Solid state electron multiplier including reverse-biased, dissimilar semiconductor layers
United States Patent 3364367
US Patent References:
Transmission secondary emission dynode structure
- - 2898499
Semiconductive electron source
- - 2960659
Use of thin film field emitters in luminographs and image intensifiers
- - 2970219
Electron discharge devices employing secondary electron emission
- - 3036234
Hot electron cold lattice semiconductor cathode
- - 3098168
Transmission secondary emission dynode structure
- - 2898499
Semiconductive electron source
- - 2960659
Use of thin film field emitters in luminographs and image intensifiers
- - 2970219
Electron discharge devices employing secondary electron emission
- - 3036234
Hot electron cold lattice semiconductor cathode
- - 3098168
Inventors:
Brody, Thomas P.
Publication Date:
01/16/1968
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Assignee:
WESTINGHOUSE ELECTRIC CORP
Primary Class:
Other Classes:
327/585, 313/346R, 327/573, 313/103R
International Classes:
H01J1/32; H01J1/02
US Patent References: