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US20100027174 |
CIRCUIT FOR PROTECTING AN INTEGRATED CIRCUIT AGAINST ELECTROSTATIC DISCHARGES IN CMOS TECHNOLOGY
The integrated circuit may include at least one electronic protection circuit for protecting against at least one electrostatic discharge and being able to discharge the overvoltage current... |
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US20120068220 |
REVERSE CONDUCTING-INSULATED GATE BIPOLAR TRANSISTOR
According to one embodiment, in a reverse conducting-insulated gate bipolar transistor, the buffer layer is provided on the backside of the second base layer, has a higher impurity concentration... |
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US20120305984 |
SCR/MOS CLAMP FOR ESD PROTECTION OF INTEGRATED CIRCUITS
An electrostatic discharge (ESD) protection circuit, methods of fabricating an ESD protection circuit, methods of providing ESD protection, and design structures for an ESD protection circuit. An... |
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US20110121883 |
SYSTEM AND METHOD FOR PROVIDING SYMMETRIC, EFFICIENT BI-DIRECTIONAL POWER FLOW AND POWER CONDITIONING
A system and method for providing symmetric, efficient bi-directional power flow and power conditioning for high-voltage applications. Embodiments include a first vertical-channel junction gate... |
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US20120211798 |
ADJUSTABLE FIELD EFFECT RECTIFIER
An Adjustable Field Effect Rectifier uses aspects of MOSFET structure together with an adjustment pocket or region to result in a device that functions reliably and efficiently at high voltages... |
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US20090267111 |
MOSFET with Integrated Field Effect Rectifier
A modified MOSFET structure comprises an integrated field effect rectifier connected between the source and drain of the MOSFET to shunt current during switching of the MOSFET. The integrated FER... |
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US20140138735 |
JUNCTION-ISOLATED BLOCKING VOLTAGE DEVICES WITH INTEGRATED PROTECTION STRUCTURES AND METHODS OF FORMING THE SAME
Junction-isolated blocking voltage devices and methods of forming the same are provided. In certain implementations, a blocking voltage device includes an anode terminal electrically connected to... |
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US20100001314 |
Bidirectional switch having control gate embedded in semiconductor substrate and semiconductor device
A bidirectional switch includes a first switch and a second switch. The switch includes a well region of a first-conductivity-type formed on a semiconductor substrate, and serving as drains of the... |
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US20080142834 |
VOLTAGE-CONTROLLED BIDIRECTIONAL SWITCH
A voltage-controlled vertical bidirectional monolithic switch, referenced with respect to the rear surface of the switch, formed from a lightly-doped N-type semiconductor substrate, in which the... |
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US20100032757 |
BI-DIRECTIONAL DMOS WITH COMMON DRAIN
A three terminal bi-directional laterally diffused metal oxide semiconductor (LDMOS) transistor which includes two uni-directional LDMOS transistors in series sharing a common drain node, and... |
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US20070235754 |
Electronic switch circuit
Electronic switch device having a smaller number of component parts. Resistor R1 is connected between gate and source of a PchTr P1 and resistor R2 is connected between gate of the PchTr P1 and... |
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US20090159925 |
BIDIRECTIONAL ELECTRONIC SWITCH
A main semiconductor region grown on a substrate has formed on its surface a pair of main electrodes spaced from each other, a gate electrode between the main electrodes, and a pair of... |
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US20130049065 |
BI-DIRECTIONAL SWITCH WITH Q1 AND Q4 CONTROL
A vertical bidirectional switch of the type having its control referenced to the rear surface, including on its rear surface a first main electrode and on its front surface a second main electrode... |
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US20110049561 |
Solid-State Pinch Off Thyristor Circuits
Provided is a semiconductor bistable switching device that includes a thyristor portion including an anode layer, a drift layer, a gate layer and a cathode layer, the gate layer operable to... |
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US20130113017 |
ELECTRONIC DEVICE FOR PROTECTING FROM ELECTROSTATIC DISCHARGE
A protection device includes a triac and triggering units. Each triggering unit is formed by a MOS transistor configured to operate at least temporarily in a hybrid operating mode and a... |
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US20140104733 |
