Mcdaniel, Terrence (Boise, ID)
Hineman, Max F. (Boise, ID)

09/366508

02/26/2002

08/03/1999

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Micron Technology, Inc. (Boise, ID)

438/634

438/647, 438/645, 257/E21.579, 438/648, 438/618, 257/E21.576, 438/622, 257/E21.589, 438/623, 438/631

H01L21/768; H01L21/70; H01L21/4763

438/648, 438/618, 438/634, 438/631, 438/623, 438/645, 438/622, 438/647

4180416	Thermal migration-porous silicon technique for forming deep dielectric isolation		Brock	148/1.5
4561173	Method of manufacturing a wiring system		Te Velde	29/577C
5023200	Formation of multiple levels of porous silicon for buried insulators and conductors in silicon device technologies		Blewer et al.	437/187
5103288	Semiconductor device having multilayered wiring structure with a small parasitic capacitance		Sakamoto et al.	357/71
5141896	Process for the production of crossing points for interconnections of semiconductor devices		Katoh	437/195
5149615	Method for producing a planar surface on which a conductive layer can be applied		Chakravorty et al.	430/313
5171713	Process for forming planarized, air-bridge interconnects on a semiconductor substrate		Matthews	437/189
5192834	Insulated electric wire		Yamanishi et al.
5266519	Method for forming a metal conductor in semiconductor device		Iwamoto	438/193
5286668	Process of fabricating a high capacitance storage node		Chou	437/52
5461003	Multilevel interconnect structure with air gaps formed between metal leads		Havemann et al.	437/187
5464786	Method for forming a capacitor having recessed lateral reaction barrier layer edges		Figura et al.	438/52
5470801	Low dielectric constant insulation layer for integrated circuit structure and method of making same		Kapoor et al.	437/238
5488015	Method of making an interconnect structure with an integrated low density dielectric		Havermann et al.	437/195
5496773	Semiconductor processing method of providing an electrically conductive interconnecting plug between an elevationally inner electrically conductive node and an elevationally outer electrically conductive node		Rhodes et al.	437/189
5525857	Low density, high porosity material as gate dielectric for field emission device		Gnade et al.	313/309
5527737	Selective formation of low-density, low-dielectric-constant insulators in narrow gaps for line-to-line capacitance reduction		Jeng	437/195
5554567	Method for improving adhesion to a spin-on-glass		Wang	437/195
5559666	Capacitor construction with oxidation barrier blocks		Figura et al.	361/321.4
5583078	Method for fabricating a planar dielectric		Osenbach	437/240
5599745	Method to provide a void between adjacent conducting lines in a semiconductor device		Reinberg	437/195
5629238	Method for forming conductive line of semiconductor device		Choi et al.	438/645
5654224	Capacitor construction with oxidation barrier blocks		Figura et al.	439/306
5670828	Tunneling technology for reducing intra-conductive layer capacitance		Cheung et al.	257/773
5691565	Integrated circuitry having a pair of adjacent conductive lines		Manning	257/632
5691573	Composite insulation with a dielectric constant of less than 3 in a narrow space separating conductive lines		Avanzino et al.	257/758
5736425	Glycol-based method for forming a thin-film nanoporous dielectric		Smith et al.	438/778
5744399	Process for forming low dielectric constant layers using fullerenes		Rostoker et al.	438/622
5773363	Semiconductor processing method of making electrical contact to a node		Derderian et al.	438/672
5804508	Method of making a low dielectric constant material for electronics		Gnade et al.	438/778
5807607	Polyol-based method for forming thin film aerogels on semiconductor substrates		Smith et al.	427/96
5808854	Capacitor construction with oxidation barrier blocks		Figura et al.	361/321.4
5861345	In-situ pre-PECVD oxide deposition process for treating SOG		Chou et al.	438/763
5882978	Methods of forming a silicon nitride film, a capacitor dielectric layer and a capacitor		Srinivasan et al.	438/396
5883014	Method for treating via sidewalls with hydrogen plasma		Chen et al.	438/782
5950102	Method for fabricating air-insulated multilevel metal interconnections for integrated circuits		Lee	438/619
5970360	DRAM cell with a roughened poly-Si electrode		Cheng et al.	438/398
6001747	Process to improve adhesion of cap layers in integrated circuits		Annapragada	438/790
6028015	Process for treating damaged surfaces of low dielectric constant organo silicon oxide insulation material to inhibit moisture absorption		Wang et al.	438/789
6156374	Method of forming insulating material between components of an integrated circuit		Forbes et al.	428/97
6251470	Methods of forming insulating materials, and methods of forming insulating materials around a conductive component		Forbes et al.	427/97

