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US20150240382 SINGLE CRYSTAL CHEMICAL VAPOUR DEPOSITED SYNTHETIC DIAMOND MATERIALS HAVING UNIFORM COLOUR  
A coloured single crystal CVD synthetic diamond material comprising: a plurality of layers, wherein the plurality of layers includes at least two sets of layers which differ in terms of their...
US20080011224 METHOD FOR PRODUCING HEXAGONAL BORON NITRIDE SINGLE CRYSTAL AND HEXAGONAL BORON NITRIDE SINGLE CRYSTAL  
An object of the present invention is to provide a novel method of growing hexagonal boron nitride single crystal. It is found that hexagonal boron nitride single crystal is grown in calcium...
US20130269600 METHOD FOR GROWING MAGNESIUM-ZINC-OXIDE-BASED CRYSTAL  
The method includes a step of growing an MgZnO-based single-crystal layer at a growth pressure of less than 10 kPa and a growth temperature equal to or greater than an upper limit temperature for...
US20100301306 STRAIN-CONTROLLED ATOMIC LAYER EPITAXY, QUANTUM WELLS AND SUPERLATTICES PREPARED THEREBY AND USES THEREOF  
Processes for forming quantum well structures which are characterized by controllable nitride content are provided, as well as superlattice structures, optical devices and optical communication...
US20120103249 SIC SINGLE CRYSTAL SUBLIMATION GROWTH METHOD AND APPARATUS  
A physical vapor transport growth system includes a growth chamber charged with SiC source material and a SiC seed crystal in spaced relation and an envelope that is at least partially...
US20050000411 Assembly for crucible used for evaporation of raw materials  
An assembly for vaporizing raw materials in order to prepare vapor deposited phosphor materials comprises a crucible provided with two plates or covers, wherein one thereof is an outermost plate...
US20140090688 Nitride-Based Multi-Junction Solar Cell Modules and Methods for Making the Same  
A backside illuminated multi-junction solar cell module includes a substrate, multiple multi-junction solar cells, and a cell interconnection that provides a series connection, between at least...
US20150240381 BORON DOPED SINGLE CRYSTAL DIAMOND ELECTROCHEMICAL SYNTHESIS ELECTRODE  
Synthetic monocrystalline diamond compositions having one or more monocrystalline diamond layers formed by chemical vapor deposition, the layers including one or more layers having an increased...
US20150259828 EPITAXIAL WAFER AND METHOD FOR FABRICATING THE SAME  
Provided are an epitaxial wafer and a method of fabricating the same. The method includes a pre-growth step of injecting a reaction source for epitaxial growth on a semiconductor wafer prepared in...
US20140174342 METHODS FOR INCREASING GROWTH RATE OF THIN FILMS  
The present invention generally related to adding Indium precursors to deposition processes for thin films. Indium precursors are added in order to increase the growth rate per cycle of the...
US20060032433 Rapid X-ray diffraction method for structural analysis of a nano material on a surface or at an interface and for structural analysis of a solid/liquid interface, and apparatus used for the method  
To characterize or evaluate ultra-fine structures such as ultra-fine nanowires grown on a substrate's crystal surface, buried ultra-fine nanolines or nanowires as sandwiched between a substrate's...
US20060288929 Polar surface preparation of nitride substrates  
Fabrication of AlN substrates suitable for epitaxial deposition of high-quality nitride-based compounds thereon having at least one single-crystal and substantially planarized useful area...
US20070079751 Inp single crystal, gaas single crystal, and method for production thereof  
A method for the production of an InP single crystal includes gradually cooling a molten raw material held in contact with a seed crystal to solidify the molten raw material from a lower part...
US20100116197 OPTICAL QUALITY DIAMOND MATERIAL  
A CVD single crystal diamond material suitable for use in, or as, an optical device or element. It is suitable for use in a wide range of optical applications such as, for example, optical...
US20100006023 Method For Preparing Films And Devices Under High Nitrogen Chemical Potential  
Nitride semiconductor films, such as for use in solid state light emitting devices and electronic devices, are fabricated in an environment of relatively high nitrogen potential such that nitrogen...
US20100126411 METHODS FOR PRODUCING GaN NUTRIENT FOR AMMONOTHERMAL GROWTH  
The present invention discloses methods to produce large quantities of polycrystalline GaN for use in the ammonothermal growth of group III-nitride material. High production rates of GaN can be...
US20070068450 Novel nitrogen semiconductor compound and device fabricated using the same  
Disclosed herein are a novel nitrogen semiconductor compound simultaneously including groups with different electrical properties and a device fabricated using the nitrogen semiconductor compound...
