Title:
Metal oxide nanostructures with hierarchical morphology
Document Type and Number:
Kind Code:
A1

Abstract:
The present invention relates generally to metal oxide materials with varied symmetrical nanostructure morphologies. In particular, the present invention provides metal oxide materials comprising one or more metallic oxides with three-dimensionally ordered nanostructural morphologies, including hierarchical morphologies. The present invention also provides methods for producing such metal oxide materials.
Representative Image:
Inventors:
Ren, Zhifen (Newton, MA, US)
Lao J. Y. (Chestnut Hill, MA, US)
Banerjee, Debasish (Chestnut Hill, MA, US)
Application Number:
10/660348
Publication Date:
06/03/2004
Filing Date:
09/11/2003
View Patent Images:
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Primary Class:
International Classes:
(IPC1-7): C01G015/00
Attorney, Agent or Firm:
PAULA CAMPBELL EVANS,PALMER & DODGE, LLP (111 HUNTINGTON AVENUE, BOSTON, MA, 02199, US)
Claims:

What is claimed is:



1. A metal oxide material comprising at least one metallic oxide wherein said metallic oxide is aligned in a three-dimensionally periodic orientation so as to confer a symmetric nanostructural morphology to said metal oxide material.

2. The metal oxide material of claim 1, wherein the symmetric nanostructural morphology has a pre-determined symmetry.

3. The metal oxide material of claim 1, wherein the metallic oxide is selected from the group consisting of ZnO, In2O3, and combinations thereof.

4. The metal oxide material of claim 1, wherein the symmetric nanostructural morphology is selected from the group consisting of a nanobridge, nanonail, nanoribbon, nanowire, nanowall nanobrush and combinations thereof.

5. The metal oxide material of claim 1, wherein the metallic oxide further comprises a dopant material.

6. The metal oxide material of claim 5, wherein the dopant materials is tin.

7. The metal oxide material of claim 1, comprising a first metallic oxide and a second metallic oxide, wherein said first metallic oxide forms a central nanostructural spine having a linear axis, whereupon said second metallic oxide forms terminally attached three-dimensional periodically oriented linear nanostructural rods, the linear axes of said nanostructural rods being oriented substantially non-parallel to the linear axis of said nanostructural spine of said first metallic oxide.

8. The metal oxide material of claim 1, comprising at least three metallic oxides

9. The metal oxide material of claim 8, wherein the metallic oxides are selected from the group consisting of ZnO, GeO2 and In2O3.

10. The metal oxide material of claim 1, with a pre-determined symmetry consisting essentially of 2-fold symmetry, 4-fold symmetry or 6-fold symmetry or combinations thereof.

11. The metal oxide material of claim 7, wherein the central nanostructural spine consists essentially of In2O3.

12. The metal oxide material of claim 7, wherein second metallic oxide consists essentially of ZnO, GeO2 or MgO.

13. The metal oxide material of claim 7, wherein the central nanostructural spine has a length ranging between 0.01 and 100 μm.

14. The metal oxide material of claim 7, wherein the central nanostructural spine has a length ranging between 1 and 20 μm.

15. The metal oxide material of claim 7, wherein the central nanostructural spine has a thickness ranging between 10 and 1000 nm.

16. The metal oxide material of claim 7, wherein the central nanostructural spine has a thickness ranging between 50 and 500 nm.

17. The metal oxide material of claim 7, wherein the nanostructural rods comprising the second metallic oxide have a length ranging between 0.01 and 100 μm.

18. The metallic oxide material of claim 7, wherein the nanostructural rods comprising the second metallic oxide have a length ranging between 2 and 5 μm.

19. The metal oxide material of claim 7, wherein the nanostructural rods comprising the second metallic oxide have a width ranging between 10 and 1000 nm.

20. The metal oxide material of claim 7, wherein the nanostructural rods comprising the second metallic oxide have a width ranging between 20 and 200 nm.

21. The metal oxide material of claim 7, wherein the nanostructural rods comprising the second metallic oxide are substantially orthogonal to the linear axis of said central nanostructural spine.

22. The metal oxide material of claim 7, wherein the nanostructural rods comprising the second metallic oxide are slanted to the central nanostructural spine so as to form a finite, non-orthogonal angle with the linear axis of said central nanostructural spine.

23. The metal oxide material of claim 7, wherein at least one of the metallic oxides further comprises a dopant material.

24. The metal oxide material of claim 23, wherein the dopant material is tin.

25. A process for the formation of a metal oxide material with symmetric nanostructural morphology comprising the steps of: a) crystallizing a first metallic oxide so as to form a thermally stable structure having three-dimensionally periodic orientations; and b) infiltrating the structure formed by the first metallic oxide with a second metallic oxide to form a composite material so as to confer a symmetric nanostructural morphology to said composite material.

26. The process of claim 25, wherein the metal oxide material with symmetric nanostructural morphology is formed by the steps comprising: a) forming a metallic oxide source mixture of a pre-determined ratio comprising at least two metallic oxides; b) placing said metallic oxide source mixture in a reactor cell comprising a closed end and an open end, said open end further comprising a collector; and c) subjecting said reactor cell comprising the metallic oxide source mixture contained therein to an elevated temperature under reduced pressure so as to enable formation of crystalline metal oxide material having three-dimensional periodic nanostructural morphology.

27. The process of claim 26 wherein the metallic oxide source mixture comprises a single metallic oxide.

28. The process of claim 26, wherein the reactor cell comprises a thermally stable material selected from the group consisting of metal, metal alloy and ceramic.

29. The process of claim 26, wherein the collector is a thermally stable material selected from the group consisting of a graphite, a metal, silicon, LaAlO3 and SrTiO3.

30. The process of claim 26, wherein the pressure range is between 0.1 and 100 Torr.

31. The process of claim 26, wherein the pressure range is between 0.5 and 2.5 Torr.

32. The process of claim 26, wherein the temperature range is between 500° C. and 3000° C.

33. The process of claim 26, wherein the temperature range is between 950° C. and 1000 ° C.

34. The process of claim 26, wherein the metallic oxide source mixture comprises ZnO, In2O3 or combinations thereof

35. The process of claim 24, wherein the metallic oxide source mixture is a combination of ZnO, In2O3 and graphite.

36. The process of claim 26, comprising two metallic oxides in a 1:1 ratio.

37. The process of claim 36, wherein the metallic oxides are ZnO and In2O3.

38. The process of claim 26, wherein the symmetric nanostructural morphology is selected from the group consisting of a nanobridge, nanonail, nanoribbon, nanowire, nanowall, nanobrush and combinations thereof.

39. The process of claim 26, wherein the metal oxide material comprises at least one crystalline metallic oxide, said metallic oxide being arranged in a three-dimensionally periodic orientation so as to confer a nanostructural morphology with pre-determined symmetry to said crystalline metal oxide material.

40. The process of claim 39, wherein metallic oxide material comprises a first metallic oxide and a second metallic oxide, wherein said first metallic oxide forms a central nanostructural spine having a linear axis, whereupon said second metallic oxide forms terminally attached three-dimensional periodically oriented linear nanostructural rods, the linear axes of said nanostructural rods being oriented substantially non-parallel to the linear axis of said nanostructural spine of said first metallic oxide.

41. The process of claim 26, with a pre-determined symmetry consisting essentially of 2-fold symmetry, 4-fold symmetry or 6-fold symmetry or combinations thereof.

42. The process of claim 40, wherein the central nanostructural spine consists essentially of In2O3.

43. The process of claim 40, wherein second metallic oxide consists essentially of ZnO.

44. The process of claim 40, wherein the nanostructural rods comprising the second metallic oxide are substantially orthogonal to the linear axis of the central nanostructural spine.

45. The process of claim 40, wherein the nanostructural rods comprising the second metallic oxide are slanted to the central nanostructural spine, so as to form a finite, non-orthogonal angle with the linear axis of said central nanostructural spine.

46. The process of claim 40, wherein at least one of the metallic oxides further comprises a dopant material.

47. The process of claim 46, wherein the dopant material is tin.

48. A process for the formation of a nanostructural device comprising the steps of: a) adherently depositing a catalyst material in a microparticulate form in a predetermined configuration on the surface of a substrate material so as to provide a plurality of catalytic sites on the surface of said substrate material. b) initiating growth of microparticulate crystals of a metallic oxide at the catalytic sites so as to form a plurality of three-dimensional periodic nanostructural crystalline nodes comprising said metallic oxide; and c) allowing continued crystal growth of the metallic oxide so as to render the nanostructural crystalline nodes of said metallic oxide to become connected by three-dimensional periodically aligned nanowire structures comprising the metallic oxide.

