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US20120308783 METHOD OF CREATING TWO-SIDED TEMPLATE FROM A SINGLE RECORDED MASTER  
The embodiments disclose a method of creating two-sided template from a single recorded master, including fabricating a first template using a single recorded master, wherein the first template...
US20150075714 PLASMA SPRAY COATING ENHANCEMENT USING PLASMA FLAME HEAT TREATMENT  
A method for forming a plasma resistant ceramic coating on an article includes placing the article into a chamber or spray cell of a plasma spraying system. A ceramic powder is then fed into the...
US20120241284 Plasma Sterilization and Cleaning Treatment Device for Escalator, and Escalator Using the Same  
Sterilization and cleaning of an escalator hand rail are performed. A sterilization and cleaning device including a hand rail; a plasma source for irradiating the hand rails with ions or radicals...
US20090130394 Laser marking of a card  
The invention relates to a method for the laser marking of a support having a body and a cover sheet. A laser beam is used to etch the body of the support through the thickness of the cover sheet....
US20120043021 ADJUSTABLE CONFINEMENT RING ASSEMBLY  
A plasma confinement assembly for a semiconductor processing chamber is provided. The assembly includes a plurality of confinement rings disposed over each other, and each of the plurality of...
US20140017901 VAPOUR ETCH OF SILICON DIOXIDE WITH IMPROVED SELECTIVITY  
The etching of a sacrificial silicon dioxide (SiO2) portion in a microstructure such as a microelectro-mechanical structures (MEMS) by the use an etchant gas, namely hydrogen fluoride (HF) vapour...
US20130192460 GRAPHENE MEMBRANE WITH REGULAR ANGSTROM-SCALE PORES  
Technologies are generally described for perforated graphene monolayers and membranes containing perforated graphene monolayers. An example membrane may include a graphene monolayer having a...
US20150262795 VACUUM TRAP  
A vacuum trap, a plasma etch system using the vacuum trap and a method of cleaning the vacuum trap. The vacuum trap includes a baffle housing; and a removable baffle assembly disposed in the...
US20130248112 VACUUM TRAP  
A vacuum trap, a plasma etch system using the vacuum trap and a method of cleaning the vacuum trap. The vacuum trap includes a baffle housing; and a removable baffle assembly disposed in the...
US20110232847 QUARTZ GLASS MEMBER FOR PLASMA ETCHING  
Provided is a doped quartz glass member for plasma etching, which is used in a plasma etching process and is free from any problematic fluoride accumulation during use. The quartz glass member for...
US20080078503 Mechanical pump operating well for a long term and method of manufacturing the same  
A mechanical pump of the present invention is applied to, for example, a screw pump A for exhausting a gas from a processing chamber. The screw pump comprises a gas-exposed region exposed to the...
US20120222813 VACUUM CHAMBERS WITH SHARED PUMP  
Embodiments of the present disclosure generally relate to vacuum processing chambers having different pumping requirements and connected to a shared pumping system through a single foreline. In...
US20130014898 PLASMA BREAKERS AND METHODS THEREFOR  
A plasma processing system comprising of a plasma source having a source enclosure for generating plasma is provided. The plasma processing system also includes a plasma breaker disposed inside...
US20130240142 ISOLATION BETWEEN A BAFFLE PLATE AND A FOCUS ADAPTER  
A device is provided for preventing contact between a baffle plate and a focus adapter in the upper chamber of an ashing system. The device includes a housing, a baffle plate including a plurality...
US20130112337 SHOWER PLATE, MANUFACTURING METHOD OF THE SHOWER PLATE, AND PLASMA PROCESSING APPARATUS USING THE SHOWER PLATE  
A manufacturing method of a shower plate includes inserting a green body, a degreasing body, a temporary sintered body or a sintered body of a ceramic member, which has a plurality of gas...
US20150136730 VAPOR PHASE CHEMICAL MECHANICAL POLISHING OF MAGNETIC RECORDING DISKS  
A method for polishing a carbon overcoat of a magnetic media that results in a smooth surface free of carbon cluster debris. The method involves forming a magnetic disk having a carbon overcoat...
US20060213842 Supporting shelf for front opening unified pod  
A support extendible shelf for a container such as a Front Opening Unified Pod (“FOUP”) wafer container. The shelf may host a FOUP designed for large diameter wafers such as 200 mm or greater...
