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US20110151226 SYNTHETIC CVD DIAMOND  
The present disclosure relates to methods for synthesizing synthetic CVD diamond material and high quality synthetic CVD diamond materials.
US20130266809 BIOTEMPLATED PEROVSKITE NANOMATERIALS  
A biotemplated nanomaterial can include a crystalline perovskite.
US20150240382 SINGLE CRYSTAL CHEMICAL VAPOUR DEPOSITED SYNTHETIC DIAMOND MATERIALS HAVING UNIFORM COLOUR  
A coloured single crystal CVD synthetic diamond material comprising: a plurality of layers, wherein the plurality of layers includes at least two sets of layers which differ in terms of their...
US20150014586 METHOD OF MAKING QUANTUM DOTS  
Quantum dots and methods of making quantum dots are provided.
US20150013589 METHOD OF MAKING QUANTUM DOTS  
Quantum dots and methods of making quantum dots are provided.
US20080118733 Nitride semiconductor ingot, nitride semiconductor substrate fabricated from the same and method for making nitride semiconductor ingot  
A nitride semiconductor ingot is formed of a nitride semiconductor, and has a length of more than 20 mm and a diameter of not less than 50.8 mm. The nitride semiconductor ingot includes no cracks...
US20130152851 Bulk Growth Grain Controlled Directional Solidification Device and Method  
A solidification system is provided and includes a crucible, heater, insulation, movable insulation, and radiation regulator. The crucible is configured to retain a volume of silicon. The heater...
US20130160704 CRUCIBLE SUPPORT STRUCTURE  
A crystal growth furnace comprising at least three support pedestals supporting a crucible block and at least one means for stabilizing at least two of the support pedestals is disclosed. The...
US20140261155 CRUCIBLE FOR CONTROLLING OXYGEN AND RELATED METHODS  
A system for growing a crystal ingot from a melt includes a first crucible, a second crucible, and a weir. The first crucible has a first base with a top surface and a first sidewall that form a...
US20140261154 CZOCHRALSKI CRUCIBLE FOR CONTROLLING OXYGEN AND RELATED METHODS  
A system for growing an ingot from a melt includes a first crucible, a second crucible, and a weir. The first crucible has a first base and a first sidewall that form an outer cavity for...
US20090050050 DEEP-EUTECTIC MELT GROWTH OF NITRIDE CRYSTALS  
Single-crystal materials are fabricated from a melt at temperatures below their melting points.
US20080292524 Crucible for the Treatment of Molten Silicon  
A crucible for the treatment of molten silicon includes a basic body with a bottom surface and lateral walls defining an inner volume. The basic body comprises at least 65% by weight of silicon...
US20150144056 CRYSTAL GROWING SYSTEMS AND CRUCIBLES FOR ENHANCING HEAT TRANSFER TO A MELT  
A system for growing an ingot from a melt includes an outer crucible, an inner crucible, and a weir. The outer crucible includes a first sidewall and a first base. The first sidewall and the first...
US20130239615 METHOD FOR GROWING WHITE COLOR DIAMONDS BY USING DIBORANE AND NITROGEN IN COMBINATION IN A MICROWAVE PLASMA CHEMICAL VAPOR DEPOSITION SYSTEM  
The present application discloses the details of a microwave plasma chemical vapor deposition process that uses Nitrogen and Diborane simultaneously in combination along with the Methane and...
US20140174591 DOPANT FUNNEL FOR LOADING AND DISPENSING DOPANT  
A dopant funnel for loading dopant pellets into a dispenser tube of a dopant dispenser is disclosed. The dopant funnel has a cup connected through a restrictor to a shaft. The cup holds random...
US20070017437 Grown diamond mosaic separation  
The present invention provides in one example embodiment a synthetic diamond and a method of growing such a diamond on a plurality of seed diamonds, implanting the grown diamond with ions, and...
US20140109825 EQUIPMENT AND METHOD FOR PRODUCING CRYSTAL BY VERTICAL BOAT METHOD  
Equipment for crystal growth by a vertical boat method includes a crucible enclosing a raw material, an ampoule encapsulating the crucible, and a crystal growth heater provided around the ampoule...
US20140020620 DIAMOND  
The present invention relates to an HPHT method for synthesizing single crystal diamond, wherein a single crystal diamond seed having an aspect ratio of at least 1.5 is utilised. Single crystal...