49. The process of claim 48, wherein the metallic oxide is In2O3.

50. The process of claim 48, wherein the catalyst material comprises gold or gold-zinc alloy.

51. The process of claim 48, wherein at least one of the metallic oxides further comprises a dopant material.

52. The process of claim 51, wherein the dopant material is tin.

53. A microelectronic device comprising a metal oxide material comprising at least one metallic oxide wherein said metallic oxide is aligned in a three-dimensionally periodic orientation so as to confer symmetric nanostructural morphology to said metal oxide material.

54. The microelectronic device of claim 53, selected from the group consisting of field emission device, photovoltaic device, optoelectronic device, blue optical device, ultra-violet optical device, transparent conductive film, transparent electronic imaging shielding device, transparent field effect transistor, supercapacitor, fuel cell, nanocomposite, data-storage device, biochemical sensor, chemical sensor, gas sensor, solar cell, photocatalysis device, bulk acoustic waves device, window heating device, and light emitting diode.

Description:

RELATED APPLICATION

[0001] This application claims the benefit of U.S. Provisional Application No. 60/410,322, filed on Sep. 12, 2002. The entire teachings of the above application is incorporated herein by reference.

GOVERNMENT SUPPORT

[0002] The present invention was made with partial support from The US Army Natick Soldier Systems Center (Grant Numbers DAAD 16-00-C-9227, DAAD 16-02-C-0037 and DAAD 16-03-C-0052), Department of Energy Grant Number DE-FG02-00ER45805) and The National Science Foundation (Grant Numbers ECS-0103012 and CMS-0219836). The United States Government retains certain rights to the invention.

FIELD OF THE INVENTION

[0003] The present invention relates generally to metal oxide materials with varied nanostructure morphologies, and in particular, to metal oxides with ordered nanostructural morphologies, including hierarchical morphologies.

BACKGROUND OF THE INVENTION

[0004] The optoelectronic properties of metal oxides, especially zinc oxide (ZnO) have been studied with respect to their semi-conduction, light emission and photo-catalytic properties. ZnO has been demonstrated to function as efficient light-emitting diodes and laser diodes in the UV-visible range, which ZnO p-n homojunctions have been obtained by the synthesis of p-type ZnO thin films. Metal oxides, in particular ZnO and indium oxide (In 2 O 3 ), in their pure form, have been obtained having nanostructural morphology. ZnO and In 2 O 3 have a binding energy which is relatively higher than that of typical semiconductor materials, and therefore have potential applicability in electronic devices. ZnO is also a promising material for optoelectronic applications because of its wide band gap (3.37 eV) and large exciton binding energy (60 meV), which is considerably greater than conventional semiconductor materials such as silicon (Si, 15 meV), germanium (Ge, 4.2 meV), Zinc sulfide (ZnS, 20 meV), gallium nitride (GaN, 21 meV), gallium arsenide (GaAs, 4.9 meV) and indium arsenide (InAs, 2.11 meV). In addition, In 2 O 3 is a promising material for optoelectronic applications because of its direct band gap around 3.6 eV.

[0005] Although metal oxides, including ZnO are predicted to be useful in a variety of applications such as in solar cells, sensors and photocatalysis, their practical realization has been largely limited by the need for economically viable synthetic processes that are capable of producing free-standing varied morphology materials in good yield that are required for their incorporation in the fabrication of such devices.

[0006] With the advent of carbon nanotubes (CNT) and their use, albeit in a limited way, in electronic device fabrication, attempts to utilize metal oxides, including ZnO and In 2 O 3 in a similar manner has been made. Such attempts include efforts to synthesize ZnO materials, with varied nanostructural morphology, by utilizing a number of methods such as metal organic chemical vapor deposition (MOCVD), chemical vapor deposition (CVD), physical vapor deposition (PVD), thermal evaporation. Such attempts also include efforts to synthesize In 2 O 3 materials with varied nanostructural morphology by electrodeposition, heating of indium grains without catalyst, reduction of In 2 O 3 by hydrogen, and heating of indium phosphide (InP) coated with a gold (Au) layer have been used. However these methods mostly require substrates upon which the metal oxide material is grown, and produce materials in relatively small yields. The prior art methods are therefore not optimal for producing free-standing materials in gram quantities.

SUMMARY OF THE INVENTION

[0007] The present invention relates to metal oxide materials with varied nanostructural morphologies, and methods for obtaining such metal oxide materials comprising either a single type of metal or a combination of two or more metals in their oxide form. In particular, the present invention relates to single or mixed metal oxide materials of metals from the Zinc Group (Zn, Cd) and Group-III (In, Ga, Al) elements, having controllable nanostructural morphologies that confer optoelectronic properties desirable for incorporation of such materials into nanocircuit devices.

[0008] The present invention also relates to the synthesis of metal oxide materials, in particular, metal oxide materials comprising one or more metallic oxides including, but not limited to, ZnO, In 2 O 3 and ZnO/In 2 O 3 with varied nanostructure morphologies, such as nanowire, nanocircuit, nanobelt, tetrapod, nanobridge, nanopin, nanonail, nanowall and hierarchical nanostructures. The present invention also relates to synthetic methods and processes for obtaining such metal oxide materials.

[0009] In one aspect, the present invention provides hierarchical ZnO nanostructures in the form of nanobrushes comprising a first metallic oxide and a second metallic oxide, wherein said first metallic oxide forms a central nanostructural spine comprising a linear axis in a three-dimensional orientation, whereupon said second metallic oxide forms terminally attached three-dimensional periodically oriented nanostructural rods, the linear axes of said nanostructural rods being oriented substantially non-parallel to the linear axis of said nanostructural spine formed by said first metallic oxide. In one embodiment, the nanobrushes have a central nanostructural spine comprising In 2 O 3 , terminally attached three-dimensional periodically oriented nanostructural rods comprising ZnO, and have a nanostructure morphology that has a basic 6-fold, 4-fold, and 2-fold structural symmetry.

[0010] In another aspect, the present invention provides ZnO nanobridge structures with various sizes and morphologies, comprising a nanobelt having one or more rows of nanorods extending from the nanobelt.

[0011] In yet another aspect, the present invention provides ZnO nanonail structures. In one embodiment, a metal oxide nanonail comprises a metal oxide nanorod shaft and nanorod cap, wherein the diameter of the nanonail shaft gradually reduces from the cap at the top of the shaft, to the bottom of the shaft, at the epitaxial attachment between the nanonail and the substrate.

[0012] In yet another aspect, the present invention provides ZnO nanostructures comprising nanowalls, and having a morphology close to that of previously known carbon nanowall structures wherein ZnO crystals are epitaxially grown on a substrate material are used as templates for forming additional nanowall structures using either coating methods, or by nanoshell formation over coatings using thermal evaporation or reduction techniques.

[0013] In yet another aspect, the present invention provides the synthesis of ZnO nanowires in the form of free-standing gram quantities by vaporization and condensation, and in the form of aligned arrays of ZnO nanowires by vaporization and condensation of ZnO on Au—Zn alloy microparticles on the substrate surface.

[0014] In yet another aspect, the present invention provides the synthesis and characterization of self-assembled circuits comprising In 2 O 3 nanocrystal chains and nanowires by a vapor transport and condensation process. The self-assembled circuits comprise nanostructural crystalline nodes of In 2 O 3 to become connected by three-dimensional periodically aligned nanowire structures comprising In 2 O 3 .

[0015] In yet another aspect, the invention provides Zn—In—O nanostructures having secondary ZnO nanorods grown on core nanowires/nanobelts synthesised by thermal vaporization and condensation. In particular, 2-fold, and 6-fold ZnO nanonail hierarchical nanostructures can also been synthesized by reducing the synthesis pressure of the thermal vaporization and condensation.

[0016] In yet another aspect, the invention provides substantially pure 2-fold hierarchical ZnO nanostructures where multiple rows of ZnO nanorods grow on the nanobelt surface. Substantially pure 2-fold hierarchical ZnO nanostructures wherein multiple rows of ZnO nanorods grow on a nanobelt surface when the amount of the In 2 O 3 in the metal oxide source mixture is reduced.

[0017] In yet another aspect, the invention provides hierarchical nanostructures synthesized using a ZnO, SnO 2 and graphite powder mixture as the metallic oxide source to provide ZnO nanostructures that are doped with tin (Sn). The majority of the materials are straight or twisted nanobelts wherein individual nanorods are alternatively either perpendicular to the linear axis of the nanobelt growth direction, or form non-perpendicular angles to the linear axis of the nanobelt.

