Matches 1 - 50 out of 201 1 2 3 4 5 >


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US20130337602 Sputtering Target Including a Feature to Reduce Chalcogen Build Up and Arcing on a Backing Tube  
A sputtering target has a cylindrical backing tube having two edges and a sidewall comprising a middle portion located between two end portions. The sputtering material is on the backing tube. The...
US20110067997 SYNTHESIS OF HIGH-PURITY BULK COPPER INDIUM GALLIUM SELENIDE MATERIALS  
A method for forming a high purity, copper indium gallium selenide (CIGS) bulk material is disclosed. The method includes sealing precursor materials for forming the bulk material in a reaction...
US20150211107 METHOD FOR PREPARING HIGH-PERFORMANCE TANTALUM TARGET  
A method for preparing a high-performance tantalum target, a high-performance target prepared by the method, and a use of the high-performance target. The method for preparing the high-performance...
US20130146444 Magnetron With Gradually Increasing Magnetic Field Out of Turnarounds  
A magnetron include a center plurality of magnets and an outer plurality of magnets arranged around the center plurality of magnets in a shape of two long sections and two shorter turnaround...
US20110061724 Photovoltaic Cell Module And Method Of Forming Same  
A photovoltaic cell module, a photovoltaic array including at least two modules, and a method of forming the module are provided. The photovoltaic cell module includes a substrate and a tie layer...
US20120164051 METHOD FOR THE PRODUCTION OF OXIDE AND NITRIDE COATINGS AND ITS USE  
The present invention relates to a method for the enhanced production of insulating layers by High Power Impulse Magnetron Sputtering (HiPIMS) or High Power Pulsed Magnetron Sputtering (HPPMS)....
US20150255640 Nanostructured Solar Cell  
Systems and methods for fabrication of nanostructured solar cells having arrays of nanostructures are described, including nanostructured solar cells having a repeating pattern of pyramid...
US20090166577 Electrode of Supercapacitor and Method for Manufacturing the Same  
A method for manufacturing an electrode of a supercapacitor is provided. First, a poly(acrylonitrile) (PAN) fabric is provided. The PAN fabric includes a plurality of PAN fibers each having a...
US20120048726 METHODS OF SPUTTERING USING A NON-BONDED SEMICONDUCTING TARGET  
A sputtering cathode is generally provided. The sputtering cathode can include a semiconducting target (e.g., a cadmium sulfide target, a cadmium tin oxide target, etc.) defining a sputtering...
US20140224646 SILVER SELENIDE FILM STOICHIOMETRY AND MORPHOLOGY CONTROL IN SPUTTER DEPOSITION  
A method of sputter depositing silver selenide and controlling the stoichiometry and nodular defect formations of a sputter deposited silver-selenide film. The method includes depositing...
US20130008778 PHYSICAL VAPOR DEPOSITION CHAMBER WITH CAPACITIVE TUNING AT WAFER SUPPORT  
In a plasma enhanced physical vapor deposition of a material onto workpiece, a metal target faces the workpiece across a target-to-workpiece gap less than a diameter of the workpiece. A carrier...
US20110171395 METHOD OF FORMING A SPUTTERING TARGET  
A sputtering target, including a sputtering layer and a support structure. The sputtering layer includes an alkali-containing transition metal. The support structure includes a second material...
US20110011460 Chalcogenide-Based Photovoltaic Devices and Methods of Manufacturing the Same  
In one example embodiment, a method includes sputtering one or more absorber layers over a substrate. In a particular embodiment, the substrate is pre-heated to a substrate temperature of at least...
US20120118726 IN-GA-ZN-O TYPE SPUTTERING TARGET  
A sputtering target including an oxide sintered body which includes In, Ga and Zn and includes a structure having a larger In content than that in surrounding structures and a structure having...
US20090116169 Alpha Tantalum Capacitor Plate  
A method for forming an alpha-tantalum layer comprising disposing a nitrogen containing base layer on a semiconductor substrate, bombarding the nitrogen containing base layer with a bombarding...
US20140042018 SPUTTERING TARGET AND METHOD FOR USING THE SPUTTERING TARGET  
To provide a sputtering target with which a crystalline metal oxide film can be formed. The sizes of crystal grains or crystal regions of the metal oxide included in the sputtering target are made...
US20100181706 Radiation Arrangement  
The invention relates in general level to radiation transference techniques as applied for utilisation of material handling. The invention relates to a radiation source arrangement comprising a...
US20100140079 PREPARATION OF A PH SENSOR, THE PREPARED PH SENSOR, SYSTEM COMPRISING THE SAME AND MEASUREMENT USING THE SYSTEM  
Preparation of a pH sensor, the prepared pH sensor, system comprising the same, and measurement using the system. The pH sensor is an extended gate field effect transistor (EGFET) structure. The...
