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US20060076547 Three-dimensional viewing and editing of microcircuit design  
An editing tool that provides a user interface for displaying and editing a representation of a microcircuit design. More particularly, the user interface displays a three dimensional...
US20080224115 Fabricating a Set of Semiconducting Nanowires, and Electric Device Comprising a Set of Nanowires  
The method of fabricating a set of semiconducting nanowires (10) having a desired wire diameter (d) comprises the steps of providing a set of pre-fabricated semiconducting nanowires (10′), at...
US20130026434 MEMRISTOR WITH CONTROLLED ELECTRODE GRAIN SIZE  
A memristor with a controlled electrode grain size includes an adhesion layer, a first electrode having a first surface contacting the adhesion layer and a second surface opposite the first...
US20120001146 NANOSCALE METAL OXIDE RESISTIVE SWITCHING ELEMENT  
A non-volatile memory device structure. The non-volatile memory device structure comprises a first electrode formed from a first metal material, a resistive switching element overlying the first...
US20140166957 HYBRID CIRCUIT OF NITRIDE-BASED TRANSISTOR AND MEMRISTOR  
A hybrid circuit comprises a nitride-based transistor portion and a memristor portion. The transistor includes a source and a drain and a gate for controlling conductance of a channel region...
US20120007031 PHASE CHANGE MEMORY CELL WITH HEATER AND METHOD THEREFOR  
A method for forming a phase change memory cell (PCM) includes forming a heater for the phase change memory and forming a phase change structrure electrically coupled to the heater. The forming a...
US20090283735 CARBON NANO-FILM REVERSIBLE RESISTANCE-SWITCHABLE ELEMENTS AND METHODS OF FORMING THE SAME  
Methods of forming a microelectronic structure are provided, the microelectronic structure including a first conductor, a discontinuous film of metal nanoparticles disposed on a surface above the...
US20110297909 MAGNETIC MEMORY ELEMENT AND MAGNETIC MEMORY  
A magnetic memory element includes: a first magnetization free layer formed of a ferromagnetic material having perpendicular magnetic anisotropy; a second magnetization free layer provided near...
US20120280196 ELECTROFORMING FREE MEMRISTOR  
An electroforming free memristor (100) includes a first electrode (102), a second electrode (104) spaced from the first electrode, and a switching layer (110) positioned between the first...
US20130234087 NON-VOLATILE RESISTANCE CHANGE DEVICE  
A non-volatile resistance change device includes a first electrode made of a metallic element, a second electrode, a variable resistance layer formed between the first electrode and the second...
US20100301299 Material and device properties modification by electrochemical charge injection in the absence of contacting electrolyte for either local spatial or final states  
In some embodiments, the present invention is directed to processes for the combination of injecting charge in a material electrochemically via non-faradaic (double-layer) charging, and retaining...
US20120298946 Shaping a Phase Change Layer in a Phase Change Memory Cell  
A phase change memory cell includes a phase change layer of a phase change material on a semiconductor body. A hard mask structure is formed on the phase change layer and a resist mask is formed...
US20070228353 ELECTRONIC CROSSBAR SYSTEM FOR ACCESSING ARRAYS OF NANOBATTERIES FOR MASS MEMORY STORAGE AND SYSTEM POWER  
A sequence or array of electrochemical cells storing both digital and analog data. Both binary code and codes having base may be stored in the memory device to increase information density. Such...
US20130320285 FIELD FOCUSING FEATURES IN A RERAM CELL  
A resistive random access memory (ReRAM) cell comprising a first conductive electrode and a dielectric storage material layer over the first conductive electrode. The dielectric storage material...
US20100002491 RESISTANCE RAM HAVING OXIDE LAYER AND SOLID ELECTROLYTE LAYER, AND METHOD FOR OPERATING THE SAME  
A resistance RAM that is provided with an oxide layer and a solid electrolyte layer, and a method for operating the same are provided. The resistance RAM comprises a first electrode, an oxide...
US20120199804 HETEROJUNCTION OXIDE NON-VOLATILE MEMORY DEVICE  
A memory device includes a first metal layer and a first metal oxide layer coupled to the first metal layer. The memory device includes a second metal oxide layer coupled to the first metal oxide...
