Title:
Method of making a photosensitive semi-conductor device
United States Patent 2963390
US Patent References:
Semiconductor comprising silicon and method of making it
- - 2567970
Semiconductor signal translating device
- - 2629800
Germanium photocell
- - 2644852
Electrical translation device, including semiconductor
- - 2691736
Semi-conducting device
- - 2707319
Semiconductor comprising silicon and method of making it
- - 2567970
Semiconductor signal translating device
- - 2629800
Germanium photocell
- - 2644852
Electrical translation device, including semiconductor
- - 2691736
Semi-conducting device
- - 2707319
Inventors:
Dickson Jr., Donald C.
Publication Date:
12/06/1960
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Export Citation:
Assignee:
HOFFMAN ELECTRONICS CORP
Primary Class:
Other Classes:
257/464, 257/431, 136/256, 136/261, 438/98
International Classes:
H01L31/00; H01L31/18
US Patent References:
| 2780569 | Method of making p-nu junction semiconductor units |
Foreign References:
| BE514927A |