US20130095666 PLASMA CONFINEMENT RINGS INCLUDING RF ABSORBING MATERIAL FOR REDUCING POLYMER DEPOSITION  
Plasma confinement rings are adapted to reach sufficiently high temperatures on plasma-exposed surfaces of the rings to substantially reduce polymer deposition on those surfaces. The plasma...
US20120325407 PLASMA CONFINEMENT RINGS HAVING REDUCED POLYMER DEPOSITION CHARACTERISTICS  
Plasma confinement ring assemblies are provided that include confinement rings adapted to reach sufficiently high temperatures on plasma-exposed surfaces of the rings to avoid polymer deposition...
US20110088846 PLASMA SOURCE  
A plasma source is disclosed. The plasma source includes: a disc-shaped core; “m” number of hubs, “m” being a positive integer, each hub extending a certain length in a horizontal spiral from the...
US20090178763 SHOWERHEAD INSULATOR AND ETCH CHAMBER LINER  
The present invention generally comprises a showerhead insulator for electrically isolating a showerhead assembly from a processing chamber wall, a chamber liner assembly for lining a processing...
US20140329390 PLASMA TREATMENT METHOD AND PLASMA TREATMENT DEVICE  
A plasma treatment device includes a dielectric window containing SiO2. The insulating film to be etched comprises silicon carbonitride. In a first plasma treatment step, a processing gas which...
US20120298133 ANTI-SMUDGING, BETTER GRIPPING, BETTER SHELF-LIFE OF PRODUCTS AND SURFACES  
A device to provide improved anti-smudging, better gripping and longer shelf-life to products and surfaces includes an electric superheated steam generator and an electric low-ion plasma generator...
US20120238101 SELECTIVITY IN A XENON DIFLUORIDE ETCH PROCESS  
A method and an apparatus for etching microstructures and the like that provides improved selectivity to surrounding materials when etching silicon using xenon difluoride (XeF2). Etch selectivity...
US20120247672 CEILING ELECTRODE PLATE AND SUBSTRATE PROCESSING APPARATUS  
In a plasma processing apparatus, a ceiling electrode plate provided to face a substrate holding stage via a process space contacts and is supported by an electrode support by interposing a...
US20090170324 Reducing adherence in a MEMS device  
In one embodiment, an apparatus for reducing adherence in a micro-electromechanical system (MEMS) device comprises a substrate. A MEMS is disposed outwardly from the substrate. The MEMS comprises...
US20080264564 Method of reducing the erosion rate of semiconductor processing apparatus exposed to halogen-containing plasmas  
A ceramic article useful in semiconductor processing, which is resistant to erosion by halogen-containing plasmas. The ceramic article is formed from a combination of yttrium oxide and zirconium...
US20090250169 LOWER LINER WITH INTEGRATED FLOW EQUALIZER AND IMPROVED CONDUCTANCE  
A plasma processing chamber has a lower liner with an integrated flow equalizer. In an etching process, the processing gases may be unevenly drawn from the processing chamber which may cause an...
US20130292055 INSULATED DIELECTRIC WINDOW ASSEMBLY OF AN INDUCTIVELY COUPLED PLASMA PROCESSING APPARATUS  
An insulated dielectric window assembly comprising a dielectric window of an inductively coupled plasma processing apparatus; an upper polymeric ring, and a lower polymeric ring. The upper...
US20150187543 PLASMA EQUIPMENT FOR TREATING POWDER  
A powder plasma processing apparatus is disclosed. The powder plasma processing apparatus includes: a chamber configured to perform plasma processing on a powder; a powder supply unit disposed in...
US20150218057 CERAMIC ARTICLE WITH REDUCED SURFACE DEFECT DENSITY  
A machined ceramic article having an initial surface defect density and an initial surface roughness is provided. The machined ceramic article is heated to a temperature range between about 1000°...
US20110186224 METHOD AND DEVICE FOR DESCALING A METAL STRIP  
A method and a device for descaling a metal strip, in which the metal strip is guided in a direction of conveyance through at least one plasma descaling unit in which it is subjected to a plasma...