US20060174824 Avalanche multiplication photosensor employing extremely thin molecular crystal and process for fabricating the same  
An extremely thin single-crystal is sandwiched between two electrodes. In a preferred embodiment, the extremely thin single-crystal is prepared by slicing a needle molecular crystal of Me-PTC...
US20050076828 Process for fabrication of III nitride-based compound semiconductors  
A process for the fabrication of a III nitride-based compound semiconductor includes a first crystal growth step for growing a semiconductor layer A made of a III nitride-based compound...
US20140318592 ENHANCEMENT OF THERMOELECTRIC PROPERTIES THROUGH POLARIZATION ENGINEERING  
A method for enhancement of thermoelectric properties through polarization engineering. Internal electric fields created within a material are used to spatially confine electrons for the purpose...
US20080006201 Method of growing gallium nitride crystal  
The facet growth method grows GaN crystals by preparing an undersubstrate, forming a dotmask or a stripemask on the undersubstrate, growing GaN in vapor phase, causing GaN growth on exposed parts,...
US20130233240 METHODS AND APPARATUSES FOR EPITAXIAL FILMS WITH HIGH GERMANIUM CONTENT  
The present application relates to methods for depositing a smooth, germanium rich epitaxial film by introducing silylgermane as a source gas into a reactor at low temperatures. The epitaxial film...
US20060075959 Trimethylgallium, a method for producing the same and a gallium nitride thin film grown from the trimethylgallium  
The present invention provides a trimethylgallium which has less than 0.1 ppm of a total organic silicon compound content; and a method for producing the trimethylgallium comprises hydrolyzing...
US20130029158 PROCESS FOR PRODUCING EPITAXIAL SILICON CARBIDE SINGLE CRYSTAL SUBSTRATE AND EPITAXIAL SILICON CARBIDE SINGLE CRYSTAL SUBSTRATE OBTAINED BY THE SAME  
Disclosed is a process for producing an epitaxial single-crystal silicon carbide substrate by epitaxially growing a silicon carbide film on a single-crystal silicon carbide substrate by chemical...
US20060021565 GaInP / GaAs / Si triple junction solar cell enabled by wafer bonding and layer transfer  
A multi-junction solar cell includes a silicon solar subcell, a GaInP solar subcell, and a GaAs solar subcell located between the silicon solar subcell and the GaInP solar subcell. The GaAs solar...
US20070062439 Temperature Control Method of Epitaxial Growth Apparatus  
An object of the invention is to calibrate an upper pyrometer for indirectly measuring a substrate temperature at the time of epitaxial growth in a comparatively short time and with accuracy to...
US20070266934 Method of forming a silicon dioxide film  
There is provided a method of forming a silicon dioxide film, which comprises repeating a step of depositing a silicon layer on a silicon substrate to form a silicon dioxide film of a...
US20050132952 Semiconductor alloy with low surface roughness, and method of making the same  
A compositionally-graded, strain relaxed Si1-xGex (0
US20090114148 METHOD OF PRODUCING EPITAXIAL LAYERS WITH LOW BASAL PLANE DISLOCATION CONCENTRATIONS  
A method of: flowing a silicon source gas, a carbon source gas, and a carrier gas into a growth chamber under growth conditions to epitaxial grow silicon carbide on a wafer in the growth chamber;...
US20050045091 Molecular beam epitaxy growth apparatus and method of controlling same  
In system(s) utilizing multiple molecular beams of Group V material(s) (and/or Group VI material(s)), rotary beam chopper(s)) 8 and so forth are installed in front of respective discharge port(s)...
US20150090180 Epitaxial growth of compound semiconductors using lattice-tuned domain-matching epitaxy  
A method of epitaxially growing a final film using a crystalline substrate wherein the final film cannot be grown directly on the substrate surface is disclosed. The method includes forming a...
US20130049014 EPITAXIAL SILICON CARBIDE SINGLE CRYSTAL SUBSTRATE AND PROCESS FOR PRODUCING THE SAME  
Provided is an epitaxial silicon carbide single-crystal substrate in which a silicon carbide epitaxial film having excellent in-plane uniformity of doping density is disposed on a silicon carbide...
US20060196411 VAPOR PHASE EPITAXY APPARATUS AND IRREGULAR GAS MIXTURE AVOIDANCE METHOD FOR USE THEREWITH  
A vapor phase epitaxy apparatus having a processing chamber with a target workpiece such as a wafer being received therein is disclosed. This apparatus includes a first flow path which supplies...