[0018] In yet another aspect, the present invention also provides hierarchical nanostructures having a ternary composition wherein the symmetric metal oxide material is formed form three or more metallic oxides. For example, ZnO, GeO 2 , In 2 O 3 and graphite powder mixture are used as the metallic oxide source.

[0019] In yet another aspect, the present invention provides symmetric metal oxide materials having a morphology of a comb-like structure. Such comb-like structures can be synthesized using ZnO without another metallic oxide in the source. By utilizing high-temperature during thermal vaporization and condensation methods, comb-like ZnO nanostructure are obtained.

[0020] In yet another aspect, the present invention provides symmetric metal oxide materials formed from a MgO metallic oxide source. The symmetric metal oxide materials formed with MgO as the metallic oxide source have at least one row of nanorods that is substantially perpendicular to the linear axis of the core nanobelt.

[0021] The nanostructural metal oxide materials of the present invention offer advantages of chemical stability and structural rigidity, for example, in a nanowire form compared to carbon nanotubes (CNTs), wherein a stable field emission electron source can be obtained when they are configured as nanowire thin films.

BRIEF DESCRIPTION OF THE DRAWINGS

[0022] The present invention will be further explained with reference to the attached drawings, wherein like structures are referred to by like numerals throughout the several views. The drawings shown are not necessarily to scale, with emphasis instead generally being placed upon illustrating the principles of the present invention.

[0023] FIG. 1 shows scanning electron microscope (SEM) images of the ZnO nanostructures synthesized by vapour transport and condensation technique. FIG. 1 ( a ) shows a low magnification SEM image of the ZnO nanostructures illustrate abundance. Scale bar=10 μm. FIG. 1 ( b ) shows a medium magnification SEM image of ZnO nanostructures illustrating the various structural symmetries. Scale bar=3 μm. Three major basic symmetries of 6-fold, 4-fold and 2-fold, are respectively shown.

[0024] FIG. 2 shows SEM and transmission electron microscope (TEM) images, selected area diffraction patterns, and the schematic growth models of the 6-fold ZnO nanostructures. FIG. 2 ( a ) shows a SEM image illustrating the abundance of the 6S-fold symmetry (Scale bar=10 μm). FIG. 2 ( b ) shows a SEM image illustrating 6M-fold symmetry. FIG. 2 ( c ) shows a high magnification SEM image of a 6S-fold symmetry. FIG. 2 ( d ) shows a high magnification SEM image of a 6M-fold symmetry. FIG. 2 ( e ) shows a head-on look of a 6S-fold symmetry to illustrate the hexagonal nature of the major core nanowire. FIG. 2 ( f ) shows a side view of the structure in FIG. 2 ( e ) to illustrate the hexagonal nature of all the secondary ZnO nanorods and their same growth orientations with the major In 2 O 3 core nanowire. FIG. 2 ( g ) shows a 6M*-fold symmetry, where the nanorods are not perpendicular to the major core. FIG. 2 ( h ) shows a schematic diagram of orientation relationships between the major In 2 O 3 core nanowire and the secondary ZnO nanorods with the core along [110] direction FIG. 2 ( h ) left, and along [111] direction FIG. 2 ( h ) right. FIG. 2 ( i ) shows a cross-sectional bright-field TEM image of 6-fold symmetry to illustrate the six facets of the central core. FIG. 2 ( j ) shows a selected-area electron diffraction pattern of FIG. 2 ( i ) corresponding to the major In 2 O 3 core and the secondary ZnO nanorods. The scale bar for FIGS. 2 ( b ), ( c ) and ( g ) is 1 μm, (The scale bar for FIGS. 2 ( d - f ), and ( i ) is 200 nm).

[0025] FIG. 3 shows SEM and TEM images, selected area diffraction patterns, and the schematic growth models of 4-fold ZnO nanostructures. FIG. 3 ( a ) shows a medium magnification SEM image illustrating the abundance of the 4-fold nanostructures (Scale bar =5 μm), FIG. 3 ( b ) shows a high magnification SEM image illustrating the 4S-fold symmetry. FIG. 3 ( c ) shows a high magnification SEM image illustrating the 4M-fold symmetry. FIG. 3 ( d ) shows a high magnification SEM image of a 4S *1 -fold symmetry. FIG. 3 ( e ) shows a high magnification SEM image of a 4S *2 fold symmetry. FIG. 3 ( f ) shows a high magnification SEM image of the 4M*-fold symmetry. FIG. 3 ( g ) shows a schematic model of the 4S- and 4S*-fold symmetry. FIG. 3 ( h ) shows a cross-sectional bright-field TEM image of 4-fold symmetry to illustrate the four facets of the central core. FIG. 3 ( i ) shows a selected-area electron diffraction pattern of FIG. 3 ( h ) corresponding to the major In 2 O 3 core and the secondary ZnO nanorods. The diffraction consists of two sets of patterns; the small rectangle corresponds to [001] zone axis of In 2 O 3 . The large solid rectangle corresponds to [63{overscore (9)}2] zone axis of ZnO. The dashed rectangle is from another arm perpendicular to the solid rectangle. The scale bar for FIGS. 3 ( b - e ) is 1 μm. The scale bar for FIG. 3 ( f ) is 500 nm, (The scale bar for FIG. 3 ( h ) is 200 nm).

[0026] FIG. 4 shows SEM images of 2-fold ZnO nanostructures. FIG. 4 ( a ) shows a medium SEM image to illustrate the abundance of the 2S-fold symmetry. FIG. 4 ( b ) shows a high magnification of a 2S-fold symmetry. FIG. 4 ( c ) shows a low magnification SEM image to illustrate the abundance of a 2M-fold symmetry. FIG. 4 ( d ) shows a high magnification SEM image of 2M-fold symmetry. FIG. 4 ( e ) shows a low magnification SEM image to illustrate the abundance of the 2S*-fold symmetry. FIG. 4 ( f ) shows a high magnification SEM image of a 2S*-fold symmetry. The scale bar for FIGS. 4 ( a ), ( c ) and ( e ) is 1 μm (The scale bar for FIGS. 4 ( b ), ( d ) and ( f ) is 200 nm).

[0027] FIG. 5 shows a SEM image and a XRD 2-theta scan of nanobrushes. FIG. 5 ( a ) shows a low magnification SEM image of the ZnO hierarchical nanostructures. Scale bar=10 μm. FIG. 5 ( b ) shows a XRD 2-theta scan of the nanobrushes.

[0028] FIG. 6 shows various views of nanobrushes. FIG. 6 ( a ) shows a head on view of typical 4-fold ZnO hierarchical structure. FIG. 6 ( b ) shows a side view of the 4-fold structure with tilted secondary nanorods. FIG. 6 ( c ) and FIG. 6 (D) show a 4-fold structure with multi-row of nanorods on one direction. The scale bar for FIGS. 6 ( a )-( c ) is 1 μm (The scale bar for FIG. 6 (D) is 2 μm).

[0029] FIG. 7 shows several views of ZnO hierarchical nanostructures. FIG. 7 ( a ) shows one type of 6-fold ZnO hierarchical nanostructure. FIG. 7 ( b ) shows a medium magnification view of another type of 6-fold structure. FIG. 7 ( c ) shows a head on view and FIG. 7 ( d ) shows a side of the hierarchical nanostructure. The scale bar for FIG. 7 ( a ) and FIG. 7 ( b ) is 2 μm (The scale bar for FIG. 7 ( c ) and FIG. 7 ( d ) is 500 nm).

[0030] FIG. 8 shows images of various ZnO hierarchical structures. FIG. 8 ( a ) shows a typical 2-fold ZnO hierarchical structure. FIG. 8 ( b ) shows a 2-fold structure synthesized from an In-free source. FIG. 8 ( c ) shows a ZnO nanobelt with core. FIG. 8 ( d ) shows a ZnO nanobelt with ZnO secondary nanorods along the core. FIGS. 8 ( e ) and ( f ) show a ZnO nanobelt with secondary nanorods full of the surface (The scale bar for FIG. 8 ( a ) is 1 μm; the scale bar for FIG. 8 ( b ) is 10 μm; the scale bar for FIG. 8 ( c ) is 10 nm; the scale bar for FIG. 8 ( d ) is 1 μm; the scale bar for FIG. 8 ( e ) is 2 μm; the scale bar for FIG. 8 ( f ) is 500 nm).

