer (NBL), an N-well connected to the NBL, an N+ layer connected to the N-well and multiple drains. The N-well is formed after...
US20080315246 TRANSISTOR SWITCH CIRCUIT AND SAMPLE-AND-HOLD CIRCUIT  
A transistor switch circuit includes: a MOS transistor in which a channel is formed when a gate-source voltage is zero; and a voltage supply part which is connected to a gate of the MOS transistor...
US20110215372 ESD Protection Devices  
An ESD protection device is provided. The ESD protection device comprises an SCR and an ESD detection circuit. The SCR is coupled between a high voltage and a ground and has a special...
US20060071236 Integrated circuit  
The invention relates to an integrated circuit having a semiconductor component (10) comprising a first p-type region (12) and a first n-type region (11) adjoining the first p-type region (12),...
US20090085059 SEMICONDUCTOR DEVICE INCLUDING ELECTROSTATIC DISCHARGE PROTECTION CIRCUIT  
A SGPMOS transistor includes a base, a P-type diffusion layer, a gate electrode, and a LOCOS oxide film. The base includes at least one of a N-type semiconductor substrate, a P-type semiconductor...
US20140299913 INTEGRATED CIRCUITS USING GUARD RINGS FOR ESD SYSTEMS, AND METHODS FOR FORMING THE INTEGRATED CIRCUITS  
An integrated circuit includes at least one transistor over a substrate, and a first guard ring disposed around the at least one transistor. The integrated circuit further includes a second guard...
US20090212320 Semiconductor devices and semiconductor apparatuses including the same  
Semiconductor devices and semiconductor apparatuses including the same are provided. The semiconductor devices include a body region disposed on a semiconductor substrate, gate patterns disposed...
US20090294798 Bipolar Device Compatible with CMOS Process Technology  
A bipolar device includes: an emitter of a first polarity type constructed on a semiconductor substrate; a collector of the first polarity type constructed on the semiconductor substrate; a gate...
US20090206363 SOLID-STATE SWITCH CAPABLE OF BIDIRECTIONAL OPERATION  
A monolithic switching device including a main semiconductor region configured to provide a current-carrying channel as in the form of two-dimensional electron gas. Disposed symmetrically on a...
US20070018194 Driving circuit  
When a PWM command signal reaches a low level, an input transistor turns on, an on-driving transistor turns off, Darlington-connected off-driving transistors connected in series with the...
US20080042164 POWER SEMICONDUCTOR COMPONENT  
A power semiconductor component is disclosed. One embodiment provides a semiconductor body, in which at least two vertical power semiconductor components are arranged. Each of the vertical power...
US20080157117 Insulated gate bipolar transistor with enhanced conductivity modulation  
A insulated gate bipolar transistors (IGBT) having an enhanced modulation layer provides reduced on-state power dissipation and better conductivity modulation than conventional devices. The IGBT...
US20150236010 ELECTROSTATIC DISCHARGE PROTECTION STRUCTURE CAPABLE OF PREVENTING LATCH-UP ISSUE CAUSED BY UNEXPECTED NOISE  
The electrostatic discharge protection structure includes an N-well disposed on a substrate, a P-well disposed on the substrate and adjacent to the N-well, a first doped region of N-type...
US20070221949 Power Semiconductor Devices  
This invention generally relates to power semiconductor devices, and in particular to improved thyristor devices and circuits. The techniques we describe are particularly useful for so-called...
US20100084631 Phase-controlled field effect transistor device and method for manufacturing thereof  
A phase controllable field effect transistor device is described. The device provides first and second scattering sites disposed at either side of a conducting channel region, the conducting...
US20140027781 MONOLITHIC BIDIRECTIONAL SILICON CARBIDE SWITCHING DEVICES AND METHODS OF FORMING THE SAME  
A monolithic bidirectional switching device includes a drift layer having a first conductivity type and having an upper surface, and first and second vertical metal-oxide semiconductor (MOS)...
