Title:
COMPLEMENTARY TRANSISTOR WRITE AND NDRO FOR MEMORY CELL
United States Patent 3521242
US Patent References:
DIGITAL STORAGE DEVICES USING FIELD EFFECT TRANSISTOR BISTABLE CIRCUITS
- - 3431433
COMPLEMENTARY FIELD-EFFECT TRANSISTOR TRANSMISSION GATE
- - 3457435
DIGITAL MEMORY APPARATUS
- - 3447137
Driver-sense circuit arrangement
- - 3275996
Integrated circuit bistable memory cell
- - 3389383
DIGITAL STORAGE DEVICES USING FIELD EFFECT TRANSISTOR BISTABLE CIRCUITS
- - 3431433
COMPLEMENTARY FIELD-EFFECT TRANSISTOR TRANSMISSION GATE
- - 3457435
DIGITAL MEMORY APPARATUS
- - 3447137
Driver-sense circuit arrangement
- - 3275996
Integrated circuit bistable memory cell
- - 3389383
Inventors:
Katz, Stanley
Publication Date:
07/21/1970
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Export Citation:
Assignee:
RCA CORP
Primary Class:
Other Classes:
327/214, 327/215, 327/208
International Classes:
G11C11/412; H03K3/356; H03K3/00; H01L11/14; H03K3/286; G11C11/40