EP0542262				Method for forming a metal conductor in semiconductor device.
EP0923125				Method of making metallic interconnections in integrated circuits
FR0923125

Gayet et al., Translation of EP 0923125 A1, “Process For Making Metal Interconnections In Integrated Circuits”, Jun. 1999.*
U.S. application No. 08/947,360, Werner et al., filed Oct. 9, 1997.
Yoon et al, Monolithic Integration of 3-D Electroplated Microstructures with Unlimited Number of Levels . . . IEEE International Micro-Electro Mechanical Systems Conference (1999) pp. 624-629.
Wolf et al., “Silicon Processing for the VLSI Era”, 1 Process Technology 429-437 (1986).
Watanabe et al., A Novel Stacked Capacitor With Porous-Si Electrodes for High Density DRAMS, Microelectronics Research Laboratories, NEC Corporation, Japan, &num 3A-1, pp. 17-18 (pre-1998).
“Monolithic Integration of 3-D Electroplated Microstuctures with Unlimited Number of Levels Using Planariaztion with a Sacrificial Metallic Mold”, Yoon et al.; IEEE International Micro-Electro Mechanical Systems Conference; 1999; pp. 624-629.
“Silicon Processing for the VLSI Era”; vol. 1: Process Technology; 1986; pp. 429-437.
Togo, M., et al., “A Gate-Side Air-Gap Structure (GAS) To Reduce the Parasitic Capacitance in MOSFET's”, I.E.E.E., pp. 38-39 (1996). ;, pp. 38-39 (1996).
Anand, M.B., et al., “Nura: A Feasible, Gas-Dielectric Interconnect Process”, I.E.E.E., pp. 82-83 (1996). ;, pp. 82-83 (1996).
Abstract: Anderson, R.C., et al., “Porous Polycrystalline Silicon: A New Material For MEMS”, Journal of Microelectromechanical Systems. vol. 3, No. 1, pp. 10-18 (Mar. 1994). ;. vol. 3, No. 1, pp. 10-18 (Mar. 1994).
Homma, Tetsuya, “Low Dielectric Constant Materials And Methods For Interlayer Dielectric Films In Ultralarge-Scale Integrated Circuit Multilevel Interconnection”, Materials Science & Engr., R23, pp. 243-285 (1998). ;, R23, pp. 243-285 (1998).
Abstract: Townsend, P.H., et al., “SiLK Polymer Coating With Low Dielectric Constant and High Thermal Stability for ULSI Interlayer Dielectric”, The Dow Chemical Company, Midland, MI, 9 pages, (Undated). ;, Midland, MI, 9 pages, (Undated).
Singer, Peter, “The New Low-k Candidate: It's a Gas”, (Technology News/Wafer Processing) Semiconductor International, 1 Page, (Mar. 1989. ;, 1 Page, (Mar. 1989.
Product Brochure and Material Safety Data Sheet, “Interlayer Dielectric”, JSR Microelectronics, 12 Pages (1997). ;, 12 Pages (1997).
Stanley Wolf, Ph.D., “Silicon Processing for the VLSI Era”, vol. 1, Process Technology, Copyright 1986, Lattice Press.

Booth, Richard

Kennedy, Jennifer M.

Wells, St. John, Roberts, Gregory & Matkin

What is claimed is:

1. A method of providing an interlevel dielectric layer intermediate different elevation conductive metal layers in the fabrication of integrated circuitry, the method comprising; forming a conductive metal interconnect layer over a substrate; providing an insulating dielectric mass about the conductive metal interconnect layer, the insulating dielectric mass having a first dielectric constant; etching at least a majority of the insulating dielectric mass away from the substrate; after the etching, depositing an interlevel dielectric layer to replace at least some of the etched insulating dielectric material, the interlevel dielectric layer having a second dielectric constant which is less than the first dielectric constant; and forming the conductive metal interconnect layer into a conductive line prior to providing the insulating dielectric mass, the line forming comprising subtractive etching of the metal interconnect layer.

