Title:
Device for manufacturing epitaxial crystals
United States Patent 3381114
Inventors:
Sho, Nakanuma
Publication Date:
04/30/1968
Export Citation:
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Assignee:
NIPPON ELECTRIC CO
Primary Class:
219/385
Other Classes:
118/725, 219/538, 219/552, 338/217, 338/293, 392/416, 392/418
International Classes:
C30B25/14; H05B3/62; C30B25/14; H05B3/62
View Patent Images:
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US Patent References:
3222217Method for producing highly pure rodshaped semiconductor crystals and apparatus
3208888Process of producing an electronic semiconductor device
3151006Use of a highly pure semiconductor carrier material in a vapor deposition process
3146123Method for producing pure silicon
2596327Electric heater
2282226Control means for industrial heattreating furnaces
1988845Electrical heating
1638857Electric furnace
0563032N/A
Foreign References:
GB361960A
GB425232A
CH256198A