US20090309129 Semiconductor ESD Device and Method of Making Same  
A semiconductor device includes an SCR ESD device region disposed within a semiconductor body, and a plurality of first device regions of the first conductivity type disposed on a second device...
US20090032839 Semiconductor Device and Its Driving Method  
A semiconductor device having a thyristor SCR with reduced turn-off time. A third semiconductor region of the second conductivity type (anode AN) and a fourth semiconductor region of the first...
US20090001410 Driver Circuit and Electrical Power Conversion Device  
An electrical power conversion device includes: a switching element in which a principal electrical current flows in a direction from a second electrode towards a first electrode based upon a...
US20130285113 BIDIRECTIONAL ELECTROSTATIC DISCHARGE (ESD) PROTECTION DEVICE  
A bidirectional electrostatic discharge (ESD) protection device includes a substrate having a topside semiconductor surface that includes a first silicon controlled rectifier (SCR) and a second...
US20090316492 MEMORY CELLS, MEMORY CELL ARRAYS, METHODS OF USING AND METHODS OF MAKING  
A semiconductor memory cell and arrays of memory cells are provided In at least one embodiment, a memory cell includes a substrate having a top surface, the substrate having a first conductivity...
US20080308838 Power switching transistors  
In an embodiment, a integrated semiconductor device includes a first Vertical Junction Field Effect Transistor (VJFET) having a source, and a gate disposed on each side of the first VJFET source,...
US20080048208 ELECTROSTATIC DISCHARGE PROTECTION DEVICE FOR AN INTEGRATED CIRCUIT  
An integrated circuit is made of a semiconductor material and comprises an input and/or output terminal connected to an output transistor forming a parasitic element capable of triggering itself...
US20090261379 SEMICONDUCTOR DEVICE WITH A SEMICONDUCTOR BODY AND METHOD FOR ITS PRODUCTION  
A semiconductor device includes an active region with a vertical drift path of a first conduction type and with a near-surface lateral well of a second, complementary conduction type. In addition,...
US20140291721 Surge Protection Circuit for Power MOSFETs used as Active Bypass Diodes in Photovoltaic Solar Power Systems  
A protection circuit for metal-oxide-semiconductor field-effect transistors (MOSFETs) that are used as active bypass diodes in photovoltaic solar power systems is disclosed. The protection circuit...
US20090278166 SEMICONDUCTOR DEVICE  
A semiconductor device in which both an IGBT element region and a diode element region exist in the same semiconductor substrate includes a low lifetime region, which is formed in at least a part...
US20080308839 INSULATED GATE BIPOLAR TRANSISTOR  
The invention realizes IGBT having an NPT structure which has a smaller variation in switching characteristics and the like and lower on-resistance. In the IGBT of the invention, by setting a...
US20120168817 LATERAL EXTENDED DRAIN METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR (LEDMOSFET) HAVING A HIGH DRAIN-TO-BODY BREAKDOWN VOLTAGE (Vb), A METHOD OF FORMING AN LEDMOSFET, AND A SILICON-CONTROLLED RECTIFIER (SCR) INCORPORATING A COMPLEMENTARY PAIR OF LEDMOSFETS  
Disclosed are embodiments of a lateral, extended drain, metal oxide semiconductor, field effect transistor (LEDMOSFET) having a high drain-to-body breakdown voltage. Discrete conductive field (CF)...
US20090050931 SWITCHING ASSEMBLY FOR AN AIRCRAFT IGNITION SYSTEM  
A switching assembly is disclosed for a high voltage aircraft ignition system. The switching assembly includes a ceramic substrate and switch die that includes an anode bonded to an electrical pad...
US20070114565 Integrated field-effect transistor-thyristor device  
An integrated FET-thyristor device includes a semiconductor substrate of a first conductivity type, a first semiconductor region of a second conductivity type formed in the substrate proximate an...
US20120061720 VTS insulated gate bipolar transistor  
In one embodiment, a power transistor device comprises a substrate that forms a PN junction with an overlying buffer layer. The power transistor device further includes a first region, a drift...

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