2. The method of claim 1 wherein the first dielectric constant is at least 3.9, and the second dielectric constant is less than 3.9.

3. The method of claim 1 wherein the depositing replaces all of the insulating mass which was etched from the substrate during the etching.

4. The method of claim 1 wherein the etching comprises isotropic etching.

5. The method of claim 1 wherein the etching comprises anisotropic etching.

6. The method of claim 1 wherein the insulating dielectric mass is formed over another conductive metal interconnect layer, the etching comprising etching all the insulating dielectric mass from the substrate.

7. The method of claim 1 wherein the etching is conducted substantially selective relative to the conductive metal interconnect layer.

8. The method of claim 1 wherein the etching is conducted after substantially all of the integrated circuitry to be fabricated has been fabricated on the substrate.

9. The method of claim 1 being void of any photolithographic processing of the substrate after the etching.

10. A method of providing an interlevel dielectric layer intermediate different elevation conductive layers in the fabrication of integrated circuitry, the method comprising: forming a first insulating dielectric mass over at least partially fabricated circuit devices over a substrate; forming a first conductive interconnect layer supported by the first insulating dielectric mass; forming a second insulating dielectric mass over the first conductive interconnect layer and over and in contact with the first insulating dielectric mass, the second insulating dielectric mass having a first dielectric constant; forming a second conductive interconnect layer supported by the second insulating dielectric mass, and providing the second conductive interconnect layer into the shape of at least one conductive line; etching at least a portion of the second insulating dielectric mass away from the substrate, the etching leaving some of the second insulating dielectric mass beneath the conductive line; and after the etching, depositing an interlevel dielectric layer to replace at least some of the etched second insulating dielectric material, the interlevel dielectric layer having a second dielectric constant which is less than the first dielectric constant.

11. The method of claim 10 wherein the portion etched is a majority of the second insulating dielectric mass.

12. The method of claim 10 comprising providing the first conductive interconnect layer in the shape of at least one conductive interconnect line, wherein the first conductive interconnect line has an inner base, sidewalls and an outer top, the second insulating dielectric mass being formed over the top and the sidewalls, the etching comprising etching the second insulating dielectric mass inwardly to proximate the base.

13. The method of claim 10 wherein the etching comprises isotropic etching.

14. The method of claim 10 wherein the etching comprises anisotropic etching.

15. The method of claim 10 wherein the etching exposes the first conductive interconnect layer.

16. The method of claim 10 wherein the first and second conductive interconnect layers are metallic.

17. The method of claim 10 wherein the etching is conducted after substantially all of the integrated circuitry to be fabricated has been fabricated on the substrate.

18. The method of claim 10 being void of any photolithographic processing of the substrate after the etching.

19. The method of claim 10 wherein the conductive line has opposing lateral sidewalls, the etching being substantially anisotropic effective to form the second insulating mass remaining beneath the conductive line to have opposing outer lateral sidewalls in at least one cross section which are in lateral alignment with the opposing lateral sidewalls of the conductive line.

20. A method of providing an interlevel dielectric layer intermediate different elevation conductive layers in the fabrication of integrated circuitry, the method comprising: forming a first insulating dielectric mass over at least partially fabricated circuit devices over a substrate; forming a first conductive interconnect line supported by the first insulating dielectric mass; forming a second insulating dielectric mass over the first conductive interconnect line and over and in contact with the first insulating dielectric mass, the second insulating dielectric mass having a first dielectric constant; forming a second conductive interconnect line supported by the second insulating dielectric mass; etching a majority of the second insulating dielectric mass away from the substrate substantially selectively relative to the first and second conductive interconnect lines and substantially selectively relative to the first insulative dielectric mass, the etching exposing the first conductive interconnect line and the first insulating dielectric mass, the etching leaving some of the second insulating dielectric mass beneath the second conductive interconnect line; and after the etching, depositing an interlevel dielectric layer to replace at least some of the etched second insulating dielectric material, the interlevel dielectric layer having a second dielectric constant which is less than the first dielectric constant.

21. The method of claim 20 wherein the etching comprises isotropic etching.

22. The method of claim 20 wherein the etching comprises anisotropic etching.

23. The method of claim 20 wherein the etching is conducted after substantially all of the integrated circuitry to be fabricated has been fabricated on the substrate.