US20120228573 Memory Cell Constructions, and Methods for Fabricating Memory Cell Constructions  
Some embodiments include methods for fabricating memory cell constructions. A memory cell may be formed to have a programmable material directly against a material having a different coefficient...
US20110240941 Silicon-Based Memristive Device  
A memristive device (100) includes a first and a second electrode (110, 115); a silicon memristive matrix (105) interposed between the first electrode (110) and the second electrode (115); and a...
US20120025379 FRONT-END PROCESSING OF NICKEL PLATED BOND PADS  
A front-end method of fabricating nickel plated caps over copper bond pads used in a memory device. The method provides protection of the bond pads from an oxidizing atmosphere without exposing...
US20090161420 FIELD-EMITTER-BASED MEMORY ARRAY WITH PHASE-CHANGE STORAGE DEVICES  
Embodiments of the present invention include systems and methods for three-terminal field-emitter triode devices, and memory arrays utilizing the same. In other embodiments, the field-emitter...
US20140014888 Thermally-Confined Spacer PCM Cells  
A memory device includes an array of contacts and a patterned insulating layer over the array of contacts. The patterned insulating layer includes a trench. The trench includes a sidewall aligned...
US20120280197 FLAT LOWER BOTTOM ELECTRODE FOR PHASE CHANGE MEMORY CELL  
A phase change memory cell having a flat lower bottom electrode and a method for fabricating the same. The method includes forming a dielectric layer over a substrate including an array of...
US20110210300 Reducing Temporal Changes in Phase Change Memories  
A phase change memory in the reset state may be heated to reduce or eliminate electrical drift.
US20060261321 Low power phase change memory cell with large read signal  
A memory cell includes a first electrode, a second electrode, and phase-change material including a first portion contacting the first electrode, a second portion contacting the second electrode,...
US20130320284 FIELD FOCUSING FEATURES IN A RERAM CELL  
A resistive random access memory (ReRAM) cell, comprising a first conductive electrode and a dielectric storage material layer over the first conductive electrode. The dielectric storage material...
US20130228736 MEMORY DEVICE  
According to one embodiment, a memory device includes a first electrode, a second electrode, and a variable resistance film. The variable resistance film is connected between the first electrode...
US20140133210 VARIABLE RESISTIVE ELEMENT, STORAGE DEVICE AND DRIVING METHOD THEREOF  
An element according to an embodiment can transit between at least two states including a low-resistance state and a high-resistance state. The element comprises a first electrode, a second...
US20070085068 Spin transfer based magnetic storage cells utilizing granular free layers and magnetic memories using such cells  
A method and system for providing a magnetic element and a memory incorporating the magnetic element is described. The method and system for providing the magnetic element include providing a...
US20120037871 NOVEL BIFUNCTIONAL MOLECULES COMPRISING A CYCLOALKYNE OR HETEROCYCLOALKYNE GROUP AND A REDOX GROUP  
The invention relates to compounds comprising a cycloalkyne or heterocycloalkyne group and a redox group. Said compounds are of general formula (I) wherein Z is a cycloalkyne or heterocycloalkyne...
US20110084247 Self-Aligned Bipolar Junction Transistors  
A plurality of bipolar transistors are formed by forming a common conduction region, a plurality of control regions extending each in an own active areas on the common conduction region, a...
US20110297908 Phase Change Memory Cells and Fabrication Thereof  
A phase change memory cell, e.g. a line-cell (2), and fabrication thereof, the cell comprising: two electrodes (6, 8); phase change memory material (10) and a dielectric barrier (12). The...
US20130168628 VARIABLE RESISTANCE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME  
A variable resistance memory device includes a first trench extending in a first direction formed in a first insulation layer, a first conductive layer in the first trench, a protective layer over...
US20110220859 Two-Terminal Nanotube Devices And Systems And Methods Of Making Same  
A two terminal memory device includes first and second conductive terminals and a nanotube article. The article has at least one nanotube, and overlaps at least a portion of each of the first and...
