PROCESS OF DOPING SEMICONDUCTOR WITH ANALYZING MAGNET
United States Patent 3496029

Inventors:
King, William J.
Solomon, Stanley J.
Publication Date:
02/17/1970
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Assignee:
ION PHYSICS CORP
Primary Class:
Other Classes:
438/57, 427/531, 250/492.100, 438/530, 427/523, 257/461, 257/653, 250/492.200, 136/290
International Classes:
H01J29/84; H01J37/317; H01L21/00; H01L31/00; H01J29/00; H01L7/54; H01L15/02
US Patent References:
2860251Apparatus for manufacturing semi-conductor devices
2949498Solar energy converter
2993945Solar cell and method of making
3081370Solar cells
3131300Apparatus for reducing energy variations of a van de graaff ion beam
3135863Magnetic deflection system providing plural exit ports for a beam of charged particles
3206336Method of transforming n-type semiconductor material into p-type semiconductor material
3294583Process of coating a silicon semiconductor with indium using an ion beam
3322575Graded energy gap photoelectromagnetic cell
Foreign References:
GB779190A




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