Title:
Process of coating a silicon semiconductor with indium using an ion beam
Document Type and Number:
United States Patent 3294583
Inventors:
Leonid, Fedows-fedotowsky
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Publication Date:
12/27/1966
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Assignee:
SPRAGUE ELECTRIC CO
Primary Class:
Other Classes:
250/492.100, 438/961, 204/192.110, 427/527, 118/723FI, 250/284, 138/175, 376/133
International Classes:
C23C16/50; H01L21/00; H01L23/29; H01L23/28
US Patent References:
| 2465713 | Method of producing hardened optical coatings by electron bombardment | |||
| 2470745 | Mass spectrometer | |||
| 2541656 | Method and apparatus for analyzing substance by mass spectrometry | |||
| 2917442 | Method of making electroluminescent layers | |||
| 2945125 | Magnetic prisms used for separating ionized particles | |||
| 3021271 | Growth of solid layers on substrates which are kept under ion bombardment before and during deposition | |||
| 3101430 | Compensating lens | |||
| 3113207 | Particle separation apparatus utilizing congruent inhomogeneous magnetostatic and electrostatic fields | |||
| 3117022 | Deposition arrangement | |||
| 3133874 | Production of thin film metallic patterns |
Foreign References:
| DE1040693B | ||||
| GB766910A |