Title:
Device for manufacturing epitaxial crystals
United States Patent 3381114
Publication Date:
04/30/1968
Assignee:
NIPPON ELECTRIC CO
Other Classes:
219/538, 118/725, 338/293, 392/416, 219/552, 392/418, 338/217
International Classes:
C30B25/14; H05B3/62
US Patent References:
| 3146123 | Method for producing pure silicon | | | |
| 3151006 | Use of a highly pure semiconductor carrier material in a vapor deposition process | | | |
| 3208888 | Process of producing an electronic semiconductor device | | | |
| 3222217 | Method for producing highly pure rodshaped semiconductor crystals and apparatus | | | |
Foreign References:
| GB361960A | | | | |
| GB425232A | | | | |
| CH256198A | | | | |