Title:
Device for manufacturing epitaxial crystals
Document Type and Number:
United States Patent 3381114

Inventors:
Sho, Nakanuma
Publication Date:
04/30/1968
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Assignee:
NIPPON ELECTRIC CO
Primary Class:
219/385
International Classes:
C30B25/14; H05B3/62
US Patent References:
0563032
1638857Electric furnace
1988845Electrical heating
2282226Control means for industrial heattreating furnaces
2596327Electric heater
3146123Method for producing pure silicon
3151006Use of a highly pure semiconductor carrier material in a vapor deposition process
3208888Process of producing an electronic semiconductor device
3222217Method for producing highly pure rodshaped semiconductor crystals and apparatus
Foreign References:
GB361960A
GB425232A
CH256198A




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