Method of producing crystalline semiconductor material on a dendritic substrate

Method of producing crystalline semiconductor material on a dendritic substrate

United States Patent 3341376

US Patent References:
Deposition of metal films from carbonyls
- - 2759848

Process of making p-n junction crystals
- - 2763581

Method of making a composite stock
- - 2970068

Method and apparatus for treating continuous lengths of material with gaseous compositions
- - 2995470

Methods of producing substances of highest purity, particularly electric semiconductors
- - 3030189

Inventors:

Eberhard, Spenke
Heinrich, Welker

Publication Date:

09/12/1967

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Assignee:

SIEMENS AG

Primary Class:

117/88

Other Classes:

438/907, 117/98, 117/903, 148/DIG.006, 148/DIG.067, 148/DIG.072, 148/DIG.065, 148/DIG.051, 427/255.500, 438/493, 117/935, 117/22

International Classes:

C01B33/02; C23C16/00; C30B29/60; C30B33/00; H01L21/00; H01L21/205; C01B33/00; C30B29/00; H01L21/02

US Patent References:

3031403	Process for producing crystals and the products thereof
3152022	Epitaxial deposition on the surface of a freshly grown dendrite
3206406	Critical cooling rate in vapor deposition process to form bladelike semiconductor compound crystals

Foreign References:

CA649733A