US20090068844 Etching Process  
Mixtures of fluorine and inert gases like nitrogen and/or argon can be used for etching of semiconductors, solar panels and flat panels (TFTs and LCDs), and for cleaning of semiconductor surfaces...
US20100213175 Diamond etching method and articles produced thereby  
There are provided simplified methods for etching diamond, as compared to conventional methods. More particularly, the methods disclosed herein involve contacting at least a portion of the diamond...
US20060042755 Large surface area dry etcher  
A dry etcher includes a process chamber configured to process a substrate therein using plasma; a substrate supporter to support the substrate; an inner chamber wall maintained at a high...
US20100065213 ETCHING CHAMBER HAVING FLOW EQUALIZER AND LOWER LINER  
A plasma processing chamber having a lowered flow equalizer and a lower chamber liner. In an etching process, the processing gases may be unevenly drawn from the processing chamber which may cause...
US20080223521 Plasma Source Coil and Plasma Chamber Using the Same  
A plasma source coil includes a bushing arranged at a center part, and a plurality of unit coils arranged in the form of a concentric circle from a circumference of the bushing on the bases of the...
US20150171261 TRANSPARENT CONDUCTIVE OXIDE (TCO) LAYER, AND SYSTEMS, APPARATUSES AND METHODS FOR FABRICATING A TRANSPARENT CONDUCTIVE OXIDE (TCO) LAYER  
A transparent conductive oxide (TCO) layer formed using a post-TCO layer deposition process to increase roughness, aspect ratio and/or peak-to-valley heights of the surface topography relative to...
US20150064879 Separation of Chips on a Substrate  
Various methods and apparatuses are provided relating to separation of a substrate into a plurality of parts. For example, first a partial separation is performed and then the partially separated...
US20110024040 DEPOSIT PROTECTION COVER AND PLASMA PROCESSING APPARATUS  
There are provided a deposit protection cover and a plasma processing apparatus capable of providing a simple solution to deposits adhered to a portion originally considered to be unreachable by...
US20070207267 Disposable liners for etch chambers and etch chamber components  
Disposable liners for shielding semiconductor reactor chamber components from erosion in the reactor chamber. More specifically, disposable metal liners and a method of forming such liners wherein...
US20130052830 PLASMA REACTOR HAVING DUAL INDUCTIVELY COUPLED PLASMA SOURCE  
Provided is a plasma reactor having a dual inductively coupled plasma source that includes a plasma reactor body having a substrate processing area and a dielectric window which comes in contact...
US20090023100 Patterning a surface comprising silicon and carbon  
Patterning a surface, comprising at least one feature having silicon coupled to a substrate, is described herein. In one embodiment a method is described for patterning a surface which comprises...
US20150162167 MICROWAVE PLASMA PROCESSING APPARATUS  
In accordance with example embodiments, a plasma processing apparatus includes a chamber configured to peform a plasma process, an upper plate on the chamber, an antenna under the upper plate and...
US20120000610 Microwave Plasma Processing Apparatus  
In accordance with example embodiments, a plasma processing apparatus includes a chamber configured to perform a plasma process, an upper plate on the chamber, an antenna under the upper plate and...
US20090218042 Methods For Producing Quartz Parts With Low Defect And Impurity Densities For Use In Semiconductor Processing  
Described are methods and chemistries for preparing firepolished quartz parts for use in semiconductor processing. The quartz parts in need of preparation include newly manufactured parts as well...
US20060207971 Atmospheric transfer chamber, processed object transfer method, program for performing the transfer method, and storage medium storing the program  
An atmospheric transfer chamber, connected to an object processing chamber for processing a target object by using a plasma of a halogen-based gas, for transferring the target object therein, the...
US20150129133 PLASMA DEVICE  
The plasma device is disclosed, the plasma device including a chamber configured to accommodate a substrate, and a plasma source formed at one side of the chamber to excite a reaction gas of the...
US20120000606 PLASMA UNIFORMITY SYSTEM AND METHOD  
A plasma processing tool comprises a plasma chamber configured to generate a plasma from a gas introduced into the chamber where the generated plasma has an electron plasma frequency. A plurality...
US20150179410 DRY ETCHING DEVICE AND ELECTRODE THEREOF  
The invention discloses a dry etching device and an electrode thereof. The electrode comprises an electrode base, an insulation layer arranged on the electrode base, and an edge stage located on a...