Title:
MULTILEVEL TERMINAL METALLURGY FOR SEMICONDUCTOR DEVICES
United States Patent 3461357
US Patent References:
Semiconductor devices
- - 3241931
Glass enclosed, passivated semiconductor with contact means of alternate layers of chromium, silver and chromium
- - 3290565
Multilevel expanded metallic contacts for semiconductor devices
- - 3290570
Semiconductor devices
- - 3241931
Glass enclosed, passivated semiconductor with contact means of alternate layers of chromium, silver and chromium
- - 3290565
Multilevel expanded metallic contacts for semiconductor devices
- - 3290570
Inventors:
Mutter, Walter E.
Totta, Paul A.
Totta, Paul A.
Publication Date:
08/12/1969
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Export Citation:
Assignee:
IBM
Primary Class:
Other Classes:
438/628, 438/625, 257/766, 438/655, 438/654, 257/737, 438/656
International Classes:
H01L21/00; H01L23/485; H01L23/522; H01L23/48; H01L23/52; H01L3/12; H01L5/06