24. The method of claim 20 being void of any photolithographic processing of the substrate after the etching.

25. The method of claim 20 wherein the second conductive interconnect line has opposing lateral sidewalls, the etching being substantially anisotropic effective to form the second insulating mass remaining beneath the second conductive interconnect line to have opposing outer lateral sidewalls in at least one cross section which are in lateral alignment with the opposing lateral sidewalls of the conductive line.

26. A method of providing an interlevel dielectric layer intermediate different elevation conductive layers in the fabrication of integrated circuitry, the method comprising: forming a first insulating dielectric mass over at least partially fabricated circuit devices over a substrate; forming a first conductive interconnect layer supported by the first insulating dielectric mass; forming a second insulating dielectric mass over the first conductive interconnect layer and over the first insulating dielectric mass, the second insulating dielectric mass having a first dielectric constant; forming a second conductive interconnect layer supported by the second insulating dielectric mass, and providing the second conductive interconnect layer into the shape of at least one conductive line; etching at least a portion of the second insulating dielectric mass away from the substrate, the etching leaving some of the second insulating dielectric mass beneath the conductive line; after the etching, depositing an interlevel dielectric layer to replace at least some of the etched second insulating dielectric material, the interlevel dielectric layer having a second dielectric constant which is less than the first dielectric constant; and wherein the conductive line has opposing lateral sidewalls, the etching being substantially anisotropic effective to form the second insulating mass remaining beneath the conductive line to have opposing outer lateral sidewalls in at least one cross section which are in lateral alignment with the opposing lateral sidewalls of the conductive line.

27. A method of providing an interlevel dielectric layer intermediate different elevation conductive layers in the fabrication of integrated circuitry, the method comprising: forming a first insulating dielectric mass over at least partially fabricated circuit devices over a substrate; forming a first conductive interconnect line supported by the first insulating dielectric mass; forming a second insulating dielectric mass over the first conductive interconnect line and over the first insulating dielectric mass, the second insulating dielectric mass having a first dielectric constant; forming a second conductive interconnect line supported by the second insulating dielectric mass; etching a majority of the second insulating dielectric mass away from the substrate substantially selectively relative to the first and second conductive interconnect lines and substantially selectively relative to the first insulative dielectric mass, the etching exposing the first conductive interconnect line and the first insulating dielectric mass, the etching leaving some of the second insulating dielectric mass beneath the second conductive interconnect line; after the etching, depositing an interlevel dielectric layer to replace at least some of the etched second insulating dielectric material, the interlevel dielectric layer having a second dielectric constant which is less than the first dielectric constant; and wherein the second conductive interconnect line has opposing lateral sidewalls, the etching being substantially anisotropic effective to form the second insulating mass remaining beneath the second conductive interconnect line to have opposing outer lateral sidewalls in at least one cross section which are in lateral alignment with the opposing lateral sidewalls of the conductive line.

TECHNICAL FIELD

This invention relates to methods of providing an interlevel dielectric layer intermediate different elevation conductive metal layers in the fabrication of integrated circuitry.

BACKGROUND OF THE INVENTION

In methods of forming integrated circuits, it is frequently desired to electrically isolate components of the integrated circuits from one another with an insulative material. For example, conductive layers can be electrically isolated from one another by separating them with an insulating material. Insulating material received between two different elevation conductive or component layers is typically referred to as an interlevel dielectric material. Also, devices which extend into a semiconductive substrate can be electrically isolated from one another by insulative materials formed within the substrate between the components, such as for example, trench isolation regions.

One typical insulative material for isolating components of integrated circuits is silicon dioxide, which has a dielectric constant of about 4. Yet in many applications, it is desired to utilize insulative materials having dielectric constants lower than that of silicon dioxide to reduce parasitic capacitance from occurring between conductive components separated by the insulative material. Parasitic capacitance reduction continues to have increasing importance in the semiconductor fabrication industry as device dimensions and component spacing continues to shrink. Closer spacing adversely effects parasitic capacitance.