US20070056846 Silicon dot forming method and silicon dot forming apparatus  
A substrate is accommodated in a vacuum chamber provided with a silicon sputter target, a sputtering gas (typically a hydrogen gas) is supplied into the vacuum chamber, a high-frequency power is...
US20150129416 METHOD FOR USING SPUTTERING TARGET AND METHOD FOR MANUFACTURING OXIDE FILM  
A method for using a sputtering target which enables an oxide film with a high degree of crystallinity, which contains a plurality of metal elements, to be formed is provided. In the method for...
US20140252354 SPUTTERING TARGET  
A sputtering target including a sintered body: the sintered body including:indium oxide doped with Ga or indium oxide doped with Al, anda positive tetravalent metal in an amount of exceeding 100...
US20140339074 WAFER CLAMP ASSEMBLY FOR HOLDING A WAFER DURING A DEPOSITION PROCESS  
A wafer clamp assembly for holding a wafer during a deposition process comprises an outer annular member defining a central recess that has a diameter slightly greater than the diameter of the...
US20130285065 PVD BUFFER LAYERS FOR LED FABRICATION  
Fabrication of gallium nitride-based light devices with physical vapor deposition (PVD)-formed aluminum nitride buffer layers is described. Process conditions for a PVD AlN buffer layer are also...
US20080092945 Semiconductor Grain and Oxide Layer for Photovoltaic Cells  
Photovoltaic structures for the conversion of solar irradiance into electrical free energy. In a particular implementation, a photovoltaic cell includes a granular semiconductor and oxide layer...
US20050103621 Silver selenide sputtered films and method and apparatus for controlling defect formation in silver selenide sputtered films  
Method and apparatus for sputter depositing silver selenide and controlling defect formation in and on a sputter deposited silver selenide film are provided. A method of forming deposited silver...
US20120211354 UNIFORMITY TUNING CAPABLE ESC GROUNDING KIT FOR RF PVD CHAMBER  
Embodiments of the invention generally relate to a grounding kit for a semiconductor processing chamber, and a semiconductor processing chamber having a grounding kit. More specifically,...
US20080169186 MAGNETRON SPUTTERING APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE  
A magnetron sputtering apparatus includes a vacuum chamber, a target and a substrate holder disposed to face one another in the vacuum chamber, a magnetron disposed on the target side which is...
US20130341181 ZINC OXIDE-BASED SPUTTERING TARGET, METHOD OF MANUFACTURING THE SAME, AND THIN-FILM TRANSISTOR HAVING BARRIER LAYER DEPOSITED USING THE SAME  
A zinc oxide (ZnO)-based sputtering target, a method of manufacturing the same, and a thin-film transistor (TFT) having a barrier layer deposited using the same. The zinc oxide-based sputtering...
US20090166640 Copper wire, method for fabricating the same, and thin film transistor substrate with the same  
The present invention relates to a copper wire in a semiconductor device in which a barrier layer is formed for improving adhesion of a copper wire without any additional fabricating step; a...
US20150047972 METHOD OF MANUFACTURING TARGET FOR SPUTTERING AND METHOD OF MANUFACTURING ORGANIC LIGHT-EMITTING DISPLAY APPARATUS  
A method of manufacturing a sputtering target includes: preparing a sputtering target material including a low temperature viscosity transition (LVT) inorganic material, melting the sputtering...
US20060118407 Methods for making low silicon content ni-si sputtering targets and targets made thereby  
A method for making nickel/silicon sputter targets, targets made thereby and sputtering processes using such targets. Molten nickel is blended with sufficient molten silicon and cast to form an...
US20110180763 OXIDE SINTERED BODY AND SPUTTERING TARGET  
An oxide sintered body includes indium oxide and gallium solid-solved therein, the oxide sintered body having an atomic ratio “Ga/(Ga+In)” of 0.001 to 0.12, containing indium and gallium in an...
US20060151314 Sputtering system and manufacturing method of thin film  
It is an object to provide a sputtering system that enables forming a high-quality thin film including no impurity, and it is also an object of the present invention to provide a method for...
US20100078315 MICROSTRIP ANTENNA ASSISTED IPVD  
The invention provides a microwave source to assist in sputtering deposition. Such a microwave source comprises a microstrip antenna that is attached to an end of a dielectric layer outside a...