[0031] FIG. 9 shows images of nanobridge and nanonails. FIG. 9 ( a ) shows a typical ZnO nanobridge structure. FIG. 9 ( b ), FIG. 9 ( c ) and FIG. 9 ( d ) show a variety of nanobridge structures. FIG. 9 ( e ) and FIG. 9 ( f ) show ZnO nanonails on a ZnO layer and a nanorod, respectively (The scale bar for FIG. 9 ( a ), FIG. 9 ( c ), and FIG. 9 ( f ) is 1 μm; the scale bar for FIG. 9 ( b ), FIG. 9 ( d ) and FIG. 9 ( e ), is 5 μm).

[0032] FIG. 10 shows SEM images and a Schematic diagram of the ZnO nanobridges synthesized by vapor transport and condensation method. FIG. 10 ( a ) shows a low magnification image illustrating the abundance of the nanobridges. Scale bar=4 μm. FIG. 10 ( b ) shows a medium magnification image side view of a nanobridge. Scale bar=500 nm. FIG. 10 ( c ) shows a TEM image of the side view of a nanobridge. The inset is the electron diffraction pattern of a nanorod, with zone axis of [{overscore (2)}110] direction. Scale bar=200 nm. FIG. 10 ( d ) shows a schematic drawing of a top and side view of part of a nanobridge. The page planes for the top view and side view are (0001) and (11{overscore (2)}0), respectively (Scale bar=1 μm).

[0033] FIG. 11 shows SEM images of the ZnO nanobridge variations. FIG. 11 ( a ) shows a roller coaster-like nanobridge and FIG. 11 ( b ) shows joined twin-like nanobridges. FIGS. 11 ( c ) and ( d ) show a combination of nanobridge and 4-fold symmetry (Scale bars=1 μm).

[0034] FIG. 12 shows SEM images of the ZnO nanonails. FIG. 12 ( a ) shows a low magnification SEM image of the ZnO nanonails synthesized by vapor transport and condensation method showing the aligned growth of nanonails and the nanonail flowers. Inset is the x-ray diffraction pattern (Scale bar=10 μm). FIG. 12 ( b ) shows a medium magnification top view of nanonail flower (Scale bar=5 μm). FIG. 12 ( c ) shows a side view illustrating the vertical growth of nanonails. Scale bar=1 μm. FIG. 12 ( d ) shows a high magnification SEM side-view image of a nanonail. Scale bar=200 nm. FIG. 12 ( e ) shows a TEM image of the nanonail. The inset is the electron diffraction pattern, with zone axis of [{overscore (2)}110] (Scale bar=200 nm) FIG. 12 ( f ) shows an HRTEM image taken from the cap of the nanonail along [{overscore (2)}110] direction (Scale bar=2 nm).

[0035] FIG. 13 shows SEM images of several different ZnO nanonail structures. FIG. 13 ( a ) shows low magnification images and FIG. 13 ( b ) shows medium magnification images of small nanonails. FIG. 13 ( c ) shows medium magnification images and FIG. 13 ( d ) shows high magnification images of thin shaft nanonails. FIG. 13 ( e ) shows Non-hexagon shape nanonails on ZnO rod bases. FIG. 13 ( f ) shows nanonails on a ZnO sheet (The scale bar for FIGS. 13 ( a ), ( c ) and ( e ) is 1 μm; the scale bars for FIGS. 13 ( b ), ( d ) and ( f ) is 200 nm).

[0036] FIG. 14 shows images of nanorods, nanowires and nanobelts. FIG. 14 ( a ) and FIG. 14 ( b ) show ZnO nanocrystals decorated nanorods and nanowires. FIG. 14 ( c ) showa a nanobelt penetrated by a ZnO nanorod. The scale bar for FIG. 14 ( a ) is 1 μm (The scale bar for FIGS. 14 ( b ) and 14 ( c ) is 500 nm).

[0037] FIG. 15 shows images of nanowalls. FIG. 15 ( a ) shows a typical ZnO nanowall structure on α-plane sapphire single crystal substrate. FIG. 15 ( b ) shows a ZnO nanowall with some flakes not enclosed. FIG. 15 ( c ) shows a ZnO nanowall where some nanowires grown on the nanowall (The scale bar for FIG. 15 ( a ) is 5 μm; the scale bar for FIGS. 15 ( b ) and FIG. 15 ( c ) is 1 μm).

[0038] FIG. 16 shows SEM images of the ZnO nanowalls synthesized by vapor transport and condensation method. FIG. 16 ( a ) shows a medium magnification SEM image of the small size nanowalls. FIG. 16 ( b ) shows a medium magnification SEM image of the large size nanowalls. FIG. 16 ( c ) shows a high magnification SEM image of the large size nanowalls.

[0039] FIG. 17 shows XRD spectra of nanowalls structures. FIG. 17 ( a ) shows a θ-2θ scan. FIGS. 17 ( b ) and ( c ) show Ω scans of the nanowalls and substrate, respectively. FIG. 17 ( d ) shows a Φ scan of the nanowalls.

[0040] FIG. 18 shows TEM micrographs of the nanowalls structure. FIG. 18 ( a ) shows a low magnification TEM image of a nanowall flake. FIG. 18 ( b ) shows an SAD pattern. FIG. 18 ( c ) shows a high magnification phase contrast image illustrating the edge dislocation dipoles. FIG. 18 ( d ) shows a high resolution TEM image of the dislocation dipole.

[0041] FIG. 19 shows a photoluminescence spectra of the nanowalls. Plot (a) is a spectrum of white-grey nanowalls grown at high temperature and Plot (b) is a spectrum of reddish nanowalls grown at low temperature.

[0042] FIG. 20 shows aligned ZnO nanowires FIG. 20 ( a ) shows a low magnification view of the aligned ZnO nanowires on a-plane sapphire single crystal substrate. FIG. 20 ( b ) shows a medium magnification view and FIG. 20 ( c ) shows a tilted view (Scale bar for FIG. 20 ( a ) is 1 μm; Scale bars for FIGS. 20 ( b ) and 20 ( c ) is 500 nm).

[0043] FIG. 21 shows SEM images and measured current densities of 2.09 nanowires. FIGS. 21 ( a )-( d ) show SEM images of ZnO nanowires on Si substrate with continuous Au film and 3 nm Au nanoparticles at a density of 5.6×10 6 , 1.2×10 6 , and 0.4×10 6 /cm 2 , respectively. FIG. 21 ( e ) shows a Table of Au nanoparticle density. FIG. 21 ( f ) shows the measured current densities as a function of the macroscopic electric field for 8 samples (Scale bars=5 μm).

[0044] FIG. 22 shows SEM images of small ZnO nanowires. FIG. 22 ( a ) shows a low magnification view of the small ZnO nanowires. FIG. 22 ( b ) shows a high magnification view of small ZnO nanowires. FIG. 22 ( c ) shows aggregated Au nanoparticles (Scale bar for FIG. 22 ( a ) is 1 μm; the Scale bar for FIGS. 22 ( b ) and 22 ( c ) is 100 nm).

[0045] FIG. 23 shows SEM images illustrating morphologies of the large quantity ZnO nanostructures grown on fine graphite flakes. FIGS. 23 ( a ), ( b ), and ( c ) show nanowires of length about 5-10 μm and diameter about 20-50 nm in different magnifications, respectively, FIGS. 22 ( d ), ( e ), and ( f ) show nanorods of length about 0.5-5 μm and diameter about 60-100 nm in different magnifications, respectively.

[0046] FIG. 24 shows SEM images illustrating morphology of ZnO nanostructures after oxidization. FIGS. 24 ( a ) and ( b ) show the voids left by flakes (indicated by the arrows). FIG. 23 ( c ) shows the sharpened tips of the nanorods after oxidation.

[0047] FIG. 25 shows XRD patterns of the as-made large quantity ZnO nanowires and those after oxidation at 600° C., 650° C. and 700° C. (top to bottom). The patterns are typical for wurtzite hexagonal structure like bulk ZnO with unit cell constants of a=3.248 Å and c=5.206 Å.

[0048] FIG. 26 shows TEM images of the ZnO nanowires. FIG. 26 ( a ) shows a general morphology of the oxidized sample. The inset shows a tip of the nanowire, FIG. 26 ( b ) shows an HRTEM image of a tip showing growth direction of [0001], and the surface is enclosed mainly by {1100} facets, FIG. 26 ( c ) shows a selected area diffraction pattern of ZnO nanowires, illustrating hexagonal structure, FIG. 26 ( d ) shows the presence of an amorphous graphite shell on the surface of an as-made nanowire, FIG. 26 ( e ) shows the disappearance of the amorphous graphite layer after oxidation.

[0049] FIG. 27 shows a room temperature photoluminescence spectra of as-made, oxidized, oxidized plus vacuum annealed ZnO nanowires.