One way of reducing the dielectric constant of certain inherently insulative materials is to provide some degree of carbon content therein. One example technique for doing so has recently been developed by Trikon Technology of Bristol, UK which they refer to as Flowfill™ Technology. Where more carbon incorporation is desired, methylsilane in a gaseous form and H ₂ O ₂ in a liquid form are separately introduced into a chamber, such as a parallel plate reaction chamber. A reaction between the methylsilane and H ₂ O ₂ can be moderated by introduction of nitrogen into the reaction chamber. A wafer is provided within the chamber and ideally maintained at a suitable low temperature, such as 0° C., at a exemplary pressure of 1 Torr to achieve formation of a methylsilanol structure. Such structure/material condenses on the wafer surface. Although the reaction occurs in the gas phase, the deposited material is in the form of a viscus liquid which flows to fill small gaps on the wafer surface. In applications where deposition thickness increases, surface tension drives the deposited layer flat, thus forming a planarized layer over the substrate.

The liquid methylsilanol is converted to a silicon dioxide structure by a two-step process occurring in two separate chambers from that in which the silanol-type structure was deposited. First, planarization of the liquid film is promoted by increasing the temperature to above 100° C., while maintaining the pressure at about 1 Torr, to result in solidification and formation of a polymer layer. Thereafter, the temperature is raised to approximately 450° C., while maintaining a pressure of about 1 Torr, to form (CH ₃ ) _y SiO _(2−y) . y/2 is the percentage of CH ₃ incorporated. The (CH ₃ ) _y SiO _(2−y) has a dielectric constant of less than or equal to about 3, and is accordingly less likely to be involved in parasitic capacitance than silicon dioxide and/or phosphorous doped silicon dioxide.

Other example low k dielectric layer materials include fluorine doped silicon dioxide, high carbon and hydrogen containing materials, and other organic films having less than 20% silicon.

A prior art problem associated with low k dielectric material usage is that many of these materials cannot withstand high temperature processing. Specifically, many melt or gassify at comparatively low temperatures at which the substrate is subjected after deposition of the low k materials. This can essentially destroy the circuitry being fabricated. It is further very difficult to quickly strip photoresist when processing over such low k dielectric layers, as the typical photoresist stripping processes undesirably cause some isotropic etching of the low k dielectric layers.

SUMMARY

The invention comprises methods of providing an interlevel dielectric layer intermediate different elevation conductive metal layers in the fabrication of integrated circuitry. In one implementation, a method of providing an interlevel dielectric layer intermediate different elevation conductive metal layers in the fabrication of integrated circuitry includes forming a conductive metal interconnect layer over a substrate. An insulating dielectric mass is provided about the conductive metal interconnect layer. The insulating dielectric mass s has a first dielectric constant. At least a majority of the insulating dielectric mass is etched away from the substrate. After the etching, an interlevel dielectric layer is deposited to replace at least some of the etched insulating dielectric material. The interlevel dielectric layer has a second dielectric constant which is less than the first dielectric constant.

BRIEF DESCRIPTION OF THE DRAWINGS

Preferred embodiments of the invention are described below with reference to the following accompanying drawings.

FIG. 1 is a diagrammatic sectional view of a semiconductor wafer fragment in process in accordance with an aspect of the invention.

FIG. 2 is a view of the FIG. 1 wafer at a processing step subsequent to that depicted by FIG. 1 .

FIG. 3 is a view of the FIG. 1 wafer at a processing step subsequent to that depicted by FIG. 2 .

FIG. 4 is a view of an alternate embodiment semiconductor wafer fragment at a processing step subsequent to that depicted by FIG. 2 .

FIG. 5 is a view of the FIG. 1 wafer fragment at a processing step subsequent to that depicted by FIG. 3 .

FIG. 6 is a diagrammatic sectional view of another alternate embodiment wafer fragment at a processing step in accordance with an aspect of the invention.

FIG. 7 is a view of the FIG. 6 wafer at a processing step subsequent to that shown by FIG. 6 .

FIG. 8 is a view of the FIG. 6 wafer at a processing step subsequent to that depicted by FIG. 7 .

FIG. 9 is a view of the FIG. 6 wafer fragment at a processing step subsequent to that depicted by FIG. 8 .

FIG. 10 is a view of the FIG. 6 wafer at a processing step subsequent to that depicted by FIG. 9 .

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

This disclosure of the invention is submitted in furtherance of the constitutional purposes of the U.S. Patent Laws “to promote the progress of science and useful arts” (Article 1, Section 8).

