Manufacturing thin monocrystalline layers
United States Patent 3385737

Inventors:
Alain, Dreyfus Bertrand
Publication Date:
05/28/1968
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Assignee:
ELECTRONIQUE & AUTOMATISME SA
Primary Class:
Other Classes:
148/DIG.152, 117/109, 117/928, 117/102, 117/936, 117/101, 148/DIG.142, 117/103, 438/479, 117/935, 148/DIG.150, 23/295R
International Classes:
C30B25/18; H01L21/00
US Patent References:
3063871Production of semiconductor films
3128854
3139361Method of forming single crystal films on a material in fluid form
3160521Method for producing monocrystalline layers of semiconductor material
3160522Method for producting monocrystalline semiconductor layers