[0050] FIG. 28 shows images of Sn-doped ZnO nanobelts. FIG. 28 ( a ) shows a large amount of the Sn-doped ZnO nanobelts. FIG. 28 ( b ) shows a TEM image illustrating the defects. The scale bar for FIG. 28 ( a ) is 1 μm. (The scale bar for FIG. 28 ( b ) is 300 nm).

[0051] FIG. 29 shows SEM and TEM microscopic images of the In 2 O 3 nanowires. FIG. 29 ( a ) shows a medium magnification SEM image of the nanowires. FIG. 29 ( b ) shows a TEM image of the nanowire, and FIG. 29 ( c ) HRTEM image showing the nanowire with an Au catalyst on the tip.

[0052] FIG. 30 shows SEM and TEM microscopic images of the In 2 O 3 nanowire and nanocrystal chain circuits. Big crystals are part of the circuit. FIG. 30 ( a ) shows a SEM image illustrating the nanocrystal chain circuits. FIG. 30 ( b ) shows a SEM image illustrating the circuit junctions. FIG. 30 ( c ) shows a SEM image illustrating the nanowire and nanocrystal circuits. FIG. 30 ( d ) shows a TEM bright field image of part of a nanocrystal chain. FIG. 30 ( e ) shows a SAD pattern corresponding to the nanocrystal on the left of point X and FIG. 30 ( f ) shows a SAD pattern corresponding to the nanocrystal on the right of point X. FIG. 30 ( g ) shows a HRTEM showing the domain boundary at point X.

[0053] FIG. 31 shows SEM images of the In 2 O 3 nanowire circuits grown at a pressure of 0.3 Torr. FIG. 31 ( a ) shows a low magnification SEM image illustrating the circuit. FIG. 31 ( b ) shows a medium SEM image illustrating the junctions. FIG. 31 ( c ) shows a hexagonally shaped circuit. FIG. 31 ( d ) shows a SEM image illustrating the parallel nanowires from a big nanofiber. Nanowires with zigzag growth direction are observed. FIG. 31 ( e ) shows a high magnification SEM image illustrating the zigzag growth direction of a nanowire confined between the two parallel nanowires.

[0054] FIG. 32 shows SEM images of wavy In 2 O 3 nanowires grown without Au catalyst. FIG. 32 ( a ) shows a low magnification SEM image. The nanowires are started from the edge of the holes. FIG. 32 ( b ) shows a wavy nanowire crossed between two holes. FIG. 32 ( c ) shows a wavy nanowire which changed direction three times in a hole. FIG. 32 ( d ) shows a wavy nanowire ring formed along the edge of a hole.

[0055] FIG. 33 shows SEM images showing the variety of In 2 O 3 nanocrystal networks. The nanocrystal chains have preferred starting and termination directions on the big crystal.

[0056] FIG. 34 shows SEM images of In 2 O 3 nanocrystal networks. FIG. 34 ( a ) shows the solid connection between the nanocrystal chain and the big crystal and FIG. 34 ( b ) shows the solid connection between the nanowire and big crystal.

[0057] FIG. 35 shows a diagram illustrating an apparatus for thermal vaporization and condensation.

[0058] FIG. 36 shows electron microscopy images of metal oxide materials. FIG. 36 ( a ) shows a SEM low magnification image and FIG. 36 ( b ) and FIG. 36 ( c ) show high magnification images of a 2-fold nanostructure. FIG. 36 ( d ) shows a 6-fold nanostructure. FIG. 36 ( e ) and FIG. 36 ( f ) show la ow magnification and high magnification TEM image of the 2-fold nanostructure. A core contrast is shown in FIG. 36 ( f ).

[0059] FIG. 37 shows an electron microscopy images of a 2-fold Zn—In—O nanostructure with multiple rows of secondary nanorods. FIG. 37 ( a ) shows a SEM image illustrating the large amount of 2-fold Zn—In—O nanostructures. FIG. 37 ( b ) shows a high magnification of 2-fold Zn—In—O nanostructures. FIG. 37 ( c ) shows a TEM image of 2-fold Zn—In—O nanostructures. FIG. 37 ( d ) shows an associated diffraction pattern. The zone axis is [0001].

[0060] FIG. 38 shows SEM images of the hierarchical Zn—Sn—O nanostructures. FIG. 38 ( a ) shows a low magnification and FIG. 38 ( b ) shows a high magnification image of nanobelts. FIG. 38 ( c ) shows an eight fold structure. FIG. 38 ( d ) shows a four fold structure. FIG. 38 ( e ) shows a 2-fold structure and FIG. 38 ( f ) shows a leaf-like structure.

[0061] FIG. 39 shows microscopy images of a Zn—Ge—In—O hierarchical nanostructure. FIG. 39 ( a ) shows a low magnification SEM image. FIG. 39 ( b ) shows a high magnification SEM image.

[0062] FIG. 40 shows microscopy images of ZnO comb-like nanostructures. FIG. 40 ( a ) shows a low magnification SEM image. FIG. 40 ( b ) shows a high magnification SEM image.

[0063] FIG. 41 shows SEM images of metal oxide materials. FIG. 41 ( a ) shows a 2-fold MgO nanostructure. FIG. 41 ( b ) shows a In 2 O 3 nanocrystal chain and nanowire networks.

[0064] While the above-identified drawings set forth preferred embodiments of the present invention, other embodiments of the present invention are also contemplated, as noted in the discussion. This disclosure presents illustrative embodiments of the present invention by way of representation and not limitation. Numerous other modifications and embodiments can be devised by those skilled in the art which fall within the scope and spirit of the principles of the present invention.

DETAILED DESCRIPTION OF THE INVENTION

[0065] Definitions:

[0066] Definition of the symmetry symbols: In the description of symmetry symbols such as, for example, 4S *1 , are described herein. The numeral, 4, refers to a 4-fold crystal symmetry of the metallic oxide forming a central nanostructural spine. The letter, S (or M), refers to single (S) or multiple (M) rows of the secondary metallic oxide nanorods such as for example ZnO. The absence of any symbol or numerals after the letter S (or M), is indicative of all secondary nanorods being perpendicular to the linear axis of the central nanostructural spine. The symbol * after the letter S (or M), is indicative of secondary nanorods forming a finite non-perpendicular angle with the central nanostructural spine. The numeral 1 or 2 after the symbol * indicates that not all secondary nanorod branches form a finite non-perpendicular angle with the central nanostructural spine.

[0067] The term “hierarchical metal oxide” material refers to microscale ordered structure of metallic oxides having a three-dimensional periodic orientation. Metal oxide materials having a nanostructural morphology including but not limited to nanobrushes, nanobridges, nanonails, naowalls, nanobelts nanowires, nanocrystal chains and nanocircuits are alternativley refered to as “hierarchical metal oxide” materials

[0068] The terms “nanobrush” and “nanocomb” refer to metal oxide materials comprising a “nanostructural spine”, and “secondary nanostructural rods”, that are attached to the nanostructural spine, such that the secondary nanostructural rods are extended linearly from the core crystal and are substantially non-parallel to to the nanowire backbone axis. The term, nanostructural spine, is alternatively referred to as a “core crystal” or “nanowire”. The term, secondary nanostructural rods, is alternatively referred to as “secondary crystals”, “secondary nanorods” or “secondary nanonails”.

[0069] The term “nanonail” refers to a metal oxide microscopic structure on a nanoscale level, bearing a resemblance to a nail. In one embodiment, a nanonail comprises a metal oxide nanorod shaft and nanorod head, alternativle referred to as a nanorod cap. Typically, the nanonail shaft diameter decreases gradually from the cap at one end of the shaft, to the opposite end, where it is attached to the substrate.

[0070] The term “nanobelt” refers to a metal oxide microscopic structure on a nanoscale level, bearing a resemblance to a belt, strip or ribbon. Alternatively, a nanobelt is referred to as a “nanoribbon”. For example, an Sn-doped nanobelt of the invention comprises an array of multiple parallel nanorodsadhered to one another.

[0071] The term “nanobridge” refers to a metal oxide microscopic structure on a nanoscale level, bearing a resemblance to a bridge. Typically a nanobridge comprises a nanobelt having one or more rows of nanorods extending from the nanobelt. Typically the nanorods are perpendicular to the plane of the nanobelt. The rows of nanorods are optionally on one or both faces of the nanobelt. The rows of nanorods are optionally on one or both edges of the nanobelt. For example, a metal oxide nanobridge of the present invention has two rows of c-axis nanorods epitaxially grown perpendicularly on the edges of the {0001} plane of a ZnO nanobelt.