A method of providing an interlevel dielectric layer intermediate different elevation conductive layers in the fabrication of integrated circuitry is initially described with reference to FIGS. 1-5 . Referring initially to FIG. 1 , a semiconductor wafer fragment in process is indicated generally with reference numeral 10 . Such comprises a bulk semiconductive substrate 12 , preferably lightly p-doped monocrystalline silicon, having field oxide regions 14 formed therein. In the context of this document, the term “semiconductor substrate” or “semiconductive substrate” is defined to mean any construction comprising semiconductive material, including, but not limited to, bulk semiconductive materials such as a semiconductive wafer (either alone or in assemblies comprising other materials thereon), and semiconductive material layers (either alone or in assemblies comprising other materials). The term “substrate” refers to any supporting structure, including, but not limited to, the semiconductive substrates described above.

A pair of gate line constructions 16 are fabricated over substrate 12 , and comprise a gate dielectric layer, a conductive polysilicon layer, a conductive silicide layer, and insulating sidewalls spacers and caps, which are not specifically designated. Source/drain diffusion regions 18 are fabricated within substrate 12 . Such constitute exemplary circuit devices which are at least partially fabricated over a substrate. Any alternate electric devices or components are also, of course, contemplated.

An insulating layer 20 is formed over devices 16 and substrate 12 . An example and preferred material is borophosphosilicate glass (BPSG). An exemplary thickness is from 5,000 Angstroms to 30,000 Angstroms. An insulating layer 22 is formed over insulating layer 20 . Such is preferably provided to function as an etch stop material, as will be described subsequently. Example materials include undoped silicon dioxide deposited by decomposition of tetraethylorthosilicate (TEOS) and silicon nitride. An exemplary thickness for layer 22 is from 0 Angstroms to 2,000 Angstroms. Layer 20 and 22 comprise but one example insulating dielectric mass which is formed over at least partially fabricated circuit devices over a substrate. An opening 33 has been formed in insulating dielectric mass 24 between word line 16 to substrate diffusion region 18 . Such has been filled with a conductive plugging material 34 , for example conductively doped polysilicon or a metal, and planarized back to have an outermost surface substantially coincident with the outer surface of layer 22 .

A first conductive interconnect layer 26 is formed over substrate 12 . Preferred materials are elemental metals or metal alloys. Conductive interconnect layer 26 has been formed into the shape of at least one conductive interconnect line 28 having an outer top 29 , an inner base 30 and sidewalls 31 . Accordingly, first conductive interconnect layer 26 and line 28 are supported by second insulating dielectric mass 24 .

An insulating dielectric mass 36 is provided about conductive metal interconnect layer 26 . Accordingly in this example, insulating dielectric mass 36 is formed over another conductive metal interconnect layer, here in the form of layer 28 . Further accordingly, insulating dielectric mass 36 is formed over top 29 and sidewalls 31 of line 28 . Example and preferred materials for layer 36 are the same as layer 20 , for example BPSG. Insulating dielectric mass 24 has some first dielectric constant, with the dielectric constant of BPSG being about 3.9. An exemplary deposition thickness for layer 36 is from 1,000 Angstroms to 15,000 Angstroms, with layer 36 being shown as having been planarized subsequent to deposition. An opening 38 has been formed through layer 36 and filled with conductive material 40 for making electric connection with conductive line 28 . An exemplary conductive line 42 has been patterned thereatop and over insulating dielectric mass 36 for, in this example, providing conductive line interconnection between conductive line 42 and line 28 . Accordingly, line 42 constitutes a second conductive interconnect layer and line which is supported at least partially by second insulating dielectric mass 36 . Layers 42 , 40 , 26 , and 34 are all preferably metallic. Most preferably at this point in the process, substantially all of the integrated circuitry to be fabricated relative to substrate 10 has been so fabricated. Further preferably, any subsequent processing relative to substrate 10 is preferably void of any photolithographic processing.

