Title:
SEMICONDUCTOR DEVICE WITH CONTACT METALLURGY THEREON,AND METHOD FOR MAKING SAME
United States Patent 3518506

Inventors:
Gates, Harlan R.
Publication Date:
06/30/1970
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Assignee:
IBM
Primary Class:
257/751
Other Classes:
438/372, 438/637, 257/762, 438/542, 257/766, 438/631, 257/E27.021, 257/767
International Classes:
H01L23/29; H01L23/485; H01L27/06; H01L29/00; H01L23/28; H01L23/48; H01L1/14
US Patent References:
3304595Method of making a conductive connection to a semiconductor device electrode
3309585Junction transistor structure with interdigitated configuration having features to minimize localized heating
3325706Power transistor




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