US20120298194 METHOD FOR PRODUCING A SUBSTRATE HAVING A COLORED INTERFERENCE FILTER LAYER, THIS SUBSTRATE CONTAINING A COLORED INTERFERENCE FILTER LAYER, THE USE OF THIS SUBSTRATE AS A COLORED SOLAR CELL OR AS A COLORED SOLAR MODULE OR AS A COMPONENT THEREOF, AS WELL AS AN ARRAY INCLUDING AT LEAST TWO OF THESE SUBSTRATES  
A colored substrate and a method for producing a substrate having a colored interference filter layer containing a polycrystalline metal oxide or polycrystalline metal oxides with the aid of...
US20120003836 MOVABLE GROUND RING FOR A PLASMA PROCESSING CHAMBER  
A movable ground ring of a movable substrate support assembly is described. The movable ground ring is configured to fit around and provide an RF return path to a fixed ground ring of the movable...
US20080011603 Ultra high vacuum deposition of PCMO material  
Systems and methods are disclosed to form an exemplary memory structure by forming patterned semiconductor structures on a wafer; moving the wafer to a back-biased FTS deposition chamber;...
US20110127157 LOW IMPEDANCE PLASMA  
A magnetron sputtering apparatus (100) comprising: a magnetic array arranged to create a magnetic field (103) in the vicinity of a tubular target (2) which target at least partially surrounds the...
US20150263210 CIS/CGS/CIGS THIN-FILM MANUFACTURING METHOD AND SOLAR CELL MANUFACTURED BY USING THE SAME  
Provided are a CIS/CGS/CIGS thin-film manufacturing method and a solar cell manufactured by using the same. The CIS/CGS/CIGS thin-film manufacturing method enables CIS, CGS, and CIGS thin-films...
US20150263199 TANDEM SOLAR CELL WITH IMPROVED ABSORPTION MATERIAL  
A photosensitive device and method includes a top cell having an N-type layer, a P-type layer and a top intrinsic layer therebetween. A bottom cell includes an N-type layer, a P-type layer and a...
US20110278510 Tin-Doped Indium Oxide Thin Films And Method For Making Same  
The tin-doped indium oxide thin film in accordance with the present invention has a tin-doped indium oxide, yttrium ions and europium ions, wherein the yttrium ions are proportional to 0.1-10 mol...
US20080092946 Semiconductor Grain Microstructures for Photovoltaic Cells  
Photovoltaic structures for the conversion of solar irradiance into electrical free energy. In particular implementations, the novel photovoltaic structures can be fabricated using low cost and...
US20110108116 P-type NiO conducting film for organic solar cell, a method for preparation of NiO conducting film, and an organic solar cell with enhanced light-to-electric energy conversion using the same  
A p-type NiO conducting film for an organic solar cell, a preparation method thereof, and an organic solar cell using the same and having enhanced power conversion efficiency, are provided,...
US20080264777 THIN FILM SEMICONDUCTOR MATERIAL PRODUCED THROUGH REACTIVE SPUTTERING OF ZINC TARGET USING NITROGEN GASES  
The present invention generally comprises a semiconductor film and the reactive sputtering process used to deposit the semiconductor film. The sputtering target may comprise pure zinc (i.e.,...
US20080035471 Silicon object forming method and apparatus  
A silicon object formation target substrate is arranged in a first chamber, a silicon sputter target is arranged in a second chamber communicated with the first chamber, plasma for chemical...
US20110306165 METHOD FOR PRODUCING a-IGZO OXIDE THIN FILM  
There is provided a method for producing an a-IGZO oxide thin film by sputtering, which can control the carrier density of the film to a given value with high reproducibility. The method is an...
US20140174914 Methods and Systems for Reducing Particles During Physical Vapor Deposition  
Embodiments provided herein describe methods and systems for depositing material onto a surface. A target including a material in a porous state is provided. The density of the material in the...
US20090233424 THIN FILM METAL OXYNITRIDE SEMICONDUCTORS  
The present invention generally relates to a semiconductor film and a method of depositing the semiconductor film. The semiconductor film comprises oxygen, nitrogen, and one or more elements...
US20090236603 PROCESS FOR FORMING A WIRING FILM, A TRANSISTOR, AND AN ELECTRONIC DEVICE  
A wiring film having excellent adhesion and a low resistance is formed. A barrier film having copper as a main component and containing oxygen is formed on an object to form a film thereon by...
US20150179860 CHALCOGENIDE-BASED MATERIALS AND IMPROVED METHODS OF MAKING SUCH MATERIALS  
The present invention provides strategies for making high quality CIGS photoabsorbing materials from precursor films that incorporate a sub-stoichiometric amount of chalcogen(s). Chalcogen(s) are...

Matches 1 - 50 out of 201 1 2 3 4 5 >