Referring to FIG. 3 , at least a portion of insulating dielectric mass 36 is etched away from substrate 10 . More preferably, the etching removes at least a majority (if not all) of insulating dielectric mass 36 from substrate 10 . FIG. 3 depicts exemplary anisotropic etching, with a dry etching being an example. A specific example where layer 36 comprises BPSG is 12 sccm C ₄ F ₈ , 200 sccm Ar, 1300 W source, 1400 W bias, at 10 mTorr in a LAM 9100™ oxide etch chamber. Regardless and further preferably, the etching preferably comprises etching second insulating dielectric mass 36 inwardly to proximate line base 30 . In the FIG. 3 depicted example, the etching has also been conducted substantially selectively relative to first conductive interconnect line 28 and second conductive interconnect line 42 , and substantially selectively relative to etch stop layer 22 and accordingly relative to insulative dielectric mass 24 . Further preferably, such etching has been conducted to expose first conductive interconnect line 28 and insulating dielectric mass 24 .

Such etching in this example leaves insulating dielectric material 36 beneath conductive line 42 as shown. Exemplary alternate processing to that depicted by FIG. 3 is shown in FIG. 4 . Here, essentially isotropic etching has been conducted and to a degree sufficient whereby no insulating dielectric material 36 has been left beneath conductive line 42 , and such that the etching comprises etching essentially all of insulating dielectric mass 36 from substrate 10 . Exemplary preferred processing to achieve the illustrated FIG. 4 construction includes wet etching, for example utilizing a chemistry of HF, NH ₄ F:HF or a nonaqueous blend of glycol, phosphoric acid, HF and a carboxylic acid. The above recited specific chemistries will provide etch selectivity relative to aluminum lines and plugs, BPSG, and silicon nitride for layer 22 . Removal of layer 36 results in lines 42 being supported by various conductive pillars 40 and/or remnant insulating layer 36 .

Referred to FIG. 5 , an interlevel dielectric layer 46 has been deposited to replace at least some of etched insulating dielectric material 36 . Interlevel dielectric layer 46 has a second dielectric constant which is less than the first dielectric constant of layer 36 . Example and preferred low k materials are those described above in the “Background” section, and include low k dielectric materials yet to be developed. In the preferred and FIG. 5 depicted example, the interlevel dielectric layer depositing preferably replaces all of insulating dielectric material 36 which was etched from the substrate as exemplified in the FIGS. 4 and 5 embodiments. Such layer is preferably planarized back as shown.

The above described exemplary processing depicts conductive metal interconnect layer and line 42 as being formed or otherwise provided after formation of insulating dielectric mass 36 , and by a subtractive etching of a deposited metal interconnect layer from which line 42 is formed. FIGS. 6-10 depict alternate exemplary processing whereby the line forming comprises a damascene etching of an insulating dielectric mass into a desired line shape. FIG. 6 depicts a wafer fragment in process indicated generally by reference numeral 50 . Such includes an insulating layer 52 having an opening 54 formed therein. A conductive plugging material 56 is received within opening 54 . An insulating dielectric layer 60 is formed over layer 52 , and a preferred insulating etch stop layer 62 is formed thereover. An opening 64 has been etched through layers 62 and 60 to expose plugging material 56 . Thereafter, insulating and etch stop layers 64 and 66 , respectively, have been formed over layer 62 . A desired line shape opening 68 has been patterned and formed through layers 66 and 64 , and overlies the illustrated singular opening 64 . Layers 60 , 62 , 64 and 66 constitute but one exemplary insulating dielectric mass 70 .

Referring to FIG. 7 , a conductive interconnect layer 72 is deposited to fill damascene line opening 68 and contact opening 64 .

Referring to FIG. 8 , layer 72 has been planarized back to provide a desired patterned and isolated conductive interconnect line 74 .

Referring to FIG. 9 , insulating dielectric mass 70 has been etched away from substrate 50 . Isotropic or anisotropic etching could be conducted as described above, whereby some or none of insulating dielectric mass 70 remains over the substrate.

Referring to FIG. 10 , an interlevel dielectric layer 76 has been deposited to replace at least some, and here all, of etched insulating dielectric material 70 . Layer 76 has a lower overall k value than does insulative mass 70 which was removed.

In compliance with the statute, the invention has been described in language more or less specific as to structural and methodical features. It is to be understood, however, that the invention is not limited to the specific features shown and described, since the means herein disclosed comprise preferred forms of putting the invention into effect. The invention is, therefore, claimed in any of its forms or modifications within the proper scope of the appended claims appropriately interpreted in accordance with the doctrine of equivalents.