[0072] The term “roller coaster like nanobridge” refers to a nanobridge in that the nanobelt forms one or more loops or a ring around the center of the nanobridge.

[0073] The term “heteroepitaxial” as referred to herein, is afforded the meaning typically provided for in the art. Typically, the term heteroepitaxial, refers to an epitaxial relationship between two or more metallic oxides in which the composition of each metallic oxide is different from the metallic oxide adjacent to itself. An example of a heteroepitaxial metal oxide composite is that of a hierarchical metal oxide composite in which the core crystal is major In 2 O 3 or pure In 2 O 3 , and the secondary crystal is major ZnO or pure ZnO.

[0074] The term “homoepitaxial” as referred to herein, is afforded the meaning typically provided for in the art. Typically, the term homoepitaxial, refers to an epitaxial relationship between two or more metallic oxides in which the composition of each metallic oxide is the same or similar to the composition of the metallic oxide adjacent to itself. An example of a homoepitaxial metal oxide composite is that of a hierarchical metal oxide composite in which the core crystal is major ZnO or pure ZnO, and the secondary crystal is major ZnO or pure ZnO.

[0075] The term “nanocrystal chain” as referred to herein, is afforded the meaning typically provided for in the art. In particular, a nanocrystal chain refers to a metal oxide microscale structure comprising a plurality of metal oxide microcrystals linked together to form a linear or one-dimensional (1D) array. In one embodiment, a nanocrystal chain comprises interconnected individual nanocrystals epitaxial with each other. In a currently preferred embodiment, the nanocrystal chain form with a growth direction of [001].

[0076] The term “nanowire circuit” as referred to herein, is afforded the meaning typically provided for in the art. The term nanowire circuit, typically refers to a metal oxide microscale structure comprising a network of metal oxide network junctions and connected by metal oxide nanowires or metal oxide nanocrystal chains. Metal oxide network junctions are typically nanocrystals or bigger microcrystals, alternatively referred to as “big crystals”. Alternative embodiments of either nanowire and nanocrystal chains are formed by varying the growth temperature gradient of the thermal evaporation and condensation. The term “nanowire circuit” is alternatively referred to as a “nanowire network circuit” or a “nanowire network”.

[0077] A “metal oxide source material” as used herein, is a mixture of one or more metallic oxides that one used as metal oxide vapor source in the thermal evaporation and condensation methods of invention. The metal oxide source material alternatively includes non-metal oxide source material, including but not limited to, graphite. The metal oxide source material can have any suitable morphology. In one embodiment, the metal oxide source material comprises a metal oxide source powder.

[0078] The present invention including metal oxide materials, specific embodiments thereof, specific attributes thereof and advantages of thereof, as well as methods for their preparation, are described below with reference to the relevant figures.

[0079] The present invention provides a metal oxide material comprising at least one metallic oxide wherein said metallic oxide is arranged in a three-dimensionally periodic orientation so as to confer nanostructural morphology to said metal oxide material. Preferably, the metal oxide material has a pre-determined symmetry.

[0080] In one embodiment, the present invention provides a metal oxide material comprising a first metallic oxide and a second metallic oxide, wherein said first metallic oxide forms a central nanostructural spine comprising a linear axis in a three-dimensional orientation, whereupon said second metallic oxide forms terminally attached three-dimensional periodically oriented nanostructural rods, the linear axes of said nanostructural rods being orientedsubstantially non-parallel to the linear axis of said nanostructural spine formed by said first metallic oxide.

[0081] In another embodiment, the central nanostructural spine is a nanowire. The term “nanowire” as referred to herein, is afforded the meaning typically provided for in the art. In one embodiment, the nanowire is a single crystal metal oxide. In another embodiment, the nanowire single crystal metal oxide in an indium oxide. In a currently preferred embodiment, the indium oxide is In 2 O 3 . In yet another embodiment, the nanowire single crystal metal oxide comprises zinc oxide. In another currently preferred embodiment, the zinc oxide is ZnO. A nanowire alternatively comprises a “nanocrystal chain.” Nanowires of the present invention can be grown to different lengths. In one embodiment, the nanowires have an average diameter of ranging from about 10 nanometers (nm) to about 1000 nm (1 μm). In another embodiment, the nanowires have a diameter ranging from about 50 to about 500 nm. In one embodiment, the nanowires have an average length of about 0.01 micrometers (μm) to about 100 μm. In another embodiment, the nanowires have a length ranging from about 1 μm to about 20 μm.

[0082] The central nanostructural spine in the metal oxide materials of the invention can have a varity of morphologies including but not limited to, cylindrical, rod, barrel-shaped, conical, rectangular cross-sectional, square cross-sectional and hexagonal cross-sectional morphologies. The central nanostructural spine of the invention can have a plurality of facets. The term “facet” as referred to herein, is afforded the meaning typically provided for in the art. Typically a facet refers to a planar external surface of the crystal structure of the nanowires. In one embodiment, the central nanostructural spine of the invention can have 2, 4 or 6 facets. The central nanostructural spine of has a structural symmetry. Typically the central nanostructural spine of the invention can have 2-fold, 4-fold or 6-fold symmetry, wherein the geometries are rectangular cross- sectional, square cross-sectional or hexagonal cross-sectional respectively.

[0083] The periodically oriented nanostructural rods in the metal oxide materials of the invention can also have a plurality of facets. In one embodiment, the number of facets comprised by the secondary crystals corresponds to the number of facets of the core crystal. In onather embodiment the periodically oriented nanostructural rods are nanonails.

[0084] The term “nanorod” refers to a nanoscale crystalline metal oxide. In a currently preferred embodiment, the nanorod is a single crystal metal oxide. Typically the nanorod comprises a zinc oxide. In a currently preferred embodiment, the zinc oxide is ZnO.

[0085] In one embodiment of the invention, the nanorods have an average diameter ranging from about 10 to about 1000 nm (1 μm). In another embodiment of the invention, the nanorods have a diameter of about 20 to about 200 nanometers (nm). The nanorods of the invention typically have an average length of about 0.01 to about 100 μm. Preferably, the nanorods have a length ranging from about 0.2 μm to about 5 μm.

[0086] The periodically oriented nanostructural rods of the invention have proximal and distal ends such that the nanostructural rods of the invention are attached to the core crystal at the distal ends as to extend laterally form the central nanostructural spine.

[0087] The periodically oriented nanostructural rods of the invention are aligned to the nanostructural spine either in single rows or in multiple rows on the nanostructural spine. The nanostructural rods also are aligned in a direction either perpendicular to the linear axis of the nanostructural spine or at a finite non-perpendicular angle to (slanted). In one embodiment, the nanostructural rods grow at an angle ranging from about 45° to about 160° to the nanostructural spine. In a currently preferred embodiment, the secondary crystals grow perpendicular to the core crystal. In another currently preferred embodiment, the secondary crystals grow at an angle rangeing from about 60° or about 120° to the core crystal.

[0088] FIG. 1 shows the typical scanning electron microscopy (SEM) images of the ZnO nanostructures of the invention at low and medium magnifications, respectively. The low magnification image in FIG. 1 ( a ) shows the large quantity of such nanostructures. The medium magnification in FIG. 1 ( b ) shows that there are 3 major structural symmetries, 6-fold, 4-fold, and 2-fold and additionally shows a plurality of sub-symmetries associated with each major symmetry. For 6-fold symmetry, 3 sub-symmetries are identified as 6S-fold, 6M-fold, and 6M*-fold. For 4-fold symmetry, 5 sub-symmetries as 4S *1 -fold, 4S *2 -fold, 4S *2 fold, 4M-fold, and 4M*-fold are identified. For 2-fold symmetry, 3 sub-symmetries as 2S-fold, 2S*-fold, and 2M-fold are identified. The length of the In 2 O 3 core nanowires along the axis can be as long as tens of micrometers as shown in FIG. 1 ( a ). The diameter of the In 2 O 3 core nanowire ranges from about 50 to about 500 nm. The length of the secondary ZnO nanorods grown on the major In 2 O 3 core nanowire ranges from about 0.2 to a few micrometers, with diameters ranging from about 20 to about 200 nm. Powder X-ray diffraction (XRD) measurements show that the samples are mixtures of hexagonal ZnO (wurtzite) and cubic In 2 O 3 . From the XRD spectra, lattice constants for ZnO are derived as a=3.249 Å and c=5.206 Å, consistent with the standard values for bulk ZnO. The lattice constant for the cubic In 2 O 3 is a=10.118 Å which is in good agreement with the reported bulk value. For standard bulk values, see, for example, Powder Diffraction File Release 2000, PDF Maintenance 6.0 (International Center for Diffraction Data, Pennsylvania).