US20130239882 COATED CRUCIBLE AND METHOD OF MAKING A COATED CRUCIBLE  
A crucible for forming a boule in a portion of an interior volume of the crucible. The crucible has a crucible base material forming the interior volume. The crucible base material is separated...
US20150176150 ADVANCED CRUCIBLE SUPPORT AND THERMAL DISTRIBUTION MANAGEMENT  
According to the disclosed embodiments, an advanced crucible support system is described that allows for greater heat flow to and from the bottom of a crucible, preferably while also preventing...
US20130302358 MORPHOLOGICALLY AND SIZE UNIFORM MONODISPERSE PARTICLES AND THEIR SHAPE-DIRECTED SELF-ASSEMBLY  
Monodisperse particles having: a single pure crystalline phase of a rare earth-containing lattice, a uniform three-dimensional size, and a uniform polyhedral morphology are disclosed. Due to their...
US20130133569 Crystal Growth Device  
A crystal growth device includes a crucible and a heater setting. The crucible has a bottom and a top opening. The heater setting surrounds the crucible and is movable relative to the crucible...
US20120273713 METHOD FOR PROPORTIONING NITRATES AND/OR NITRITES IN A NEUTRAL MEDIUM  
A method is provided for preparing solid or thin-film single-crystals of cubic sesquioxides (space group no. 206, Ia-3) of scandium, yttrium or rare earth elements doped with lanthanide ions with...
US20110017126 COLOURED DIAMOND  
A diamond layer of single crystal CVD diamond which is coloured, preferably which has a fancy colour, and which has a thickness of greater than 1 mm.
US20120225004 Halosilane Assisted PVT Growth of SiC  
In a physical vapor transport growth technique for silicon carbide a silicon carbide powder and a silicon carbide seed crystal are introduced into a physical vapor transport growth system and...
US20110253032 APPARATUS FOR MANUFACTURING QUANTUM DOT WITH A PLURALITY OF HEATING ZONES AND METHOD FOR MANUFACTURING QUANTUM DOT  
Disclosed is a technology of producing quantum dots that are nano-size semiconducting crystals. A quantum dot producing apparatus includes a mixer for mixing precursor solutions, and a heating...
US20130319321 METALLIC CRUCIBLES AND METHODS OF FORMING THE SAME  
In various embodiments, a precursor powder is pressed into an intermediate volume and chemically reduced, via sintering, to form a metallic shaped article.
US20080011224 METHOD FOR PRODUCING HEXAGONAL BORON NITRIDE SINGLE CRYSTAL AND HEXAGONAL BORON NITRIDE SINGLE CRYSTAL  
An object of the present invention is to provide a novel method of growing hexagonal boron nitride single crystal. It is found that hexagonal boron nitride single crystal is grown in calcium...
US20120076860 COMPOSITIONS, METHODS, AND SYSTEMS RELATING TO CONTROLLED CRYSTALLIZATION AND/OR NUCLEATION OF MOLECULAR SPECIES  
The present invention generally relates to compositions, methods, and systems relating to controlled crystallization and/or nucleation of a molecular species. In some embodiments, the...
US20120098102 DEFECT REDUCTION OF NON-POLAR AND SEMI-POLAR III-NITRIDES WITH SIDEWALL LATERAL EPITAXIAL OVERGROWTH (SLEO)  
A method of reducing threading dislocation densities in non-polar such as a-{11-20} plane and m-{1-100} plane or semi-polar such as {10-1n} plane III-Nitrides by employing lateral epitaxial...
US20130333613 METHOD FOR SURFACTANT CRYSTAL GROWTH OF A METAL-NONMETAL COMPOUND  
Method for crystal growth from a surfactant of a metal-nonmetal (MN) compound, including the procedures of providing a seed crystal, introducing atoms of a first metal to the seed crystal thus...
US20130305983 Physical Vapor Transport Growth System For Simultaneously Growing More Than One SIC Single Crystal and Method of Growing  
The present invention relates to a configuration and in particular a physical vapor transport growth system for simultaneously growing more than one silicon carbide (SiC) bulk crystal....
US20110009637 Crystals of Dexlansoprazole  
The present invention relates to crystals of the Active Pharmaceutical Ingredient (API) Dexlansoprazole, including methods of making the crystals, pharmaceutical compositions comprising the...
US20100329965 DIAMOND MATERIAL  
A method of making fancy pale blue or fancy pale blue/green CVD diamond material is described. The method comprises irradiating single crystal diamond material that has been grown by a CVD process...
