Process for growing neodymium doped single crystal divalent metal ion tungstates
United States Patent 3257327
US Patent References:
Method of preparation of single crystal ferroelectrics
- - 2954300
Process for growing and apparatus for utilizing paramagnetic crystals
- - 3003112
Method of growing silicon carbide crystals
- - 3053635
Method of preparation of single crystal ferroelectrics
- - 2954300
Process for growing and apparatus for utilizing paramagnetic crystals
- - 3003112
Method of growing silicon carbide crystals
- - 3053635
Inventors:
Kurt, Nassau
Publication Date:
06/21/1966
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Assignee:
BELL TELEPHONE LABOR INC
Primary Class:
Other Classes:
252/301.60R, 117/949, 423/606, 372/68, 117/918
International Classes:
C09K11/77; C30B15/00; H01S3/16