[0089] During SEM examination, observed are areas with particular symmetry as the majority. In FIG. 2 , SEM and transmission electron microscopy (TEM) images are presented in medium and high magnifications to show the 6-fold nanostructures in details. FIG. 2 ( a ) is a medium magnification of the area with the basic 6S-fold nanostructure symmetry as the majority and FIG. 2 ( b ) is a medium magnification of the area with the basic 6M-fold nanostructure symmetry as the majority. When the major core nanowire is small, the secondary nanorods grow in a single row as shown in FIG. 2 ( a ) and FIG. 2 ( c ). When the major core nanowire is large enough, multiple rows of secondary nanorods form on the major nanowire as shown in FIG. 2 ( b ) and FIG. 2 ( d ). The secondary nanorods grow into 6-fold symmetry because of the hexagonal symmetry of the major core as shown in FIG. 2 ( e ) and FIG. 2 ( f ). It is shown that not only the major core is hexagonal, but also the secondary nanorods are hexagonal and aligned in the same direction with each other as shown in FIG. 2 ( f ). FIG. 2 ( g ) is the SEM image of 6M* -fold nanostructure symmetry, in which the nanorods are not perpendicular to the major core. The TEM contrast image shown in FIG. 2 ( i ) indicates the hexagonal nature of the In 2 O 3 nanocore (lighter contrast in the center). Energy dispersive X-ray spectroscopy (EDS) composition analysis shows that all the secondary nanorods are pure ZnO and the major core nanowire is In 2 O 3 . Structural studies by electron diffraction indicate that the major core nanowire is cubic In 2 O 3 with lattice parameter of a=10.1 Å. Selected-area electron diffraction patterns shown in FIG. 20 ), point out that the major cores are along [110] or [001] zone axes of In 2 O 3 . Secondary nanorods grow along the [0001] direction of ZnO.

[0090] As shown in FIG. 3, 4-fold nanostructures are observed as the majority. FIG. 3 ( a ) is the medium magnification SEM image showing the abundance of 4-fold nanostructures. Under close examination of high magnification, at least 5 variations are found for the 4-fold symmetry. FIG. 3 ( b ) is a high magnification SEM image of the basic 4S-fold to show the single row of the secondary ZnO nanorods perpendicular to the major In 2 O 3 core nanowire. When the major In 2 O 3 core nanowire is large enough, multiple rows of ZnO nanorods are observed perpendicular to the major In 2 O 3 core nanowire. This sub-symmetry, having 4-fold symmetry with multiple rows of ZnO nanorods, is identified as 4M-fold as shown in FIG. 3 ( c .) In addition, the secondary ZnO nanorods are observed to be not always perpendicular to the major In 2 O 3 core nanowire, but grow at finite non-perpendicular angles with respect to the linear axis of the In 2 O 3 core nanowire. Again, when the major In 2 O 3 core nanowire is small, the secondary ZnO nanorods grow in a single row as shown in FIG. 3 ( d ) and FIG. 3 ( e ). In FIG. 3 ( e ), the same angle exists on all 4 directions, whereas in FIG. 3 ( d ), the same angle only exists in the 2 opposite directions (parallel to the page), and the other 2 opposite directions are perpendicular to the linear axis of major In 2 O 3 core nanowire (in-to and out-of the page). These two nanostructures are defined as 4S *1 -fold and 4S *2 -fold, respectively. When the major In 2 O 3 core nanowire is large enough, multiple rows of ZnO nanorods grow with an angle in all 4 directions as shown in FIG. 3 ( f ). This nanostructure is defined as 4M*-fold symmetry. FIG. 3 ( g ) is the growth model. FIG. 3 ( h ) and FIG. 3 ( i ) are the TEM bright field image and selected area diffraction patterns, respectively.

[0091] In addition to the 6-fold and 4-fold symmetrical nanostructures, the basic 2-fold nanostructures are observed as shown in FIG. 4 . FIG. 4 ( a ) is a medium magnification SEM image to show the abundance of the basic 2S-fold symmetry. FIG. 4 ( b ) is a high magnification SEM that shows that the secondary ZnO nanorods are perpendicular to the linear axis of the major core nanowire. 2S-fold symmetry variations have been observed and identified so far as 2S*-fold and 2M-fold. FIG. 4 ( c ) and FIG. 4 ( d ) show the SEM images in low and high magnifications of the 2M-fold symmetry, respectively. FIG. 4 ( e ) and FIG. 4 ( f ) are the low and high magnification SEM images showing the abundance and close up look of the 2S*-fold, respectively.

[0092] Additional variations of the 6-, 4-, and 2-fold symmetries are contemplated. Orientation relationships between the major In 2 O 3 core nanowire and the secondary ZnO nanorods are obtained from selected-area diffraction patterns shown in FIG. 2 ( j ) for the 6-fold symmetry and FIG. 3 ( i ) for the 4-fold symmetry. In each diffraction pattern, two sets of diffraction spots are observed; one from the major In 2 O 3 core nanowire and the other from the secondary ZnO nanorods. The diffraction pattern in FIG. 2 ( j ) is indexed using the [110] zone axis of In 2 O 3 and the [11{overscore (2)}0] zone axis of ZnO. Therefore, the crystallographic relationship is [110] In2O3 //[11{overscore (2)}0] ZnO for the 6-fold symmetry. In FIG. 3 ( i ), the diffraction pattern is indexed using the [001] zone axis of In 2 O 3 and the [63{overscore (9)}2] zone axis of ZnO. Therefore, the [001] zone axis of In 2 O 3 nanowire is parallel to the [63{overscore (9)}2] zone axis of the ZnO nanorods.

[0093] When In 2 O 3 nanowire is along the [001] direction, the core nanowire is enclosed by ±(100) and ±(010) facets ( FIG. 3 ( i )). ZnO nanorods grow on each facet of the In 2 O 3 nanowire according to the orientation relationships as listed in Table 1. There are two major orientation relationships, corresponding to the observed 4-fold and 4*-fold symmetries, respectively. The orientation relationship in the 4-fold symmetry is: [001] In2O3 //[10{overscore (1)}0] ZnO , [100] In2O3 //[{overscore (1)}2{overscore (1)}0] ZnO . In this case, [001] In2O3 ⊥[0001] ZnO , therefore, ZnO nanorods in the four arms grow perpendicular to the core nanowire as shown in FIG. 3 ( b ) since ZnO nanorods grow along [0001] direction. In the case of 4*-fold symmetry, [001] In2O3 //[63{overscore (9)}2] ZnO , so that the angle between ZnO nanorod and core nanowire is equal to the angle between [63{overscore (9)}2] ZnO , and [0001] ZnO , which is about 60°, explaining why a tilted 4*-fold symmetry is often observed in SEM images. Since there is no difference between ±[63{overscore (9)}2] ZnO , for the growth of a nanorod on a [001] core In 2 O 3 nanowire, nanorods can grow with an angle of either 60 or 120 degree, which result in all the variations of the tilted growth as shown in FIG. 3 ( d ) and FIG. 3 ( e ).

[0094] When In 2 O 3 is along [110] directions, the core nanowire is enclosed by ±(1{overscore (1)}2), ±(1{overscore (1)}{overscore (2)}), and ±(1{overscore (1)}0) facets. The angle between each of these adjacent facets is about 60°. Therefore, a quasi 6-fold symmetry is observed when an In 2 O 3 nanowire grows along the [110] direction. In addition to the [001] and [110] directions, In 2 O 3 nanowires also grow along the [111] direction, as shown in FIG. 2 ( e ) and FIG. 2 ( f ). Hexagon end planes at the ends of the core nanowire ( FIG. 2 ( e )) are identified in the SEM images, showing that the core nanowire grows along the [111] zone axis of In 2 O 3 . When this type of nanostructure lies in the observation plane, hexagon end planes are observed at the end of nanorods ( FIG. 2 ( f )). The observation indicates that the nanorods grow along the [0001] zone axis of ZnO. The orientation relationship determined by the facets appeared in FIG. 2 ( e ) and FIG. 2 ( f ) is also listed in Table 1. 1

TABLE 1
Observed orientation relationships between the major
In 2 O 3 core nanowire and the secondary ZnO nanorods.
Core axis Orientation relationship
[110] In203 (Figure 2(h)) [110] In203 // [11{overscore (2)}0] ZnO
[222] In203 // [0001] ZnO
[111] In203 (Figure 2(h)) [111] In203 // [10{overscore (1)}0] ZnO
[112] In203 // [1{overscore (2)}10] ZnO
[110] In203 // [0001] ZnO
[001] In203 (Figure 3(g)) [001] In203 ⊥ [10{overscore (1)}0] ZnO
[100] In203 // [{overscore (1)}2{overscore (1)}0] ZnO
[001] In203 ⊥ [0001] ZnO
[001] In203 (Figure 3(g)) [001] In203 // [63{overscore (9)}2] ZnO
[110] In203 // [{overscore (1)}2{overscore (1)}0] ZnO
[110] In203 // [{overscore (1)}013] ZnO

[0095] Several orientation relationships between ZnO nanorods and In 2 O 3 nanowire are found. The orientation relationships, as schematically shown in FIG. 2 ( h ) and FIG. 3 ( g ) as listed in Table 1 are understood using the theory of the near coincidence-site lattice. For example, the In 2 O 3 a plane is 4-fold symmetry with a=10.18 Å and the ZnO c plane is 6-fold symmetry with a=3.24 Å, which results in a lattice mismatch to about 3.7% (a factor of 3 for In 2 O 3 a axis to ZnO a axis), a reasonable value for epitaxial growth.