US20070221613 Structure for stopping mechanical cracks in a substrate wafer, use of the structure and a method for producing the structure  
A structure for stopping mechanical cracks in a substrate wafer used for semiconductor device manufacturing, especially a silicon wafer, is described. The structure includes at least one...
US20110024710 MEMRISTOR WITH A NON-PLANAR SUBSTRATE  
A memristor includes a substrate having a plurality of protrusions, wherein each of the plurality of protrusions extends in a first direction, a first electrode provided over at least one of the...
US20060208247 Method and system for an integrated circuit supporting auto-sense of voltage for drive strength adjustment  
Certain embodiments of the invention may be found in a method for integrated circuit supporting auto-sense of voltage for drive strength adjustment. The method may comprise detecting an input...
US20120280195 RESISTANCE VARIABLE MEMORY CELLS AND METHODS  
Resistance variable memory cells and methods are described herein. One or more methods of forming a resistance variable memory cell include forming a silicide material on a terminal of a select...
US20130299763 VARIABLE RESISTANCE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME  
A variable resistance memory device that includes a first electrode, a second electrode, a variable resistance layer interposed between the first electrode and a second electrode. A metal oxide...
US20120104342 Memristive Device  
A memristive device includes a first electrode, a second electrode crossing the first electrode at a non-zero angle, and an active region disposed between the first and second electrodes. The...
US20110193042 MEMORY CELL FORMED USING A RECESS AND METHODS FOR FORMING THE SAME  
In a first aspect, a method of forming a memory cell is provided, the method including: (1) forming a pillar above a substrate, the pillar comprising a steering element and a metal hardmask layer;...
US20140027697 MAGNETIC RANDOM ACCESS MEMORY WITH SWITCHING ASSIST LAYER  
A STTMRAM element includes a magnetization layer made of a first free layer and a second free layer, separated by a non-magnetic separation layer (NMSL), with the first and second free layers each...
US20070164264 Storage system using an array of electro-magnetic sensors  
A record carrier (40) of a removable type has an information plane that is provided with a pattern of an electro-magnetic material constituting an array of bit locations (11). The presence or...
US20080029481 METHODS FOR REDUCING SURFACE CHARGES DURING THE MANUFACTURE OF MICROELECTROMECHANICAL SYSTEMS DEVICES  
Provided herein are methods for preventing the formation and accumulation of surface-associated charges, and deleterious effects associated therewith, during the manufacture of a MEMS device. In...
US20070175863 Single Wafer Etching Apparatus and Single Wafer Etching Method  
An object of the present invention is to provide a single wafer etching apparatus realizing a high flatness of wafers and an increase in productivity thereof. In the single wafer etching...
US20130200321 POST-FABRICATION SELF-ALIGNED INITIALIZATION OF INTEGRATED DEVICES  
Defining an active region of a phase change memory (PCM) cell including depositing a first layer of material having a first chemical composition. A second layer of material having a second...
US20120211715 SEMICONDUCTOR DEVICE INCLUDING PHASE CHANGE MATERIAL AND METHOD OF MANUFACTURING SAME  
Disclosed herein is a device that includes: an interlayer insulation film having a through hole; and a phase change storage element provided in the through hole. The phase change storage element...
US20140097395 RESISTIVE MEMORY DEVICE FABRICATED FROM SINGLE POLYMER MATERIAL  
A polymer-based device comprising a substrate; a first electrode disposed on the substrate; an active polymer layer disposed on and in contact with the first electrode; and a second electrode...
US20060138392 Mild methods for generating patterned silicon surfaces  
The invention provides methods for making self-assembling monolayers on silicon surfaces using mild conditions.
US20140166956 Using saturated and unsaturated ALD processes to deposit oxides as ReRAM switching layer  
A nonvolatile memory device contains a resistive switching memory element with improved device switching performance and lifetime by custom tailoring the average concentration of defects in the...
US20130001494 Memory Cell  
A memory cell includes a memory element, a current-limiting element electrically coupled to the memory element, and a high-selection-ratio element electrically coupled to the current-limiting...

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