US20060236921 Method of cleaning a substrate surface from a crystal nucleus  
A method of cleaning a substrate surface from a crystal nucleus in which the substrate surface is held in a condition under which a crystal growth is accelerated with respect to normal clean room...
US20050092233 Single and multi-layer crystalline structures  
An opto-fluidic device includes a logic and heater layer placed on a top of a substrate layer. The logic and heater layer includes both a logic circuitry region and a heater region. The heater...
US20140027777 GROWING OF GALLIUM-NITRADE LAYER ON SILICON SUBSTRATE  
Embodiments relate to growing an epitaxy gallium-nitride (GaN) layer on a porous silicon (Si) substrate. The porous Si substrate has a larger surface area compared to non-porous Si substrate to...
US20070056506 PROCESS FOR MANUFACTURE OF SUPER LATTICE USING ALTERNATING HIGH AND LOW TEMPERATURE LAYERS TO BLOCK PARASITIC CURRENT PATH  
A method for fabricating a III-nitride semiconductor body that includes high temperature and low temperature growth steps.
US20150233017 VAPOR PHASE GROWTH METHOD  
A vapor phase growth method according to embodiments uses a vapor phase growth apparatus including a reaction chamber, a transfer chamber, and a standby chamber. After a film containing gallium...
US20120037067 CUBIC SILICON CARBIDE FILM MANUFACTURING METHOD, AND CUBIC SILICON CARBIDE FILM-ATTACHED SUBSTRATE MANUFACTURING METHOD  
A method for manufacturing a cubic silicon carbide film includes: a first step of introducing a carbon-containing gas onto a silicon substrate and rapidly heating the silicon substrate to an...
US20080149020 Device and method to producing single crystals by vapour deposition  
A method and a device to grow from the vapor phase, a single crystal of either SiC, a group III-nitride, or alloys thereof, at a growth rate and for a period of time sufficient to produce a...
US20130040103 METHOD OF MANUFACTURING SINGLE CRYSTAL 3C-SIC SUBSTRATE AND SINGLE CRYSTAL 3C-SIC SUBSTRATE OBTAINED FROM THE MANUFACTURING METHOD  
To provide a method of manufacturing a single crystal 3C-SiC substrate that can dramatically reduce surface defects generated in a processing of epitaxial growth and can secure a quality as a...
US20070074652 Method for epitaxy with low thermal budget and use thereof  
A method for low-temperature epitaxy at the surface of at least one plate made of a pure silicon- or silicon alloy (SiGe, SiC, SiGeC . . . )-based material, in a chemical vapor deposition (CVD)...
US20060272574 Methods for manufacturing integrated circuits  
Methods for manufacturing an integrated circuit are provided. An exemplary method comprises the step of providing a silicon substrate having a first crystalline orientation. A silicon layer having...
US20060225642 Method of forming semiconductor crystal  
A method of forming semiconductor crystal of the present invention comprises the steps of heating a Si substrate to clean a surface of the Si substrate, epitaxially growing Si crystal on the Si...
US20050241571 Method of growing nitride single crystal on silicon substrate, nitride semiconductor light emitting device using the same, method of manufacturing the same  
A method of growing a nitride single crystal layer, and a method of manufacturing a light emitting device using the method are disclosed. The method of growing a nitride single crystal layer...
US20070175384 METHOD OF FABRICATING A QUASI-SUBSTARTE WAFER AND SEMICONDUCTOR BODY FABRICATED USING SUCH A QUASI-SUBSTARTE WAFER  
Disclosed are a method of fabricating a quasi-substrate wafer (17) with a subcarrier wafer (4) and a growth layer (120), and a semiconductor body fabricated using such a quasi-substrate wafer...
US20050217566 Method for producing one or more monocrystalline layers, each with a different lattice structure, on one plane of a series of layers  
The invention relates to a method for producing one or more monocrystalline layers, each with a different lattice structure, on one plane, for an electronic component, in order to produce a system...
US20100093124 METHOD OF PRODUCING A GROUP III NITRIDE CRYSTAL  
There is provided a method capable of obtaining an aluminum-based group III nitride crystal layer having a smooth surface and high crystallinity by employing only HVPE in which inexpensive raw...
US20070187668 Crystal substrates and methods of fabricating the same  
A single crystal substrate and method of fabricating the same are provided. The single crystal substrate includes an insulator having a window exposing a portion of a substrate, a selective...
US20050178318 Method of growing crystal of compound semiconductor and method of manufacturing compound semiconductor device  
A method of growing crystals of compound semiconductor having good quality is provided. The method of growing crystals of compound semiconductor according to the present invention is related to a...

Matches 1 - 50 out of 83 1 2 >