Title:
ELECTROLUMINESCENT SILICON CARBIDE DIODE WITH SHARPLY PEAKED LIGHT EMISSION FROM THE EDGE OF THE JUNCTION
United States Patent 3530324
US Patent References:
Semiconductive light valve
- - 2692952
Photon modulation in semiconductors
- - 2776367
Laser materials
- - 3340108
Silicon carbride luminescent material
- - 3361678
Process of forming silicon carbide diode by growing separate p and n layers together
- - 3377210
Semiconductive light valve
- - 2692952
Photon modulation in semiconductors
- - 2776367
Laser materials
- - 3340108
Silicon carbride luminescent material
- - 3361678
Process of forming silicon carbide diode by growing separate p and n layers together
- - 3377210
Inventors:
Koller, Lewis R.
Miller, Allan S.
Miller, Allan S.
Publication Date:
09/22/1970
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Export Citation:
Assignee:
NORTON RESEARCH CORP
Primary Class:
Other Classes:
257/103, 257/77, 257/E33.035, 257/E33.006, 257/91, 369/122
International Classes:
G11B7/003; G11B7/125; H01L33/00; G11B7/00; G01D9/42; H05B33/16; G11B7/12
US Patent References:
| 3419742 | Injection-luminescent gaas diodes having a graded p-n junction |
Foreign References:
| GB263181A |