US20140020618 METHOD FOR PRODUCING CALCITE SINGLE CRYSTAL  
The objective of the present invention is to provide a method for producing a calcite single crystal which is appropriately fine in a large scale with no difficulty. The method for producing a...
US20090249999 REUSABLE CRUCIBLES AND METHOD OF MANUFACTURING THEM  
This invention relates to reusable crucibles for production of ingots of semiconductor grade silicon made of nitride bonded silicon nitride (NBSN). The crucibles may be made by mixing silicon...
US20120051996 DIAMOND MATERIAL  
Single crystal diamond having a high chemical purity i.e. a low nitrogen content and a high isotopic purity i.e. a low 13C content, methods for producing the same and a solid state system...
US20120264615 CHEMICAL SOLUTION SEED LAYER FOR RABITS TAPES  
A method for making a superconducting article includes the steps of providing a biaxially textured substrate. A seed layer is then deposited. The seed layer includes a double perovskite of the...
US20120172232 Nanorod-containing precursor powder, nanorod-containing superconductor bulk and method for manufacturing the same  
The present invention relates to a nanorod-containing precursor powder, a nanorod-containing superconductor bulk and a method for manufacturing the same. The method for manufacturing a...
US20150083037 Isoelectronic Surfactant Induced Sublattice Disordering In Optoelectronic Devices  
A method of disordering a layer of an optoelectronic device including; growing a plurality of lower layers; introducing an isoelectronic surfactant; growing a layer; allowing the surfactant to...
US20140090592 CONTINUOUS SAPPHIRE GROWTH  
Systems and methods for continuous sapphire growth are disclosed. One embodiment may take the form of a method including feeding a base material into a crucible located within a growth chamber,...
US20130269600 METHOD FOR GROWING MAGNESIUM-ZINC-OXIDE-BASED CRYSTAL  
The method includes a step of growing an MgZnO-based single-crystal layer at a growth pressure of less than 10 kPa and a growth temperature equal to or greater than an upper limit temperature for...
US20140182511 PROTECTIVE COATING TO PREVENT REACTION BETWEEN GRAPHITE SUSCEPTOR AND QUARTZ CRUCIBLE  
A susceptor for supporting a crucible includes a body with an interior surface defining a cavity. A coating is disposed on the interior surface to provide a barrier for preventing contact between...
US20120204783 CONTAINER FOR CRYSTALLIZATION, CRYSTALLIZATION APPARATUS, METHOD FOR PRODUCING CRYSTAL, AND SUBSTRATE FOR CRYSTALLIZATION  
A container for crystallization of a biopolymer of the invention is provided that includes a structure wherein two or more noble metals and/or noble metal-coated bodies are arranged at an interval...
US20130344333 METHODS FOR PREPARING TRIMANGANESE TETROXIDE WITH LOW BET SPECIFIC SURFACE AREA, METHODS FOR CONTROLLING PARTICLE SIZE OF TRIMANGANESE TETROXIDE AND TRIMANGANESE TETROXIDE PRODUCT  
The present invention provides methods for preparing trimanganese tetroxide with low BET specific surface area and methods for controlling particle size of trimanganese tetroxide and trimanganese...
US20140220340 Branched Nanowires and Method of Fabrication  
A new set of branched nanowire or nanotree structures and their fabrication process. Some structures have one or more of the following distinctions from other branched nanowires: (1) the trunk and...
US20140377126 RUTHENIUM NANOPARTICLES WITH ESSENTIALLY FACE-CENTERED CUBIC STRUCTURE AND METHOD FOR PRODUCING THE SAME  
Disclosed are ruthenium nanoparticles having an essentially face-centered cubic structure. Disclosed is a method for producing ruthenium nanoparticles having an essentially face-centered cubic...
US20140050652 GRAPHENE AND ITS GROWTH  
The present invention provides graphene nuclei including monolayer single-crystalline graphene nuclei and a method of growing from them two-dimensional graphene dendrites, with aspect ratio of the...
US20120118225 EPITAXIAL GROWTH TEMPERATURE CONTROL IN LED MANUFACTURE  
Apparatus and method for control of epitaxial growth temperatures during manufacture of light emitting diodes (LEDs). Embodiments include measurement of a substrate and/or carrier temperature...
US20110014112 METHOD FOR GROWING MONOCRYSTALLINE DIAMONDS  
A method of forming mono-crystalline diamond by chemical vapour deposition, the method comprising the steps of: (a) providing at least one diamond seed; (b) exposing the seed to conditions for...