[0096] The heteroepitaxial nature of ZnO nanorods from In 2 O 3 cores gives several possible crystal orientation relations between the cores and nanorods, thus resulting in several different ZnO nanorods orientations with respect to the core. Therefore, the symmetry of these hierarchical nanostructures is dependent on the crystallographic orientation of the In 2 O 3 core nanowires. The orientation of the In 2 O 3 nanowire along the [110] or [111] direction creates 6-fold symmetries, whereas the orientation of the In 2 O 3 nanowire along the [001] direction produced 4-fold symmetries. No catalyst is used in this system. Therefore, the In 2 O 3 nanowire growth is based on the vapor-solid mechanism. Compared to the aligned ZnO grown by vapor-liquid-solid mechanism with source temperature of about 900° C., the metal and/or metal oxide vapor pressure here is much higher. This high vapor pressure is optimal for the growth of the hierarchical structures. The growth conditions such as temperature, pressure and source component ratios are correlated to affect the supersaturation rate and the structure formed.

[0097] In yet another embodiment, the invention provides Zn—In—O nanostructures having secondary ZnO nanorods grown on core nanowires/nanobelts. Zn—In—O nanostructures having secondary ZnO nanorods grown on core nanowires/nanobelts, are synthesises by thermal vaporization and condensation. In particular, 2-fold, and 6-fold ZnO nanonail hierarchical nanostructures can also been synthesized by reducing the synthesis pressure of the thermal vaporization and condensation. FIG. 36 ( a ) shows the large amount of 2-fold, and 6-fold ZnO nanonail hierarchical nanostructures on graphite foil. The structures are in length of tens of microns and width in about 1-2 microns. FIG. 36 ( b ) is the SEM image of a 2-fold structure in which the nanonails grow on both sides of the core nanobelt. The nanonails have a tip diameter of about 200 nm and length of about 0.5 micron to one micron. FIG. 36 ( c ) shows another embodiment of the 2-fold structure in which the nanonails grow on one side of the core nanobelt. Factors such as surface nucleation and vapor access to the surface effect formation of such structures. From the geometry of the structures, it is shown that the 2-fold structure grows along the [11{overscore (2)}0] direction and the nanonails grow epitaxially from the (0001) surface of the major core nanobelt along the [0001] direction. FIG. 36 ( d )shows the 6-fold nanostructure with nanonails as the secondary branches. FIG. 36 ( e ) shows the low magnification TEM image of the 2-fold structure in which the branched nanonails are dense. FIG. 36 ( f ) shows the high magnification TEM image of the core nanobelt with a contrast in the center caused by the indium rich composition.

[0098] In yet another embodiment, the invention provides substantially pure 2-fold hierarchical ZnO nanostructures wherein multiple rows of ZnO nanorods grow on the nanobelt surface. Substantially pure 2-fold hierarchical ZnO nanostructures where multiple rows of ZnO nanorods grow on the nanobelt surface when the amount of the In 2 O 3 in the metal oxide source mixture is reduced. FIG. 37 ( a ) shows a SEM image of large amount of such structures. The structure is tens of micron long and microns in width. FIG. 37 ( b ) shows the high magnification SEM image of such structures, wherein the ZnO nanorods have a diameter from about 50 nm to about 1000 nm and have a length from about 100 nanometers to several micrometers. FIG. 37 ( c ) shows the TEM bright field image of such structures The dark contrast dots represent the secondary nanorods. The associated SAD pattern [0001] direction illustrates nanobelts grown along the [0{overscore (1)}10] direction. The associated SAD pattern that the secondary nanorods are epitaxial with the core nanobelts.

[0099] In yet another embodiment, the invention provides hierarchical nanostructures synthesized using a ZnO, SnO 2 and graphite powder mixture as the metallic oxide source. Such structures are Sn-doped ZnO structures. FIG. 38 ( a ) shows the SEM image of the structures typically obtained. The majority of the materials are nanobelts. Such nanobelts comprise nanorods welded together, and are alternatively straight or twisted. The individual nanorods are alternatively either perpendicular to the linear axis of the nanobelt growth direction as shown in FIG. 38 ( b ) or form non-perpendicular angles to the linear axis of the nanobelt. FIG. 38 ( c ) shows a nanobelt with three rows of nanorods growing on one side of the nanobelt surface. The middle row of the secondary nanorods is perpendicular to the nanobelt surface and the other two rows form an angle of about 45 degrees to the linear axis of the nanobelt. FIG. 38 ( d ) shows a nanobelt with only one row of ZnO nanorods perpendicular to the to the linear axis of the nanobelt surface, Such a structure is a four fold structure. The nanorods in FIG. 38 ( c ) and FIG. 38 ( d ) are grown from the core line of the nanobelt which is also the junction of the individual nanorods. FIG. 38 ( e ) shows the 2-fold structure wherein only one side of the core nanorod has secondary nanorods. FIG. 38 ( e ) shows tree leaf-like structure.

[0100] The present invention also provides hierarchical nanostructures having a ternary composition wherein the symmetric metal oxide material is formed form three metallic oxides. In one embodiment, ZnO, GeO 2 , In 2 O 3 and graphite powder mixture are used as the metallic oxide source. FIG. 39 ( a ) shows a large amount of random hierarchical nanostructures obtained from the ZnO, GeO 2 , In 2 O 3 and graphite powder mixture. The secondary nanorods grow on the major core nanorod without any order. FIG. 39 ( b ) is the higher magnification image of the structure. Typically the structures have a length of tens of microns. Typically, the core nanorods have a diameter of about 100 nm. The secondary nanorods are in smaller diameter and the length varies from about 100 nm to about 100 μm.

[0101] FIG. 40 ( a ) shows the large amount of such structures and FIG. 40 ( b ) shows a high magnification image of such structures. The comb-like nanostructure grows along the [11{overscore (2)}0] direction, which is different from the [01{overscore (1)}0] direction which is common in the hierarchical structure formed from binary sources.

[0102] In yet another embodiment, the present invention provides symmetric metal oxide materials formed from a MgO metallic oxide source. FIG. 41 ( a ) shows an image of MgO 2-fold hierarchical nanostructures, wherein a row of nanorods is substantially perpendicular to the core nanobelt.

[0103] The Zn—Sn—O and Zn—Sn—Ge—O nanostructures are also formed in two steps. The Zn—Sn—O core nanobelt forms first as shown in FIG. 38 ( a - d ) (core nanowire for FIG. 38 ( e - f )), then the secondary nanorods grow on the nanobelt epitaxailly. The same two-step growth also applies to the MgO 2-fold structure.

[0104] In yet another embodiment, the invention provides metal oxide materials having a nanobridge or nanonail nanostructural morphology. FIG. 10 ( a ) shows the SEM image of the ZnO nanobridges rich area. Random 3D ZnO nanostructures are observed in the same area. The typical nanobridges can be tens of microns long, and up to microns in width and height. Two rows of nanorods grow at the edge of the belt along the belt growth direction and the nanorods are typically substantially perpendicular to the belt surface. The nanorods can grow on either one side of the belt, or both sides of the belt. Nanorods have diameters ranging from about 50 to about 200 nm and lengths ranging from several hundred nanometers to about 2 μm. The density of nanorods on the belt varies. FIG. 10 ( b ) is the side view of part of a nanobridge. The nanobelt is several hundred nanometers thick and the nanorods are uniform in length and diameter. FIG. 10 (