COMBINATION ESD PROTECTION CIRCUITS AND METHODS
Circuits, integrated circuits, apparatuses, and methods, such as those for protecting circuits against electrostatic discharge events are disclosed. In an example method, a thyristor is triggered... |
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US20100237356 |
BIDIRECTIONAL SILICON CARBIDE TRANSIENT VOLTAGE SUPPRESSION DEVICES
An electronic device includes a silicon carbide layer having a first conductivity type and having a first surface and a second surface opposite the first surface, and first and second silicon... |
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US20140054642 |
ESD PROTECTION DEVICE WITH IMPROVED BIPOLAR GAIN USING CUTOUT IN THE BODY WELL
An integrated circuit includes an NMOS SCR in which a p-type body well of the NMOS transistor provides a base layer for a vertical NPN layer stack. The base layer is formed by implanting p-type... |
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US20150214210 |
Electronic Device and Protection Circuit
An electronic device includes a first device terminal and a second device terminal. A first and a second thyristor are reverse-connected between the two device terminals. A first and a second MOS... |
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US20100044749 |
BIDIRECTIONAL SEMICONDUCTOR DEVICE, METHOD OF FABRICATING THE SAME, AND SEMICONDUCTOR DEVICE INCORPORATING THE SAME
A semiconductor device and a method of fabrication thereof includes a bidirectional device having a high breakdown voltage and a decreased ON voltage. An n-type extended drain region is formed in... |
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US20130207157 |
REVERSE-CONDUCTING POWER SEMICONDUCTOR DEVICE
An exemplary reverse-conducting power semiconductor device with a wafer having a first main side and a second main side parallel to the first main side. The device includes a plurality of diode... |
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US20170033096 |
ESD PROTECTION DEVICE WITH IMPROVED BIPOLAR GAIN USING CUTOUT IN THE BODY WELL
An integrated circuit includes an NMOS SCR in which a p-type body well of the NMOS transistor provides a base layer for a vertical NPN layer stack. The base layer is formed by implanting p-type... |
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US20160322485 |
BIDIRECTIONAL HEMT AND AN ELECTRONIC PACKAGE INCLUDING THE BIDIRECTIONAL HEMT
An electronic device can include a bidirectional HEMT. In an aspect, a packaged electronic device can include the bidirectional HEMT can be part of a die having a die substrate connection that is... |
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US20160240644 |
SEMICONDUCTOR DEVICES AND A METHOD FOR FORMING A SEMICONDUCTOR DEVICE
A semiconductor device includes a first transistor structure including a first transistor body region of a first conductivity type located within a semiconductor substrate. At least part of the... |
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US20160172471 |
REVERSE CONDUCTING INSULATED GATE BIPOLAR TRANSISTOR
A semiconductor layer of a reverse conducting insulated gate bipolar transistor is provided with a barrier region of the first conductive type, wherein the barrier region is disposed in the body... |
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US20150371985 |
POSITIVE STRIKE SCR, NEGATIVE STRIKE SCR, AND A BIDIRECTIONAL ESD STRUCTURE THAT UTILIZES THE POSITIVE STRIKE SCR AND THE NEGATIVE STRIKE SCR
A first silicon controlled rectifier has a breakdown voltage in a first direction and a breakdown voltage in a second direction. A second silicon controlled rectifier has a breakdown voltage with... |
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US20150115313 |
Semiconductor Device Package
In an embodiment, a semiconductor device package includes a bidirectional switch circuit. The bidirectional switch circuit includes a first semiconductor transistor mounted on a first die pad, a... |
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US20140197448 |
Bidirectional Semiconductor Device for Protection against Electrostatic Discharges
An integrated circuit is produced on a bulk semiconductor substrate in a given CMOS technology and includes a semiconductor device for protection against electrostatic discharges. The... |
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US20130264607 |
Reverse Conducting Insulated Gate Bipolar Transistor
A semiconductor includes a drift zone of a first conductivity type arranged between a first side and a second side of a semiconductor body. The semiconductor device further includes a first region... |
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US20120012891 |
VOLTAGE-CONTROLLED BIDIRECTIONAL SWITCH
A voltage-controlled vertical bi-directional monolithic switch, referenced with respect to the rear surface of the switch, formed from a lightly-doped N-type semiconductor substrate, in which the... |