Matches 1 - 4 out of 4


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US20120098029 PHOTONICALLY-ACTIVATED SINGLE-BIASFAST-SWITCHING INTEGRATED THYRISTOR  
Preferred embodiments of the invention include a thyristor core that is single biased by a source, such as a power source (or a portion thereof) that is being switched through the thyristors. An...
US20090250706 LIGHT ACTIVATED SILICON CONTROLLED SWITCH  
The present invention provides an optically triggered switch and a method of forming the optically triggered switch. The optically triggered switch includes a silicon layer having at least one...
US20070120145 Gate turn-off thyristor  
A mesa-type wide-gap semiconductor gate turn-off thyristor has a low gate withstand voltage and a large leakage current. Since the ionization rate of P-type impurities greatly increases at high...
US20130153953 OPTICALLY TRIGGERED SEMICONDUCTOR DEVICE AND METHOD FOR MAKING THE SAME  
A thyristor device includes a semiconductor body and a conductive anode. The semiconductor body has a plurality of doped layers forming a plurality of dopant junctions and includes an optical...
Matches 1 - 4 out of 4