Title:
Cold emission cathode
United States Patent 3278789
US Patent References:
Semiconductive electron source
- - 2960659
Solid-state electron devices
- - 3056073
Electron tunnel emission device utilizing an insulator between two conductors eitheror both of which may be superconductive
- - 3116427
Electrode structure from magnetohydrodynamic device
- - 3149253
High efficiency cathode structure
- - 3150282
Semiconductive electron source
- - 2960659
Solid-state electron devices
- - 3056073
Electron tunnel emission device utilizing an insulator between two conductors eitheror both of which may be superconductive
- - 3116427
Electrode structure from magnetohydrodynamic device
- - 3149253
High efficiency cathode structure
- - 3150282
Inventors:
Shroff, Arvind M.
Publication Date:
10/11/1966
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Assignee:
Csf
Primary Class:
International Classes:
H01J1/312; H01J21/02; H01J1/30; H01J21/00
US Patent References:
| 3184636 | Cold cathode |