Matches 1 - 29 out of 29


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US20060065908 III-nitride multi-channel heterojunction interdigitated rectifier  
A III-nitride power semiconductor device that includes a plurality of III-nitride heterojunctions.
US20070045656 Design of silicon-controlled rectifier by considering electrostatic discharge robustness in human-body model and charged-device model devices  
A silicon-controlled rectifier apparatus, comprising a substrate upon which a low-voltage triggered silicon-controlled rectifier is configured. A plurality of triggering components (e.g., NMOS...
US20090101938 Electrostatic Discharge Protection Circuit  
The present invention provides an electrostatic discharge (ESD) protection circuit with a silicon controlled rectifier (SCR) having a plurality of SCR fingers (SCRs) with the advantages to couple...
US20060124957 Single-phase converter module  
A converter module is described having a positive terminal (2), a negative terminal (4), and a phase terminal (3), as well as a first semiconductor chip (9) and a second semiconductor chip (9),...
US20050258448 Thyristor component with improved blocking capabilities in the reverse direction  
A thyristor comprises a semiconductor body with a front and back face, an edge, a first semiconductor zone, embodied in the region of the rear face and a second semiconductor zone, adjacent to the...
US20070090392 Low capacitance SCR with trigger element  
A silicon rectifier semiconductor device with selectable trigger and holding voltages includes a trigger element. A first well region of a first conductivity type formed within a semiconductor...
US20140110751 THYRISTOR AND METHOD FOR THE SAME  
A thyristor includes a base region, a pair of first doping regions, at least one second doping region, at least one third doping region, and a pair of metal layers. The first doping regions are...
US20060118811 Bi-directional power switch  
A semiconductor device that is comprised to two or more MOSFETs to form a bi-directional power switch. One embodiment of the bi-directional switch is comprised of (a) a semiconductor substrate...
US20070246737 Electrostatic discharge protection apparatus for integrated circuits  
An electrostatic discharge (ESD) protection apparatus for integrated circuits is provided. The ESD protection apparatus includes an ESD protection device. The ESD protection device is disposed in...
US20070145408 HF control bidirectional switch  
An HF control bi-directional switch component of the type having its gate referenced to the rear surface formed in the front surface of a peripheral well of the component, including two...
US20130320395 HIGH-VOLTAGE VERTICAL POWER COMPONENT  
A vertical power component including: a silicon substrate of a first conductivity type; on the side of a lower surface of the substrate supporting a single electrode, a lower layer of the second...
US20110049561 Solid-State Pinch Off Thyristor Circuits  
Provided is a semiconductor bistable switching device that includes a thyristor portion including an anode layer, a drift layer, a gate layer and a cathode layer, the gate layer operable to...
US20080308837 VERTICAL CURRENT CONTROLLED SILICON ON INSULATOR (SOI) DEVICE SUCH AS A SILICON CONTROLLED RECTIFIER AND METHOD OF FORMING VERTICAL SOI CURRENT CONTROLLED DEVICES  
A Silicon on Insulator (SOI) Integrated Circuit (IC) chip with devices such as a vertical Silicon Controlled Rectifier (SCR), vertical bipolar transistors, a vertical capacitor, a resistor and/or...
US20050205891 Distributed channel bipolar devices and architectures  
A new distributed channel bipolar device (DCBD) has a large channel of a selected shape formed in a surface of a substrate by doping or by influencing of a coating. The channel acts as a collector...
US20130285111 DIODE-TRIGGERED SILICON CONTROLLED RECTIFIER WITH AN INTEGRATED DIODE  
Device structures, design structures, and fabrication methods for a silicon controlled rectifier. A well of a first conductivity type is formed in a device region, which may be defined from a...
US20140124828 ESD PROTECTION CIRCUIT WITH ISOLATED SCR FOR NEGATIVE VOLTAGE OPERATION  
A semiconductor controlled rectifier (FIG. 4A) for an integrated circuit is disclosed. The semiconductor controlled rectifier comprises a first lightly doped region (100) having a first...
US20100270584 Semiconductor Switching Device with Gate Connection  
The present disclosure provides a semiconductor switching device including a substrate having deposited thereon a cathode, an anode and a gate of the semiconductor switching device, and a...
US20100127304 BIPOLAR SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD  
A bipolar semiconductor device and manufacturing method. One embodiment provides a diode structure including a structured emitter coupled to a first metallization is provided. The structured...
US20050242367 Thin-film electronic device, in particular power device, and method for making same  
Thin-layer electronic device, in particular a thin-layer power device, and process for fabricating this device. According to the invention, an electronic device is formed comprising an active part...
US20160141416 SEMICONDUCTOR DEVICES AND FABRICATION METHODS  
Methods of fabricating vertical devices are described, along with apparatuses and systems that include them. In one such method, a vertical device is formed at least partially in a void in a first...
US20150349101 INJECTION CONTROL IN SEMICONDUCTOR POWER DEVICES  
Semiconductor power devices can be formed on substrate structure having a lightly doped semiconductor substrate of a first conductivity type or a second conductivity type opposite to the first...
US20150333068 THYRISTOR RANDOM ACCESS MEMORY  
Devices and methods for forming a device are presented. The device includes a substrate having a well of a first polarity type and a thyristor-based memory cell. The thyristor-based memory cell...
US20140145238 SEMICONDUCTOR DEVICES AND FABRICATION METHODS  
Methods of fabricating vertical devices are described, along with apparatuses and systems that include them. In one such method, a vertical device is formed at least partially in a void in a first...
US20140034998 Semiconductor Device with Laterally Varying Doping Concentrations  
A semiconductor device includes a semiconductor body including a first surface having a normal direction defining a vertical direction, a first n-type semiconductor region arranged below the first...
US20140015001 THYRISTOR RANDOM ACCESS MEMORY DEVICE AND METHOD  
Memory devices and methods of making memory devices are shown. Methods and configurations as shown provide folded and vertical memory devices for increased memory density. Methods provided reduce...
US20120080716 INITIAL-ON SCR DEVICE FOR ON-CHIP ESD PROTECTION  
A semiconductor device for electrostatic discharge (ESD) protection comprises a silicon controlled rectifier (SCR) including a semiconductor substrate, a first well formed in the substrate, a...
US20120018738 ELECTRONIC DEVICE STRUCTURE WITH A SEMICONDUCTOR LEDGE LAYER FOR SURFACE PASSIVATION  
Electronic device structures including semiconductor ledge layers for surface passivation and methods of manufacturing the same are disclosed. In one embodiment, the electronic device includes a...
US20110316042 THYRISTOR RANDOM ACCESS MEMORY DEVICE AND METHOD  
Memory devices and methods of making memory devices are shown. Methods and configurations as shown provide folded and vertical memory devices for increased memory density. Methods provided reduce...
US20110024791 BIPOLAR SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD  
A bipolar semiconductor device and method are provided. One embodiment provides a bipolar semiconductor device including a first semiconductor region of a first conductivity type having a first...

Matches 1 - 29 out of 29